arXiv subjects

Yann-Michel Niquet

Publications and source records attributed to Yann-Michel Niquet.

At least 19 recordsLinked to original sources

arXiv2026

Disorder-independent hole spin manipulation by hopping

Spin manipulation by hopping has recently emerged as a promising strategy to control hole spins in quantum dots using exclusively baseband control, thereby mitigating power dissipation and high-frequency management constraints in large-scale architectures. Unlike conventional approaches such as electron dipole spin resonance (EDSR), this mechanism exploits dot-to-dot variations of the spin precession axes to enable spin rotations. However, it is intrinsically disorder-dependent: in the absence of sufficient variability, the precession axes remain aligned and spin manipulation becomes ineffective. This fundamental reliance on disorder raises concerns regarding its compatibility with the long-term evolution of spin-qubit platforms toward improved material quality, cleaner interfaces, and enhanced device reproducibility. Here, we numerically assess the viability of spin manipulation by hopping as a function of disorder strength and demonstrate that its implementation is indeed increasingly constrained as disorder is reduced. To overcome this limitation, we propose an alternative strategy based on hopping between intentionally squeezed quantum dots. This approach retains the advantages of baseband control while being independent of disorder and robust against moderate variability, thereby offering improved prospects for scalable hole-spin quantum computing architectures.

cond-mat.mes-hall↗

arXiv2026

Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector $k_0$ in nuclear spin-free Si quantum wells

Periodic Ge modulations within strained Si quantum wells in SiGe heterostructures offer a route to deterministically enhance conduction-band valley splitting in Si, a key requirement for scalable spin-qubit quantum computing. Efficient enhancement requires modulations in the order of the Si valley wavevector $k_0$ (9.7 nm$^{-1}$), corresponding to a period of 0.64 nm and near-monolayer growth control. Using nuclear-spin-free molecular beam epitaxy with $^{28}$Si and $^{72}$Ge, we demonstrate Ge-modulated Si quantum wells with periods from 2.00 to 0.49 nm, including modulations at $k_0$ and $2k_0/3$. Synchrotron X-ray techniques and scanning transmission electron microscopy reveal laterally homogeneous Ge modulations over micrometer scales, with amplitudes up to 10 at-% and gradients reaching 20 at-%/nm. Two-bands $\mathbf{k}\cdot\mathbf{p}$ simulations suggest deterministic enhancement of valley splittings in steep trapezoidal $2k_0/3$ heterostructures, while the effect in $k_0$-type quantum wells is much weaker.

physics.app-ph↗

arXiv2026

Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling

Recent advances in the scaling of spin qubits have led to the development of sparse architectures where spin qubits are distributed across multiple quantum dots. This distributed approach allows for qubit manipulation through hopping and flopping modes and may enable spin shuttling protocols to entangle spins beyond nearest neighbors. Here, we develop a microscopic theory of a minimal sparse array formed by a hole in a double quantum dot. We show the existence of spin-dependent magnetic corrections to the tunnel couplings that help preserve existing sweet spots, even for quantum dots with different $g$-factors, and introduce new ones that are not accounted for in the simplest models. Our analytical and numerical results explain observed sweet spots in state-of-the-art shuttling and cQED experiments, are relevant to hopping and flopping modes, and apply broadly as corrections to each interdot tunnel link in sparse array encodings of any size.

cond-mat.mes-hall↗

arXiv2026

Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles

Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley splitting is small, of order 100 $μ$eV in Si/SiGe quantum wells. Substantial efforts were invested both in theory and experiments to overcome the valley issue. Unfortunately, the existing recipes either rely on atomistic details of the interface that are beyond experimental control, or demand heterostructure profiles beyond current state-of-the-art heterostructure epitaxy. We revisit the valley splitting induced by non-trivial Ge profiles and advocate a novel view of the intervalley coupling as a backscattering on point-like impurities realized by crystal planes containing Ge atoms. This perspective reveals that enhancing the backscattering amplitude, which sets the valley splitting, requires constructive interference of multiple scatterers. % We arrive at a remarkable prediction, that the Ge content along the heterostructure growth direction does not have to have any specific periodicity, including the practically unreachable $2π/(2k_0)$ period, to significantly increase the valley splitting. This statement is corroborated with numerical evidence from tight-binding simulations and intuitive physical interpretations. We devise profiles that seem within the capabilities of current MBE growth techniques and boost the valley splitting beyond the 1\,meV scale.

cond-mat.mes-hall↗

arXiv2026

Valley physics in the two bands $\mathbf{k}\cdot\mathbf{p}$ model for SiGe heterostructures and spin qubits

We discuss the choice and implementation of inter-valley potentials in the so-called two bands $\mathbf{k}\cdot\mathbf{p}$ model for the opposite $X$, $Y$ or $Z$ valleys of silicon. We focus on the description of valley splittings in Si/SiGe heterostructures for spin qubits, with a particular attention to alloy disorder. We demonstrate that the two bands $\mathbf{k}\cdot\mathbf{p}$ model reproduces the valley splittings of atomistic tight-binding calculations in relevant heterostructures (SiGe spikes, wiggle wells...), yet at a much lower cost. We show that the model also captures the effects of valley-orbit mixing and yields the correct inter-valley dipole matrix elements that characterize manipulation, dephasing and relaxation in spin/valley qubits. We simulate a realistic Si/SiGe spin qubit device as an illustration, and discuss electron-phonon interactions in the two bands $\mathbf{k}\cdot\mathbf{p}$ model. Beyond spin qubits, this model enables efficient simulations of SiGe heterostructure devices where spin and valley physics are relevant.

cond-mat.mes-hall↗

arXiv2026

Variability of hole spin qubits in planar Germanium

Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum computation. However, spin-orbit coupling also enhances the sensitivity to electrical disorder, potentially increasing variability. In this work, we perform numerical simulations in a realistic device geometry to quantify the variability of the charge and spin properties of Ge qubits induced by charge traps at the SiGe/oxide interfaces. We show that while the variability of charge properties remains moderate, spin properties (g-factors and Rabi frequencies) show significant dispersion. We explore the implications of this variability for large-scale architectures, and provide guidelines to minimize variability both in terms of interface quality requirements and optimal operation strategies.

cond-mat.mes-hall↗

arXiv2025

Valley Splittings in Si/SiGe Heterostructures from First Principles

We compute valley splittings in Si/SiGe superlattices using ab initio density functional theory (DFT). This first-principle approach is expected to provide an excellent description of interfaces, strains, and atomistic disorder without empirically fitted parameters. We benchmark atomistic tight-binding (TB) and the ``$2k_0$'' theory within the effective mass (EM) approximation against DFT. We show that DFT supports the main conclusions of the 2$k_0$ theory, but reveals some limitations of semi-empirical methods such as the EM and TB, in particular about the description of atomistic disorder. The DFT calculations also highlight the effects of strong valley-orbit mixing at large valley splittings. Nevertheless, TB and the 2$k_0$ theory shall provide reasonable valley splitting statistics in many heterostructures of interest for spin qubit devices.

cond-mat.mtrl-sci↗

arXiv2025

Dressed basis sets for the modeling of exchange interactions in double quantum dots

We discuss the microscopic modeling of exchange interactions between double semiconductor quantum dots used as spin qubits. Starting from a reference full configuration interaction (CI) calculation for the two-particle wave functions, we build a reduced basis set of dressed states that can describe the ground-state singlets and triplets over the whole operational range with as few as one hundred basis functions (as compared to a few thousands for the full CI). This enables fast explorations of the exchange interactions landscape as well as efficient time-dependent simulations. We apply this methodology to a double hole quantum dot in germanium, and discuss the physics of exchange interactions in this system. We show that the net exchange splitting results from a complex interplay between inter-dot tunneling, Coulomb exchange and correlations. We analyze, moreover, the effects of confinement, strains and Rashba interactions on the anisotropic exchange and singlet-triplet mixings at finite magnetic field. We finally illustrate the relevance of this methodology for time-dependent calculations on a singlet-triplet qubit.

cond-mat.mes-hall↗

arXiv2025

Hole spin qubits in unstrained Germanium layers

Strained germanium heterostructures are one of the most promising material for hole spin qubits but suffer from the strong anisotropy of the gyromagnetic factors that hinders the optimization of the magnetic field orientation. The figures of merit (Rabi frequencies, lifetimes...) can indeed vary by an order of magnitude within a few degrees around the heterostructure plane. We propose to address this issue by confining the holes at the interface of an unstrained, bulk Ge substrate or thick buffer. We model such structures and show that the gyromagnetic anisotropy is indeed considerably reduced. In addition, the Rabi frequencies and quality factors can be significantly improved with respect to strained heterostructures. This extends the operational range of the qubits and shall ease the scale-up to many-qubit systems.

cond-mat.mes-hall↗

arXiv2025

Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

(Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of devices due to its time-intensive nature. To address this, we introduce an analytical workflow for the holistic characterization, modelling, and simulation of device heterostructures. This workflow automates the experimental (S)TEM data analysis, providing an in-depth characterization of crystallographic information, 3D orientation, elemental composition, and strain distribution. It reduces a process that typically takes days for a trained human into an automatic routine solved in minutes. Utilizing a physics-guided artificial intelligence model, it generates representative descriptions of materials and samples. The workflow culminates in creating digital twins, 3D finite element and atomic models of millions of atoms, enabling simulations that provide crucial insights into device behaviour in practical applications. Demonstrated with SiGe planar heterostructures for scalable spin qubits, the workflow links digital twins to theoretical properties, revealing how atomic structure impacts materials and functional properties such as spatially-resolved phononic or electronic characteristics, or (inverse) spin orbit lengths. The versatility of our workflow is demonstrated through its application to a wide array of materials systems, device configurations, and sample morphologies.

cond-mat.mtrl-sci↗

arXiv2025

Strain engineering in Ge/GeSi spin qubits heterostructures

The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered by strains. We show that uniaxial strains can raise in-plane $g$-factors above unity while leaving $g_z^*$ essentially constant. We discuss how the etching of an elongated mesa in a strained buffer can actually induce uniaxial (but inhomogeneous) strains in the heterostructure. This broadens the operational magnetic field range and enables spin manipulation by shuttling holes between neighboring dots with different $g$-factors.

cond-mat.mes-hall↗

arXiv2025

A two-dimensional 10-qubit array in germanium with robust and localised qubit control

Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling.

cond-mat.mes-hall↗

arXiv2025

Unifying Floquet theory of longitudinal and dispersive readout

We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of the AC Stark shift as function of the driving strength $A_{\rm q}$, while the dispersive shift $χ$ depends on its curvature. The two quantities become proportional to each other in the weak drive limit ($A_{\rm q}\rightarrow 0$). Our approach unifies the adiabatic limit ($ω_{\rm r}\rightarrow 0$) -- where $g_\parallel$ is generated by the static spectrum curvature (or quantum capacitance) -- with the diabatic one, where the static spectrum plays no role. We derive analytical results supported by exact numerical simulations. We apply them to superconducting and spin-hybrid cQED systems, showcasing the flexibility of faster-than-dispersive longitudinal readout.

quant-ph↗

arXiv2024

Optimal operation of hole spin qubits

Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast, electric-field-mediated control stemming from their intrinsically large spin-orbit coupling [1, 2]. This key feature is accompanied by an undesirable susceptibility to charge noise, which usually limits qubit coherence. Here, by varying the magnetic-field orientation, we experimentally establish the existence of ``sweetlines'' in the polar-azimuthal manifold where the qubit is insensitive to charge noise. In agreement with recent predictions [3], we find that the observed sweetlines host the points of maximal driving efficiency, where we achieve fast Rabi oscillations with quality factors as high as 1200. Furthermore, we demonstrate that moderate adjustments in gate voltages can significantly shift the sweetlines. This tunability allows multiple qubits to be simultaneously made insensitive to electrical noise, paving the way for scalable qubit architectures that fully leverage all-electrical spin control. The conclusions of this experimental study, performed on a silicon metal-oxide-semiconductor device, are expected to apply to other implementations of hole spin qubits.

cond-mat.mes-hall↗

arXiv2024

Parametric longitudinal coupling of a semiconductor charge qubit and a RF resonator

In this study, we provide a full experimental characterization of the parametric longitudinal coupling between a CMOS charge qubit and an off-chip RF resonator. Following Corrigan et al, Phys. Rev. Applied 20, 064005 (2023), we activate parametric longitudinal coupling by driving the charge qubit at the resonator frequency. Managing the crosstalk between the drive applied to the qubit and the resonator allows for the systematic study of the dependence of the longitudinal and dispersive charge-photon couplings on the qubit-resonator detuning and the applied drive. Our experimental estimations of the charge-photon couplings are perfectly reproduced by theoretical simple formulas, without relying on any fitting parameter. We go further by showing a parametric displacement of the resonator's steady state, conditional on the qubit state, and the insensitivity of the longitudinal coupling constant on the photon population of the resonator. Our results open to the exploration of the photon-mediated longitudinal readout and coupling of multiple and distant spins, with long coherent times, in hybrid CMOS cQED architectures.

cond-mat.mes-hall↗

arXiv2024

Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout

The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties. Charge disorder in the amorphous oxides is particularly detrimental owing to its long-range influence. Here we analyze the effects of charge traps at the semiconductor/oxide interface, which are generally believed to play a dominant role in variability. We consider multiple random distributions of these interface traps and numerically calculate their impact on the chemical potentials, detuning and tunnel coupling of two adjacent quantum dots in SiGe heterostructure. Our results highlight the beneficial screening effect of the metal gates. The surface of the heterostructure shall, therefore, be covered as much as possible by the gates in order to limit variability. We propose an alternative layout with tip-shaped gates that maximizes the coverage of the semiconductor/oxide interface and outperforms the usual planar layout in some regimes. This highlights the importance of design in the management of device-to-device variability.

cond-mat.mes-hall↗

arXiv2024

Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits

On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promising host material because one can enhance the spin coherence time by removing spinful $^{29}$Si isotopes. As more experiments rely on isotopic purification of Si, the role of other spinful atoms in the device should be clarified. This is not a straightforward task, as the hyperfine interactions with atoms in the barrier layers are poorly understood. We utilize density functional theory to determine the hyperfine tensors of both Si and Ge in a crystalline epitaxial Si/SiGe quantum well as well as Si and O atoms in an amorphous Si/SiO$_2$ (MOS) interface structure. Based on these results, we estimate the dephasing time $T_2^*$ due to magnetic noise from the spin bath and show that the coherence is limited by interactions with non-Si barrier atoms to a few \textmu s in Si/SiGe (for non-purified Ge) and about 100\,\textmu s in Si-MOS. Expressing these numbers alternatively, in Si/SiGe the interactions with Ge dominate below 1000\,ppm of $^{29}$Si content, and, due to low natural concentration of the spinful oxygen isotopes, the interactions with oxygen in Si-MOS become significant only below 1\,ppm of $^{29}$Si content.

cond-mat.mes-hall↗

arXiv2024

Geometry of the dephasing sweet spots of spin-orbit qubits

The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist "dephasing sweet spots" where the qubit decouples (to first order) from the noise so that the dephasing time reaches a maximum. Here we discuss the nature of the dephasing sweet spots of a spin-orbit qubit electrically coupled to some fluctuator. We characterize the Zeeman energy $E_\mathrm{Z}$ of this qubit by the tensor $G$ such that $E_\mathrm{Z}=μ_B\sqrt{\vec{B}^\mathrm{T}G\vec{B}}$ (with $μ_B$ the Bohr magneton and $\vec{B}$ the magnetic field), and its response to the fluctuator by the derivative $G^\prime$ of $G$ with respect to the fluctuating field. The geometrical nature of the sweet spots on the unit sphere describing the magnetic field orientation depends on the sign of the eigenvalues of $G^\prime$. We show that sweet spots usually draw lines on this sphere. We then discuss how to characterize the electrical susceptibility of a spin-orbit qubit with test modulations on the gates. We apply these considerations to a Ge/GeSi spin qubit heterostructure, and discuss the prospects for the engineering of sweet spots.

cond-mat.mes-hall↗