SearcharxivSearch

arXiv subjects

Yann Beillard

Publications and source records attributed to Yann Beillard.

2 recordsLinked to original sources

Functional Interface Blocks for Neuromorphic Hardware: A Junction-Centered Framework

Heterogeneous neuromorphic hardware integrates devices with dissimilar electrical characteristics and dynamics, making functional compatibility at their interconnections a primary design challenge. Direct coupling alone is insufficient to ensure correct operation, because the load-line conditions established at each junction determine the effective operating regime. Here, we propose a junction-centered interface framework in which inter-device connections are described through assigned drive/sense roles and organized into canonical functional interface blocks. As a concrete hardware realization, a second-generation current conveyor (CCII)-based implementation is then adopted as a composite realization of these interface primitives. The framework is validated experimentally in a Pavlovian-conditioning demonstrator combining a memristive synapse with a unijunction-transistor (UJT) post-neuron. By linking local junction conditions to reusable interface functions, the proposed methodology provides a systematic basis for the design and analysis of heterogeneous neuromorphic systems.

cs.ET

Towards scalable cryogenic quantum dot biasing using memristor-based DC sources

Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operation of a commercial discrete operational amplifier down to 1.2K which is used on the DC source prototype. Then, the tunability of the memristor-based DC source is validated by performing several 250mV-DC sweeps with a resolution of 10mV at room temperature and at 1.2K. Additionally, the DC source prototype exhibits a limited output drift of $\approx1\mathrm{μVs^{-1}}$ at 1.2K. This showcases the potential of memristor-based DC sources for quantum dot biasing. Limitations in power consumption and voltage resolution using discrete components highlight the need for a fully integrated and scalable complementary metal-oxide-semiconductor-based (CMOS-based) approach. To address this, we propose to monolithically co-integrate emerging non-volatile memories (eNVMs) and 65nm CMOS circuitry. Simulations reveal a reduction in power consumption, down to $\mathrm{10μW}$ per DC source and in footprint. This allows for the integration of up to one million eNVM-based DC sources at the 4.2K stage of a dilution fridge, paving the way for near term large-scale quantum computing applications.

cs.ET