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Yanglin Zhu

Publications and source records attributed to Yanglin Zhu.

30 records · Page 2Linked to original sources

Subtle metastability of the layered magnetic topological insulator MnBi2Te4 from weak interactions

The metastable layered compound MnBi2Te4 is the first experimentally realized intrinsic antiferromagnetic topological insulator, predicted to host the quantum anomalous Hall effect at high temperatures upon exfoliation to atomically thin layers. While its magnetic ordering and topological properties have generated intensive interest, the mechanism behind its metastability and the ideal crystal synthesis conditions have remained elusive. Here, using a combined first-principles-based approach that considers lattice, charge, and spin degrees of freedom, we investigate the metastability of MnBi2Te4 by calculating the Helmholtz free energy for the reaction Bi2Te3 + MnTe -> MnBi2Te4. We identify a narrow temperature range (767 K to 873 K) in which the compound is stable with respect to the competing binary phases and successfully synthesize high-quality MnBi2Te4 single crystals using the Bi-Te flux method within this range. We also predict the various contributions to the total specific heat, which is consistent with our experimental measurements. Our findings indicate that the degrees of freedom responsible for the van der Waals interaction, magnetic coupling, and nontrivial band topology in layered materials not only enable emergent phenomena but also determine thermodynamic stability. This conclusion lays the foundation for future computational material synthesis of novel layered systems.

cond-mat.mtrl-sci↗

Ferromagnetic van der Waals compound MnSb$_{1.8}$Bi$_{0.2}$Te$_4$

The intersection of topology and magnetism represents a new playground to discover novel quantum phenomena and device concepts. In this work, we show that a van der Waals compound MnSb$_{1.8}$Bi$_{0.2}$Te$_4$ exhibits a ferromagnetic ground state with a Curie temperature of 26 K, in contrast to the antiferromagnetic order previously found for other members of the Mn(Sb, Bi)$_2$Te$_4$ family. We employ magneto-transport, bulk magnetization and neutron scattering studies to illustrate the magnetic and electrical properties of MnSb$_{1.8}$Bi$_{0.2}$Te$_4$ and report on the observation of an unusual anomalous Hall effect. Our results are an important step in the synthesis and understanding of ferromagnetic topological insulators.

cond-mat.mes-hall↗

Giant room temperature anomalous Hall effect and magnetically tuned topology in the ferromagnetic Weyl semimetal Co2MnAl

Weyl semimetals (WSM) have been extensively studied due to their exotic properties such as topological surface states and anomalous transport phenomena. Their band structure topology is usually predetermined by material parameters and can hardly be manipulated once the material is formed. Their unique transport properties appear usually at very low temperature, which sets challenges for practical device applications. In this work, we demonstrate a way to modify the band topology via a weak magnetic field in a ferromagnetic topological semimetal, Co2MnAl, at room temperature. We observe a tunable, giant anomalous Hall effect, which is induced by the transition between Weyl points and nodal rings as rotating the magnetization axis. The anomalous Hall conductivity is as large as that of a 3D quantum anomalous Hall effect (QAHE), with the Hall angle reaching a record value (21%) at the room temperature among magnetic conductors. Furthermore, we propose a material recipe to generate the giant anomalous Hall effect by gaping nodal rings without requiring the existence of Weyl points. Our work reveals an ideal intrinsically magnetic platform to explore the interplay between magnetic dynamics and topological physics for the development of a new generation of spintronic devices.

cond-mat.mtrl-sci↗

Transport evidence of triply degenerate nodal semimetal YRh6Ge4

We have investigated magnetotransport properties of YRh6Ge4, which was recently predicted to be a triply degenerate nodal semimetal. We find it exhibits remarkable signatures of a chiral anomaly, manifested by large negative longitudinal magnetoresistance, quadratic field dependence of magnetoconductance and planar Hall effect. Furthermore, we have also observed Shubnikov-de Haas (SdH) quantum oscillations in the magnetoresistivity measurements on this material. The analyses of the SdH data reveal two point-like Fermi surfaces and these pockets are found to host nearly massless fermions. The small size of these Fermi pockets is in a good agreement with the theoretical prediction that the triply degenerate point in YRh6Ge4 is much closer to the Fermi level than previously demonstrated triply degenerate nodal semimetals such as MoP and WC. These results suggest YRh6Ge4 may serve as a model system to probe exotic properties of three-component fermions and understand their underlying physics.

physics.app-ph↗

Quasi-2D magnetism and origin of the Dirac semimetallic behavior in nonstoichiometric Sr$_{1-y}$Mn$_{1-z}$Sb$_{2}$ (y, z~$<$0.1)

Nonstoichiometric Sr$_{1-y}$Mn$_{1-z}$Sb$_{2}$ (y, z~$<$0.1) is known to exhibit a coexistence of magnetic order and the nontrivial semimetallic behavior related to Dirac or Weyl fermions. Here, we report inelastic neutron scattering analyses of the spin dynamics and density functional theory studies on the electronic properties of Sr$_{1-y}$Mn$_{1-z}$Sb$_{2}$. We observe a relatively large spin excitation gap $\approx$ 8.5 meV at 5 K, and the interlayer magnetic exchange constant only 2.8 \% of the dominant intralayer magnetic interaction, providing evidence that Sr$_{1-y}$Mn$_{1-z}$Sb$_{2}$ exhibits a quasi-2D magnetism. Using density functional theory, we find a strong influence of magnetic orders on the electronic band structure and the Dirac dispersions near the Fermi level along the Y-S direction in the presence of a ferromagnetic ordering. Our study unveils novel interplay between the magnetic order, magnetic transition, and electronic property in Sr$_{1-y}$Mn$_{1-z}$Sb$_{2}$, and opens new pathways to control the relativistic band structure through magnetism in ternary compounds.

cond-mat.str-el↗

Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$

$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We performed comprehensive studies on the structure, nontrivial surface state and magnetotransport properties of this material. Our results reveal an intrinsic anomalous Hall effect arising from a non-collinear spin structure for the magnetic field parallel to the $c$-axis. We also observed remarkable negative magnetoresistance under arbitrary field orientation below and above the Neel temperature (T$_N$), providing clear evidence for strong spin fluctuation-driven spin scattering in both the AFM and paramagnetic states. Further, we found that the nontrivial surface state opens a large gap (~85 meV) even at temperatures far above T$_N$ = 25K. These findings demonstrate that the bulk band structure of $\mathrm{MnBi_2Te_4}$ is strongly coupled to the magnetic structure and that a net Berry curvature in momentum space can be created in a canted AFM state. In addition, our results imply that the gap opening in the surface states is intrinsic, likely caused by the strong spin fluctuations near the surface layers.

cond-mat.mtrl-sci↗

Evidence for unconventional superconductivity in Half-Heusler YPdBi and TbPdBi compounds revealed by London penetration depth measurements

The half-Heusler compounds YPdBi and TbPdBi, while having similar band structure, exhibit different magnetic properties. YPdBi is a diamagnet, while TbPdBi shows antiferromagnetic order below 5.5 K. Both are superconductors with T${_c}\approx$1 K for YPdBi and T${_c}\approx$1.75 K for TbPdBi. Such a contrast in properties between these two compounds opens a question about the effects of band structure or magnetic correlations on superconductivity. Using the combination of a tunnel diode oscillator (TDO) and a commercial dilution refrigerator, we measured temperature dependent magnetic penetration depth $Δλ(T)$ in single crystals of YPdBi and TbPdBi, down to temperatures as low as 0.1K. We found that penetration depths of both compounds do not show exponential temperature dependence and saturation at low temperatures, as expected for conventional BCS superconductors. Instead, in both compounds, the penetration depth can be described by a power law $Δλ(T) = A\times T^{n}$. The coefficient A was found to be about 50$\%$ smaller in TbPdBi, but the exponents are very similar, $n = 2.76\pm 0.04$ in YPdBi and $n = 2.6\pm 0.3$ in TbPdBi, respectively. Our results suggest unconventional superconductivity in both YPdBi and TbPdBi.

cond-mat.supr-con↗

Raman Spectroscopy, Photocatalytic Degradation and Stabilization of Atomically Thin Chromium Triiodide

As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium triiodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challenging, due to its extreme instability under ambient conditions. Here we present Raman characterization of CrI3, and demonstrate that the main degradation pathway of CrI3 is the photocatalytic substitution of iodine by water. While simple encapsulation by Al2O3, PMMA and hexagonal BN (hBN) only leads to modest reduction in degradation rate, minimizing exposure of light markedly improves stability, and CrI3 sheets sandwiched between hBN layers are air-stable for >10 days. By monitoring the transfer characteristics of CrI3/graphene heterostructure over the course of degradation, we show that the aquachromium solution hole-dopes graphene.

cond-mat.mes-hall↗

Quantum oscillation evidence of topological semimetal phase in ZrSnTe

The layered WHM - type (W=Zr/Hf/La, H=Si/Ge/Sn/Sb, M=S/Se/Te) materials represent a large family of topological semimetals, which provides an excellent platform to study the evolution of topological semimetal state with the fine tuning of spin-orbit coupling and structural dimensionality for various combinations of W, H and M elements. In this work, through high field de Haas-van Alphen (dHvA) quantum oscillation studies, we have found evidence for the predicted topological non-trivial bands in ZrSnTe. Furthermore, from the angular dependence of quantum oscillation frequency, we have revealed the three-dimensional Fermi surface topologies of this layered material owing to strong interlayer coupling.

cond-mat.mtrl-sci↗

Nearly massless Dirac fermions and strong Zeeman splitting in the nodal-line semimetal ZrSiS probed by de Haas--van Alphen quantum oscillations

Topological semimetals represent a new class of quantum materials hosting Dirac/Weyl fermions. The essential properties of topological fermions can be revealed by quantum oscillations. Here we present the first systematic de Haas-van Alphen (dHvA) oscillation studies on the recently discovered topological Dirac nodal-line semimetal ZrSiS. From the angular dependence of dHvA oscillations, we have revealed the anisotropic Dirac bands in ZrSiS and found surprisingly strong Zeeman splitting at low magnetic fields. The Landé g-factor estimated from the separation of Zeeman splitting peaks is as large as 38. From the analyses of dHvA oscillations, we also revealed nearly zero effective mass and exceptionally high quantum mobility for Dirac fermions in ZrSiS. These results shed light on the nature of novel Dirac fermion physics of ZrSiS.

cond-mat.mtrl-sci↗

Nearly massless Dirac fermions hosted by Sb square net in BaMnSb2

Layered compounds AMnBi2 (A=Ca, Sr, Ba, or rare earth element) have been established as Dirac materials. Dirac electrons generated by the two-dimensional (2D) Bi square net in these materials are normally massive due to the presence of a spin-orbital coupling (SOC) induced gap at Dirac nodes. Here we report that the Sb square net in an isostructural compound BaMnSb2 can host nearly massless Dirac fermions. We observed strong Shubnikov-de Haas (SdH) oscillations in this material. From the analyses of the SdH oscillations, we find key signatures of Dirac fermions, including light effective mass (~0.052m0; m0, mass of free electron), high quantum mobility (1280 cm2V-1S-1) and a Pi Berry phase accumulated along cyclotron orbit. Compared with AMnBi2, BaMnSb2 also exhibits much more significant quasi two-dimensional (2D) electronic structure, with the out-of-plane transport showing nonmetallic conduction below 120K and the ratio of the out-of-plane and in-plane resistivity reaching ~670. Additionally, BaMnSb2 also exhibits an antiferromagnetic order with a weak ferromagnetic component. The combination of nearly massless Dirac fermions on quasi-2D planes with a magnetic order makes BaMnSb2 an intriguing platform for seeking novel exotic phenomena of massless Dirac electrons.

cond-mat.mtrl-sci↗

Topological nodal-line fermions in ZrSiSe and ZrSiTe

The discovery of topological semimetal phase in three-dimensional (3D) systems is a new breakthrough in topological material research. Dirac nodal-line semimetal is one of the three topological semimetal phases discovered so far; it is characterized by linear band crossing along a line/loop, contrasted with the linear band crossing at discrete momentum points in 3D Dirac and Weyl semimetals. The study of nodal-line semimetal is still at initial stage; only three material systems have been verified to host nodal line fermions until now, including PbTaSe2, PtSn 4and ZrSiS. In this letter, we report evidence of nodal line fermions in ZrSiSe and ZrSiTe probed in de Haas - van Alphen (dHvA) quantum oscillations. Although ZrSiSe and ZrSiTe share similar layered structure with ZrSiS, our measurements of angular dependences of dHvA oscillations indicate the Fermi surface (FS) enclosing Dirac nodal line is of 2D character in ZiSiTe, in contrast with 3D-like FS in ZrSiSe and ZrSiS. Another important property revealed in our experiment is that the nodal line fermion density in ZrSi(S/Se) (~ 10^20-10^21 cm^-3) is much higher than the Dirac/Weyl fermion density of any known topological materials. In addition, we have demonstrated ZrSiSe and ZrSiTe single crystals can be thinned down to 2D atomic thin layers through microexfoliation, which offers a promising platform to verify the predicted 2D topological insulator in the monolayer materials with ZrSiS-type structure

cond-mat.mtrl-sci↗