arXiv subjects

Yakov Matyushkin

Publications and source records attributed to Yakov Matyushkin.

2 recordsLinked to original sources

arXiv2026

Universal reconstructive polarimetry with graphene-metal infrared photodetectors

Recent advent of smart photodetectors, where in-situ tuning of responsivity enables the reconstruction of light intensity, polarization and spectrum by a single device, has revolutionized the field of optoelectronics. So far, most such reconstructive detectors were realized with non-scalable technology of van der Waals stacking. Here, we demonstrate the infrared reconstructive polarimetry with photodetectors based on conventional gated graphene-metal junctions. The reconstruction exploits the gate tuning of polarization contrast, which enables the determination of both infrared power and polarization angle from photovoltage measurements at two different gate voltages. The physics enabling the polarimetry lies in polarization-dependent shift of the electron hot spot near the contact, and the gate tuning of photosensitive barrier width. We further show the universality of polarization reconstruction, i.e. its feasibility with different geometries of the junction, and with graphene of different quality, from boron-nitride encapsulated flakes to the scalable chemical vapor deposited films.

cond-mat.mes-hall↗

arXiv2021

Optimal asymmetry of transistor-based terahertz detectors

Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so far that geometric asymmetry of common FET with respect to source-drain interchange is a strong objective to photovoltage harvesting. Here, we break the traditional scheme and reveal the optimally-asymmetric FET structure providing the maximization of THz responsivity. We fabricate a series of graphene transistors with variable top gate position with respect to mid-channel, and compare their sub-THz responsivities in a wide range of carrier densities. We show that responsivity is maximized for input gate electrode shifted toward the source contact. Theoretical simulations show that for large channel resistance, exceeding the gate impedance, such recipe for responsivity maximisation is universal, and holds for both resistive self-mixing and photo-thermoelectric detection pathways. In the limiting case of small channel resistance, the thermoelectric and self-mixing voltages react differently upon changing the asymmetry, which may serve to disentangle the origin of nonlinearities in novel materials.

cond-mat.mes-hall↗