arXiv subjects

Yan Qian

Publications and source records attributed to Yan Qian.

8 recordsLinked to original sources

arXiv2026

Blind Men and the Elephant: Probing the Epistemic Myopia of LLMs under Long-Tail Divergent Knowledge

Factual question answering (QA) typically assumes a single canonical answer, obscuring whether large language models (LLMs) retain divergent accounts of long-tail facts. To address this gap, we introduce ElephantBench, a closed-book knowledge probe comprising 1,094 questions generated through an auditable graph-based pipeline. The pipeline retrieves related documents from a low-exposure web corpus, identifies naturally occurring disagreements, and converts them into multi-account QA records. Each answer is verified against the originating documents and authoritative public web sources and is then reviewed by human annotators. Across 32 models, even the strongest model recovers both accounts on only 52.4% of questions, while on nearly all remaining questions it recalls one account but omits the other. Scaling model size and inference-time reasoning improve recall but do not eliminate this incompleteness. Corpus analysis further shows that exposure imbalance favors the dominant account, whereas greater minority-side exposure is associated with more complete recall. These findings establish ElephantBench as a reproducible knowledge probe for diagnosing epistemic myopia in parametric memory. More broadly, our graph-based benchmark construction pipeline provides an efficient and scalable way to turn long-tail corpora into source-traceable knowledge probes, supporting efforts to evaluate and advance the epistemic rigour of next-generation LLMs. Code is available at https://github.com/Tencent/ElephantBench.

cs.CL↗

arXiv2021

Application of Quantum Machine Learning using the Quantum Kernel Algorithm on High Energy Physics Analysis at the LHC

Quantum machine learning could possibly become a valuable alternative to classical machine learning for applications in High Energy Physics by offering computational speed-ups. In this study, we employ a support vector machine with a quantum kernel estimator (QSVM-Kernel method) to a recent LHC flagship physics analysis: $t\bar{t}H$ (Higgs boson production in association with a top quark pair). In our quantum simulation study using up to 20 qubits and up to 50000 events, the QSVM-Kernel method performs as well as its classical counterparts in three different platforms from Google Tensorflow Quantum, IBM Quantum and Amazon Braket. Additionally, using 15 qubits and 100 events, the application of the QSVM-Kernel method on the IBM superconducting quantum hardware approaches the performance of a noiseless quantum simulator. Our study confirms that the QSVM-Kernel method can use the large dimensionality of the quantum Hilbert space to replace the classical feature space in realistic physics datasets.

quant-ph↗

arXiv2020

Transition between half-metal and ferromagnetic semiconductor induced by silicon vacancy in epitaxial silicene

Since the inevitability in experimental synthesis, defects show great importance to many materials. They will deeply regulate the properties of the materials, and then affect the further applications. Thus, exploring the effects of defects on the properties of materials is desired. Here, by using first-principles calculations, we systematically studied the effect of silicon vacancy defects on the properties of silicene generated on Nterminated cubic boron nitride (111) surface. It is found that the introduction of silicon vacancy would trigger transition between half-metal and ferromagnetic semiconductor. With small vacancy ratios of 1/36 and 1/24, the ground-state of the samples would behave as ferromagnetic semiconductors, and the band gaps are about 1.25 and 0.95 eV, respectively. When the vacancy ratio is increased up to 1/6, the sample would turn into a ferromagnetic half-metal with a half-metallic gap of around 0.15 eV. The change of the electronic structure of the samples is driven by the different electron transfer between silicon layer and substrate, i.e., there will be different amount of electrons transferred from the silicon layer to the substrate when the vacancy ratio is altered. This work would open a new way to regulate the properties of materials and extend applications in nanoelectronic field.

cond-mat.mtrl-sci↗

arXiv2020

Moderate bandgap and high carrier mobility simultaneously realized in bilayer silicene by oxidation

Semiconductors simultaneously possessing high carrier mobility, moderate bandgap, and ambient environment stability are so important for the modern industry, and Si-based semiconducting materials can match well with the previous silicon based electronic components. Thus, searching for such Si-based semiconductors has been one hot project due to the lack of them nowadays. Here, with the help of density functional theory, we found that the oxidized bilayer silicene exhibits high carrier mobility with a moderate direct bandgap of 1.02 eV. The high carrier mobility is caused by the remaining of big pi bond, and the moderate bandgap is opened by the saturation of dangling Si 3p bonds. Originated from the formation of strong Si-O and Si-Si bonds, the sample exhibits strong thermodynamic and dynamical stabilities. Our work indicates that the oxidized bilayer silicene has many potential applications in modern electronic fields.

cond-mat.mes-hall↗

arXiv2019

Substrate-induced half-metallic property in epitaxial silicene

For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generated on metallic substrates. However, the transfer often leads to wrinkles, damages, contaminations and so on which would destroy the intrinsic properties of samples. Thus, generating two-dimensional materials directly on nonmetallic substrates has been a desirable goal for a long time. Here, via a swarm structure search method and density functional theory, we employed an insulating N-terminated cubic boron nitride(111) surface as a substrate for the generation of silicene. The result shows that the silicene behaves as a ferromagnetic half-metal because of the strong interaction between silicon and surface nitrogen atoms. The magnetic moments are mainly located on surface nitrogen sites without bonding silicon atoms and the value is about 0.12 uB. In spin-up channel, it behaves as a direct band gap semiconductor with a gap of around 1.35 eV, while it exhibits metallic characteristic in spin-down channel, and the half-metallic band gap is about 0.11 eV. Besides, both the magnetic and electronic properties are not sensitive to the external compressive strain. This work maybe open a way for the utility of silicene in spintronic field.

cond-mat.mtrl-sci↗

arXiv2017

Semimetallic single atomic layer silicon allotrope with Dirac fermions

Materials with Dirac point are so amazing since the charge carriers are massless and have an effective speed of light. Among the reported two-dimensional silicon allotropes, no one showing such exciting nature was proved experimentally. This fact motivates us to search for other such two-dimensional silicon allotropes. As a result, a new single atomic layer thin silicon allotrope was predicted by employing CALYPSO code in this work. This silicon allotrope is composed of eight- membered rings linked by Si-Si bonds and presents buckling formation. Expectedly, the electronic calculation reveals that there exists Dirac point at Fermi energy level. Furthermore, the ab initio molecular dynamics simulations displays that the original atomic configuration can be remained even at an extremely high temperature of 1000 K. We hope this work can expand the family of single atomic layer thin silicon allotropes with Dirac fermions.

cond-mat.mtrl-sci↗

arXiv2017

Atomically thin mononitrides SiN and GeN: new two-dimensional semiconducting materials

Low-dimensional Si-based semiconductors are unique materials that can both match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry. Owing to the lack of such materials, many researchers put their efforts into this field. In this work, employing a swarm structure search method and density functional theory, we theoretically predict two-dimensional atomically thin mononitrides SiN and GeN, both of which present semiconducting nature. Furthermore study shows that SiN and GeN behave as indirect band gap semiconductors with the gap of 1.75 and 1.20 eV, respectively. The ab initio molecular dynamics calculation tells that both two mononitrides can exist stably even at extremely high temperature of 2000 K. Notably, electron mobilities are evaluated as 0.888x$10^3$ $cm^2V^{-1}s^{-1}$ and 0.413x$10^3$ $cm^2V^{-1}s^{-1}$ for SiN and GeN, respectively. The present work expands the family of low-dimensional Si-based semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study

Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional silicon-based semiconductors is highly desired. With the combination of a swarm structure search method and density functional theory in this work, a quaternary compound SiBCN with graphene-like structure is found and displays a wide direct band gap as expected. The band gap is of ~2.63 eV which is just between ~2.20 and ~3.39 eV of the highlighted semiconductors SiC and GaN. Notably, the further calculation reveals that SiBCN possesses high carrier mobility with ~5.14x10^3 and ~13.07x10^3 cm^2V^-1s^-1 for electron and hole, respectively. Furthermore, the ab initio molecular dynamics simulations also show that the graphene-like structure of SiBCN can be well kept even at an extremely high temperature of 2000 K. The present work tells that designing ulticomponent silicides may be a practicable way to search for new silicon-based low-dimensional semiconductors which can match well with the previous Si-based substrates.

cond-mat.mes-hall↗