arXiv subjects

Y. S. Hor

Publications and source records attributed to Y. S. Hor.

At least 37 records · Page 2Linked to original sources

arXiv2012

Optical conductivity of Bismuth-based topological insulator

The optical conductivity and the spectral weight of four topological insulators with increasing chemical compensation (Bi2Se3, Bi2-xCaxSe3, Bi2Se2Te, Bi2Te2Se) have been measured from 5 to 300 K and from sub-THz to visible frequencies. The effect of compensation is clearly observed in the infrared spectra, through the suppression of an extrinsic Drude term and the appearance of strong absorption peaks, that we assign to electronic transitions among localized states. From the far-infrared spectral weight of the most compensated sample (Bi2Te2Se) one can estimate a density of charge-carriers in the order of 10^17/cm^3 in good agreement with transport data. Those results demonstrate that the low-energy electrodynamics in single crystals of topological insulators, even at the highest degree of compensation presently achieved, is still affected by extrinsic charge excitations.

cond-mat.mtrl-sci↗

arXiv2012

Quantum oscillations in topological superconductor candidate Cu$_{0.25}$Bi$_2$Se$_3$

Quantum oscillations are generally studied to resolve the electronic structure of topological insulators. In Cu$_{0.25}$Bi$_2$Se$_3$, the prime candidate of topological superconductors, quantum oscillations are still not observed in magnetotransport measurement. However, using torque magnetometry, quantum oscillations (the de Hass - van Alphen effect) were observed in Cu$_{0.25}$Bi$_2$Se$_3$ . The doping of Cu in Bi$_2$Se$_3$ increases the carrier density and the effective mass without increasing the scattering rate or decreasing the mean free path. In addition, the Fermi velocity remains the same in Cu$_{0.25}$Bi$_2$Se$_3$ as that in Bi$_2$Se$_3$. Our results imply that the insertion of Cu does not change the band structure of Bi$_2$Se$_3$.

cond-mat.str-el↗

arXiv2012

Electron behavior in topological insulator based P-N overlayer interfaces

Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle resolved photoemission spectroscopy while depositing cathodic and anodic adatoms on the TI surfaces to add charge carriers of the opposite sign from bulk dopants. These P-N overlayer interfaces create Dirac point transport regimes and larger interface potentials than previous N-N type surface deposition studies, revealing unconventional Rashba-like and surface-bulk electron interactions, and an unusual characteristic distribution of spectral weight near the Dirac point in TI Dirac point interfaces. The electronic structures of P-N doped topological interfaces observed in these experiments are an important step towards the understanding of solid interfaces with topological materials.

cond-mat.mtrl-sci↗

arXiv2012

Effects of iron doping on the topological insulator surfaces

Topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap. So far, most of the study on topological insulator surfaces has been limited to understanding their properties without strong Coulomb perturbation or breaking of time reversal symmetry. We have used deposited iron, with a large positive ionization state and significant magnetic moment as a strong probe to modify the surface electronic structure of the Bi2Se3 surface at the gap energy scale. We observe that such perturbation leads to the creation of multiple Dirac fermions consistent with Z2 or Mod(2) symmetry. Taken collectively, these results are a helpful guide in manipulating topological surfaces for probing fundamental physics or developing device applications.

cond-mat.mes-hall↗

arXiv2012

Signatures of Fractional Quantum Hall States in Topological Insulators

The fractional quantum Hall (FQH) state is a topological state of matter resulting from the many-body effect of interacting electrons and is of vast interest in fundamental physics. The experimental observation of topological surface states (SSs) in three-dimensional bulk solids has allowed the study of a correlated chiral Dirac fermion system, which can host a single Dirac valley without spin degeneracy. Recent theoretical studies suggest that the fractional quantum Hall effect (FQHE) might be observable in topological insulators. However, due to the dominant bulk conduction it is difficult to probe the strong correlation effect in topological insulators from resistivity measurements. Here we report the discovery of FQH states in Bi2Te3 from thermopower measurements. The surface thermopower is ten times greater than that of bulk, which makes possible the observation of fractional-filled Landau levels in SSs. Thermopower hence provides a powerful tool to investigate correlated Dirac fermions in topological insulators. Our observations demonstrate that Dirac topological SSs exhibit strongly correlated phases in a high magnetic field, and would enable studies of a variety of exotic fractional quantum Hall physics and other correlated phenomena in this newly discovered chiral Dirac system.

cond-mat.str-el↗

arXiv2011

Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi$_2$Se$_3$

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi$_2$Se$_3$ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage $V_g$. We find that the temperature $T$ and magnetic field dependent transport properties in the vicinity of this $V_g$ can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high mobility metallic channel that dominates at low $T$. The conductance (approximately 2 $\times$ 7$e^2/h$), weak anti-localization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for EFE topological insulator devices at room temperature.

cond-mat.mes-hall↗

arXiv2011

Direct observation of spin-polarized surface states in the parent compound of topological insulator Bi-Sb using spin-resolved-ARPES in a 3D Mott-polarimetry spin mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the first discovered 3D topological insulator Bi{1-x}Sb{x} [D. Hsieh et al., Nature 452, 970 (2008) Submitted 2007]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a $k$-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of first bulk (3D) topological insulator - topological order in bulk solids. [Invited article for NJP-IOP Focus issue on "Topological Insulators"]

cond-mat.mes-hall↗

arXiv2011

Realization of an isolated Dirac node and strongly modulated Spin Texture in the topological insulator Bi2Te3

The development of spin-based applications of topological insulators requires the knowledge and understanding of spin texture configuration maps as they change via gating in the vicinity of an isolated Dirac node. An isolated (graphene-like) Dirac node, however, does not exist in Bi2Te3. While the isolation of surface states via transport channels has been promisingly achieved in Bi2Te3, it is not known how spin textures modulate while gating the surface. Another drawback of Bi2Te3 is that it features multiple band crossings while chemical potential is placed near the Dirac node (at least 3 not one as in Bi2Se3 and many other topological insulators) and its buried Dirac point is not experimentally accessible for the next generation of experiments which require tuning the chemical potential near an isolated (graphene-like) Dirac node. Here, we image the spin texture of Bi2Te3 and suggest a simple modification to realize a much sought out isolated Dirac node regime critical for almost all potential applications (of topological nature) of Bi2Te3. Finally, we demonstrate carrier control in magnetically and nonmagnetically doped Bi2Te3 essential for realizing giant magneto-optical effects and dissipationless spin current devices involving a Bi2Te3-based platform.

cond-mat.mes-hall↗

arXiv2010

Discovery of several large families of Topological Insulator classes with backscattering-suppressed spin-polarized single-Dirac-cone on the surface

Three dimensional (3D) topological insulators are novel states of quantum matter that feature spin-momentum locked helical Dirac fermions on their surfaces and hold promise to open new vistas in spintronics, quantum computing and fundamental physics. Experimental realization of many of the predicted topological phenomena requires finding multi-variant topological band insulators which can be multiply connected to magnetic semiconductors and superconductors. Here we present our theoretical prediction and experimental discovery of several new topological insulator classes in AB2X4(124), A2B2X5(225), MN4X7(147), A2X2X'(221) [A,B=Pb,Ge,Sb,Bi and M,N=Pb,Bi and X,X'=Chalcogen family]. We observe that these materials feature gaps up to about 0.35eV. Multi-variant nature allows for diverse surface dispersion tunability, Fermi surface spin-vortex or textured configurations and spin-dependent electronic interference signaling novel quantum transport processes on the surfaces of these materials. Our discovery also provides several new platforms to search for topological-superconductivity (arXiv:0912.3341v1 (2009)) in these exotic materials.

cond-mat.mes-hall↗

arXiv2010

Transmission of topological surface states through surface barriers

Topological surface states are a class of novel electronic states that are of potential interest in quantum computing or spintronic applications. Unlike conventional two-dimensional electron states, these surface states are expected to be immune to localization and to overcome barriers caused by material imperfection. Previous experiments have demonstrated that topological surface states do not backscatter between equal and opposite momentum states, owing to their chiral spin texture. However, so far there is no evidence that these states in fact transmit through naturally occurring surface defects. Here we use a scanning tunnelling microscope to measure the transmission and reflection probabilities of topological surface states of antimony through naturally occurring crystalline steps separating atomic terraces. In contrast to nontopological surface states of common metals (copper, silver and gold), which are either reflected or absorbed by atomic steps, we show that topological surface states of antimony penetrate such barriers with high probability. This demonstration of the extended nature of antimony's topological surface states suggests that such states may be useful for high current transmission even in the presence of atomic scale irregularities-an electronic feature sought to efficiently interconnect nanoscale devices.

cond-mat.mes-hall↗

arXiv2010

Superconductivity at 2.3 K in the misfit compound (PbSe)1.16(TiSe2)2

The structural misfit compound (PbSe)1.16(TiSe2)2 is reported. It is a superconductor with a Tc of 2.3 K. (PbSe)1.16(TiSe2)2 derives from a parent compound, TiSe2, which shows a charge density wave transition and no superconductivity. The crystal structure, characterized by high resolution electron microscopy and powder x-ray diffraction, consists of two layers of 1T-TiSe2 alternating with a double layer of (100) PbSe. Transport measurements suggest that the superconductivity is induced by charge transfer from the PbSe layers to the TiSe2 layers.

cond-mat.supr-con↗

arXiv2010

Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3

We show that by Ca-doping the Bi2Se3 topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppress the bulk conductivity. Non-metallic Bi2Se3 crystals are obtained. On the other hand, the Bi2Se3 topological insulator can also be induced to become a bulk superconductor, with Tc ~ 3.8 K, by copper intercalation in the van der Waals gaps between the Bi2Se3 layers. Likewise, an as-grown crystal of metallic Bi2Te3 can be turned into a non-metallic crystal by slight variation of the Te content. The Bi2Te3 topological insulator shows small amounts of superconductivity with Tc ~ 5.5 K when reacted with Pd to form materials of the type PdxBi2Te3.

cond-mat.str-el↗

arXiv2010

The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi1.96Mn0.04Te3 and Bi1.91Mn0.09Te3 a second order ferromagnetic transition is observed, with Tc ~ 9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p-type. Angle resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2Te3 are also present in ferromagnetic Mn-doped Bi2-xMnxTe3, and that the dispersion relations of the surface states are changed in a subtle fashion.

cond-mat.mtrl-sci↗

arXiv2010

Direct observation of spin-polarized surface states in the parent compound of a topological insulator using high-resolution spin-resolved-ARPES spectroscopy in a Mott-polarimetry mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a k-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of topological insulator states in the Bi-Sb series.

cond-mat.mes-hall↗

arXiv2010

First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime

Both the theoretical and experimental discovery of single-Dirac-cone topological-insulator-class was reported at arXiv:0812.2078 (2008) [Y. Xia et.al., Nature Physics 5, 398-402 (2009) http://www.nature.com/nphys/journal/v5/n6/full/nphys1294.html]. Here we report the first observation of Spin-Momentum Helical Locking and Spin-Vortex structures in Bi2Se3 and Bi2Te3, demonstrate the existence of Topological-Order at 300K and report a material realization of topological-transport-regime for helical Dirac fermions. Our results reveal a one-to-one spin-momentum locked Dirac structure in Bi2Se3 and Bi2Te3 that is nearly 100% spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers' point and can be driven to the long-sought topological-transport-regime. The observed topological nodal Dirac ground state is found to be protected even up to room temperature (300 K). Our results pave the way for future transport based studies of topological insulators, and possible room temperature applications of protected spin-polarized edge channels we observe with spin-ARPES in spintronic technology. All of these new results are made possible due to the Spin-resolved-ARPES (Mott polarimetric) technique [http://www.nature.com/nature/journal/v460/n7259/full/nature08234.html ] .

cond-mat.mes-hall↗

arXiv2009

Quantum interference in macroscopic crystals of non-metallic Bi$_2$Se$_3$

Photoemission experiments have shown that Bi$_2$Se$_3$ is a topological insulator. By controlled doping, we have obtained crystals of Bi$_2$Se$_3$ with non-metallic conduction. At low temperatures, we uncover a novel type of magnetofingerprint signal which involves the spin degrees of freedom. Given the mm-sized crystals, the observed amplitude is 200-500$\times$ larger than expected from universal conductance fluctuations. The results point to very long phase breaking lengths in an unusual conductance channel in these non-metallic samples. We discuss the nature of the in-gap conducting states and their relation to the topological surface states.

cond-mat.mes-hall↗

arXiv2009

A topological Dirac insulator in a quantum spin Hall phase (experimental realization of a 3D Topological Insulator)

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect \cite{Klitzing,Tsui} dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the extreme quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi{1-x}Sbx single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic spin-textured surface states that are higher dimensional analogues of the edge states that characterize a quantum spin Hall insulator. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy, we report the direct observation of massive Dirac particles in the bulk of Bi0.9Sb0.1, locate the Kramers' points at the sample's boundary and provide a comprehensive mapping of the topological Dirac insulator's gapless surface modes. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the much sought exotic "topological metal". They also suggest that this material has potential application in developing next-generation quantum computing devices that may incorporate "light-like" bulk carriers and topologically protected spin-textured edge-surface currents. This work is a detailed version of [Hsieh et.al., NATURE 452, 970 (2008), {Submitted in November 2007}].

cond-mat.mes-hall↗

arXiv2009

Observation of topologically protected Dirac spin-textures and πBerry's phase in pure Antimony (Sb) and topological insulator BiSb

A topologically ordered material is characterized by a rare quantum organization of electrons that evades the conventional spontaneously broken symmetry based classification of condensed matter. Exotic spin transport phenomena such as the dissipationless quantum spin Hall effect have been speculated to originate from a novel topological order whose identification requires a spin sensitive measurement. Using Spin-resolved-ARPES, we probe the spin degrees of freedom and demonstrate that topological quantum numbers are uniquely determined from spin-texture Berry Phase imaging measurements. Applying this method to pure antimony (Sb) and Bi-Sb, we identify the origin of its novel Topological Order and the negative value of the mirror Chern number. These results taken together constitute the first observation of surface electrons collectively carrying a topological Berry's phase and definite mirror Chern chirality in pure Antimony (Sb) which are the key electronic properties for realizing topological quantum computing via the interface Majorana fermion framework. This paper contains the details of the above mentioned previously reported (Science \textbf{323}, 919 (2009)) results.

cond-mat.mes-hall↗