arXiv subjects

Y. T. Chan

Publications and source records attributed to Y. T. Chan.

3 recordsLinked to original sources

arXiv2020

Stabilization of antiferromagnetism in 1T-Fe$_{0.05}$TaS$_2$

1T-TaS$_2$ is a prototypical charge-density-wave (CDW) system with a Mott insulating ground state. Usually, a Mott insulator is accompanied by an antiferromagnetic state. However, the antiferromagnetic order had never been observed in 1T-TaS$_2$. Here, we report the stabilization of the antiferromagnetic order by the intercalation of a small amount of Fe into the van der Waals gap of 1T-TaS$_2$, i.e. forming 1T-Fe$_{0.05}$TaS$_2$. Upon cooling from 300~K, the electrical resistivity increases with a decreasing temperature before reaching a maximum value at around 15~K, which is close to the Neel temperature determined from our magnetic susceptibility measurement. The antiferromagnetic state can be fully suppressed when the sample thickness is reduced, indicating that the antiferromagnetic order in Fe$_{0.05}$TaS$_2$ has a non-negligible three-dimensional character. For the bulk Fe$_{0.05}$TaS$_2$, a comparison of our high pressure electrical transport data with that of 1T-TaS$_2$ indicates that, at ambient pressure, Fe$_{0.05}$TaS$_2$ is in the nearly commensurate charge-density-wave (NCCDW) phase near the border of the Mott insulating state. The temperature-pressure phase diagram thus reveals an interesting decoupling of the antiferromagnetism from the Mott insulating state.

cond-mat.str-el↗

arXiv2018

Anisotropic two-gap superconductivity and the absence of a Pauli paramagnetic limit in single-crystalline LaO$_{0.5}$F$_{0.5}$BiS$_2$

Ambient-pressure-grown LaO$_{0.5}$F$_{0.5}$BiS$_2$ with a superconducting transition temperature $T_{c}\sim$3K possesses a highly anisotropic normal state. By a series of electrical resistivity measurements with a magnetic field direction varying between the crystalline $c$-axis and the $ab$-plane, we present the first datasets displaying the temperature dependence of the out-of-plane upper critical field $H_{c2}^{\perp}(T)$, the in-plane upper critical field $H_{c2}^{\parallel}(T)$, as well as the angular dependence of $H_{c2}$ at fixed temperatures for ambient-pressure-grown LaO$_{0.5}$F$_{0.5}$BiS$_2$ single crystals. The anisotropy of the superconductivity, $H_{c2}^{\parallel}/H_{c2}^{\perp}$, reaches $\sim$16 on approaching 0 K, but it decreases significantly near $T_{c}$. A pronounced upward curvature of $H_{c2}^{\parallel}(T)$ is observed near $T_{c}$, which we analyze using a two-gap model. Moreover, $H_{c2}^{\parallel}(0)$ is found to exceed the Pauli paramagnetic limit, which can be understood by considering the strong spin-orbit coupling associated with Bi as well as the breaking of the local inversion symmetry at the electronically active BiS$_2$ bilayers. Hence, LaO$_{0.5}$F$_{0.5}$BiS$_2$ with a centrosymmetric lattice structure is a unique platform to explore the physics associated with local parity violation in the bulk crystal.

cond-mat.supr-con↗

arXiv2010

Range-Free Localization with the Radical Line

Due to hardware and computational constraints, wireless sensor networks (WSNs) normally do not take measurements of time-of-arrival or time-difference-of-arrival for rangebased localization. Instead, WSNs in some applications use rangefree localization for simple but less accurate determination of sensor positions. A well-known algorithm for this purpose is the centroid algorithm. This paper presents a range-free localization technique based on the radical line of intersecting circles. This technique provides greater accuracy than the centroid algorithm, at the expense of a slight increase in computational load. Simulation results show that for the scenarios studied, the radical line method can give an approximately 2 to 30% increase in accuracy over the centroid algorithm, depending on whether or not the anchors have identical ranges, and on the value of DOI.

cs.IT↗