arXiv subjects

Y. P. Sun

Publications and source records attributed to Y. P. Sun.

At least 19 recordsLinked to original sources

arXiv2026

In-plane and out-of-plane electric dipoles and phase transitions in 2D-layered TlGaS2

Out-of-plane and in-plane electric polarization, which rarely coexist in a two-dimensional (2D) ferroelectric material, offer different advantages in ferroelectricity-based devices. Here, we report the coexistence of in-plane and out-of-plane electric dipoles, along with various phase transitions, in 2D van der Waals layered TlGaS2 single crystal. Quantum paraelectricity was observed along both in-plane and out-of-plane directions of the TlGaS2 crystal. Detailed investigation of the quantum paraelectric soft-mode behavior reveals a close correlation between the electric dipoles and the off-center displacement of Tl1+ ions with 6s2 lone pairs in TlGaS2. Anomalies near temperatures of about 120 K and 60-75 K in dielectric and/or infrared spectra indicate the existence of local or weak long-range structural transitions in TlGaS2. Our results provide important experimental evidence for elucidating the phase transitions and coexistence of in-plane and out-of-plane electric dipoles in 2D layered TlGaS2.

cond-mat.mtrl-sci↗

arXiv2024

Intrinsic pinning of FeSe$_1$$_-$$_x$S$_x$ single crystals probed by torque magnetometry

Intrinsic pinning is caused by natural pinning centers that occur because of the modulation of the order parameter or weak superconducting layers. Early work has shown that intrinsic pinning generates a high pinning force and critical current density in some layered oxide superconductors. Studying the intrinsic pinning of superconductors is crucial for both fundamental studies and potential applications. Herein, we use torque magnetometry to study angle-resolved in-plane and out-of-plane magnetic torque for a series of high-quality FeSe$_1$$_-$$_x$S$_x$ single crystals. A fourfold torque signal was observed when the magnetic field was within the \textit{ab} plane. We interpret that this fourfold in-plane irreversible torque is from the intrinsic pinning due to combined effects of gap nodes/minimum and twin domains. Additionally, we attributed the observed out-of-plane torque peaks to intrinsic pinning due to the layered structure.

cond-mat.supr-con↗

arXiv2023

Prediction of Giant Tunneling Magnetoresistance in RuO$_{2}$/TiO$_{2}$/RuO$_{2}$ (110) Antiferromagnetic Tunnel Junctions

Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$ electrodes and an insulating TiO$_{2}$ tunneling barrier. We predict the emergence of a giant tunneling magnetoresistance (TMR) effect in a wide energy window, a series of barrier layer thicknesses, and different interface terminations, indicating the robustness of this effect. We show that the predicted TMR cannot be explained in terms of the global transport spin-polarization of RuO$_{2}$ (110) but is well understood based on matching the momentum-dependent spin-polarized conduction channels of the two RuO$_{2}$ (110) electrodes. We predict oscillations of TMR with increasing barrier thickness, indicating a non-negligible contribution from the perfectly epitaxial interfaces. Our work helps the understanding of the physics of TMR in AFMTJs and aids in realizing efficient AFM spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

X-type stacking in cross-chain antiferromagnets

Physical phenomena in condensed matter normally arise from the collective effect of all atoms, while selectively addressing a lone atomic sublattice by external stimulus is elusive. The later functionality may, however, benefit various applications, as the response may differ when the external stimulus affects only a specific sublattice rather than the entire solid. Here, we introduce cross-chain antiferromagnets, where the stacking of two magnetic sublattices forms a pattern of intersecting atomic chains, allowing for the sublattice selectivity. We dub this antiferromagnetic (AFM) stacking X-type and demonstrate that it exhibits unique spin-dependent transport properties not present in conventional magnets. Through high-throughput analyses and computations, we unveil three prototypes of X-type AFM stacking and identify 15 candidate candidates. Using $\beta$-Fe$_{2}$PO$_{5}$ as a representative X-type antiferromagnet, we predict sublattice-selective spin-polarized transport driven by the X-type stacking, where one magnetic sublattice conducts, while the other does not. Consequently, a spin torque can be exerted solely on a single sublattice, leading to unconventional ultrafast dynamics of the N\`eel vector capable of deterministic switching of the AFM domains. Our work uncovers a previously overlooked type of magnetic moment stacking and reveals sublattice-selective physical properties promising for high-performance spintronic applications.

cond-mat.mtrl-sci↗

arXiv2022

Néel Spin Currents in Antiferromagnets

Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e. staggered spin currents flowing through different magnetic sublattices. The Néel spin currents emerge in antiferromagnets with strong intra-sublattice coupling (hopping) and drive the spin-dependent transport phenomena such as tunneling magnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetic tunnel junctions (AFMTJs). Using RuO$_{2}$ and Fe$_{4}$GeTe$_{2}$ as representative antiferromagnets, we predict that the Néel spin currents with a strong staggered spin-polarization produce a sizable field-like STT capable of the deterministic switching of the Néel vector in the associated AFMTJs. Our work uncovers the previously unexplored potential of fully compensated antiferromagnets and paves a new route to realize the efficient writing and reading of information for antiferromagnetic spintronics.

cond-mat.mes-hall↗

arXiv2022

Spin-Neutral Tunneling Anomalous Hall Effect

Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate that, in contrast to this common expectation, a spin-neutral tunneling AHE (TAHE), i.e. a TAHE driven by spin-neutral currents, can be realized in an antiferromagnetic (AFM) tunnel junction where an AFM electrode with a non-spin-degenerate Fermi surface and a normal metal electrode are separated by a non-magnetic barrier with strong spin-orbit coupling (SOC). The symmetry mismatch between the AFM electrode and the SOC barrier results in an asymmetric spin-dependent momentum filtering of the spin-neutral longitudinal current generating the transverse Hall current in each electrode. We predict a sizable spin-neutral TAHE in an AFM tunnel junction with a RuO$_{2}$-type AFM electrode and a SnTe-type SOC barrier and show that the Hall currents are reversible by the Néel vector switching. With the Hall angle being comparable to that in conventional AHE bulk materials, the predicted spin-neutral TAHE can be used for the Néel vector detection in antiferromagnetic spintronics.

cond-mat.mes-hall↗

arXiv2022

Visualization of Chiral Electronic Structure and Anomalous Optical Response in a Material with Chiral Charge Density Waves

Chiral materials have attracted significant research interests as they exhibit intriguing physical properties, such as chiral optical response, spin-momentum locking and chiral induced spin selectivity. Recently, layered transition metal dichalcogenide 1T-TaS2 has been found to host a chiral charge density wave (CDW) order. Nevertheless, the physical consequences of the chiral order, for example, in electronic structures and the optical properties, are yet to be explored. Here, we report the spectroscopic visualization of an emergent chiral electronic band structure in the CDW phase, characterized by windmill-shape Fermi surfaces. We uncover a remarkable chirality-dependent circularly polarized Raman response due to the salient chiral symmetry of CDW, although the ordinary circular dichroism vanishes. Chiral Fermi surfaces and anomalous Raman responses coincide with the CDW transition, proving their lattice origin. Our work paves a path to manipulate the chiral electronic and optical properties in two-dimensional materials and explore applications in polarization optics and spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$

The magnetic topological materials have attracted significant attention due to their potential realization of variety of novel quantum phenomena. EuIn$_2$As$_2$ has recently been theoretically recognized as a long awaited intrinsic antiferromagnetic bulk axion insulator. However, the experimental study on transport properties arising from the topological states in this material is scarce. In this paper, we perform the detailed magnetoresistance (MR) and Hall measurements to study the magnetotransport properties of this material. We find that the transport is strongly influenced by the spin configuration of the Eu moments from the concomitant change in the field dependence of the MR and that of the magnetization below the Néel temperature. Most importantly, an anomalous Hall effect (AHE) and a large topological Hall effect (THE) are observed. We suggest that the AHE is originated from a nonvanishing net Berry curvature due to the helical spin structure and that the THE is attributed to the formation of a noncoplanar spin texture with a finite scalar spin chirality induced by the external magnetic field in EuIn$_2$As$_2$. Our studies provide a platform to understand the influence of the interplay between the topology of electronic bands and the field-induced magnetic structure on magnetoelectric transport properties. In addition, our observations give a hint to realize axion insulator states and high-order topological insulator states through manipulating the magnetic state of EuIn$_2$As$_2$.

cond-mat.mtrl-sci↗

arXiv2021

Chiral charge density waves induced by Ti-doping in 1T-TaS2

We investigate the Ti-doping effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy (STM) measurements and first-principle calculations. Although the Ti-doping induced phase evolution seems regular with increasing of the doping concentration (x), an unexpected chiral CDW phase is observed in the sample with x = 0.08, in which Ti atoms almost fully occupy the central Ta atoms in the CDW clusters. The emergence of the chiral CDW is proposed to be from the doping-enhanced orbital order. Only when x = 0.08, the possible long-range orbital order can trigger the chiral CDW phase. Compared with other 3d-elements doped 1T-TaS2, the Ti-doping retains the electronic flat band and the corresponding CDW phase, which is a prerequisite for the emergence of chirality. We expect that introducing elements with a strong orbital character may induce a chiral charge order in a broad class of CDW systems. The present results open up another avenue for further exploring the chiral CDW materials.

cond-mat.mtrl-sci↗

arXiv2020

Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe

The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscope (spectroscopy) (STM[S]) measurements on nodal-line semimetal ZrSiSe.Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature,which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures.

cond-mat.mtrl-sci↗

arXiv2020

Superconducting and Topological Properties in Centrosymmetric PbTaS2 Single Crystals

We report the superconductivity of PbTaS2 single crystals with the centrosymmetric structure. The systematic measurements of magnetization, electric transport and specific heat indicate that PbTaS2 is a weakly coupled type-II superconductor with transition temperature Tc = 2.6 K. Furthermore, the band structure calculations predicted four nodal lines near the Fermi energy with drumhead-like surface states, suggesting centrosymmetric PbTaS2 is a candidate of topological nodal line semimetals. These results demonstrate that PbTaS2 may open up another avenue for further exploring the properties of superconductivity and topological nodal-line states.

cond-mat.supr-con↗

arXiv2018

Inversion symmetry breaking induced triply degenerate points in orderly arranged PtSeTe family materials

$k$ paths exactly with $C_{3v}$ symmetry allow to find triply degenerate points (TDPs) in band structures. The paths that host the type-II Dirac points in PtSe$_2$ family materials also have the $C_{3v}$ spatial symmetry. However, due to Kramers degeneracy (the systems have both inversion symmetry and time reversal symmetry), the crossing points in them are Dirac ones. In this work, based on symmetry analysis, first-principles calculations, and $k\cdot p$ method, we predict that PtSe$_2$ family materials should undergo topological transitions if the inversion symmetry is broken, \emph{i.e.} the Dirac fermions in PtSe$_2$ family materials split into TDPs in PtSeTe family materials (PtSSe, PtSeTe, and PdSeTe) with orderly arranged S/Se (Se/Te). It is different from the case in high-energy physics that breaking inversion symmetry $I$ leads to the splitting of Dirac fermion into Weyl fermions. We also address a possible method to achieve the orderly arranged in PtSeTe family materials in experiments. Our study provides a real example that Dirac points transform into TDPs, and is helpful to investigate the topological transition between Dirac fermions and TDP fermions.

cond-mat.mtrl-sci↗

arXiv2018

Critical behavior of two-dimensional intrinsically ferromagnetic semiconductor CrI3

CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical behavior of CrI3 in the vicinity of magnetic transition. We use the modified Arrott plot and Kouvel-Fisher method, and conduct critical isotherm analysis to estimate the critical exponents near the ferromagnetic phase transition. This shows that the magnetism of CrI3 follows the crossover behavior of a 3D-Ising model with mean field type interactions where the critical exponents \b{eta}, γ, and δ are 0.323, 0.835, and 3.585, respectively, at the Curie temperature of 64 K. We propose the crossover behavior can be attributed to the strong uniaxial anisotropy and inevitable interlayer coupling. Our experiment demonstrates the applicability of crossover behavior to a 2D ferromagnetic semiconductor.

cond-mat.mtrl-sci↗

arXiv2018

Magnetoelectric and Raman spectroscopic studies of single-crystalline MnCr2O4

MnCr2O4 that exhibits spin frustration and complex spiral spin order is of great interest from both fundamental as well as application-oriented perspectives. Unlike CoCr2O4 whose ground state presents the coexistence of commensurate spiral spin order (CSSO) and ferroelectric order, MnCr2O4 shows no multiferroicity. One reason is that the spiral spin order is highly sensitive to the oxygen concentration in MnCr2O4. Here, we have successfully grown high-quality single-crystalline MnCr2O4 by the chemical vapor transport method. We observe a new first-order magnetic transition from the incommensurate spiral spin order (ICSSO) at 19.4 K to the CSSO at 17.4 K. This magnetic transition is verified by magnetization, specific heat, and magnetoelectric measurements, which also confirm that the ground state exhibits the coexistence of the CSSO and magnetoelectricity below 17.4 K. Interestingly, the temperature evolution of Raman spectra between 5.4 and 300 K suggests that the structure remains the same. We also find that the phase-transition temperature of the CSSO decreases as applied magnetic field increases up to 45 kOe.

cond-mat.mtrl-sci↗

arXiv2017

Manipulation of type-I and type-II Dirac points in PdTe2 superconductor by external pressure

A pair of type-II Dirac cones in PdTe$_2$ was recently predicted by theories and confirmed in experiments, making PdTe$_2$ the first material that processes both superconductivity and type-II Dirac fermions. In this work, we study the evolution of Dirac cones in PdTe$_2$ under hydrostatic pressure by the first-principles calculations. Our results show that the pair of type-II Dirac points disappears at 6.1 GPa. Interestingly, a new pair of type-I Dirac points from the same two bands emerges at 4.7 GPa. Due to the distinctive band structures compared with those of PtSe$_2$ and PtTe$_2$, the two types of Dirac points can coexist in PdTe$_2$ under proper pressure (4.7-6.1 GPa). The emergence of type-I Dirac cones and the disappearance of type-II Dirac ones are attributed to the increase/decrease of the energy of the states at $Γ$ and $A$ point, which have the anti-bonding/bonding characters of interlayer Te-Te atoms. On the other hand, we find that the superconductivity of PdTe$_2$ slightly decreases with pressure. The pressure-induced different types of Dirac cones combined with superconductivity may open a promising way to investigate the complex interactions between Dirac fermions and superconducting quasi-particles.

cond-mat.mtrl-sci↗

arXiv2017

The origin of the turn-on phenomenon in Td-MoTe2

We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler rule scaling: MR - (H/p0)m with m - 1.92 and the t-o temperature T under different magnetic fields can also be scaled by T - (H-Hc)u with u = 1/2. Secondly, a combination of compensated electron-hole pockets and a possible electronic structure phase transition induced by the temperature have been validated in Td-MoTe2 by the STM/STS experiments. Compared with the STS of Td-MoTe2 single crystal under H = 0, the STS hardly changes even when the applied field is up to 7 T. The origins of the t-o phenomenon in Td-MoTe2 are discussed. Meanwhile, we analyzed the universality and applicability of the t-o phenomenon in the extreme MR materials with almost balanced hole and electron densities as well as with other systems where the density of hole or electron is in dominant position.

cond-mat.mtrl-sci↗

arXiv2017

Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity and Hall resistivity and thermal transport ones (including heat capacity Cp(T) and thermoelectric power (TEP) S(T)) have been measured. There are some interesting phenomena: (i) Cr0.68Se presents a non-collinear antiferromagnetic (AFM) semiconducting behavior with the Neel temperature TN = 42 K and the activated energy Eg=3.9 meV; (ii) It exhibits the anomalous Hall effect (AHE) below TN and large negative magnetoresistance (MR) about 83.7% (2 K, 8.5 T). The AHE coefficient RS is 0.385 cm-3/C at T=2 K and the AHE conductivity σH is about 1 ohm-1cm-1 at T=40 K, respectively; (iii) The scaling behavior between the anomalous Hall resistivity and the longitudinal resistivity is linear and further analysis implies that the origin of the AHE in Cr0.68Se is dominated by the skew-scattering mechanism. Our results may be helpful for exploring the potential application of these kind of 2D AFM semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Manipulating charge-density-wave in monolayer $1T$-TiSe$_2$ by strain and charge doping: A first-principles investigation

We investigate the effects of the in-plane biaxial strain and charge doping on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge doping (electrons and holes) suppress the CDW instability. The tensile strain may provide an effective method for obtaining higher CDW transition temperature on the basis of monolayer $1T$-TiSe$_2$. We also discuss the potential superconductivity in charge-doped monolayer $1T$-TiSe$_2$. Controllable electronic phase transition from CDW state to metallic state or even superconducting state can be realized in monolayer $1T$-TiSe$_2$, which makes $1T$-TiSe$_2$ possess a promising application in controllable switching electronic devices based on CDW.

cond-mat.mtrl-sci↗