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Yann Le Godec

Publications and source records attributed to Yann Le Godec.

At least 19 recordsLinked to original sources

Superconductivity in strongly overdoped cuprates: beyond the single-band model

In order to explain the observation of an extended superconducting region in several overdoped cuprates, which contrasts the dome scenario, by means of neutron and synchrotron x-ray powder diffraction we study the crystal structure of YBa$_2$Cu$_3$O$_{y}$, where strong oxygen overdoping up to $y = 7.4$ is achieved under high-pressure. A bond valence sum analysis indicates that 1/5 of the extra holes created by the excess oxygen are transferred to the CuO$_2$ planes, thus increasing the hole density up to $p=0.27$ hole/Cu, where superconductivity is expected to vanish according to the dome scenario. Instead, our data confirm a previous observation [Okai, Ono and Mitsuhashi, Physica C: Superconductivity {\bf 366}, 164 (2002)] that the superconducting critical temperature, $T_c$, remains constant with $y$. Our data analysis accounts for this discrepancy in terms of the much shorter bond between the apical oxygen and the planar Cu ion, which suggests that the extra holes occupy the $a_1$-symmetry states formed by $d_{3z^2-r^2}$ orbitals, instead of the usual $b_1$-symmetry Zhang-Rice singlet states formed by $d_{x^2-y^2}$ orbitals. Suitable spectroscopic measurements on single crystals may support such a two-band scenario, which would require a totally different theoretical approach to explain superconductivity in cuprates.

cond-mat.supr-con

Multiscale insight into the Cd1-xZnxTe vibrational-mechanical properties -- High-pressure experiments and ab initio calculations

The Cd1-xZnxTe semiconductor alloy is a regular system regarding its macroscopic mechanic properties in that its experimental bulk modulus exhibits a linear x-dependence, in line with ab initio predictions. Complexity arises at the bond scale, referring to the intricate Cd1-xZnxTe percolation-type Raman pattern [T. Alhaddad et al., Journal of Applied Physics 133, 065701 (2023)]. This offers an appealing benchmark to test various phonon coupling processes at diverse length scales in a compact multi-oscillator assembly, presently tuned by pressure. At x around 0, an inter-bond long-range/macro electric coupling between the matrix and impurity polar phonons is detuned under pressure. Inversely, at x around 1, an intra-bond short-range/nano mechanic coupling is enforced between the two Zn Te apolar sub-phonons stemming from same and alien percolation-type environments. The pressure-induced macro/nano polar/apolar coupling/decoupling processes are compared within a model of two coupled electric/mechanic harmonic oscillators in terms of a compromise between proximity to resonance and strength of coupling, impacting the degree of mode mixing, with ab initio (apolar case) and analytical (polar case) Raman calculations in support. Notably, the free mechanic coupling at x around 1 opposes the achievement of a phonon exceptional point, manifesting the inhibition of mechanic coupling, earlier evidenced with similar bonds for x smaller than 0.5. Hence, the pressure dependence of a given bond vibration in a disordered alloy basically differs depending on whether the bond is matrix-like, i.e., self-connected in bulk (free coupling), or dispersed, i.e., self-connected in a chain (inhibited coupling). This features pressure-tunable percolation-based on-off phonon switches in complex media.

cond-mat.mtrl-sci

When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature

The role of carbon in the formation of alpha boron at high pressure and high temperature (HPHT) has been investigated by combining HPHT experiments and density functional theory (DFT) calculations. Starting from beta rhombohedral or amorphous boron and amorphous carbon at 5 GPa, the alpha boron phase has been repeatedly observed between 1473 K and 2273 K, at temperatures that are much higher than those reported in the phase diagram of boron. The DFT investigation of the effect of carbon insertion into the alpha rhombohedral boron atomic structure on the formation enthalpy, volume and optical properties shows that only the (B11C) substituted icosahedron defect accounts for the slight volume contraction observed in α boron. It is also compatible with the observed red colour of α boron crystals, and consistently has a very low formation energy. Our calculations also provide a calibration tool to evaluate the carbon concentration in the samples. Finally, the synthesis temperature is found to be an easy means to tune the carbon concentration on demand.

cond-mat.mtrl-sci

Multi-scale characterization of hexagonal Si-4H: a hierarchical nanostructured material

In this work we present a detailed structural characterization of Si-4H, a newly discovered bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using multi-scale imaging, we reveal a hierarchical structure in the morphology of Si-4H obtained from high-pressure synthesis. We demonstrate discrete structural units, platelets, at an intermediate length-scale between the bulk pellets synthesized at high pressures and the flake-like crystallites inferred in previous studies. Direct observation of the platelets reveals their 2D structure, with planar faces spanning hundreds of nanometers to a few micrometers and thicknesses of only tens of nanometers. We separated and dispersed small packets of quasi-single platelets, which enabled us to analyze the crystalline domains within each grain. With this view, we demonstrate that Si-4H platelets represent the smallest crystalline structural units, which can bend at the single-domain level. Our characterization of the quasi-2D, flexible platelets of hexagonal Si-4H and proof of concept that the platelets can be dispersed and manipulated quite simply demonstrate opportunities to design novel optoelectronic and solar devices.

cond-mat.mtrl-sci

Boron carbide under torsional deformation: evidence of the formation of chain vacancies in the plastic regime

We report a combined experimental and theoretical study of boron carbide under stress/deformation. A special rotating anvil press, the rotating tomography Paris Edinburgh cell (RotoPEC), has been used to apply torsional deformation to boron carbide under a pressure of 5~GPa at ambient temperature. Subsequent damages and point defects have been analysed at ambient pressure by energy dispersive X-ray microdiffraction at the synchrotron and by Raman spectroscopy, combined with calculations based on the density functional theory (DFT). We show that apart from the signals due to B$_4$C, new peaks appear in both characterisation methods. The DFT calculations of atomic structures and phonon frequencies enable us to attribute most of the new peaks to boron vacancies in the intericosahedral chains of boron carbide. Some of the Raman spectra also show three peaks that have been attributed to amorphous boron carbide in the literature. Deformed boron carbide thus shows small inclusions of clusters of boron carbide with chain vacancies, and/or small zones interpreted as amorphous zones.

cond-mat.mtrl-sci

Equations of state of new boron-rich selenides B$_6$Se and B$_{12}$Se

Two novel of boron-rich selenides, orthorhombic B$_6$Se and rhombohedral B$_{12}$Se, have been recently synthesized at high pressure - high temperature conditions. Room-temperature compressibilities of these phases were studied in a diamond anvil cell using synchrotron powder X-ray diffraction. A fit of experimental p-V data by third-order Birch-Murnaghan equation of state yielded the bulk moduli of 155(2) GPa for B$_{12}$Se and 144(3) GPa for B$_6$Se. No pressure-induced phase transitions have been observed in the studied pressure range, i.e., up to 35 GPa.

cond-mat.mtrl-sci

Synthesis of boron carbide from its elements up to 13 GPa

The formation of boron carbide under high pressures and from elemental reactants has been studied and optimum parameters have been determined by varying the (P, T, reactants) conditions. To this end, stoichiometric mixtures of commercial beta rhombohedral boron and amorphous glassy carbon have been subjected to temperatures ranging from 1473 K to 2473 K at pressures of 2 GPa, 5 GPa and 13 GPa. Similar syntheses have been repeated for mixtures of beta boron and graphite, and amorphous boron and amorphous carbon at 2 GPa and 5 GPa. The carbon concentration of boron carbide is shown to be affected by pressure at which it is synthesised from elements, and we propose pressure as a means to control the carbon content. The formation temperature is shown to be affected by the pressure and the choice of the reactants. The effect of temperature cycling on the formation temperature has also been studied. The formation of alpha boron as an intermediate phase is seen at 5 GPa before the formation of boron carbide.

cond-mat.mtrl-sci

A hunt for ultrahard materials

Recent results on search (theoretical prediction, high-pressure synthesis, etc.) for novel superhard and ultrahard materials are briefly reviewed.

cond-mat.mtrl-sci

High-pressure synthesis of superhard and ultrahard materials

A brief overview on high-pressure synthesis of superhard and ultrahard materials is presented in this tutorial paper. Modern high-pressure chemistry represents a vast exciting area of research which can lead to new industrially important materials with exceptional mechanical properties. This field is only just beginning to realize its huge potential, and the image of "terra incognita" is not misused. We focus on three facets of this expanding research field by detailing: (i) the most promising chemical systems to explore (i.e. "where to search"); (ii) the various methodological strategies for exploring these systems (i.e. "how to explore"); (iii) the technological and conceptual tools to study the latter (i.e. "the research tools"). These three aspects that are crucial in this research are illustrated by examples of the recent results on high pressure - high temperature synthesis of novel super- and ultrahard phases (orthorhombic gamma-B28, diamond-like BC5, rhombohedral B13N2 and cubic ternary B-C-N phases). Finally, some perspectives of this research area are briefly reviewed.

cond-mat.mtrl-sci

Thermoelastic equation of state and melting of Mg metal at high pressure and high temperature

The p-V-T equation of state of magnesium metal has been measured up to 20 GPa and 1500 K using both multianvil and opposite anvil techniques combined with synchrotron X-ray diffraction. To fit the experimental data, the model of Anderson-Grüneisen has been used with fixed parameter δT. The 300-K bulk modulus of B0 = 32.5(1) GPa and its first pressure derivative, B0' = 3.73(2), have been obtained by fitting available data up to 20 GPa to Murnaghan equation of state. Thermal expansion at ambient pressure has been described using second order polynomial with coefficients a = 25(2)x10-6 K-1 and b = 9.4(4)x10-9 K-2. The parameter describing simultaneous pressure and temperature impact on thermal expansion coefficient (and, therefore, volume) is δT = 1.5(5). The good agreement between fitted and experimental isobars has been achieved to relative volumes of 0.75. The Mg melting observed by X-ray diffraction and in situ electrical resistivity measurements confirms previous results and additionally confirms the p-T estimations in the vicinity of melting.

cond-mat.mtrl-sci

Equation of state of boron subarsenide B12As2 to 47 GPa

Compressibility of boron subarsenide B12As2 has been studied by synchrotron X-ray diffraction up to 47 GPa at room temperature in a diamond anvil cell using Ne pressure transmitting medium. A fit of experimental p-V data by Vinet equation of state yielded the bulk modulus of 150(4) GPa and its first pressure derivative of 6.4(3). No pressure-induced phase transitions have been observed.

cond-mat.mtrl-sci

Boron monosulfide: equation of state and pressure-induced phase transition

Quasi-hydrostatic compression of rhombohedral boron monosulfide (r-BS) has been studied up to 50 GPa at room temperature using diamond-anvil cells and angle-dispersive synchrotron X-ray diffraction. A fit of the experimental P-V data to the Vinet equation of state yields bulk modulus of 42.2(1.4) GPa and its first pressure derivative of 7.6(2) that are in excellent agreement with our ab initio calculations. Formation of a new high-pressure phase of boron monosulfide (hp-BS) has been observed above 35 GPa. According to ab initio evolutionary crystal structure predictions combined with Rietveld refinement of high-pressure X-ray diffraction data, the structure of hp-BS has trigonal symmetry and belongs to the space group P-3m1. As it follows from electron density of states calculations, the phase transformation is accompanied by an insulator-metal transition.

cond-mat.mtrl-sci

Orthorhombic boron oxide under pressure: in situ study by X-ray diffraction and Raman scattering

High-pressure phase of boron oxide, orthorhombic \b{eta}-B2O3, has been studied in situ by synchrotron X-ray diffraction to 22 GPa and Raman scattering to 46 GPa at room temperature. The bulk modulus of \b{eta}-B2O3 has been found to be 169(3) GPa that is in good agreement with our ab initio calculations. Raman and IR spectra of \b{eta}-B2O3 have been measured at ambient pressure, all experimentally observed bands have been attributed to the theoretically calculated ones, and the mode assignment has been performed. Based on the data on Raman shift as a function of pressure, combined with equation-of-state data, the Grüneisen parameters of all experimentally observed Raman bands have been calculated. \b{eta}-B2O3 enriched by 10B isotope has been synthesized, and the effect of boron isotopic substitution on Raman spectra has been studied.

cond-mat.mtrl-sci

Phase boundary between Na-Si clathrates of structures I and II at high pressures and high temperatures

Understanding the covalent clathrate formation is a crucial point for the design of new superhard materials with intrinsic coupling of superhardness and metallic conductivity. Silicon clathrates have the archetype structures that can serve an existant model compounds for superhard clathrate frameworks "Si-B", "Si-C", "B-C" and "C" with intercalated atoms (e.g. alkali metals or even halogenes) that can assure the metalic properties. Here we report the in situ and ex situ studies of high-pressure formation and stability of clathrates Na8Si46 (structure I) and Na24+xSi136 (structure II). Experiments have been performed using standard Paris-Edinburgh cells (opposite anvils) up to 6 GPa and 1500 K. We have established that chemical interactions in Na-Si system and transition between two structures of clathrates occur at temperatures below silicon melting. The strong sensitivity of crystallization products to the sodium concentration have been observed. A tentative diagram of clathrate transformations has been proposed. At least up to ~6 GPa, Na24+xSi136 (structure II) is stable at lower temperatures as compared to Na8Si46 (structure I).

cond-mat.mtrl-sci

Melting of B12P2 boron subphosphide under pressure

Melting of boron subphosphide (B12P2) to 26 GPa has been studied by in situ synchrotron X-ray powder diffraction in a laser-heated diamond anvil cell, and by quenching and electrical resistance measurements in a toroid-type high-pressure apparatus. B12P2 melts congruently, and the melting curve has a positive slope of 23(6) K/GPa. No solid-state phase transition was observed up to the melting in the whole pressure range under study.

cond-mat.mtrl-sci

Boron phosphide under pressure: in situ study by Raman scattering and X-ray diffraction

Cubic boron phosphide BP has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B0 = 174(2) GPa has been established, which is in excellent agreement with our ab initio calculations. The data on Raman shift as a function of pressure, combined with equation-of-state data, allowed us to estimate the Grüneisen parameters of the TO and LO modes of zinc-blende structure, γGTO = 1.16 and γGLO = 1.04, just like in the case of other AIIIBV diamond-like phases, for which γGTO > γGLO = 1. We also established that the pressure dependence of the effective electro-optical constant α is responsible for a strong change in relative intensities of the TO and LO modes from ITO/ILO ~0.25 at 0.1 MPa to ITO/ILO ~2.5 at 45 GPa, for which we also find excellent agreement between experiment and theory.

cond-mat.mtrl-sci

Phonon study of rhombohedral BS under high pressure

Raman spectra of rhombohedral boron monosulfide (r-BS) were measured under pressures up to 34 GPa at room temperature. No pressure-induced structural phase transition was observed, while strong pressure shift of Raman bands towards higher wavenumbers has been revealed. IR spectroscopy as a complementary technique has been used in order to completely describe the phonon modes of r-BS. All experimentally observed bands have been compared with theoretically calculated ones and modes assignment has been performed. r-BS enriched by 10B isotope was synthesized, and the effect of boron isotopic substitution on Raman spectra was observed and analyzed.

cond-mat.mtrl-sci

Equation of state of single-crystal cubic boron phosphide

The 300 K equation of state of cubic (zinc-blende) boron phosphide BP has been studied by in situ single-crystal X-ray diffraction with synchrotron radiation up to 55 GPa. The measurements have been performed under quasi-hydrostatic conditions using a Ne pressure medium in a diamond anvil cell. A fit of the experimental p-V data to the Vinet equation of state yields the bulk modulus B0 of 179(1) GPa with its pressure derivative of 3.3(1). These values are in a good agreement with previous elastic measurements, as well as with semiempirical estimations.

cond-mat.mtrl-sci