arXiv subjects

Y. M. Galperin

Publications and source records attributed to Y. M. Galperin.

At least 55 records · Page 3Linked to original sources

arXiv2012

Coulomb Glasses: A Comparison Between Mean Field and Monte Carlo Results

Recently a local mean field theory for both eqilibrium and transport properties of the Coulomb glass was proposed [A. Amir et al., Phys. Rev. B 77, 165207 (2008); 80, 245214 (2009)]. We compare the predictions of this theory to the results of dynamic Monte Carlo simulations. In a thermal equilibrium state we compare the density of states and the occupation probabilities. We also study the transition rates between different states and find that the mean field rates underestimate a certain class of important transitions. We propose modified rates to be used in the mean field approach which take into account correlations at the minimal level in the sense that transitions are only to take place from an occupied to an empty site. We show that this modification accounts for most of the difference between the mean field and Monte Carlo rates. The linear response conductance is shown to exhibit the Efros-Shklovskii behaviour in both the mean field and Monte Carlo approaches, but the mean field method strongly underestimates the current at low temperatures. When using the modified rates better agreement is achieved.

cond-mat.dis-nn↗

arXiv2012

Logarithmic relaxation and stress aging in the electron glass

Slow relaxation and aging of the conductance are experimental features of a range of materials, which are collectively known as electron glasses. We report dynamic Monte Carlo simulations of the standard electron glass lattice model. In a non-equilibrium state, the electrons will often form a Fermi distribution with an effective electron temperature higher than the phonon bath temperature. We study the effective temperature as a function of time in three different situations: relaxation after a quench from an initial random state, during driving by an external electric field and during relaxation after such driving. We observe logarithmic relaxation of the effective temperature after a quench from a random initial state as well as after driving the system for some time $t_w$ with a strong electric field. For not too strong electric field and not too long $t_w$ we observe that data for the effective temperature at different waiting times collapse when plotted as functions of $t/t_w$ -- the so-called simple aging. During the driving period we study how the effective temperature is established, separating the contributions from the sites involved in jumps from those that were not involved. It is found that the heating mainly affects the sites involved in jumps, but at strong driving, also the remaining sites are heated.

cond-mat.dis-nn↗

arXiv2011

Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films

Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been investigated in the temperature range 1.5-300 K. The observed temperature dependences of resistivity were typical for metallic transport of electrons except temperature dependence of resistivity of the In$_2$O$_3$:Sn film deposited in the oxygen deficient atmosphere. The electron concentration and mobility for the film deposited at 230$^\circ$C was larger than that for the film deposited nominally at room temperature. Short (5 minutes) treatment of the films in hydrogen plasma leads to the enhancement of electrical conductivity while longer (30 minute) treatment has the opposite effect. The electrical measurements were accompanied by AFM and SEM studies of structural properties, as well as by XPS analysis. Basic on structural and electrical measurements we conclude the reduction process initiated by the hydrogen plasma provides essential modification of the ITO films surface. At the same time, electrical properties of the remaining (located beneath the surface layer) parts of the ITO films remain mostly unchangeable. XPS analysis shows that grown in situ oxygen deficient ITO films have enhanced DOS between the Fermi level and the valence band edge. The extra localized states behave as acceptors leading to a compensation of $n$-type ITO. That can explain lower $n$-type conductivity in this material crossing over to a Mott-type hopping.

cond-mat.mtrl-sci↗

arXiv2010

Coulomb-enhanced resonance transmission of quantum SINIS junctions

Coherent charge transfer through a ballistic gated SINIS junction is mediated by the resonant tunneling via the Andreev states. Extra charge accommodated on the Andreev levels partially compensates the charge induced by the gate voltage preserving the electron wavelength and maintaining the resonance conditions in a broad range of gate voltages. As a result, the transparency of the junction as well as the supercurrent trough it can be substantially increased as compared to the zero-Coulomb case.

cond-mat.supr-con↗

arXiv2010

Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field

We observed a slow relaxation of magnetoresistance in response to applied magnetic field in selectively doped p-GaAs-AlGaAs structures with partially filled upper Hubbard band. We have paid a special attention to exclude the effects related to temperature fluctuations. Though this effect is important, we have found that the general features of slow relaxation still persist. This behavior is interpreted as related to the properties of the Coulomb glass formed by charged centers with account of spin correlations, which are sensitive to an external magnetic field. Variation of the magnetic field changes numbers of impurity complexes of different types. As a result, it effects the shape and depth of the polaron gap formed at the states belonging to the percolation cluster responsible for the conductance. The suggested model explains both the qualitative behavior and the order of magnitude of the slowly relaxing magnetoresistance.

cond-mat.mes-hall↗

arXiv2009

Nonequilibrium electrons in tunnel structures under high-voltage injection

We investigate electronic distributions in nonequilibrium tunnel junctions subject to a high voltage bias $V$ under competing electron-electron and electron-phonon relaxation processes. We derive conditions for reaching quasi-equilibrium and show that, though the distribution can still be thermal for low energies where the rate of the electron-electron relaxation exceeds significantly the electron-phonon relaxation rate, it develops a power-law tail at energies of order of $eV$. In a general case of comparable electron-electron and electron-phonon relaxation rates, this tail leads to emission of high-energy phonons which carry away most of the energy pumped in by the injected current.

cond-mat.mes-hall↗

arXiv2008

Memory effects in transport through a hopping insulator: Understanding two-dip experiments

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of the clusters. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.

cond-mat.dis-nn↗

arXiv2008

Slow relaxation of conductance of amorphous hopping insulators

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.

cond-mat.dis-nn↗

arXiv2008

Charge transport through weakly open one dimensional quantum wires

We consider resonant transmission through a finite-length quantum wire connected to leads via finite transparency junctions. The coherent electron transport is strongly modified by the Coulomb interaction. The low-temperature current-voltage ($IV$) curves show step-like dependence on the bias voltage determined by the distance between the quantum levels inside the conductor, the pattern being dependent on the ratio between the charging energy and level spacing. If the system is tuned close to the resonance condition by the gate voltage, the low-voltage $IV$ curve is Ohmic. At large Coulomb energy and low temperatures, the conductance is temperature-independent for any relationship between temperature, level spacing, and coupling between the wire and the leads.

cond-mat.mes-hall↗

arXiv2007

Magnetotransport in low-density $p$-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass

We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hopping between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor $ν$=1) to formation of the Wigner glass in the extreme quantum limit ($B\gtrsim 14$, $T \lesssim 0.8$ K).

cond-mat.mes-hall↗

arXiv2007

Interaction of two level systems in amorphous materials with arbitrary phonon fields

To describe the interaction of the two level systems (TLSs) of an amorphous solid with arbitrary strain fields, we introduce a generalization of the standard interaction Hamiltonian. In this new model, the interaction strength depends on the orientation of the TLS with respect to the strain field through a $6\times 6$ symmetric tensor of deformation potential parameters, $[R]$. Taking into account the isotropy of the amorphous solid, we deduce that $[R]$ has only two independent parameters. We show how these two parameters can be calculated from experimental data and we prove that for any amorphous bulk material the average coupling of TLSs with longitudinal phonons is always stronger than the average coupling with transversal phonons (in standard notations, $γ_l>γ_t$).

cond-mat.dis-nn↗

arXiv2007

Flux saturation number of superconducting rings

The distributions of electrical current and magnetic field in a thin-film superconductor ring is calculated by solving the London equation. The maximum amount of flux trapped by the hole, the fluxoid saturation number, is obtained by limiting the current density by the depairing current. The results are compare it with similar results derived for the bulk case of a long hollow cylinder [Nordborg & Vinokur, Phys. Rev. B 62, 12408 (2000)]. In the limit of small holes our result reduces to the Pearl solution for an isolated vortex in a thin film. For large hole radius, the ratio between saturation numbers in bulk and film superconductors is proportional to the square root of the hole size.

cond-mat.supr-con↗

arXiv2007

The tensor of interaction of a two-level system with an arbitrary strain field

The interaction between two-level systems (TLS) and strain fields in a solid is contained in the diagonal matrix element of the interaction hamiltonian, $δ$, which, in general, has the expression $δ=2[γ]:[S]$, with the tensor $[γ]$ describing the TLS ``deformability'' and $[S]$ being the symmetric strain tensor. We construct $[γ]$ on very general grounds, by associating to the TLS two objects: a direction, $\hat\bt$, and a forth rank tensor of coupling constants, $[[R]]$. Based on the method of construction and on the invariance of the expression of $δ$ with respect to the symmetry transformation of the solid, we conclude that $[[R]]$ has the same structure as the tensor of stiffness constants, $[[c]]$, from elasticity theory. In particular, if the solid is isotropic, $[[R]]$ has only two independent parameters, which are the equivalent of the Lamé constants. Employing this model we calculate the absorption and emission rates of phonons on TLSs and show that in isotropic solids, on average, the longitudinal phonons interact stronger with the TLSs than the transversal ones, as it is observed in experiments. We also show that in isotropic solids, a transversal wave leaves unperturbed all the TLSs with the direction contained in one of the two planes that are perpendicular either to the wave propagation direction or to the polarization direction and that a longitudinal strain applied to the solid polarises the TLS ensemble.

cond-mat.dis-nn↗

arXiv2007

Flux Distribution in Superconducting Films with Holes

Flux penetration into type-II superconducing films is simulated for transverse applied magnetic field and flux creep dynamics. The films contain macroscopic, non-conducting holes and we suggest a new method to introduce the holes in the simulation formalism. The method implies reconstruction of the magnetic field change inside the hole. We find that in the region between the hole and the edge the current density is compressed so that the flux density is slightly reduced, but the traffic of flux is significantly increased. The results are in good agreement with magneto-optical studies of flux distributions in YBCO films.

cond-mat.supr-con↗

arXiv2007

Nonlinearly driven Landau-Zener transition with telegraph noise

We study Landau-Zener like dynamics of a qubit influenced by transverse random telegraph noise. The telegraph noise is characterized by its coupling strength, $v$ and switching rate, $γ$. The qubit energy levels are driven nonlinearly in time, $\propto \sign(t)|t|^ν$, and we derive the transition probability in the limit of sufficiently fast noise, for arbitrary exponent $ν$. The longitudinal coherence after transition depends strongly on $ν$, and there exists a critical $ν_c$ with qualitative difference between $ν< ν_c$ and $ν> ν_c$. When $ν<ν_c$ the end state is always fully incoherent with equal population of both quantum levels, even for arbitrarily weak noise. For $ν>ν_c$ the system keeps some coherence depending on the strength of the noise, and in the limit of weak noise no transition takes place. For fast noise $ν_c=1/2$, while for slow noise $ν_c<1/2$ and it depends on $γ$. We also discuss transverse coherence, which is relevant when the qubit has a nonzero minimum energy gap. The qualitative dependency on $ν$ is the same for transverse as for longitudinal coherence. The state after transition does in general depend on $γ$. For fixed $v$, increasing $γ$ decreases the final state coherence when $ν<1$ and increase the final state coherence when $ν>1$. Only the conventional linear driving is independent of $γ$.

cond-mat.other↗

arXiv2007

Interaction of Lamb modes with two-level systems in amorphous nanoscopic membranes

Using a generalized model of interaction between a two-level system (TLS) and an arbitrary deformation of the material, we calculate the interaction of Lamb modes with TLSs in amorphous nanoscopic membranes. We compare the mean free paths of the Lamb modes with different symmetries and calculate the heat conductivity $κ$. In the limit of an infinitely wide membrane, the heat conductivity is divergent. Nevertheless, the finite size of the membrane imposes a lower cut-off for the phonons frequencies, which leads to the temperature dependence $κ\propto T(a+b\ln T)$. This temperature dependence is a hallmark of the TLS-limited heat conductance at low temperature.

cond-mat.mes-hall↗

arXiv2007

Statistics of Deep Energy States in Coulomb Glasses

We study the statistics of local energy minima in the configuration space and the energy relaxation due to activated hopping in a system of interacting electrons in a random environment. The distribution of the local minima is exponential, which is in agreement with extreme value statistics considerations. The relaxation of the system energy shows logarithmic time dependence reflecting the ultrametric structure of the system.

cond-mat.str-el↗

arXiv2007

Interaction between superconducting vortices and Bloch wall in ferrite garnet film

Interaction between a Bloch wall in a ferrite-garnet film and a vortex in a superconductor is analyzed in the London approximation. Equilibrium distribution of vortices formed around the Bloch wall is calculated. The results agree quantitatively with magneto-optical experiment where an in-plane magnetized ferrite-garnet film placed on top of NbSe2 superconductor allows observation of individual vortices. In particular, our model can reproduce a counter-intuitive attraction observed between vortices and a Bloch wall having the opposite polarity. It is explained by magnetic charges appearing due to discontinuity of the in-plane magnetization across the wall.

cond-mat.supr-con↗