arXiv subjects

Yannick Hermans

Publications and source records attributed to Yannick Hermans.

3 recordsLinked to original sources

arXiv2026

SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography

The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the highest-performing silicon spin qubits demonstrated to date have relied on electron-beam (e-beam) lithography, its serial exposure process limits reproducibility studies and wafer-scale fabrication. Here, we demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV) lithography in a 300 mm semiconductor pilot line. We report wafer-scale quantum-dot uniformity metrics, including 100 % room-temperature gate-to-gate leakage yield and sub-nanometer control of critical gate dimensions. We characterize four double-dot systems realized in two triple-quantum-dot devices. Gate set tomography (GST) reveals consistently high fidelities across all four systems, with values up to 99.8 % for SPAM, 99.9 % for single-qubit gates, and 99.1 % for two-qubit gates. The devices exhibit highly reproducible exchange turn-on characteristics of 10-13 dec/V, indicating high fabrication uniformity enabled by EUV patterning. These results establish EUV lithography as a viable manufacturing technology for quantum processors based on high-fidelity SiMOS spin qubits.

cond-mat.mes-hall↗

arXiv2025

Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry

Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fabricated in a state-of-the-art 300 mm nanoelectronics foundry and demonstrate substantially enhanced coherence, achieving a Hahn-echo time of $T_2^{\text{Hahn}} = 4\,\mathrm{ms}$ for singlet--triplet oscillations. Employing noise spectroscopy and noise correlation measurements, we identify detuning noise with an amplitude of $\delta \varepsilon_{\mathrm{rms}} = 2.2\,\mu\mathrm{eV}$ (integrated over 90 s) and observe strong zero-phase correlations between two spatially separated spin qubits. The singlet--triplet basis intrinsically rejects these common-mode fluctuations, yielding a pronounced suppression of dephasing. Our results suggest that exploiting the versatility of silicon quantum dots to adapt the qubit encoding to the microscopic noise landscape represents a promising strategy for advancing scalable quantum information processing.

cond-mat.mes-hall↗

arXiv2024

High-coherence superconducting qubits made using industry-standard, advanced semiconductor manufacturing

The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances becomes increasingly critical. Utilizing advanced industrial fabrication processes could facilitate the necessary level of fabrication control to support the continued scaling of quantum processors. However, these industrial processes are currently not optimized to produce high coherence devices, nor are they a priori compatible with the commonly used approaches to make superconducting qubits. In this work, we demonstrate for the first time superconducting transmon qubits manufactured in a 300 mm CMOS pilot line, using industrial fabrication methods, with resulting relaxation and coherence times already exceeding 100 microseconds. We show across-wafer, large-scale statistics studies of coherence, yield, variability, and aging that confirm the validity of our approach. The presented industry-scale fabrication process, using exclusively optical lithography and reactive ion etching, shows performance and yield similar to the conventional laboratory-style techniques utilizing metal lift-off, angled evaporation, and electron-beam writing. Moreover, it offers potential for further upscaling by including three-dimensional integration and additional process optimization using advanced metrology and judicious choice of processing parameters and splits. This result marks the advent of more reliable, large-scale, truly CMOS-compatible fabrication of superconducting quantum computing processors.

quant-ph↗