arXiv subjects

Yachin Ivry

Publications and source records attributed to Yachin Ivry.

At least 19 recordsLinked to original sources

arXiv2024

Non-Ergodic-Induced Negative Differential Piezoresponse in Relaxor Ferroelectrics

Relaxor ferroelectrics exhibit a unique competition between long-range and short-range interactions that can be tuned electrically which prioritizes these materials in a broad range of electro-mechanical energy-conversion technologies, including biomedical imaging and electric-charge generators. Here, we demonstrate differential negative piezoresponse by utilizing the short-range interactions in relaxor ferroelectrics. The effect was observed over a broad temperature range with local piezoresponse spectroscopy in unpoled samples, while no negative piezoresponse was observed when the material was pre-scan poled. These measurements suggest that the effect, that is promising for power-generation applications, originates from non-ergodic behavior. Complementary macroscale impedance and dielectric constant measurements as a function of temperature and frequency supported the mesoscopic findings. Bearing in mind the direct relationship between piezoresponse and capacitance, relaxor ferroelectrics appear as an excellent platform for the emerging technology of low-power negative-capacitance transistors.

physics.app-ph↗

arXiv2024

Low-power Rapid Planar Superconducting Logic Devices

The rapid-pace growing demand for high-performance computation and big-data manipulation entails substantial increase in global power consumption, and challenging thermal management. Thus, there is a need in allocating competitive alternatives for complementary metal-oxide-semiconductor (CMOS) technologies. Superconducting platforms, such as rapid single flux quantum (RSFQ) lack electric resistance and excel in power efficiency and time performance. However, traditional RSFQs require 3D geometry for their Josephson junctions (JJs) imposing a large footprint, and hence preventing device miniaturization and increasing processing time. Here, we demonstrate that RSFQ logic circuits of planar geometry with weak-link bridges are scalable, relatively easy to process and are CMOS-compatible on a Si chip. Universal logic gates, as well as combinational arithmetic circuiting that are based on these devices are demonstrated. The power consumption and processing time of these logic circuits were as low as 0.8 nW and 13 ps, an order of magnitude improvement with respect to the equivalent traditional-RSFQ logic circuits and two orders of magnitude with respect to CMOS. The competitive performance of planar RSFQ logic circuits renders them for promising CMOS substitutes, especially in the supercomputational realm.

cond-mat.supr-con↗

arXiv2024

Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity

Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of ferroelectricity. First-principle calculations combined with atomic-scale imaging demonstrate that oxygen vacancies that serve as pinning sites for the ferroic domain walls remain immobile above the Curie temperature. Thus, upon cooling to a ferroelectric state, these oxygen vacancies dictate reproducible domain-wall patterning. Domain-scale imaging with variable-temperature piezoresponse force microscopy confirmed the memory effect, questioning the spontaneity of domain distribution under thermotropic transitions.

cond-mat.mtrl-sci↗

arXiv2021

Stiffness and coherence length measurements of ultra-thin superconductor, and implications to layered superconductors

Based on the London equation, we use a rotor-free vector potential ${\bf A}$, and current measurements by a SQUID, to determine the superconducting Pearl length $Λ$, and coherence length $ξ$, of ultra-thin, ring shaped, MoSi films, as a function of thickness $d$ and temperature $T$. We find that $ξ$ is a function of $d$ with a jump at $ξ\sim d \sim 5$nm. At base temperature the superconducting stiffness, defined by $1/λ^2=1/(Λd)$, is an increasing function of $T_c$. Similar behavior, known as the Uemura plot, exist in bulk layered superconductors, but with doping as an implicit parameter. We also provide the critical exponents of $Λ(T)$.

cond-mat.supr-con↗

arXiv2021

Establishing quasi-linear quadrupole functional topology by oxygen-vacancy engineering at a ferroelectric domain wall

Oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to unique conductive, magnetic and even superconductive functionalities they induce. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects that enable unusual symmetries and are relevant for low-energy switching technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of oxygen vacancies has remained elusive. Here, stable individual oxygen vacancies were found and engineered in situ at domain walls of seminal titanate perovskite ferroics. The atomic-scale strain, electric-field, charge and dipole-moment distribution around these vacancies were characterized by combining advanced transmission electron microscopy and first-principle methodologies. 3-5 % tensile strain was observed at the immediate surrounding unit cells of the vacancies. The dipole-moment distribution around the vacancy was found to be an alternating head-to-head $-$ tail-to-tail $-$ head-to-head structure, giving rise to a quasi-linear quadrupole topology. Reduction of the nearby Ti ion as well as enhanced charging and electric-field concentration near the vacancy confirmed the quadrupole structure and illustrated its local effects on the electrical and structural properties. Significant intra-band states were found in the unit cell of the vacancies, proposing a meaningful domain-wall conductivity. Oxygen-vacancy engineering and controllable quadrupoles that enable pre-determining both atomic-scale and global functional properties offer a promising platform of electro-mechanical topological solitons and device miniaturization in metal oxides.

cond-mat.mtrl-sci↗

arXiv2020

Polarization Origin of Photoconductivity in MAPbI3 Thin Films

Hybrid-halide perovskite (HHP) films exhibit exceptional photo-electric properties. These materials are utilized for highly efficient solar cells and photoconductive technologies. Both ion migration and polarization have been proposed as the source of enhanced photoelectric activity, but the exact origin of these advantageous device properties has remained elusive. Here, we combined microscale and device-scale characterization to demonstrate that polarization-assisted conductivity governs photoconductivity in thin HHP films. Conductive atomic force microscopy under light and variable temperature conditions showed that the photocurrent is directional and is suppressed at the tetragonal-to-cubic transformation. It was revealed that polarization-based conductivity is enhanced by light, whereas dark conductivity is dominated by non-directional ion migration, as was confirmed by large-scale device measurements. Following the non-volatile memory nature of polarization domains, photoconductive memristive behavior was demonstrated. Understanding the origin of photoelectric activity in HHP allows designing devices with enhanced functionality and lays the grounds for photoelectric memristive devices.

physics.app-ph↗

arXiv2020

Giant Superelastic Piezoelectricity in Flexible Ferroelectric $BaTiO_3$ Membranes

Mechanical displacement in commonly used piezoelectric materials is typically restricted to linear or biaxial in nature and to a few percent of the material dimensions. Here, we show that free-standing BaTiO$_3$ membranes exhibit non-conventional electromechanical coupling. Under an external electric field, these superelastic membranes undergo controllable and reversible 'sushi-rolling-like' 180$^\circ$ folding-unfolding cycles. This crease-free folding is mediated by charged ferroelectric domains, leading to a giant > 3.8 and 4.6 $μ$m displacements for a 30-nm thick membrane at room temperature and 60$^\circ$C, respectively. Further increasing the electric field above the coercive value changes the fold curvature, hence augmenting the effective piezoresponse. Finally, it is found that the membranes fold with increasing temperature followed by complete immobility of the membrane above the Curie temperature, allowing us to model the ferroelectric-domain origin of the effect.

physics.app-ph↗

arXiv2020

Flexible Amorphous Superconducting Materials and Quantum Devices with Unexpected Tunability

In superconductivity, electrons exhibit unique macroscopic collective quantum behavior that is the key for many modern quantum technologies. This electron behavior stems vastly from coupling to a correlated motion of atoms in the material, as well as from synchronized directional movement that screens external magnetic fields perfectly. Hence, the inter-atomic distance and material geometry are expected to affect fundamental superconductive characteristics. These parameters are tunable with strain, but strain application is hindered by the rigidity of superconductors, which in turn increases at device-relevant temperatures. Here, we present flexible, foldable and transferable superconducting materials, and functional quantum nanostructures by depositing superconductive amorphous-alloy films on a flexible adhesive tape. Specifically, flexible superconducting films, nanowires and quantum interference devices (SQUIDs) were fabricated and characterized under variable magnetic-field, current, temperature and flexure conditions. The SQUID interference periodicity, which represents a single flux quantum, exhibits unexpected tunability with folding curvature. This tunability raises a need for a relook at the fundamentals of superconductivity, mainly with respect to effects of geometry, magnetic-field inhomogeneity and strain. Our work paves the way for novel magnetic devices and quantum-technology platforms with local tunability.

cond-mat.supr-con↗

arXiv2020

Formation and manipulation of domain walls with 2-nm domain periodicity in $BaTiO_3$ without contact electrodes

Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can be moved deterministically with external voltage, while they remain at place after voltage removal, paving the way to novel neuromorphic and low-power data-processing technologies. Ferroic domains arise to release strain, which depends on material thickness, following Kittel scaling law. Hence, a major hurdle is to reduce the device footprint for a given thickness, i.e., to form and move high-density domain walls. Here, we used transmission electron microscopy to produce domain walls with periodicity as high as 2 nm without the use of contact electrodes, while observing their formation and dynamics in situ in $BaTiO_3$. Large-area coverage of the engineered domain walls was demonstrated. The domain-wall density was found to increase with increasing effective stress, until arriving to a saturation value that reflects 150-fold effective stress enhancement. Exceeding this value resulted in strain release by domain-wall rotation. In addition to revealing this multiscale strain-releasing mechanism, we offer a device design that allows controllable switching of domain-walls with 2-nm periodicity, reflecting a potential $144-Tb/inch^2$ neuromorphic network.

cond-mat.mtrl-sci↗

arXiv2019

Surface nucleation of the paraelectric phase in ferroelectric BaTiO3: Atomic scale mapping

In ferroelectricity, atomic-scale dipole moments interact collectively to produce strong electro-mechanical coupling and switchable macroscopic polarization. Hence, the functionality of ferroelectrics emerges at a solid-solid phase transformation that is accompanied by a sudden disappearance of an inversion symmetry. Much effort has been put to understand the ferroelectric transition at the polarization length scale. Nevertheless, the dipole-moment origin of ferroelectricity has remained elusive. Here, we used variable-temperature high-resolution transmission electron microscopy to reveal the dipole-moment dynamics during the ferroelectric-to-paraelectric transition. We show that the transition occurs when paraelectric nuclei of the size of a couple of unit cells emerge near the surface. Upon heating, the cubic phase sidewalk grows towards the bulk. We quantified the nucleation barrier and show dominancy of mechanical interactions, helping us demonstrate similarities to predictions of domain nucleation during electric field switching. Our work motivates dynamic atomic-scale characterizations of solid-solid transitions in other materials.

cond-mat.mtrl-sci↗

arXiv2019

On-Chip Integrable Planar NbN NanoSQUID with Broad Temperature and Magnetic-Field Operation Range

Superconducting quantum interference devices (SQUIDs) are used for applications ranging from sensitive magnetometers to low-temperature electronics and quantum computation. We introduce a planar nano SQUID that was made with a single lithographic step out of NbN films as thin as 3 nm on a Si chip. The fabrication process of weak links that are 45 nm in width, and 165 nm in length, which were designed to account for overcoming current crowding are presented. Operation at a temperature range of 20 mK to 5 K as well as at 1 T parallel, and 10 mT perpendicular magnetic fields is demonstrated, while potential operation higher than 8 T has also been shown. The broad range of applicability of a single device as well as its scalability are promising for on-chip integrability that may open new technological possibilities, including in quantum and electro-optical circuiting.

physics.app-ph↗

arXiv2019

Enhanced Ferroelectric Functionality in Flexible Lead Zirconate Titanate Films with In-Situ Substrate-Clamping Compensation

Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization and strong electro-mechanical coupling, and hence are in widespread use in such technologies, albeit not when flexed. Effects of extrinsic strain on thin ferroelectric films are still unclear, mainly due to the lack of suitable experimental systems that allow cross structural-functional characterization with in-situ straining. Moreover, although the effects of intrinsic strain on ferroelectric films, e.g. due to film-substrate lattice mismatch, have been investigated extensively, it is unclear how these effects are influenced by external strain. Here, we developed a method to strain thin films homogenously in-situ, allowing functional and structural characterization while retaining the sample under constant straining conditions in AFM and XRD. Using this method, we strained the seminal ferroelectric, PbZr0.2Ti0.8O3 that was grown on a flexible mica substrate, to reduce substrate clamping effects and increase the tetragonality. Consequently, we increased the domain stability, decreased the coercive field value and reduced imprint effects. This method allows also direct characterization of the relationship between the lattice parameters and nanoscale properties of other flexible materials.

physics.app-ph↗

arXiv2019

Mesoscopic Origin of Ferroelectric-Ferroelectric Transition in BaTiO3

Ferroelectric materials are the core of common technologies, such as medical ultrasound, mobile-phone antennae and low-power memory devices. The technological interest in ferroelectrics stems from the existence of switchable mesoscale polarization domains. Hence, understanding the origin of ferroelectric functionality requires realization of the domain dynamics during a ferroelectric transformation. However, domain dynamics characterization at the mesoscale is typically too slow with respect to the abrupt ferroic transition. Using scanning probe microscopy with 15-mK thermal-, and deep-submicron spatial-resolution, we realized the domain dynamics during an orthorhombic-to-tetragonal transition in the seminal ferroelectric BaTiO3. We show that the transition comprises four distinguishable mechanisms. The dominant mechanism is a step-by-step progression of a tetragonal-domain wavefront into the orthorhombic phase. This progression is accompanied by ripple-like surface irregularities. Small island domains that remained orthorhombic diffuse then slowly after the wavefront progression. Finally, the resultant tetragonal domains equilibrate by coalescing in a constant-speed. These observations, which are accompanied by quantitative data, bridge between existing macroscopic and microscopic models regarding the nature of ferroelectric transitions, showing the mesoscale origin of ferroelectricity.

cond-mat.mes-hall↗

arXiv2019

Epitaxial TiOx Surface in Ferroelectric BaTiO3: Native Structure and Dynamic Patterning at the Atomic Scale

Surfaces and interfaces of ferroelectric oxides exhibit enhanced functionality, and therefore serve as a platform for novel nano and quantum technologies. Experimental and theoretical challenges associated with examining the subtle electro-chemo-mechanical balance at metal-oxide surfaces have hindered the understanding and control of their structure and behavior. Here, we combine advanced electron-microscopy and first-principles thermodynamics methods to reveal the atomic-scale chemical and crystallographic structure of the surface of the seminal ferroelectric BaTiO3. We show that the surface is composed of a native < 2-nm thick TiOx rock-salt layer in epitaxial registry with the BaTiO3. Using electron-beam irradiation, we successfully patterned artificially TiOx sites with sub-nanometer resolution, by inducing Ba escape. Therefore, our work offers electro-chemo-mechanical insights into ferroelectric surface behavior in addition to a method for scalable high-resolution beam-induced chemical lithography for selectively driving surface phase transitions, and thereby functionalizing metal-oxide surfaces.

cond-mat.mtrl-sci↗

arXiv2018

Superconducting nanowire for single-photon detection: progress, challenges and opportunities

Single-photon detectors and nanoscale superconducting devices are two major candidates for realizing quantum technologies. Superconducting-nanowire single-photon detectors (SNSPDs) comprise these two solid-state and optic aspects enabling high-rate (1.3 GBit s-1) quantum key distribution over long distances (>400 km), long-range (>1200 km) quantum communication as well as space communication (239,000 miles). The attractiveness of SNSPDs stems from competitive performance in the four single-photon relevant characteristics at wavelengths ranges from UV to the mid IR: high detection efficiency, low false-signal rate, low uncertainty in photon time arrival and fast reset time. However, to-date, these characteristics cannot be optimized simultaneously. In this review, we present the mechanisms that govern these four characteristics and demonstrate how they are affected by material properties and device design as well as by the operating conditions, allowing aware optimization of SNSPDs. Based on the evolution in the existing literature and state-of-the-art, we propose how to choose or design the material and device for optimizing SNSPD performance, while we also highlight possible future opportunities in the SNSPD technology.

physics.ins-det↗

arXiv2017

Local tuning of the order parameter in superconducting weak links: A zero-inductance nano device

Controlling both the amplitude and phase of the quantum order parameter (ψ) in nanostructures is important for next-generation information and communication technologies. The long-range coherence of attractive electrons in superconductors render these materials as a nearly ideal platform for such applications. To-date, control over ψ has remained limited to the macroscopic scale, either by adjusting untunable materials properties, such as film thickness, stoichiometry and homogeneity or by tuning external magnetic fields. Yet, although local tuning of ψ is desired, the lack of electric resistance in superconductors, which may be advantageous for some technologies hinders convenient voltage-bias tuning. Likewise, challenges related to nanoscale fabrication of superconductors encumber local tunability of ψ. Here, we demonstrate local tunability of ψ, obtained by patterning with a single lithography step a Nb nano superconducting quantum interference device (nano-SQUID) that is biased at its nano bridges. Our design helped us reveal also unusual electric characteristics-effective zero inductance, which is promising for quantum technologies and nanoscale magnetic sensing. Finally, we accompanied our experimental results by a semi-classical model, which not only is extending the applicability of our devices, but is also useful for describing planar nano-SQUIDs in general.

quant-ph↗

arXiv2017

Superconducting-superconducting hybridization for enhancing single-photon detection

The lack of energy dissipation and abrupt electrical phase transition of superconductors favorite them for nanoscale technologies, including radiation detectors, and quantum technologies. Moreover, understanding the nanoscale behavior of superconductivity is significant for revealing the onset of collective-electron behavior in nature. Nevertheless, the limited number of accessible superconductors restricts availability of the superconducting properties, encumbering the realization of their potential. Superconducting nanowire single photon detectors (SNSPDs) sense single-IR photons faster and more efficient with respect to competing technologies. However, these advantageous properties are material-dependent causing an undesirable speed-efficiency payoff. Usually, SNSPDs based on granular materials are faster, while those based on amorphous materials are more efficient. Here we optimized ultrathin films of granular NbN on SiO2 and of amorphous W5Si3. We showed that hybrid superconducting nanowire single photon detectors (SNSPDs) made of 2-nm-thick W5Si3 films over 2-nm-thick NbN films exhibit advantageous coexistence of timing (< 5-ns reset time and 52-ps timing jitter) and efficiency (> 96% quantum efficiency) performance. We propose that the governing mechanism of this hybridization is the presence of a dual superconducting behavior: native superconductivity of each of the films and superconductivity that is induced from the neighboring film via the proximity effect. In addition to improvement in SNSPDs performance, our results suggest that such hybridization can expand the range of available superconducting properties, impacting nano-superconducting technologies. Lastly, this hybridization may be used to tune the amorphous character of superconducting films and to illuminate the elusive onset of collective-electron behavior near the superconducting-to-insulating transition.

cond-mat.supr-con↗

arXiv2016

Towards Resolving Landauer's Paradox Through Direct Observation of Multiscale Ferroelastic-Ferroelectric Interplay

Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient platform for exploring phase transitions and developing energy-efficient switching devices. However, the fundamental question of how ferroic domains switch, i.e. how the polarization changes from one state to another, is yet to be answered fully. There are contradicting models and a wide body of accumulated data which disagree as to whether the switching requires domain nucleation. Moreover, ferroelectric domains switch under electric fields that are supposedly too weak to form nucleation sites, indicating that the level of disorder seen in real systems plays an important role. This longstanding so-called Landauer's paradox is the ferroelectric equivalent to the absence of raindrop formation in a dust-free vacuum, leading to supersaturated vapors that cannot exist otherwise, e.g. in spinodal decompositions or inhomogeneous nucleation environments. Here we show that polarization switching in ferroelectric-ferroelastic systems comprises domain types that differ by symmetry, lengthscale and switching energy. These domains switch simultaneously thanks to intermediate-range order of organized pinning sites, supporting the previously-unexplained coexistence of nucleation-and-growth and nucleation-frustrated mechanisms. Our treatment is applicable to other Kolmogorov-Avrami systems with multi-scale phase transitions. Finally, we demonstrate augmented electromechanical coupling based on the collective motion of pinning sites, which is promising for nano electro-mechanical and low-power switching devices.

cond-mat.mtrl-sci↗