arXiv subjects

Yanfeng Guo

Publications and source records attributed to Yanfeng Guo.

At least 109 records · Page 6Linked to original sources

arXiv2020

Magnetism-induced topological transition in EuAs3

The nature of the interaction between magnetism and topology in magnetic topological semimetals remains mysterious, but may be expected to lead to a variety of novel physics. We present $ab$ $initio$ band calculations, electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements on the magnetic semimetal EuAs$_3$, demonstrating a magnetism-induced topological transition from a topological nodal-line semimetal in the paramagnetic or the spin-polarized state to a topological massive Dirac metal in the antiferromagnetic (AFM) ground state at low temperature, featuring a pair of massive Dirac points, inverted bands and topological surface states on the (010) surface. Shubnikov-de Haas (SdH) oscillations in the AFM state identify nonzero Berry phase and a negative longitudinal magnetoresistance ($n$-LMR) induced by the chiral anomaly, confirming the topological nature predicted by band calculations. When magnetic moments are fully polarized by an external magnetic field, an unsaturated and extremely large magnetoresistance (XMR) of $\sim$ 2$\times10^5$ % at 1.8 K and 28.3 T is observed, likely arising from topological protection. Consistent with band calculations for the spin-polarized state, four new bands in quantum oscillations different from those in the AFM state are discerned, of which two are topologically protected. Nodal-line structures at the $Y$ point in the Brillouin zone (BZ) are proposed in both the spin-polarized and paramagnetic states, and the latter is proven by ARPES. Moreover, a temperature-induced Lifshitz transition accompanied by the emergence of a new band below 3 K is revealed. These results indicate that magnetic EuAs$_3$ provides a rich platform to explore exotic physics arising from the interaction of magnetism with topology.

cond-mat.mtrl-sci↗

arXiv2020

Non-Coulomb strong electron-hole binding in $Ta_2NiSe_5$ revealed by time- and angle-resolved photoemission spectroscopy

We reveal an ultrafast purely electronic phase transition in \TNS, which is a plausible excitonic insulator, after excited by an ultrafast infrared laser pulse. Specifically, the order parameter of the strong electron-hole binding shrinks with enhancing the pump pulse, and above a critical pump fluence, a photo-excited semimetallic state is experimentally identified with the absence of ultrafast structural transition. In addition, the bare valence and conduction bands and also the effective exciton binding energy in \TNS~are determined. These findings and detailed analysis suggest a bare nonequilibrium semimetallic phase in $Ta_2NiSe_5$ and the strong electron-hole binding cannot be exclusively driven by Coulomb interaction.

cond-mat.str-el↗

arXiv2020

Electronic structure of a Si-containing topological Dirac semimetal CaAl2Si2

There has been an upsurge in the discovery of topological quantum materials, where various topological insulators and semimetals have been theoretically predicted and experimentally observed. However, only very few of them contains silicon, the most widely used element in electronic industry. Recently, ternary compound CaAl2Si2 has been predicted to be a topological Dirac semimetal, hosting Lorentz-symmetry-violating quasiparticles with a strongly tilted conical band dispersion. In this work, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we investigated the comprehensive electronic structure of CaAl2Si2. A pair of topological Dirac crossings is observed along the kz direction, in good agreement with the ab initio calculations, confirming the topological Dirac semimetal nature of the compound. Our study expands the topological material family on Si-containing compounds, which have great application potential in realizing low-cost, nontoxic electronic device with topological quantum states.

cond-mat.mtrl-sci↗

arXiv2020

Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se

Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures, and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials.

cond-mat.mtrl-sci↗

arXiv2020

Terahertz emission in the van der Waals magnet CrSiTe3

The van der Waals magnet CrSiTe3 (CST) has captured immense interest because it is capable of retaining the long-range ferromagnetic order even in its monolayer form, thus offering potential use in spintronic devices. Bulk CST crystal has inversion symmetry that is broken on the crystal surface. Here, by employing ultrafast terahertz (THz) emission spectroscopy and time resolved THz spectroscopy, the THz emission of the CST crystal was investigated, which shows a strong THz emission from the crystal surface under femtosecond (fs) pulse excitation at 800 nm. Theoretical analysis based on space symmetry of CST suggests the dominant role of shift current occurring on the surface with a thickness of a few quintuple layers in producing the THz emission, in consistence with the experimental observation that the emitted THz amplitude strongly depends on the azimuthal and pumping polarization angles. The present study offers a new efficient THz emitter as well as a better understanding of the nonlinear optical response of CST. It hopefully will open a window toward the investigation on the nonlinear optical response in the mono-/few-layer van der Waals crystals with low-dimensional magnetism.

physics.optics↗

arXiv2020

Magnetic critical behavior of the van der Waals Fe5GeTe2 crystal with near room temperature ferromagnetism

The van der Waals ferromagnet Fe5GeTe2 has a Curie temperature TC of about 270 K, which can be raised above room temperature by tuning the Fe deficiency content. To achieve insights into its ferromagnetic exchange, we have studied the critical behavior by measuring the magnetization in bulk Fe5GeTe2 crystal around the ferromagnetic to paramagnetic phase transition. The analysis of the magnetization by employing various techniques including the modified Arrott plot, Kouvel-Fisher plot and critical isotherm analysis achieved a set of reliable critical exponents with TC = 273.7 K, beta = 0.3457, gamma = 1.40617, and delta = 5.021, suggesting a three-dimensional magnetic exchange with the distance decaying as J(r) ~ (r)$^-4.916, which is close to that of a three-dimensional Heisenberg model with long-range magnetic coupling.

cond-mat.str-el↗

arXiv2020

The de Hass-van Alphen quantum oscillations in BaSn3 superconductor with multiple Dirac fermions

By measuring the de Hass-van Alphen effect and calculating the electronic band structure, we have investigated the bulk Fermi surface of the BaSn3 superconductor with a transition temperature of ~ 4.4 K. Striking de Haas-van Alphen (dHvA) quantum oscillations are observed when the magnetic field B is perpendicular to both (100) and (001) planes. Our analysis unveiled nontrivial Berry phase imposed in the quantum oscillations when B is perpendicular to (100), with two fundamental frequencies at 31.5 T and 306.7 T, which likely arise from two corresponding hole pockets of the bands forming a type-II Dirac point. The results are supported by the ab initio calculations indicating a type-II Dirac point setting and tilting along the high symmetric K-H line of the Brillouin zone, about 0.13 eV above the Fermi level. Moreover, the calculations also revealed other two type-I Dirac points on the high symmetric Γ-A direction, but slightly far below the Fermi level. The results demonstrate BaSn3 as an excellent platform for the study of not only exotic properties of different types of Dirac fermions in a single material, but also the interplay between nontrivial topological states and superconductivity.

cond-mat.str-el↗

arXiv2020

The de Hass-van Alphen quantum oscillations in a three-dimensional Dirac semimetal TiSb2

We have used the de Hass-van Alphen (dHvA) effect to investigate the Fermi surface of high-quality crystalline TiSb2, which unveiled a nontrivial topologic nature by analyzing the dHvA quantum oscillations. Moreover, our analysis on the quantum oscillation frequencies associated with nonzero Berry phase when the magnetic field is parallel to both of the ab-plane and c-axis of TiSb2 finds that the Fermi surface topology has a three-dimensional (3D) feature. The results are supported by the first-principle calculations which revealed a symmetry-protected Dirac point appeared along the Γ-Z high symmetry line near the Fermi level. On the (001) surface, the bulk Dirac points are found to project onto the -Γ point with nontrivial surface states. Our finding will substantially enrich the family of 3D Dirac semimetals which are useful for topological applications.

cond-mat.str-el↗

arXiv2019

Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6

The discovery of intrinsic magnetism in atomically thin two-dimensional transition-metal trichalcogenides has attracted intense research interest due to the exotic properties of magnetism and potential applications in devices. Pressure has proven to be an effective tool to manipulate the crystal and electronic structures of the materials. Here, we report investigations on ferromagnetic van der Waals Cr2Si2Te6 via high-pressure synchrotron x-ray diffraction, electrical resistance, Hall resistance, and magnetoresistance measurements. Under compression, Cr2Si2Te6 simultaneously undergoes a structural transition, emergence of superconductivity at 3 K, sign change of the magnetoresistance, and dramatic change of the Hall coefficient at ~8 GPa. The superconductivity persists up to the highest measured pressure of 47.1 GPa with a maximum Tc = 4.5 K at ~30 GPa. The discovery of superconductivity in the two-dimensional van der Waals ferromagnetic Cr-based Cr2Si2Te6 provides new perspectives to explore superconductivity and the interplay between superconductivity and magnetism.

cond-mat.supr-con↗

arXiv2019

Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological insulator state

High magnetic field transport measurements and ab initio calculations on the layered superconductor TaSe3 have provided compelling evidences for the existence of a three-dimensional strong topological insulator state. Longitudinal magnetotransport measurements up to ~ 33 T unveiled striking Shubnikov-de Hass oscillations with two fundamental frequencies at 100 T and 175 T corresponding to a nontrivial electron Fermi pocket at the B point and a nontrivial hole Fermi pocket at the Γ point respectively in the Brillouin zone. However, calculations revealed one more electron pocket at the B point, which was not detected by the magnetotransport measurements, presumably due to the limited carrier momentum relaxation time. Angle dependent quantum oscillations by rotating the sample with respect to the magnetic field revealed clear changes in the two fundamental frequencies, indicating anisotropic electronic Fermi pockets. The ab initio calculations gave the topological Z2 invariants of (1; 100) and revealed a single Dirac cone on the (1 0 -1) surface at the X point with helical spin texture at a constant-energy contour, suggesting a strong topological insulator state. The results demonstrate TaSe3 an excellent platform to study the interplay between topological phase and superconductivity and a promising system for the exploration of topological superconductivity.

cond-mat.supr-con↗

arXiv2019

Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states

Combination of different nontrivial topological states in a single material is capable of realizing multiple functionalities and exotic physics, but such materials are still very sparse. We report herein the results of magnetotransport measurements and ab initio calculations on single crystalline CaAl2Si2 semimetal. The transport properties could be well understood in connection with the two-band model, agreeing well with the theoretical calculations indicating four main sheets of Fermi surface consisting of three hole pockets centered at the Γ point and one electron pocket centered at the M point in the Brillouin zone. The single fundamental frequency imposed in the quantum oscillations of magnetoresistance corresponds to the electron Fermi pocket. Without spin-orbit coupling (SOC), the ab initio calculations suggest CaAl2Si2 as a system hosting a topological nodal-line setting around the Γ point in the Brillouin zone close to the Fermi level. Once including the SOC, the fragile nodal-line will be gapped and a pair of Dirac points emerge along the high symmetric Γ-A direction, which is about 1.22 eV below the Fermi level. The SOC can also induce a topological insulator state along the Γ-A direction with a gap of about 3 meV. The results demonstrate CaAl2Si2 as an excellent platform for the study of novel topological physics with multiple topological states.

cond-mat.str-el↗

arXiv2019

Angle-resolved photoemission spectroscopy study of crystal electric field in heavy fermion compound CePt2In7

The three-dimensional electronic structure and Ce 4f electrons of the heavy fermion superconductor CePt2In7 is investigated. Angle-resolved photoemission spectroscopy using variable photon energy establishes the existence of quasi-two and three dimensional Fermi surface topologies. Temperature-dependent 4d-4f on-resonance photoemission spectroscopies reveal that heavy quasiparticle bands begin to form at a temperature well above the characteristic (coherence) temperature T*. T* emergence may be closely related to crystal electric field splitting, particularly the low-lying heavy band formed by crystal electric field splitting.

cond-mat.str-el↗

arXiv2019

Nb$_{2}$SiTe$_{4}$: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response

Two-dimensional (2D) materials with narrow band gaps (~0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detection. However, most of the 2D materials studied so far have band gaps that are too large. A few of them with suitable band gaps are not stable under ambient conditions. In this study, the layered Nb$_{2}$SiTe$_{4}$ is shown to be a stable 2D material with a band gap of 0.39 eV. Field-effect transistors based on few-layer Nb$_2$SiTe$_4$ show ambipolar transport with similar magnitude of electron and hole current and high charge-carrier mobility of ~ 100 cm$^{2}$V$^{-1}$s$^{-1}$ at room temperature. Optoelectronic measurements of the devices show clear response to MIR wavelength of 3.1 $\mathrmμ$m with a high responsivity of ~ 0.66 AW$^{-1}$. These results establish Nb$_{2}$SiTe$_{4}$ as a good candidate for ambipolar devices and MIR detection.

physics.app-ph↗

arXiv2019

Magnetic structure and excitations of the topological semimetal YbMnBi$_2$

We investigated the magnetic structure and dynamics of YbMnBi$_2$, with elastic and inelastic neutron scattering, to shed light on the topological nature of the charge carriers in the antiferromagnetic phase. We confirm C-type antiferromagnetic ordering of the Mn spins below $T_{\rm N} = 290$ K, and determine that the spins point along the $c$-axis to within about $3^\circ$. The observed magnon spectrum can be described very well by the same effective spin Hamiltonian as was used previously to model the magnon spectrum of CaMnBi$_2$. Our results show conclusively that the creation of Weyl nodes in YbMnBi$_2$ by the time-reversal-symmetry breaking mechanism can be excluded in the bulk.

cond-mat.str-el↗

arXiv2019

Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa

The extremely large magnetoresistance (XMR) in nonmagnetic semimetals has inspired growing interest owing to both intriguing physics and potential applications. We report results of synchrotron X-ray diffraction (SXRD) and electrical transport measurements on TaAs2 under pressure up to ~ 37 GPa, which revealed an anisotropic compression of the unit cell, formation of unusual As-As bonds above 9.5 GPa, and enhancement of metallicity. Interestingly, the MR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at 36.6 GPa is still 36.7%. The almost robust MR under pressure could be related to the nearly stable electronic structure unveiled by the ab initio calculations. The discovery would expand the potential use of XMR even under high pressure.

cond-mat.mtrl-sci↗

arXiv2019

Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6

Layered transition-metal trichalcogenides have become one of the research frontiers as two-dimensional magnets and candidate materials used for phase-change memory devices. Herein we report the high-pressure synchrotron X-ray diffraction and resistivity measurements on Cr2Ge2Te6 (CGT) single crystal by using diamond anvil cell techniques, which reveal a mixture of crystalline-to-crystalline and crystalline-to-amorphous transitions taking place concurrently at 18.3-29.2 GPa. The polymorphic transition could be interpreted by atomic layer reconstruction and the amorphization could be understood in connection with randomly flipping atoms into van der Waals gaps. The amorphous (AM) phase is quenchable to ambient conditions. The electrical resistance of CGT shows a bouncing point at ~ 18 GPa, consistent with the polymorphism phase transition. Interestingly, the high-pressure AM phase exhibits metallic resistance with the magnitude comparable to that of high-pressure crystalline phases, whereas the resistance of the AM phase at ambient pressure fails to exceed that of the crystalline phase, indicating that the AM phase of CGT appeared under high pressure is quite unique and similar behavior has never been observed in other phase-change materials. The results definitely would have significant implications for the design of new functional materials.

cond-mat.str-el↗

arXiv2019

Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2

We report systematic magneto-transport measurements and ab initio calculations on single-crystalline TaP2, a new member of the transition-metal dipnictides. We observed unsaturated magnetoresistance (MR) reaching ~ 700% at a magnetic field (B) of 9 T at 2 K along with striking Shubnikov-de Hass (SdH) oscillations. Our analysis on the SdH oscillations reveals nonzero Berry phase, indicating nontrivial band topology. The analysis also uncovers three fundamental magnetic oscillation frequencies of 72 T, 237 T, and 356 T, consistent with the theoretical calculations which reveal one hole pocket and two electron pockets at the L point and one electron pocket at the Z point of the Brillouin zone. We also found negative longitudinal MR (n-MR) within a narrow window of the angles between B and the electric current (I). The n-MR could be fitted with the Adler-Bell-Jackiw chiral anomaly equation but the origin remains yet ambiguous. The ab inito calculations suggest TaP2 as a weak topological insulator with the Z2 indices of (0; 111), which exhibits topological surface states on the (001) surface.

cond-mat.str-el↗

arXiv2019

Magnetic exchange induced Weyl state in a semimetal EuCd2Sb2

Magnetic Weyl semimetals (WSMs) bearing long-time pursuing are still very rare. We herein identified magnetic exchange induced Weyl state in EuCd2Sb2, a semimetal in type IV magnetic space group, via performing high magnetic field (B) magneto-transport measurements and ab initio calculations. For the A-type antiferromagnetic (AFM) structure of EuCd2Sb2, external B larger than 3.2 T can align Eu spins to be fully polarized along the c-axis and consequently drive the system into a ferromagnetic (FM) state. Measurements up to B ~ 55 T revealed a striking Shubnikov-de Hass oscillation imposed by a nontrivial Berry phase. We unveiled a phase transition from a small-gap AFM topological insulator into a FM WSM in which Weyl points emerged along the Γ-Z path. Fermi arcs on (100) and (010) surfaces are also revealed. The results pave a way towards realization of various topological states in a single material through magnetic exchange manipulation.

cond-mat.str-el↗