arXiv subjects

Y. Miyata

Publications and source records attributed to Y. Miyata.

6 recordsLinked to original sources

arXiv2023

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it efficient material for spintronics, optoelectronics and valleytronics applications. In this work, we report electrical transport properties of monolayer WSe2 based field effect transistor with most needed multilayer Co/Pt ferromagnetic electrodes exhibiting perpendicular magnetic anisotropy. We studied contacts behaviour by performing I-V curve measurements and estimating Schottky barrier heights (SBHs). SBHs estimated from experimental data are found to be comparatively small, without using any tunnel barrier. This work expands the current understanding of WSe2 based devices and gives insight into the electrical behaviour of Co/Pt metal contacts, which can open great possibilities for spintronic/valleytronic applications.

cond-mat.mtrl-sci↗

arXiv2022

A Pair of Novel Priors for Improving and Extending the Conditional MLE

A Bayesian estimator aiming at improving the conditional MLE is proposed by introducing a pair of priors. After explaining the conditional MLE by the posterior mode under a prior, we define a promising estimator by the posterior mean under a corresponding prior. The prior is equivalent to the reference prior in familiar models. Advantages of the present approach include two different optimality properties of the induced estimator, the ease of various extensions and the possible treatments for a finite sample size. The existing approaches are discussed and critiqued.

stat.ME↗

arXiv2021

A Versatile Post-Doping Towards Two-Dimensional Semiconductors

We have developed a simple and straightforward way to realize controlled post-doping towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. Electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change, p-type action with more than two orders of magnitude increase in on current. Position-selective doping has also been demonstrated by the post-doping toward TMDs with a patterned mask on the surface. The post-doping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.

cond-mat.mtrl-sci↗

arXiv2019

Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10 V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBH reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.

physics.app-ph↗

arXiv2014

Reconstruction of Band Structure Induced by Electronic Nematicity in an FeSe Superconductor

We have performed high-resolution angle-resolved photoemission spectroscopy on FeSe superconductor (Tc ~ 8 K), which exhibits a tetragonal-to-orthorhombic structural transition at Ts ~ 90 K. At low temperature we found splitting of the energy bands as large as 50 meV at the M point in the Brillouin zone, likely caused by the formation of electronically driven nematic states. This band splitting persists up to T ~ 110 K, slightly above Ts, suggesting that the structural transition is triggered by the electronic nematicity. We have also revealed that at low temperature the band splitting gives rise to a van Hove singularity within 5 meV of the Fermi energy. The present result strongly suggests that this unusual electronic state is responsible for the unconventional superconductivity in FeSe.

cond-mat.supr-con↗

arXiv2014

Evolution from incoherent to coherent electronic states and its implications to superconductivity in FeTe1-xSex

We have performed systematic angle-resolved photoemission spectroscopy (ARPES) of iron-chalcogenide superconductor FeTe1-xSex to elucidate the electronic states relevant to the superconductivity. While the Fermi-surface shape is nearly independent of x, we found that the ARPES spectral line shape shows prominent x dependence. A broad ARPES spectrum characterized by a small quasiparticle weight at x = 0, indicative of incoherent electronic states, becomes progressively sharper with increasing x, and a well-defined quasiparticle peak appears around x = 0.45 where bulk superconductivity is realized. The present result suggests the evolution from incoherent to coherent electronic states and its close relationship to the emergence of superconductivity.

cond-mat.supr-con↗