arXiv subjects

Yabin Chen

Publications and source records attributed to Yabin Chen.

18 recordsLinked to original sources

arXiv2025

Experimental Demonstration and Transformation Mechanism of Quenchable Two-dimensional Diamond

Two-dimensional (2D) diamond has aroused tremendous interest in nanoelectronics and optoelectronics, owing to its superior properties and flexible characteristics compared to bulk diamond. Despite significant efforts, great challenges lie in the experimental synthesis and transformation conditions of 2D diamond. Herein, we have demonstrated the experimental preparation of high quality 2D diamond with controlled thickness and distinguished properties, realized by laser-heating few-layer graphene in diamond anvil cell. The quenched 2D diamond exhibited narrow T2g Raman peak (linewidth ~3.6 cm-1) and intense photoluminescence of SiV- (linewidth ~6.1 nm) and NV0 centers. In terms of transformation mechanism, atomic structures of hybrid phase interfaces suggested that the intermediate rhombohedral phase subtly mediate hexagonal graphite to cubic diamond transition. Furthermore, the tunable optical bandgap and thermal stability of 2D diamond sensitively depend on its sp3 concentration. We believe our results can shed light on the structural design and preparation of many carbon allotropes and further uncover the underlying transition mechanism.

cond-mat.mtrl-sci↗

arXiv2025

Tentative demonstration of all-silicon photodetector: from near-infrared to mid-infrared

Metastable silicon phases have attracted extensive attention these years, due to their fundamentally distinct photoelectric properties compared to the conventional diamond cubic (I) counterpart. Certain metastable phases, prepared via thermal heating method, can exhibit direct bandgap characteristics, significantly enhancing their light absorbance and quantum efficiency. Herein, we tentatively demonstrate an all-silicon photodetector working from near- to mid-infrared bands through precisely selective laser annealing strategy. We systematically investigated the optical properties and optoelectronic response of III/XII mixture, IV phase, and III/XII-I homojunctions. The obtained results reveal that III/XII composite and IV phase exhibit negative and positive photoconductivity, respectively. Furthermore, the established laser heating approach facilitates us to fabricate all-silicon homostructures with tunable photoconductive properties, such as III/XII-I and IV-I junctions. These findings can expand the potential applications of metastable semiconducting materials in optoelectronics and photodetectors.

cond-mat.mtrl-sci↗

arXiv2025

Tunable Thermal Conductivity and Mechanical Properties of Metastable Silicon by Phase Engineering

The extensive applications of cubic silicon in flexible transistors and infrared detectors are much hindered by its intrinsic properties. Metastable silicon phases, such as Si-III, IV and XII prepared using extreme pressure method, provide a unique "genetic bank" with diverse structures and exotic characteristics, however, exploration on their inherent physical properties remains immature. Herein, we demonstrate the phase engineering strategy to modulate the thermal conductivity and mechanical properties of metastable silicon. The thermal conductivity obtained via Raman optothermal approach presents the broad tunability across various Si-I, III, XII and IV phases. The hardness and Young's modulus of Si-IV are remarkably greater than those of Si-III/XII mixture, confirmed by nanoindentation technique. Moreover, it was found that the pressure-induced structural defects can substantially degrade the thermal and mechanical properties of silicon. This systematic investigation can offer feasible route to design novel semiconductors and further advance their desirable applications in advanced nanodevices and mechanical transducers.

cond-mat.mtrl-sci↗

arXiv2025

Dimension Effect of Nanocarbon Precursors on Diamond Synthesis and Transformation Mechanism under Extreme Conditions

Diamond holds significant promise for a wide range of applications due to its exceptional physicochemical properties. Investigating the controlled diamond preparation from nanocarbon precursors with varying dimensions is crucial to optimize the transition conditions and even elucidate the daunting transformation mechanism, however, this remains outstanding challenge despite considerable effort. Herein, we report the imperative dimension effect of nanocarbon precursors on diamond synthesis and physical mechanism under high temperature and high pressure, by comparing the distinct transition processes of zero-dimensional (0D) carbon nanocages (CNCs) and one-dimensional (1D) carbon nanotubes (CNTs) from conventional graphite. The optical and structural characterizations evidently demonstrated that both 0D CNCs and 1D CNTs first undergo collapse and graphitization, followed by the formation of mixed amorphous carbon with embedded diamond clusters, eventually leading to cubic diamond. The plotted pressure-temperature diagram exhibits the unique dimension effect of carbon nanomaterials to diamond transformation. These results provide valuable insights into the phase transition mechanisms of diamond synthesis and its derivatives under extreme conditions.

cond-mat.mtrl-sci↗

arXiv2024

Interlayer Engineering of Lattice Dynamics and Elastic Constants of 2D Layered Nanomaterials under Pressure

Interlayer coupling in two-dimensional (2D) layered nanomaterials can provide us novel strategies to evoke their superior properties, such as the exotic flat bands and unconventional superconductivity of twisted layers, the formation of moir\'e excitons and related nontrivial topology. However, to accurately quantify interlayer potential and further measure elastic properties of 2D materials remains vague, despite significant efforts. Herein, the layer-dependent lattice dynamics and elastic constants of 2D nanomaterials have been systematically investigated via pressure-engineering strategy based on ultralow frequency Raman spectroscopy. The shearing mode and layer-breathing Raman shifts of MoS2 with various thicknesses were analyzed by the linear chain model. Intriguingly, it was found that the layer-dependent d{\omega}/dP of shearing and breathing Raman modes display the opposite trends, quantitatively consistent with our molecular dynamics simulations and density functional theory calculations. These results can be generalized to other van der Waals systems, and may shed light on the potential applications of 2D materials in nanomechanics and nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2024

Anomalous Raman Response in 2D Magnetic FeTe under Uniaxial Strain: Tetragonal and Hexagonal Polymorphs

Two-dimensional (2D) Fe-chalcogenides have emerged with rich structures, magnetisms and superconductivities, which sparked the growing research interests in the torturous transition mechanism and tunable properties for their potential applications in nanoelectronics. Uniaxial strain can produce a lattice distortion to study symmetry breaking induced exotic properties in 2D magnets. Herein, the anomalous Raman spectrum of 2D tetragonal (t-) and hexagonal (h-) FeTe were systematically investigated via uniaxial strain engineering strategy. We found that both t- and h-FeTe keep the structural stability under different uniaxial tensile or compressive strain up to +/- 0.4%. Intriguingly, the lattice vibrations along both in-plane and out-of-plane directions exceptionally hardened (softened) under tensile (compressive) strain, distinguished from the behaviors of many conventional 2D systems. Furthermore, the difference in thickness-dependent strain effect can be well explained by their structural discrepancy between two polymorphs of FeTe. Our results could provide a unique platform to elaborate the vibrational properties of many novel 2D materials.

cond-mat.mtrl-sci↗

arXiv2023

Structural Modulation and BC8 Enrichment of Silicon via Dynamic Decompression

The modern very large-scale integration systems based on silicon semiconductor are facing the unprecedented challenges especially when transistor feature size lowers further, due to the excruciating tunneling effect and thermal management. Besides the common diamond cubic silicon, numerous exotic silicon allotropes with outstanding properties can emerge under high pressure, such as the metastable BC8 and metallic \b{eta}-tin structures. Despite much effort on the controlled synthesis in experiment and theory, the effective approach to rationally prepare Si phases with desired purity is still lacking and their transition mechanism remains controversial. Herein, we systematically investigated on the complicated structural transformations of Si under extreme conditions, and efficiently enriched BC8-Si phase via dynamic decompression strategy. The splendid purity of BC8-Si was achieved up to ~95%, evidently confirmed by Raman spectroscopy and synchrotron X-ray diffraction. We believe these results can shed a light on the controlled preparation of Si metastable phases and their potential applications in nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2023

Pressure-Modulated Structural and Magnetic Phase Transitions in Two-Dimensional FeTe: Tetragonal and Hexagonal Polymorphs

Two-dimensional (2D) Fe-chalcogenides with rich structures, magnetisms and superconductivities are highly desirable to reveal the torturous transition mechanism and explore their potential applications in spintronics and nanoelectronics. Hydrostatic pressure can effectively stimulate novel phase transitions between various ordered states and to plot the seductive phase diagram. Herein, the structural evolution and transport characteristics of 2D FeTe were systematically investigated under extreme conditions through comparing two distinct symmetries, i.e., tetragonal (t-) and hexagonal (h-) FeTe. We found that 2D t-FeTe presented the pressure-induced transition from antiferromagnetic to ferromagnetic states at ~ 3 GPa, corresponding to the tetragonal collapse of layered structure. Contrarily, ferromagnetic order of 2D h-FeTe was retained up to 15 GPa, evidently confirmed by electrical transport and Raman measurements. Furthermore, the detailed P-T phase diagrams of both 2D t-FeTe and h-FeTe were mapped out with the delicate critical conditions. We believe our results can provide a unique platform to elaborate the extraordinary physical properties of Fe-chalcogenides and further to develop their practical applications.

cond-mat.mtrl-sci↗

arXiv2023

Highly Anisotropic Elastic Properties of Suspended Black Arsenic Nanoribbons

Anisotropy, as an exotic degree of freedom, enables us to discover the emergent two-dimensional (2D) layered nanomaterials with low in-plane symmetry and to explore their outstanding properties and promising applications. 2D black arsenic (b-As) with puckered structure has garnered increasing attention these years owing to its extreme anisotropy with respect to the electrical, thermal, and optical properties. However, the investigation on mechanical properties of 2D b-As is still lacking, despite much effort on theoretical simulations. Herein, we report the highly anisotropic elastic properties of suspended b-As nanoribbons via atomic force microscope-based nanoindentation. It was found that the extracted Young's modulus of b-As nanoribbons exhibits remarkable anisotropy, which approximates to 72.2 +- 5.4 and 44.3 +- 1.4 GPa along zigzag and armchair directions, respectively. The anisotropic ratio reaches up to ~ 1.6. We expect that these results could lay a solid foundation for the potential applications of 2D anisotropic nanomaterials in the next-generation nanomechanics and optoelectronics.

cond-mat.mtrl-sci↗

arXiv2023

Phase-Modulated Elastic Properties of Two-Dimensional Magnetic FeTe: Hexagonal and Tetragonal Polymorphs

Two-dimensional (2D) layered magnets, such as iron chalcogenides, have emerged these years as a new family of unconventional superconductor and provided the key insights to understand the phonon-electron interaction and pairing mechanism. Their mechanical properties are of strategic importance for the potential applications in spintronics and optoelectronics. However, there is still lack of efficient approach to tune the elastic modulus despite the extensive studies. Herein, we report the modulated elastic modulus of 2D magnetic FeTe and its thickness-dependence via phase engineering. The grown 2D FeTe by chemical vapor deposition can present various polymorphs, i.e. tetragonal FeTe (t-FeTe, antiferromagnetic) and hexagonal FeTe (h-FeTe, ferromagnetic). The measured Young's modulus of t-FeTe by nanoindentation method showed an obvious thickness-dependence, from 290.9+-9.2 to 113.0+-8.7 GPa when the thicknesses increased from 13.2 to 42.5 nm, respectively. In comparison, the elastic modulus of h-FeTe remains unchanged. Our results could shed light on the efficient modulation of mechanical properties of 2D magnetic materials and pave the avenues for their practical applications in nanodevices.

cond-mat.mtrl-sci↗

arXiv2023

Experimental observation of highly anisotropic elastic properties of two-dimensional black arsenic

Anisotropic two-dimensional layered materials with low-symmetric lattices have attracted increasing attention due to their unique orientation-dependent mechanical properties. Black arsenic (b-As), with the puckered structure, exhibits extreme in-plane anisotropy in optical, electrical and thermal properties. However, experimental research on mechanical properties of b-As is very rare, although theoretical calculations predicted the exotic elastic properties of b-As, such as anisotropic Young's modulus and negative Poisson's ratio. Herein, experimental observations on highly anisotropic elastic properties of b-As were demonstrated using our developed in situ tensile straining setup based on the effective microelectromechanical system. The cyclic and repeatable load-displacement curves proved that Young's modulus along zigzag direction was ~1.6 times greater than that along armchair direction, while the anisotropic ratio of ultimate strain reached ~2.5, attributed to hinge structure in armchair direction. This study could provide significant insights to design novel anisotropic materials and explore their potential applications in nanomechanics and nanodevices.

cond-mat.mtrl-sci↗

arXiv2023

Intralayer Negative Poisson's Ratio in Two-Dimensional Black Arsenic by Strain Engineering

Negative Poisson's ratio as the anomalous characteristic generally exists in artificial architectures, such as re-entrant and honeycomb structures. The structures with negative Poisson's ratio have attracted intensive attention due to their unique auxetic effect and many promising applications in shear resistant and energy absorption fields. However, experimental observation of negative Poisson's ratio in natural materials barely happened, although various two-dimensional layered materials are predicted in theory. Herein, we report the anisotropic Raman response and the intrinsic intralayer negative Poisson's ratio of two-dimensional natural black arsenic (b-As) via strain engineering strategy. The results were evident by the detailed Raman spectrum of b-As under uniaxial strain together with density functional theory calculations. It is found that b-As was softer along the armchair than zigzag direction. The anisotropic mechanical features and van der Waals interactions play essential roles in strain-dependent Raman shifts and negative Poisson's ratio in the natural b-As along zigzag direction. This work may shed a light on the mechanical properties and potential applications of two-dimensional puckered materials.

cond-mat.mtrl-sci↗

arXiv2023

Thermodynamic Origins of Structural Metastability in Two-Dimensional Black Arsenic

Two-dimensional (2D) materials have aroused considerable research interests owing to their potential applications in nanoelectronics and optoelectronics. Thermodynamic stability of 2D structures inevitably affects the performance and power consumption of the fabricated nanodevices. Black arsenic (b-As), as a cousin of black phosphorus, has presented the extremely high anisotropy in physical properties. However, the systematic research on structural stability of b-As is still lack. Herein, we demonstrated the detailed analysis on structural metastability of the natural b-As, and determined its existence conditions in terms of two essential thermodynamic variables as hydrostatic pressure and temperature. Our results confirmed that b-As can only survive below 0.7 GPa, and then irreversibly transform to gray arsenic, in consistent with our theoretical calculations. Furthermore, thermal annealing strategy was developed to precisely control the thickness of b-As flake, and it sublimates at 300 oC. These results could pave the way for 2D b-As in many promising applications.

cond-mat.mtrl-sci↗

arXiv2020

Chemical trends of deep levels in van der Waals semiconductors

Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400K.

cond-mat.mtrl-sci↗

arXiv2019

Synthesis and electronic structure characterization of diamane

Atomically thin graphite, known as graphene, has been a marvel in material science because of its exceptional properties, novel physics and promising applications. Atomically thin diamond, called diamane, has also attracted considerable scientific interest due to its potential physical and mechanical properties. However, until now there has been no reports of successful synthesis of a free-standing pristine diamane film. Here, we report the synthesis and electronic structure characterization of diamane. Electrical measurements, x-ray diffraction and theoretical simulations reveal that trilayer and thicker graphene transform to hexagonal diamane (h-diamane) when compressed to above 20 GPa, which can be preserved down to few GPa. Raman studies indicate that the sample quenched from high pressure and high temperature also has a h-diamane structure, i.e., h-diamane is recovered back to ambient conditions. Optical absorption and band structure calculations reveal an indirect energy gap of 2.8 eV in the diamane film. Compared to gapless graphene, diamane with sizable bandgap may open up new applications of carbon semiconductors.

cond-mat.mtrl-sci↗

arXiv2018

Black Arsenic: A Layered Semiconductor with Extreme in-plane Anisotropy

Two-dimensional (2D) layered materials emerge in recent years as a new platform to host novel electronic, optical or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between within the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Herein, we report a rare chemical form of arsenic, called black-arsenic (b-As), as an extremely anisotropic layered semiconductor. We have performed systematic characterization on the structural, electronic, thermal and electrical properties of b-As single crystals, with particular focus on its anisotropies along two in-plane principle axes, armchair (AC) and zigzag (ZZ). Our analysis shows that b-As exhibits higher or comparable electronic, thermal and electric transport anisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in-plane anisotropies are able to potentially implement novel ideas for scientific research and device applications.

cond-mat.mtrl-sci↗

arXiv2017

Pressure-Temperature Phase Diagram of Vanadium Dioxide

The complexity of strongly correlated electron physics in vanadium dioxide is exemplified as its rich phase diagrams of all kinds, which in turn shed light on the mechanisms behind its various phase transitions. In this work, we map out the hydrostatic pressure - temperature phase diagram of vanadium dioxide nanobeams by independently varying pressure and temperature with a diamond anvil cell. In addition to the well-known insulating M1 (monoclinic) and metallic R (tetragonal) phases, the diagram identifies the existence at high pressures of the insulating M1' (monoclinic, more conductive than M1) phase, and two metallic phases of X (monoclinic) and O (orthorhombic, at high temperature only). Systematic optical and electrical measurements combined with density functional calculations allow us to delineate their phase boundaries as well as reveal some basic features of the transitions.

cond-mat.mtrl-sci↗

arXiv2016

Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. Herein, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2 can all be significantly enhanced with pressure. We expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.

cond-mat.mtrl-sci↗