arXiv subjects

Yanfeng Ge

Publications and source records attributed to Yanfeng Ge.

58 records · Page 4Linked to original sources

arXiv2016

A new kind of 2D topological insulators BiCN with a giant gap and its substrate effects

Based on DFT calculation, we predict that BiCN, i.e., bilayer Bi films passivated with -CN group, is a novel 2D Bi-based material with highly thermodynamic stability, and demonstrate that it is also a new kind of 2D TI with a giant SOC gap (? 1 eV) by direct calculation of the topological invariant Z2 and obvious exhibition of the helical edge states. Monolayer h-BN and MoS2 are identified as good candidate substrates for supporting the nontrivial topological insulating phase of the 2D TI films, since the two substrates can stabilize and weakly interact with BiCN via van derWaals interaction and thus hardly affect the electronic properties, especially the band topology. The topological properties are robust against the strain and electric field. This may provide a promising platform for realization of novel topological phases.

cond-mat.mes-hall↗

arXiv2016

Possible Superconductivity Approaching Ice Point

Recently BCS superconductivity at 203 K has been discovery in a highly compressed hydrogen sulfide. We use first-principles calculations to systematically examine the effects of partially substituting the chalcogen atoms on the superconductivity of hydrogen chalcogenides under high pressures. We find detailed trends of how the critical temperature changes with increasing the V-, VI- or VII-substitution rate, which highlight the key roles played by low atomic mass and by strong covalent metallicity. In particular, a possible record high critical temperature of 280 K is predicted in a stable H3S0.925P0.075 with the Im-3m structure under 250 GPa.

cond-mat.supr-con↗

arXiv2014

Effect of modulations of doping and strain on the electron transport in monolayer MoS_2

The doping and strain effects on the electron transport of monolayer MoS_2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm^2/(Vs) in the low doping level under the strain-free condition. The applying a small strain (3%) can improve the maximum mobility to 1150 cm^2/(Vs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transition between K and Q valleys scattered by the M momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the K and Q valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of MoS_2.

cond-mat.mtrl-sci↗

arXiv2013

Phonon-mediated Superconductivity in Silicene

We predict that electron-doped silicene is a good two-dimensional electron-phonon superconductor under biaxial tensile strain by first-principles calculations within rigid band approximation. Superconductivity transition temperature of electron-doped silicene can be increased to be above 10 K by 5% tensile strain. Band structures, phonon dispersive relations, and Eliashberg functions are calculated for detailed analysis. The strong interaction between acoustic phonon modes normal to the silicene plane and the increasing electronic states around the Fermi level induced by tensile strain is mainly responsible for the enhanced critical temperature.

cond-mat.supr-con↗