arXiv subjects

Ya-Yu Wang

Publications and source records attributed to Ya-Yu Wang.

4 recordsLinked to original sources

arXiv2021

Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films

We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.

cond-mat.supr-con↗

arXiv2018

Superconductivity in Few-Layer Stanene

A single atomic slice of α-tin-stanene-has been predicted to host quantum spin Hall effect at room temperature, offering an ideal platform to study low-dimensional and topological physics. While recent research has intensively focused on monolayer stanene, the quantum size effect in few-layer stanene could profoundly change material properties, but remains unexplored. By exploring the layer degree of freedom, we unexpectedly discover superconductivity in few-layer stanene down to a bilayer grown on PbTe, while bulk α-tin is not superconductive. Through substrate engineering, we further realize a transition from a single-band to a two-band superconductor with a doubling of the transition temperature. In-situ angle resolved photoemission spectroscopy (ARPES) together with first-principles calculations elucidate the corresponding band structure. Interestingly, the theory also indicates the existence of a topologically nontrivial band. Our experimental findings open up novel strategies for constructing two-dimensional topological superconductors.

cond-mat.mtrl-sci↗

arXiv2010

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

cond-mat.mes-hall↗

arXiv2009

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and ex situ transport measurements reveal that the as-grown Bi2Te3 films without any doping are an intrinsic topological insulator with its Fermi level intersecting only the metallic surface states. Experimentally, we find that the single-Dirac-cone surface state develops at a thickness of two quintuple layers (2 QL). Theoretically, we show that the interaction between the surface states from both sides of the film, which is determined by the penetration depth of the topological surface state wavefunctions, sets this lower thickness limit.

cond-mat.mes-hall↗