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Yanhao Dong

Publications and source records attributed to Yanhao Dong.

18 recordsLinked to original sources

Accelerating LLM Inference Throughput via Asynchronous KV Cache Prefetching

Large Language Models (LLMs) exhibit pronounced memory-bound characteristics during inference due to High Bandwidth Memory (HBM) bandwidth constraints. In this paper, we propose an L2 Cache-oriented asynchronous KV Cache prefetching method to break through the memory bandwidth bottleneck in LLM inference through computation-load overlap. By strategically scheduling idle memory bandwidth during active computation windows, our method proactively prefetches required KV Cache into GPU L2 cache, enabling high-speed L2 cache hits for subsequent accesses and effectively hiding HBM access latency within computational cycles. Extensive experiments on NVIDIA H20 GPUs demonstrate that the proposed method achieves 2.15x improvement in attention kernel efficiency and up to 1.97x end-to-end throughput enhancement, surpassing state-of-the-art baseline FlashAttention-3. Notably, our solution maintains orthogonality to existing optimization techniques and can be integrated with current inference frameworks, providing a scalable latency-hiding solution for next-generation LLM inference engines.

cs.LG

Ultra-uniform Nanocrystalline Materials via Two-Step Sintering

Nanocrystalline metals and ceramics with <100 nm grain sizes and superior properties (e.g., mechanical strength, hardness, fracture toughness and stored dielectric energy) are of great interest. Much has been discussed about achieving nano grains, but little is known about maintaining grain-size uniformity that is critical for material reliability. An especially intriguing question is whether it is possible to achieve a size distribution narrower than what Hillert[1] theoretically predicted for normal grain growth, a possibility suggested, for growth with a higher growth exponent, by the generalized mean-field theory[2] of Lifshitz, Slyozov, Wagner (LSW)[3,4] and Hillert but never realized in practice. We demonstrate that this can be achieved in bulk materials with an appropriately designed two-step sintering route that (a) takes advantage of the large growth exponent in the intermediate sintering stage to form a most uniform microstructure despite porosity remaining, and (b) freezes the grain growth thereon while continuing densification to reach full density. The resultant dense bulk Al2O3 ceramic has an average grain size of 34 nm and a much narrower size distribution than Hillert's prediction. Bulk Al2O3 with a grain-size distribution narrower than the particle-size distribution of starting powders was also demonstrated using this strategy, as were highly uniform bulk engineering metals and ceramics of either high purity and high melting points (Mo and W-Re) or highly complex compositions (core-shell BaTiO3 and 0.87BaTiO3-0.13Bi(Zn2/3(Nb0.85Ta0.15)1/3)O3).

cond-mat.mtrl-sci

Potential jumps at transport bottlenecks cause instability of nominally ionic solid electrolytes in electrochemical cells

Normal operations of electrochemical devices such as solid oxide fuel cells (SOFC), solid oxide electrolyzer cells (SOEC) and lithium ion batteries (LIB) sometimes fail because of unexpected formation of internal phases. These phases include oxygen bubbles at grain boundaries inside the zirconia electrolyte of SOEC, isolated Li metal islands inside the (garnet type) Li7La3Zr2O12 electrolyte of all-solid-state LIB, and similar Na metal islands inside the Na-beta-alumina and NASICON electrolytes of Na-S batteries. Remarkably, although the devices can operate in both polarities, the propensity for failure depends on the polarity. Here we explain these and other phenomena in nominally ionic solid electrolytes and mixed-conducting electrodes in simple thermodynamic and kinetic terms: the unexpected internal phases are caused by a large potential jump that is needed to push a constant ion or electron flow through its internal transport bottleneck. Definite rules for internal phase formation including its polarity dependence are formulated to help predict and mitigate it, which leads to microstructural instability, efficiency deterioration and breakdown.

cond-mat.mtrl-sci

Electron Localization Enhances Cation Diffusion in Transition Metal Oxides: An Electronic Trebuchet Effect

Ion diffusion is a central part of materials physics of fabrication, deformation, phase transformation, structure stability and electrochemical devices. Conventional theory focuses on the defects that mediate diffusion and explains how their populations influenced by oxidation, reduction, irradiation and doping can enhance diffusion. However, we have found the same influences can also elevate their mobility by orders of magnitude in several prototypical transition-metal oxides. First-principles calculation fundamentally connects the latter observation to migrating ion's local structure, which is inherently soft and has a broken symmetry, making it susceptible to electron or hole localization, thereby realizing a lower saddle-point energy. This finding resolves an unanswered question in physical ceramics of the past 30 years: why cation diffusion against the prediction of classical nonstoichiometric defect physics is enhanced in reduced zirconia, ceria and structurally related ceramics? It also suggests the saddle-point electron-phonon interaction that enables a negative-U state is akin to the counterweight effect that enables a trebuchet. This simple picture for the transitional state explains why enhanced kinetics mediated by radical-like-ion migration occurs often, especially under extreme conditions.

cond-mat.mtrl-sci

DC Electrical Degradation of YSZ: Voltage Controlled Electrical Metallization of A Fast Ion Conducting Insulator

DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated lifetime tests (HALT) are often conducted at higher temperatures with thicker samples. While the mechanism is well established in semiconducting oxides such as perovskite titanates, it is not in stabilized zirconia and other fast oxygen-ion conductors that have little electronic conductivity. Here we model the mechanism by an oxygen-driven, transport-limited, metal-insulator transition, which finds support in rich experimental observations - including in situ videos and variable temperature studies - of yttria-stabilized zirconia. They are contrasted with the findings in semiconducting titanates and resistance memory, and provide new insight into ceramic processing with extremely rapid heating and cooling such as flash sintering and melt processing.

cond-mat.mtrl-sci

Inversion of oxygen potential transitions at grain boundaries of SOFC/SOEC electrolytes

Solid oxide fuel/electrolyzer cell (SOFC/SOEC) converts energy between chemical and electrical forms inversely. Yet electrolyte degradation takes place much more severe for SOEC than SOFC during long-term operations. By solving transport equations, we found very large oxygen potential gradients and sharp oxygen potential transitions at grain boundaries of polycrystalline SOFC/SOEC electrolyte. Surprisingly, an inversion of oxygen potential transitions was identified, suggesting a fundamentally different transport mechanism for minor electronic charge carriers. Such findings could be critical to understand and eliminate SOFC/SOEC degradations in practical applications.

cond-mat.mtrl-sci

Electron Localization Enhances Cation Diffusion in Reduced ZrO2, CeO2 and BaTiO3

According to defect chemistry, the experimental observations of enhanced cation diffusion in a reducing atmosphere in zirconia, ceria and barium titanate are in support of an interstitial mechanism. Yet previous computational studies always found a much higher formation energy for cation interstitials than for cation vacancies, which would rule out the interstitial mechanism. The conundrum has been resolved via first-principles calculations comparing migration of reduced cations and oxidized ones, in cubic ZrO2, CeO2 and BaTiO3. In nearly all cases, reduction alone lowers the migration barrier, and pronounced lowering results if cation's electrostatic energy at the saddle point decreases. The latter is most effectively realized when a Ti cation is allowed to migrate via an empty Ba site thus being fully screened all the way by neighboring anions. Since reduction creates oxygen vacancies as well, which are highly mobile, we also studied their effect on cation migration, and found it only marginally lowers the migration barrier. In several cases, however, a large synergistic effect between cation reduction and oxygen vacancy is revealed, causing an electron to localize in the saddle-point state at a much lower energy than normal, signaling that the saddle point is a negative-U state in which the soft environment enables a large electron-phonon interaction that can over-compensate the on-site Coulomb repulsion. These general findings are expected to be applicable to defect-mediated ion migration in most transitional metal oxides.

cond-mat.mtrl-sci

Oxygen Potential Transition in Mixed Conducting Oxide Electrolyte

It is generally assumed that oxygen potential in a thin oxide electrolyte follows a linear distribution between electrodes. Jacobsen and Mogensen have shown, however, that this is not the case for thin zirconia membranes in solid oxide electrochemical cells. Here we demonstrate that there is a ubiquitous oxygen potential transition rooted in the p-type/n-type transition of electronic conductivity inside mixed conducting oxides, and that the transition is extremely sensitive to electrode potential and current density. It is also remarkably sensitive to the conductivity ratio of electrons and holes, as well as their association with lattice oxygens and vacancies, which tends to increase the oxygen flow. Direct evidence of a sharp oxygen potential transition has been found in an equally sharp grain size transition in electrically loaded zirconia. More broadly speaking, the oxygen potential transition is akin to a first-order phase transition. Therefore, it will suffer interface instability, especially in high-current-density devices. These findings provide new opportunities to understand several disparate observations in the literature, from microstructural degradation and stress distribution in solid oxide fuel/electrolyzer cells, to field-assisted sintering, to conducting filaments in resistance memory, to dendrite formation in electrochemical cells.

cond-mat.mtrl-sci

Purely electronic nanometallic ReRAM

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such resistance modulation usually involves ion migration and filament formation, which usually lead to relatively low device reliability and yield. Resistance switching can also come from an entirely electronic origin, as in nanometallic memory, by electron trapping and detrapping. Recent research has revealed additional merits of its mechanism, which entails smart, atomic-sized floating gates that can be easily engineered in amorphous Si, oxides, and nitrides. This article addresses the basic ideas of nanometallic ReRAM, which may also be a contender for analogue computing and non-von Neumann-type computation.

cond-mat.mes-hall

Electrical and Hydrogen Reduction Enhances Kinetics in Doped Zirconia and Ceria: II. Mapping Electrode Polarization and Vacancy Condensation in YSZ

Knowing the correlation between grain boundary mobility and oxygen potential in yttria stabilized zirconia (YSZ), we have utilized the grain size as a microstructural marker to map local oxygen potential. Abrupt oxygen potential transition is established under a large current density and in thicker samples. Cathodically depressed oxygen potential can be easily triggered by poor electrode kinetics or in an oxygen-lean environment. Widespread cavitation in the presence of highly reducing oxygen potential suggests oxygen vacancy condensation instead of oxygen bubble formation as commonly assumed for solid oxide fuel/electrolysis cells. These results also suggest electrode kinetics has a direct influence on the microstructure and properties of ceramics sintered under a large electric current.

cond-mat.mtrl-sci

A Mathematical Treatment to Determine Transient Growth Kinetics from a Given Size Distribution

Particle coarsening and grain growth take place to minimize the total interfacial energy. The classical mean-field treatments by Lifshitz, Slyozov, [1] Wagner [2] and Hillert [3] predicted cubic growth law under bulk-diffusion controlled precipitation coarsening and parabolic growth law under interface controlled grain growth, as well as their steady-state size distribution. When the size distribution is the steady-state one, the average grain size satisfies the following dependence: under bulk-diffusion control and under interface control, with correct slopes definitely given by the theory. However, when the size distribution does not satisfy the steady-state one, the growth kinetics would deviate from theoretical prediction. As is shown by numerical simulations in Ref. 4 and 5, the deviation is less obvious in the growth law, but more evident in the slope of the growth curve. Specifically, starting from a non-steady-state size distribution, the parabolic/cubic growth law would be recovered quickly, yet the convergence of the slope in the or curve is extremely slow. Therefore, it would be interesting to know how to calculate the instantaneous slope of the growth kinetics from an arbitrarily given size distribution. As will be shown below, assuming a known growth law, the analytical solution can be easily obtained and the exact solution can be obtained by numerical integration.

cond-mat.mtrl-sci

Grain Growth with Size-Dependent or Statistically Distributed Mobility

Conventional grain growth is rate-limited by the mobility of grain boundary. To describe similar phenomena limited by the mobility of other grain junctions, we have developed a general theory allowing for size-dependent mobility and its statistical variance. We obtained analytic solutions for the steady-state size distribution and the growth exponent, defined as (grain size)n ~ time, down to n=1, which arises when the mobility of three-grain lines is rate-limiting. When the mobility of four-grain junctions is rate-limiting, exponential growth and a bifurcating size distribution result. These solutions manifest a general trend: The size distribution narrows with increasing n. Yet experimentally the opposite trend has been observed recently, which can only be reproduced in simulation if the mobility distribution is made at lease bimodal, with one mode being immobile or nearly immobile. The latter can be realized in slow grain growth below the temperature of mobility transition.

cond-mat.mtrl-sci

Mobility Transition at Grain Boundaries in Two-Step Sintered 8 mol% Yttria Stabilized Zirconia

Stagnation of grain growth is often attributed to impurity segregation. Yttria-stabilized cubic zirconia does not evidence any segregation-induced slowdown, as its grain growth obeys the parabolic law when the grain size increases by more than one order of magnitude. However, lowering the temperature below 1300 oC triggers an abrupt slowdown, constraining the average grains to grow by less than 0.5 $μ$m in 1000 h despite a relatively large driving force imparted in the fine grains of ~0.5 $μ$m. Yet isolated pockets of abnormally large grains, along with pockets of abnormally small grains, emerge in the same latter sample. Such microstructure bifurcation has never been observed before, and can only be explained by an inhomogeneous distribution of immobile four-grain junctions. The implications of these findings for two-step sintering are discussed.

cond-mat.mtrl-sci

A Computational Study of Yttria-Stabilized Zirconia: I. Using Crystal Chemistry to Search for the Ground State on a Glassy Energy Landscape

Yttria-stabilized zirconia (YSZ), a ZrO2-Y2O3 solid solution that contains a large population of oxygen vacancies, is widely used in energy and industrial applications. Past computational studies correctly predicted the anion diffusivity but not the cation diffusivity, which is important for material processing and stability. One of the challenges lies in identifying a plausible configuration akin to the ground state in a glassy landscape. This is unlikely to come from random sampling of even a very large sample space, but the odds are much improved by incorporating packing preferences revealed by a modest sized configurational library established from empirical potential calculations. Ab initio calculations corroborated these preferences, which prove remarkably robust extending to the fifth cation-oxygen shell about 8 Å away. Yet because of frustration there are still rampant violations of packing preferences and charge neutrality in the ground state, and the approach toward it bears a close analogy to glass relaxations. Fast relaxations proceed by fast oxygen movement around cations, while slow relaxations require slow cation diffusion. The latter is necessarily cooperative because of strong coupling imposed by the long-range packing preferences.

cond-mat.mtrl-sci

A Computational Study of Yttria-Stabilized Zirconia: II. Cation Diffusion

Cubic yttria-stabilized zirconia is widely used in industrial electrochemical devices. While its fast oxygen ion diffusion is well understood, why cation diffusion is much slower-its activation energy (~5 eV) is 10 times that of anion diffusion-remains a mystery. Indeed, all previous computational studies predicted more than 5 eV is needed for forming a cation defect, and another 5 eV for moving one. In contrast, our ab initio calculations have correctly predicted the experimentally observed cation diffusivity. We found Schottky pairs are the dominant defects that provide cation vacancies, and their local environments and migrating path are dictated by packing preferences. As a cation exchanges position with a neighboring vacancy, it passes by an empty interstitial site and severely displaces two oxygen neighbors with shortened Zr-O distances. This causes a short-range repulsion against the migrating cation and a long-range disturbance of the surrounding, which explains why cation diffusion is relatively difficult. In comparison, cubic zirconia's migrating oxygen only minimally disturbs neighboring Zr, which explains why it is a fast oxygen conductor.

cond-mat.mtrl-sci

On the Onset of the Flash Transition in Single Crystals of Cubic Zirconia

The reported onset temperatures of the flash transition in cubic zirconia single crystals have been analyzed in the present note. The analysis for high-temperature low-field data gives an activation energy of 0.99 eV for the charge transport, which agrees well with the measured ionic conductivity data in cubic zirconia single crystal. Electrical reduction is believed to play an additional role under low-temperature high-field conditions, facilitating electrical/thermal runaway under more modest conditions.

cond-mat.mtrl-sci

On the Hotspot Problem in Flash Sintering

A perturbation analysis has been conducted to evaluate the generation of hotspots inside an electrical loaded ceramic sample, which is assumed to have an Arrhenius-type conductivity. The results identified a critical size, above which a small temperature perturbations will be magnified and hotspots will be generated. It provides an estimate for the largest sample size suitable for flash sintering, beyond which hotspots are likely to form, resulting in inhomogeneous heating and sintering.

cond-mat.mtrl-sci