arXiv subjects

Y. Kumar

Publications and source records attributed to Y. Kumar.

8 recordsLinked to original sources

arXiv2026

Particle tracking at high luminosities using a novel reconstruction approach

Tracking charged particles with high precision is of vital importance for collider experiment like those operating at the Large Hadron Collider (LHC), CERN. The tracking detector in the CMS experiment is composed of multi-layer silicon based tracker with 3-dimensional position sensitivity. High precision position data from tracker operated in high magnetic field, is used to reconstruct the trajectories of charged particles and obtain their kinematic parameters ($p_t$,$\eta_0$, $\phi_0$) with high accuracy. In this paper, for Phase2 CMS tracker design, we present a novel track reconstruction algorithm for high luminosity (HL) era of the LHC. The algorithm identifies hits associated with each track and utilizes them to accurately determine the kinematic parameters of each track using machine learning (ML) architecture. The proposed algorithm has been applied on a large sample of hard interactions simulated at high luminosity (HL) era of the LHC using Pythia8 and Geant4 framework for equivalent geometry of the outer tracker of the CMS experiment. Performance of the proposed algorithm has been studied using the key indicators such as reconstruction efficiency, fake rate and resolution. Comparison with traditional methods demonstrates robust performance with excellent efficiency and resolution with minimal fake rate.

hep-ex↗

arXiv2026

Tuning topological phase and Dirac point position via Pb and Sb substitution in Mn$_{1-x}$Pb$_{x}$(Bi$_{1-y}$Sb$_{y}$)$_{2}$Te$_{4}$

This study presents a systematic investigation of Mn$_{1-x}$Pb$_{x}$(Bi$_{1-y}$Sb$_{y}$)$_{2}$Te$_{4}$ crystals over a wide range of concentrations (x = 10-60%, y = 5-60%). It was found that the value of the bulk band gap is determined exclusively by the Pb concentration and it closes at Pb 40-50 %, which corresponds to a topological phase transition. The position of the Dirac point is determined by the Pb/Sb ratio, rather than the absolute Sb content. The magnetic properties depend on the dilution of the Mn sublattice by Pb and are weakly sensitive to Sb. We show that the simultaneous substitution of Mn and Bi allows independent control of the topological phase and the position of the Fermi level.

cond-mat.mtrl-sci↗

arXiv2024

Probing the Interaction Between Topological and Rashba-like Surface States in MnBi$_2$Te$_4$ Through Sn Doping

The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory (DFT) calculations and high-resolution ARPES. Our findings reveal that increasing Sn concentration shifts RSS downward in energy, enhancing their influence on the electronic structure near the Fermi level. ARPES validates these predictions, capturing the evolution of RSS and their hybridization with TSS. Orbital analysis shows RSS are localized within the first three Te-Bi-Te trilayers, dominated by Bi $p$-orbitals, with evidence of the orbital Rashba effect enhancing spin-momentum locking. At higher Sn concentrations, RSS penetrate deeper into the crystal, driven by Sn $p$-orbital contributions. These results position Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ as a tunable platform for tailoring electronic properties in spintronic and quantum technologies.

cond-mat.mtrl-sci↗

arXiv2024

The electronic structure of Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$: experimental evidence of topological phase transition

This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and circular dichroism (CD) measurements, we analyzed the evolution of the electronic structure across different Pb concentrations, with a focus on topological phase transitions (TPT) near x = 50 %. Key indicators of TPT include the presence or absence of topological surface states (TSS) and bulk band gap closure. The results show a gradual decrease of the bulk band gap in the electronic structure of MPBT up to x = 40 %, where it nearly vanishes, followed by a constant gap value between 40 - 60 %, and its reopening above 80 %, which is accompanied by a transition of the electronic structure of MPBT to a PbBi$_2$Te$_4$-like electronic structure. TSS were observed at x less than 30 % and greater than 80 %, as confirmed by CD and spin-resolved ARPES data, but were absent near x = 55 %, suggesting a distinct topological phase - possibly semi-metallic or a trivial insulator with a narrow gap phase. These findings demonstrate the tunability of the electronic structure of MPBT, making it a promising candidate for topological and spintronic applications.

cond-mat.mtrl-sci↗

arXiv2017

Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures

After more than a decade of extensive research on the magnetic order triggered by lattice defects in a wide range of nominally non-magnetic materials, we report its application in a spintronic device. This device is based on a spin-filter phenomenon we discovered at the interfaces between defect-induced magnetic and non-magnetic regions, produced at the surface of a Li doped ZnO microwire by low-energy proton implantation. Positive magnetoresistance is observed at 300~K and scales with the number of interfaces introduced along the wire.

cond-mat.mes-hall↗

arXiv2016

Photo-enhanced magnetization in Fe-doped ZnO nanowires

An emerging branch of electronics, the optospintronics, would be highly boosted if the control of magnetic order by light is implemented in magnetic semiconductors nanostructures being compatible with the actual technology. Here we show that the ferromagnetic magnetization of low Fe-doped ZnO nanowires prepared by carbothermal process is enhanced under illumination up to temperatures slightly below room temperature. This enhancement is related to the existence of an oxygen vacancy V$_{\rm O}$ in the neighbouring of an antiferromagnetic superexchange Fe$^{3+}$-Fe$^{3+}$ pair. Under illumination the V$_{\rm O}$ is ionized to V$_{\rm O}^+$ giving an electron to a close Fe$^{3+}$ ion from the antiferromagnetic pair. This light excited electron transition allows the transition of Fe$^{3+}$ to Fe$^{2+}$ forming stable ferromagnetic double exchange pairs, increasing the total magnetization. The results here presented indicate an efficient way to influence the magnetic properties of ZnO based nanostructures by light illumination at high temperatures.

cond-mat.mtrl-sci↗

arXiv2016

Conductivity fluctuations in proton-implanted ZnO microwires

The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been characterized yet. In this study we have investigated the conductivity fluctuations in 10~nm thick current paths produced by proton implantation of ZnO microwires at room temperature. The voltage noise under a constant dc current bias in undoped as well as in Li-doped microwires is characterized by $1/f^a$ power spectra with $a \sim 1$. The noise intensity scales with the square of the bias current pointing out to bias-independent resistivity fluctuations as a source of the observed noise. The normalized power spectral density appears inversely proportional to the number of carriers in the probed sample volume, in agreement with the phenomenological Hooge law. For the proton-implanted ZnO microwire and at 1~Hz we obtain a normalized power spectral density as low as $\sim 10^{-11}~$Hz$^{-1}$.

cond-mat.mes-hall↗

arXiv2009

Dielectric Anomalies in a New Manganocuprate, Gd3Ba2Mn2Cu2O12

Dielectric response has been studied for a new manganocuprate, Gd3Ba2Mn2Cu2O12 (Gd3222) as a function of temperature (100 - 300 K) and frequency (75 kHz to 1 MHz). The dielectric constant (e) exhibits a two step increase (two peaks) in e(T) with increasing temperature from 100 to 300 K. The first peak is seen around 150 K and the second one around 210 K (both for 75 kHz). Increasing frequency shifts both the peaks to higher temperature side. The behavior of dielectric constant (e) and dielectric loss (tan_delta) matches with glassy behavior observed in many dipolar molecules.

cond-mat.mtrl-sci↗