arXiv subjects

Y. S. Ang

Publications and source records attributed to Y. S. Ang.

4 recordsLinked to original sources

arXiv2022

Quantum interference between fundamentally different processes is enabled by shaped input wavefunctions

We present a general framework for quantum interference (QI) between multiple, fundamentally different processes. Our framework reveals the importance of shaped input wavefunctions in enabling QI, and predicts unprecedented interactions between free electrons, bound electrons, and photons: (i) the vanishing of the zero-loss peak by destructive QI when a shaped electron wavepacket couples to light, under conditions where the electron's zero-loss peak otherwise dominates; (ii) QI between free electron and atomic (bound electron) spontaneous emission processes, which can be significant even when the free electron and atom are far apart, breaking the common notion that electron and atom must be close by to significantly affect each other's processes. Our work shows that emerging quantum waveshaping techniques unlock the door to greater versatility in light-matter interactions and other quantum processes in general.

quant-ph↗

arXiv2020

Efficient generation of extreme terahertz harmonics in 3D Dirac semimetals

Frequency multiplication of terahertz signals on a solid state platform is highly sought-after for the next generation of high-speed electronics and the creation of frequency combs. Solutions to efficiently generate extreme harmonics (up to the $31^{\rm{st}}$ harmonic and beyond) of a terahertz signal with modest input intensities, however, remain elusive. Using fully nonperturbative simulations and complementary analytical theory, we show that 3D Dirac semimetals (DSMs) have enormous potential as compact sources of extreme terahertz harmonics, achieving energy conversion efficiencies beyond $10^{-5}$ at the $31^{\rm{st}}$ harmonic with input intensities on the order of $10$ MW/cm$^2$, over $10^5$ times lower than in conventional THz high harmonic generation systems. Our theory also reveals a fundamental feature in the nonlinear optics of 3D DSMs: a distinctive regime where higher-order optical nonlinearity vanishes, arising as a direct result of the extra dimensionality in 3D DSMs compared to 2D DSMs. Our findings should pave the way to the development of efficient platforms for high-frequency terahertz light sources and optoelectronics based on 3D DSMs.

physics.optics↗

arXiv2017

Relativistic space-charge-limited current for massive Dirac fermions

A theory of relativistic space-charge-limited current (SCLC) is formulated to determine the SCLC scaling, $J\propto V^α/L^β$, for a finite bandgap Dirac material of length $L$ biased under a voltage $V$. In a one-dimensional (1D) bulk geometry, our model allows ($α$, $β$) to vary from (2,3) for the non-relativistic model in traditional solids to (3/2,2) for the ultra-relativistic model of massless Dirac fermions. For a two-dimensional (2D) thin-film geometry, we obtain $α= β$ that varies between 2 and 3/2, respectively, at the non-relativistic and ultra-relativistic limits. We further provide a rigorous proof based on a Green's function approach that for uniform SCLC model described by carrier density-dependent mobility, the scaling relations of the 1D bulk model can be directly mapped into the case of 2D thin film for any contact geometries. Our simplified approach provides a convenient tool to obtain the 2D thin-film SCLC scaling relations without the need of explicitly solving the complicated 2D problems. Finally, this work clarifies the inconsistency in using the traditional SCLC models to explain the experimental measurement of 2D Dirac semiconductor. We conclude that the voltage-scaling $3/2 < α< 2$ is a distinct signature of massive Dirac fermions in Dirac semiconductor and is in agreement with experimental SCLC measurement in MoS$_2$.

cond-mat.mes-hall↗

arXiv2016

Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion

In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto T^2$ in the conventional Schottky interface and $J\propto T^3$ in graphene-based Schottky interface can be reconciled under Kane's $\mathbf{k} \cdot \mathbf{p}$ non-parabolic band model for narrow-gap semiconductor. Our new model suggests a more general form of $J\propto \left(T^2 + γk_BT^3 \right)$, where the non-parabolicty parameter, $γ$, provides a smooth transition from $T^2$ to $T^3$ scaling. For few-layer graphene, it is found that $N$-layers graphene with $ABC$-stacking follows $J\propto T^{2/N+1}$ while $ABA$-stacking follows a universal form of $J\propto T^3$ regardless of the number of layers. Intriguingly, the Richardson constant extracted from the Arrhenius plot using an incorrect scaling relation disagrees with the actual value by two orders of magnitude, suggesting that correct models must be used in order to extract important properties for many novel Schottky devices.

cond-mat.mes-hall↗