arXiv subjects

Y. Pan

Publications and source records attributed to Y. Pan.

49 records · Page 3Linked to original sources

arXiv2015

Low carrier concentration crystals of the topological insulator Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$: a magnetotransport study

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$ single crystals with compositions around $x = 0.5$ and $y = 1.3$. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to $1 μ$m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $α\simeq -1$ as expected for transport dominated by topological surface states.

cond-mat.mes-hall↗

arXiv2015

Magnetic and superconducting phase diagram of the half-Heusler topological semimetal HoPdBi

We report a study of the magnetic and electronic properties of the non-centrosymmetric half-Heusler antiferromagnet HoPdBi ($T_N = 2.0$ K). Magnetotransport measurements show HoPdBi has a semimetallic behaviour with a carrier concentration $n=3.7 \times 10^{18}$ cm$^{-3}$ extracted from the Shubnikov-de Haas effect. The magnetic phase diagram in the field-temperature plane has been determined by transport, magnetization and thermal expansion measurements: magnetic order is suppressed at $B_M\sim 3.6$ T for $T \rightarrow 0$. Superconductivity with $T_c \sim 1.9$ K is found in the antiferromagnetic phase. Ac-susceptibility measurements provide solid evidence for bulk superconductivity below $T_c = 0.75$ K with a screening signal close to a volume fraction of 100 %. The upper critical field shows an unusual linear temperature variation with $B_{c2}(T \rightarrow 0) = 1.1$ T. We also report electronic structure calculations that classify HoPdBi as a new topological semimetal, with a non-trivial band inversion of 0.25 eV.

cond-mat.supr-con↗

arXiv2014

Josephson supercurrent in a topological insulator without a bulk shunt

A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40 nm and lengths in the order of 50 to 80 nm on several Bi1.5Sb0.5Te1.7Se1.3 flakes and measured down to 30 mK. The Fraunhofer patterns unequivocally reveal that the supercurrent is a Josephson supercurrent. The measured critical currents are reproducibly observed on different devices and upon multiple cooldowns, and the critical current dependence on temperature as well as magnetic field can be well explained by diffusive transport models and geometric effects.

cond-mat.supr-con↗

arXiv2013

Kondo hybridisation and the origin of metallic states at the (001) surface of SmB6

SmB6, a well-known Kondo insulator, has been proposed to be an ideal topological insulator with states of topological character located in a clean, bulk electronic gap, namely the Kondo hybridisation gap. Seeing as the Kondo gap arises from many body electronic correlations, this would place SmB6 at the head of a new material class: topological Kondo insulators. Here, for the first time, we show that the k-space characteristics of the Kondo hybridisation process is the key to unravelling the origin of the two types of metallic states observed directly by ARPES in the electronic band structure of SmB6(001). One group of these states is essentially of bulk origin, and cuts the Fermi level due to the position of the chemical potential 20 meV above the lowest lying 5d-4f hybridisation zone. The other metallic state is more enigmatic, being weak in intensity, but represents a good candidate for a topological surface state. However, before this claim can be substantiated by an unequivocal measurement of its massless dispersion relation, our data raises the bar in terms of the ARPES resolution required, as we show there to be a strong renormalisation of the hybridisation gaps by a factor 2-3 compared to theory, following from the knowledge of the true position of the chemical potential and a careful comparison with the predictions from recent LDA+Gutzwiler calculations. All in all, these key pieces of evidence act as triangulation markers, providing a detailed description of the electronic landscape in SmB6, pointing the way for future, ultrahigh resolution ARPES experiments to achieve a direct measurement of the Dirac cones in the first topological Kondo insulator.

cond-mat.mtrl-sci↗

arXiv2013

Superconductivity and magnetic order in the non-centrosymmetric Half Heusler compound ErPdBi

We report superconductivity at $T_c = 1.22$ K and magnetic order at $T_N = 1.06$ K in the semi-metallic noncentrosymmetric Half Heusler compound ErPdBi. The upper critical field, $B_{c2}$, has an unusual quasi-linear temperature variation and reaches a value of 1.6 T for $T \rightarrow 0$. Magnetic order is found below $T_c$ and is suppressed at $B{_M} \sim 2.5$ T for $T \rightarrow 0$. Since $T_c \simeq T_N$, the interaction of superconductivity and magnetism is expected to give rise to a complex ground state. Moreover, electronic structure calculations show ErPdBi has a topologically nontrivial band inversion and thus may serve as a new platform to study the interplay of topological states, superconductivity and magnetic order.

cond-mat.supr-con↗

arXiv2012

PTF11kx: A Type-Ia Supernova with a Symbiotic Nova Progenitor

There is a consensus that Type-Ia supernovae (SNe Ia) arise from the thermonuclear explosion of white dwarf stars that accrete matter from a binary companion. However, direct observation of SN Ia progenitors is lacking, and the precise nature of the binary companion remains uncertain. A temporal series of high-resolution optical spectra of the SN Ia PTF 11kx reveals a complex circumstellar environment that provides an unprecedentedly detailed view of the progenitor system. Multiple shells of circumsteller are detected and the SN ejecta are seen to interact with circumstellar material (CSM) starting 59 days after the explosion. These features are best described by a symbiotic nova progenitor, similar to RS Ophiuchi.

astro-ph.CO↗

arXiv2012

Analysis of the Early-Time Optical Spectra of SN 2011fe in M101

The nearby Type Ia supernova SN 2011fe in M101 (cz=241 km s^-1) provides a unique opportunity to study the early evolution of a "normal" Type Ia supernova, its compositional structure, and its elusive progenitor system. We present 18 high signal-to-noise spectra of SN 2011fe during its first month beginning 1.2 days post-explosion and with an average cadence of 1.8 days. This gives a clear picture of how various line-forming species are distributed within the outer layers of the ejecta, including that of unburned material (C+O). We follow the evolution of C II absorption features until they diminish near maximum light, showing overlapping regions of burned and unburned material between ejection velocities of 10,000 and 16,000 km s^-1. This supports the notion that incomplete burning, in addition to progenitor scenarios, is a relevant source of spectroscopic diversity among SNe Ia. The observed evolution of the highly Doppler-shifted O I 7774 absorption features detected within five days post-explosion indicate the presence of O I with expansion velocities from 11,500 to 21,000 km s^-1. The fact that some O I is present above C II suggests that SN 2011fe may have had an appreciable amount of unburned oxygen within the outer layers of the ejecta.

astro-ph.CO↗

arXiv2009

Graphene based quantum dots

Laterally localized electronic states are identified on a single layer of graphene on ruthenium. The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a quantum dot array, evidenced by quantum well resonances that are modulated by the corrugation of the graphene layer. The quantum well resonances are strongest on the isolated "hill" regions where the graphene is decoupled from the surface. This peculiar nanostructure is expected to become important for single electron physics where it bridges zero-dimensional molecule-like and two-dimensional graphene on a highly regular lattice.

cond-mat.mtrl-sci↗

arXiv2009

Semi-analytical model of acoustic-wave generation by a laser line pulse in an optically absorptive isotropic cylinder

Semi-analytical model for calculating acoustic response to a line-focused laser pulse in an optically absorptive isotropic cylinder is proposed and implemented. It is assumed that the laser input is absorbed over the volume and thus creates a radially distributed thermoelastic source. Closed-form solution is obtained in the Fourier domain. Two inverse Fourier transforms in frequency and circumferential wave number yield the sought waveforms of acoustic response in the time-space domain. Numerical simulation is compared to the calculation based on a surface dipole source. The two signals have essentially different shapes of the wave-arrival peaks when the optical penetration is large enough.

physics.class-ph↗

arXiv2008

A semi-quantitative scattering theory of amorphous materials

It is argued that topological disorder in amorphous solids can be described by local strains related to local reference crystals and local rotations. An intuitive localization criterion is formulated from this point of view. The Inverse Participation Ratio and the location of mobility edges in band tails is directly related to the character of the disorder potential in amorphous solid, the coordination number, the transition integral and the nodes of wave functions of the corresponding reference crystal. The dependence of the decay rate of band tails on temperature and static disorder are derived. \textit{Ab initio} simulations on a-Si and experiments on a-Si:H are compared to these predictions.

cond-mat.dis-nn↗

arXiv2008

Atomistic Origin of Urbach Tails in Amorphous Silicon

Exponential band edges have been observed in a variety of materials, both crystalline and amorphous. In this paper, we infer the structural origins of these tails in amorphous and defective crystalline Si by direct calculation with current {\it ab initio} methods. We find that exponential tails appear in relaxed models of diamond with suitable point defects. In amorphous silicon (a-Si), we find that structural filaments of short bonds and long bonds exist in the network, and that the tail states near the extreme edges of both band tails are are also filamentary, with much localization on the structural filaments. We connect the existence of both filament systems to structural relaxation in the presence of defects and or topological disorder.

cond-mat.dis-nn↗

arXiv2007

Millimeter-Scale, Highly Ordered Single Crystalline Graphene Grown on Ru (0001) Surface

We demonstrate a method for synthesizing large scale single layer graphene by thermal annealing of ruthenium single crystal containing carbon. Low energy electron diffraction indicates the graphene grows to as large as millimeter dimensions with good long-range order, and scanning tunneling microscope shows perfect crystallinity. Analysis of Moire pattern augmented with first-principles calculations shows the graphene layer is incommensurate with the underlying Ru(0001) surface forming a N by N superlattice with an average lattice strain of ~ +0.81%. Our findings offer an effective method for producing high quality single crystalline graphene for fundamental research and large-scale graphene wafer for device fabrication and integration.

cond-mat.mtrl-sci↗

arXiv2007

Network structure and dynamics of hydrogenated amorphous silicon

In this paper we discuss the application of current it ab initio computer simulation techniques to hydrogenated amorphous silicon (a-Si:H). We begin by discussing thermal fluctuation in the number of coordination defects in the material, and its temperature dependence. We connect this to the ``fluctuating bond center detachment" mechanism for liberating H bonded to Si atoms. Next, from extended thermal MD simulation, we illustrate various mechanisms of H motion. The dynamics of the lattice is then linked to the electrons, and we point out that the squared electron-lattice coupling (and the thermally-induced mean square variation in electron energy eigenvalues) is robustly proportional to the localization of the conjugate state, if localization is measured with inverse participation ratio. Finally we discuss the Staebler-Wronski effect using these methods, and argue that a sophisticated local heating picture (based upon reasonable calculations of the electron-lattice coupling and molecular dynamic simulation) explains significant aspects of the phenomenon.

cond-mat.mtrl-sci↗