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Y. Koseki

Publications and source records attributed to Y. Koseki.

3 recordsLinked to original sources

Giant Plasmon Instability in Dual-Grating-Gate Graphene Field-Effect Transistor

We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only the acoustic-phonon-limited electron scattering, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed $4\times10^{12}$ s$^{-1}$ at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. By Comparing the simulation results with existing theory, it is revealed that the giant total growth rate originates from simulataneous occurence of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.

cond-mat.mes-hall

Damping of Terahertz Plasmons in Graphene Coupled with Surface Plasmons in Heavily-Doped Substrate

Coupling of plasmons in graphene at terahert (THz) frequencies with surface plasmons in a heavily-doped substrate is studied theoretically. We reveal that a huge scattering rate may completely damp out the plasmons, so that proper choices of material and geometrical parameters are essential to suppress the coupling effect and to obtain the minimum damping rate in graphene. Even with the doping concentration 10^{19} - 10^{20} cm^{-3} and the thickness of the dielectric layer between graphene and the substrate 100 nm, which are typical values in real graphene samples with a heavily-doped substrate, the increase in the damping rate is not negligible in comparison with the acoustic-phonon-limited damping rate. Dependence of the damping rate on wavenumber, thicknesses of graphene-to-substrate and gate-to-graphene separation, substrate doping concentration, and dielectric constants of surrounding materials are investigated. It is shown that the damping rate can be much reduced by the gate screening, which suppresses the field spread of the graphene plasmons into the substrate.

cond-mat.mes-hall

Laboratory Studies on the Removal of Radon-Born Lead from KamLAND's Organic Liquid Scintillator

The removal of radioactivity from liquid scintillator has been studied in preparation of a low background phase of KamLAND. This paper describes the methods and techniques developed to measure and efficiently extract radon decay products from liquid scintillator. We report the radio-isotope reduction factors obtained when applying various extraction methods. During this study, distillation was identified as the most efficient method for removing radon daughters from liquid scintillator.

physics.ins-det