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Y. Zhou

Publications and source records attributed to Y. Zhou.

At least 127 records · Page 7Linked to original sources
arXiv2012

Single-parameter quantum charge and spin pumping in armchair graphene nanoribbons

We investigate quantum charge and spin pumping in armchair graphene nanoribbons under a single ac gate voltage connected with nonmagnetic/ferromagnetic leads via the nonequilibrium Green's function method. In the case of nonmagnetic leads, where only part of the nanoribbon is subject to an ac gate voltage to break the left-right spatial symmetry, we discover that peaks of the charge pumping current appear at the Fermi energies around the subband edges in the ac-field-free region of the nanoribbon. In the case of ferromagnetic leads with the lead magnetizations being antiparallel to break the left-right symmetry, similar peaks appear in the spin pumping current when the Fermi energies are around the edges of the the majority-spin subbands in the ferromagnetic leads. All these peaks originate from the pronounced symmetry breaking in the transmissions with energies being around the corresponding subband edges. Moreover, we predict a {\em pure} spin current in the case of ferromagnetic leads with the whole graphene nanoribbon under an ac gate voltage. The ac-field-strength and -frequency dependences of the pumping current are also investigated with the underlying physics revealed.

cond-mat.mes-hall↗
arXiv2012

EGAM Induced by Energetic-electrons and Nonlinear Interactions among EGAM, BAEs and Tearing Modes in a Toroidal Plasma

In this letter, it is reported that the first experimental results are associated with the GAM induced by energetic electrons (eEGAM) in HL-2A Ohmic plasma. The energetic-electrons are generated by parallel electric fields during magnetic reconnection associated with tearing mode (TM). The eEGAM localizes in the core plasma, i.e. in the vicinity of q=2 surface, and is very different from one excited by the drift-wave turbulence in the edge plasma. The analysis indicated that the eEGAM is provided with the magnetic components, whose intensities depend on the poloidal angles, and its mode numbers are jm/nj=2/0. Further, there exist intense nonlinear interactions among eEGAM, BAEs and strong tearing modes (TMs). These new findings shed light on the underlying physics mechanism for the excitation of the low frequency (LF) Alfvénic and acoustic uctuations.

physics.plasm-ph↗
arXiv2012

Electron spin relaxation in rippled graphene with low mobilities

We investigate spin relaxation in rippled graphene where curvature induces a Zeeman-like spin-orbit coupling with opposite effective magnetic fields along the graphene plane in ${\bf K}$ and ${\bf K}^\prime$ valleys. The joint effect of this Zeeman-like spin-orbit coupling and the intervalley electron-optical phonon scattering opens a spin relaxation channel, which manifests itself in low-mobility samples with the electron mean free path being smaller than the ripple size. Due to this spin relaxation channel, with the increase of temperature, the relaxation time for spins perpendicular to the effective magnetic field first decreases and then increases, with a minimum of several hundred picoseconds around room temperature. However, the spin relaxation along the effective magnetic field is determined by the curvature-induced Rashba-type spin-orbit coupling, leading to a temperature-insensitive spin relaxation time of the order of microseconds. Therefore, the in-plane spin relaxation in low-mobility rippled graphene is anisotropic. Nevertheless, in the presence of a small perpendicular magnetic field, as usually applied in the Hanle spin precession measurement, the anisotropy of spin relaxation is strongly suppressed.

cond-mat.mes-hall↗
arXiv2011

Dynamics of photoexcited carriers in graphene

The nonequilibrium dynamics of carriers and phonons in graphene is investigated by solving the microscopic kinetic equations with the carrier-phonon and carrier-carrier Coulomb scatterings explicitly included. The Fermi distribution of hot carriers are found to be established within 100 fs and the temperatures of electrons in the conduction and valence bands are very close to each other, even when the excitation density and the equilibrium density are comparable, thanks to the strong inter-band Coulomb scattering. Moreover, the temporal evolutions of the differential transmission obtained from our calculations agree with the experiments by Wang et al. [Appl. Phys. Lett. 96, 081917 (2010)] and Hale et al. [Phys. Rev. B 83, 121404 (2011)] very well, with two distinct differential transmission relaxations presented. We show that the fast relaxation is due to the rapid carrier-phonon thermalization and the slow one is mainly because of the slow decay of hot phonons. In addition, it is found that the temperatures of the hot phonons in different branches are different and the temperature of hot carriers can be even lower than that of the hottest phonons. Finally, we show that the slow relaxation rate exhibits a mild valley in the excitation density dependence and is linearly dependent on the probe-photon energy.

cond-mat.mes-hall↗
arXiv2011

Optical response of graphene under intense terahertz fields

Optical responses of graphene in the presence of intense circularly and linearly polarized terahertz fields are investigated based on the Floquet theory. We examine the energy spectrum and density of states. It is found that gaps open in the quasi-energy spectrum due to the single-photon/multi-photon resonances. These quasi-energy gaps are pronounced at small momentum, but decrease dramatically with the increase of momentum and finally tend to be closed when the momentum is large enough. Due to the contribution from the states at large momentum, the gaps in the density of states are effectively closed, in contrast to the prediction in the previous work by Oka and Aoki [Phys. Rev. B {\bf 79}, 081406(R) (2009)]. We also investigate the optical conductivity for different field strengths and Fermi energies, and show the main features of the dynamical Franz-Keldysh effect in graphene. It is discovered that the optical conductivity exhibits a multi-step-like structure due to the sideband-modulated optical transition. It is also shown that dips appear at frequencies being the integer numbers of the applied terahertz field frequency in the case of low Fermi energy, originating from the quasi-energy gaps at small momentums. Moreover, under a circularly polarized terahertz field, we predict peaks in the middle of the "steps" and peaks induced by the contribution from the states around zero momentum in the optical conductivity.

cond-mat.mes-hall↗
arXiv2010

Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction

Electron spin relaxation in graphene on a substrate is investigated from the fully microscopic kinetic spin Bloch equation approach. All the relevant scatterings, such as the electron-impurity, electron--acoustic-phonon, electron--optical-phonon, electron--remote-interfacial-phonon, as well as electron-electron Coulomb scatterings, are explicitly included. Our study concentrates on clean intrinsic graphene, where the spin-orbit coupling from the adatoms can be neglected. We discuss the effect of the electron-electron Coulomb interaction on spin relaxation under various conditions. It is shown that the electron-electron Coulomb scattering plays an important role in spin relaxation at high temperature. We also find a significant increase of the spin relaxation time for high spin polarization even at room temperature, which is due to the Coulomb Hartree-Fock contribution-induced effective longitudinal magnetic field. It is also discovered that the spin relaxation time increases with the in-plane electric field due to the hot-electron effect, which is different from the non-monotonic behavior in semiconductors. Moreover, we show that the electron-electron Coulomb scattering in graphene is not strong enough to establish the steady-state hot-electron distribution in the literature and an alternative approximate one is proposed based on our computation.

cond-mat.mtrl-sci↗
arXiv2010

Higher Moments of Net-Baryon Distribution as Probes of QCD Critical Point

It is crucially important to find an observable which is independent on the acceptance and late collision process, in order to search for the possible Critical Point predicted by QCD. By utilizing A Multi-Phase Transport (AMPT) model and Ultra Relativistic Quantum Molecular Dynamics (UrQMD) model, we study the centrality and evolution time dependence of higher moments of net-baryon distribution in Au + Au collisions at $\sqrt{s_{NN}}=17.3$ GeV. The results suggest that Kurtosis and Skewness are less sensitive to the acceptance effect and late collision process. Thus, they should be good observables providing the information of the early stage of heavy ion collision. In addition, our study shows that the Kurtosis times $σ^{2}$ of net-proton distribution are quite different to that of net-baryon when collisions energy is lower than $\sqrt{s_{NN}}$ = 20 GeV, the Monte Calor calculations on Kurtosis$\cdotσ^{2}$ have a deviation from the theoretical predictions.

nucl-th↗
arXiv2010

Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells

We investigate the spin relaxation due to the random Rashba spin-orbit coupling in symmetric GaAs (110) quantum wells from the fully microscopic kinetic spin Bloch equation approach. All relevant scatterings, such as the electron-impurity, electron--longitudinal-optical-phonon, electron--acoustic-phonon, as well as electron-electron Coulomb scatterings are explicitly included. It is shown that our calculation reproduces the experimental data by Müller {\em et al.} [Phys. Rev. Lett. {\bf 101}, 206601 (2008)] for a reasonable choice of parameter values. We also predict that the temperature dependence of spin relaxation time presents a peak in the case with low impurity density, which originates from the electron-electron Coulomb scattering.

cond-mat.mes-hall↗
arXiv2009

Electron spin relaxation in $p$-type GaAs quantum wells

We investigate electron spin relaxation in $p$-type GaAs quantum wells from a fully microscopic kinetic spin Bloch equation approach, with all the relevant scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb and electron-hole exchange (the Bir-Aronov-Pikus mechanism) scatterings explicitly included. From this approach, we examine the relative importance of the D'yakonov-Perel' and Bir-Aronov-Pikus mechanisms in wide ranges of temperature, hole density, excitation density and impurity density, and present a phase-diagram--like picture showing the parameter regime where the D'yakonov-Perel' or Bir-Aronov-Pikus mechanism is more important. By including more hole subbands and bands in our model, we are able to study spin dynamics at high hole density. It is shown that the Bir-Aronov-Pikus mechanism can surpass the D'yakonov-Perel' mechanism in some temperature regime with sufficiently high hole density for various impurity and excitation densities. We also discover that in the impurity-free case the temperature regime where the Bir-Aronov-Pikus mechanism is more efficient than the D'yakonov-Perel' one is around the hole Fermi temperature for high hole density, regardless of excitation density. However, in the high impurity density case with the impurity density being identical to the hole density, this regime is roughly from the electron Fermi temperature to the hole Fermi temperature. Particularly, the Bir-Aronov-Pikus mechanism can dominate the spin relaxation in the {\em whole} temperature regime of the investigation (from 5 K to 300 K) in the case with high impurity and very low excitation densities, since the electron (hole) Fermi temperature is... (The remaining is omitted due to the limit of the space)

cond-mat.mtrl-sci↗
arXiv2009

A virtual intersubband spin-flip spin-orbit coupling induced spin relaxation in GaAs (110) quantum wells

A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110) quantum wells with high impurity density. The dependences of the spin relaxation time on electron density, temperature and well width are studied with the underlying physics analyzed.

cond-mat.mes-hall↗
arXiv2009

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb, electron-hole exchange (the Bir-Aronov-Pikus mechanism) and the $s$-$d$ exchange scatterings, are explicitly included. The Elliot-Yafet mechanism is also incorporated. From this approach, we study the spin relaxation in both $n$-type and $p$-type Ga(Mn)As quantum wells. For $n$-type Ga(Mn)As quantum wells where most Mn ions take the interstitial positions, we find that the spin relaxation is always dominated by the DP mechanism in metallic region. Interestingly, the Mn concentration dependence of the spin relaxation time is nonmonotonic and exhibits a peak. This behavior is because that the momentum scattering and the inhomogeneous broadening have different density dependences in the non-degenerate and degenerate regimes. For $p$-type Ga(Mn)As quantum wells, we find that Mn concentration dependence of the spin relaxation time is also nonmonotonic and shows a peak. Differently, this behavior is because that the $s$-$d$ exchange scattering (or the Bir-Aronov-Pikus) mechanism dominates the spin relaxation in the high Mn concentration regime at low (or high) temperature, whereas the DP mechanism determines the spin relaxation in the low Mn concentration regime. The Elliot-Yafet mechanism also contributes the spin relaxation at intermediate temperature. The spin relaxation time due to the DP mechanism increases with Mn concentration due to motional narrowing, whereas those due to the spin-flip mechanisms decrease with Mn concentration, which thus leads to the formation of the peak.... (The remaining is omitted due to the space limit)

cond-mat.mtrl-sci↗
arXiv2008

Kinetics of spin coherence of electrons in $n$-type InAs quantum wells under intense terahertz laser fields

Spin kinetics in $n$-type InAs quantum wells under intense terahertz laser fields is investigated by developing fully microscopic kinetic spin Bloch equations via the Floquet-Markov theory and the nonequilibrium Green's function approach, with all the relevant scattering, such as the electron-impurity, electron-phonon, and electron-electron Coulomb scattering explicitly included. We find that a {\em finite} steady-state terahertz spin polarization induced by the terahertz laser field, first predicted by Cheng and Wu [Appl. Phys. Lett. {\bf 86}, 032107 (2005)] in the absence of dissipation, exists even in the presence of all the scattering. We further discuss the effects of the terahertz laser fields on the spin relaxation and the steady-state spin polarization. It is found that the terahertz laser fields can {\em strongly} affect the spin relaxation via hot-electron effect and the terahertz-field-induced effective magnetic field in the presence of spin-orbit coupling. The two effects compete with each other, giving rise to {\em non-monotonic} dependence of the spin relaxation time as well as the amplitude of the steady state spin polarization on the terahertz field strength and frequency. The terahertz field dependences of these quantities are investigated for various impurity densities, lattice temperatures, and strengths of the spin-orbit coupling. Finally, the importance of the electron-electron Coulomb scattering on spin kinetics is also addressed.

cond-mat.mtrl-sci↗
arXiv2008

Mean-free path effects in magnetoresistance of ferromagnetic nanocontacts

We investigated the mean-free path effects on the magnetoresistance of ferromagnetic nanocontacts. For most combinations of parameters the magnetoresistance monotonously decreases with increasing the contact cross-section. However, for a certain choice of parameters the calculations show non-monotonous behavior of the magnetoresistance in the region in which the diameter of the contact becomes comparable with the mean-free path of electrons. We attribute this effect to different conduction regimes in the vicinity of the nanocontact: ballistic for electrons of one spin projection, and simultaneously diffusive for the other. Furthermore, at certain combinations of spin asymmetries of the bulk mean-free paths in a heterocontact, the magnetoresistance can be almost constant, or may even grow as the contact diameter increases. Thus, our calculations suggest a way to search for combinations of material parameters, for which high magnetoresistances can be achieved not only at the nanometric size of the contact, but also at much larger cross-sections of nanocontacts which can be easier for fabrication with current technologies. The trial calculations of the magnetoresistance with material parameters close to those for the Mumetal-Ni heterocontacts agree satisfactorily with the available experimental data.

cond-mat.mes-hall↗
arXiv2007

Maximum Likelihood Estimation in Latent Class Models For Contingency Table Data

Statistical models with latent structure have a history going back to the 1950s and have seen widespread use in the social sciences and, more recently, in computational biology and in machine learning. Here we study the basic latent class model proposed originally by the sociologist Paul F. Lazarfeld for categorical variables, and we explain its geometric structure. We draw parallels between the statistical and geometric properties of latent class models and we illustrate geometrically the causes of many problems associated with maximum likelihood estimation and related statistical inference. In particular, we focus on issues of non-identifiability and determination of the model dimension, of maximization of the likelihood function and on the effect of symmetric data. We illustrate these phenomena with a variety of synthetic and real-life tables, of different dimension and complexity. Much of the motivation for this work stems from the "100 Swiss Francs" problem, which we introduce and describe in detail.

stat.ME↗
arXiv2007

Intense terahertz laser fields on a two-dimensional hole gas with Rashba spin-orbit coupling

We investigate the influence on the density of states and the density of spin polarization for a two-dimensional hole gas with Rashba spin-orbit coupling under intense terahertz laser fields. Via Floquet theorem, we solve the time-dependent Schrödinger equation and calculate these densities. It is shown that a terahertz magnetic moment can be induced for low hole concentration. Different from the electron case, the induced magnetic moment is quite anisotropic due to the anisotropic spin-orbit coupling. Both the amplitude and the direction of the magnetic moment depend on the direction of the terahertz field. We further point out that for high hole concentration, the magnetic moment becomes very small due to the interference caused by the momentum dependence of the spin-orbit coupling. This effect also appears in two-dimensional electron systems.

cond-mat.mtrl-sci↗
arXiv2006

Measurement of the Absolute Differential Cross Section for np Elastic Scattering at 194 MeV

A tagged medium-energy neutron beam has been used in a precise measurement of the absolute differential cross section for np back-scattering. The results resolve significant discrepancies within the np database concerning the angular dependence in this regime. The experiment has determined the absolute normalization with 1.5% uncertainty, suitable to verify constraints of supposedly comparable precision that arise from the rest of the database in partial wave analyses. The analysis procedures, especially those associated with evaluation of systematic errors in the experiment, are described in detail so that systematic uncertainties may be included in a reasonable way in subsequent partial wave analysis fits incorporating the present results.

nucl-ex↗
arXiv2005

Bosonic resonating valence bond wave function for doped Mott insulators

We propose a new class of ground states for doped Mott insulators in the electron second-quantization representation. They are obtained from a bosonic resonating valence bond (RVB) theory of the t-J model. At half filling, the ground state describes spin correlations of the S=1/2 Heisenberg model very accurately. Its spin degrees of freedom are characterized by RVB pairing of spins, the size of which decreases continuously as holes are doped into the system. Charge degrees of freedom emerge upon doping and are described by twisted holes in the RVB background. We show that the twisted holes exhibit an off diagonal long range order (ODLRO) in the pseudogap ground state, which has a finite pairing amplitude, but is short of phase coherence. Unpaired spins in such a pseudogap ground state behave as free vortices, preventing superconducting phase coherence. The existence of nodal quasiparticles is also ensured by such a hidden ODLRO in the ground state, which is non-Fermi-liquid-like in the absence of superconducting phase coherence. Two distinct types of spin excitations can also be constructed. The superconducting instability of the pseudogap ground state is discussed and a d-wave superconducting ground state is obtained. This class of pseudogap and superconducting ground states unifies antiferromagnetism, pseudogap, superconductivity, and Mott physics into a new state of matter.

cond-mat.str-el↗