arXiv subjects

Yanwu Xie

Publications and source records attributed to Yanwu Xie.

30 records · Page 2Linked to original sources

arXiv2018

Superconductivity in a misfit layered compound (SnSe)$_{1.16}$(NbSe$_2$)

The large size single crystals of (SnSe)$_{1.16}$(NbSe$_2$) misfit layered compound were grown and superconductivity with $T_c$ of 3.4 K was first discovered in this system. Powder X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) clearly display the misfit feature between SnSe and NbSe$_2$ subsystems. The Sommerfeld coefficient $γ$ inferred from specific-heat measurements is 16.73 mJ mol$^{-1}$ K$^{-2}$, slightly larger than the usual misfit compounds. The normalized specific heat jump $Δ$$C_e$/$γ$$T_{\rm c}$ is about 0.98, and the electron-phonon coupling constant $λ$$_{e-ph}$ is estimated to be 0.80. The estimated value of the in-plane upper critical magnetic field, $H_{c2}^{ab}$(0), is about 7.82 T, exceeding the Pauli paramagnetic limit slightly. Both the specific-heat and $H_{c2}$ data suggest that (SnSe)$_{1.16}$(NbSe$_2$) is a multi-band superconductor.

cond-mat.supr-con↗

arXiv2018

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. Here, by utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO3/SrTiO3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson-Schrodinger subband model. In particular, the large nonlinear dielectric response of SrTiO3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. Our study provides a broad framework for understanding various reported phenomena at the LaAlO3/SrTiO3 interface.

cond-mat.str-el↗

arXiv2018

The density and disorder tuned superconductor-metal transition in two dimensions

Quantum ground states which arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional (2D) metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating. Strikingly, such metallicity is accompanied with a pseudogap. Here, we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic gates, which enables the comprehensive examination of the electronic phase diagram approaching zero temperature. We find that the pseudogap corresponds to precursor pairing, and the onset of long-range phase coherence forms a 2D superconducting dome as a function of the dual gate voltages. The gate-tuned superconductor-metal transitions are driven by macroscopic phase fluctuations of Josephson coupled superconducting puddles.

cond-mat.supr-con↗

arXiv2018

Origin of interfacial conductivity at complex oxide heterointerfaces: possibility of electron transfer from water chemistry at surface oxygen vacancies

Variety of conducting heterointerfaces have been made between SrTiO3 substrates and thin capping layers of distinctly different oxide materials that can be classified into polar band insulators (e.g. LaAlO3), polar Mott insulators (e.g. LaTiO3), apparently non-polar band insulators (e.g. γ-Al2O3), and amorphous oxides (e.g. amorphous SrTiO3). A fundamental question to ask is if there is a common mechanism that governs interfacial conductivity in all these heterointerfaces. Here, we examined the conductivity of different kinds of heterointerfaces by annealing in oxygen and surface treatment with water. It was found that the conductivity of all the heterointerfaces show a strong dependence on annealing, and can be universally tuned by surface treatment whose effect is determined by the annealing condition. These observations, together with ambient-pressure X-ray photoelectron spectroscopy measurements, suggest that water chemistry at surface oxygen vacancies is a common mechanism that supplies electrons to the interface.

cond-mat.mtrl-sci↗

arXiv2018

Imaging and tuning polarity at SrTiO3 domain walls

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.

cond-mat.mes-hall↗

arXiv2017

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity

Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO3/SrTiO3, two dimensional conductive states form to avoid the polar discontinuity and magnetic properties are found at such interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a conductive state with magnetic properties, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial conductive or magnetic states. As a concrete example, we investigate by first-principles calculations the heterostructures made of ferroelectric perovskite oxide PbTiO3 and non-ferroelectric polarized oxides TiO2. We show that charge is transferred to the interfacial layer forming an interfacial conductive state with ferromagnetic ordering that may persist up to room temperature. Especially, the strong coupling between bulk ferroelectric polarization and interface ferromagnetism represents a new type of magnetoelectric effect, which provides an ideal platform for exploring the intriguing interfacial multiferroics. The findings here are important not only for fundamental science but also for promising applications in nanoscale electronics and spintronics.

cond-mat.mtrl-sci↗

arXiv2016

Ubiquitous strong electron phonon coupling at the interface of FeSe/SrTiO3

The high temperature superconductivity in single-unit-cell (1UC) FeSe on SrTiO3 (STO)(001) and the observation of replica bands by angle-resolved photoemission spectroscopy (ARPES) have led to the conjecture that the coupling between FeSe electron and the STO phonon is responsible for the enhancement of Tc over other FeSe-based superconductors1,2. However the recent observation of a similar superconducting gap in FeSe grown on the (110) surface of STO raises the question of whether a similar mechanism applies3,4. Here we report the ARPES study of the electronic structure of FeSe grown on STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO (001) and STO(110) bare surfaces, where photo doping generates metallic surface states. Similar replica bands separating from the main band by approximately the same energy are observed, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on two different STO surface terminations are likely enhanced by a common coupling between FeSe electrons and STO phonons.

cond-mat.supr-con↗

arXiv2016

Anisotropic transport at the LaAlO3/SrTiO3 interface explained by microscopic imaging of channel-flow over SrTiO3 domains

Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measurements of the LaAlO3/SrTiO3 interface have revealed locally enhanced current flow and accumulation of charge along channels related to SrTiO3 structural domains. These observations raised a key question regarding the role these modulations play in the macroscopic properties of devices. Here we show that the microscopic picture, mapped by scanning superconducting quantum interference device, accounts for a substantial part of the macroscopically measured transport anisotropy. We compared local flux data with transport values, measured simultaneously, over various SrTiO3 domain configurations. We show a clear relation between maps of local current density over specific domain configurations and the measured anisotropy for the same device. The domains divert the direction of current flow, resulting in a direction dependent resistance. We also show that the modulation can be significant and that in some cases up to 95% of the current is modulated over the channels. The orientation and distribution of the SrTiO3 structural domains change between different cooldowns of the same device or when electric fields are applied, affecting the device behavior. Our results, highlight the importance of substrate physics, and in particular, the role of structural domains, in controlling electronic properties of LaAlO3/SrTiO3 devices. Further, these results point to new research directions, exploiting the STO domains ability to divert or even carry current.

cond-mat.mtrl-sci↗

arXiv2014

Quantum longitudinal and Hall transport at the LaAlO3/SrTiO3 interface at low electron densities

We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal resistance, and a plateau-like structure in the Hall conductivity. The Landau indices of the plateaus in the Hall conductivity data show spacing close to 4, in units of the quantum of conductance. These experimental features can be explained by a magnetic breakdown transition, which quantitatively explains the area, structure, and degeneracy of the measured Fermi surface.

cond-mat.mtrl-sci↗

arXiv2013

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces

The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.

cond-mat.mtrl-sci↗

arXiv2011

Control of electronic conduction at an oxide heterointerface using surface polar adsorbates

The transfer of electrons between a solid surface and adsorbed atomic or molecular species is fundamental in natural and synthetic processes, being at the heart of most catalytic reactions and many sensors. In special cases, metallic conduction can be induced at the surface of, for example, Si-terminated SiC1, or mixed-terminated ZnO2, in the presence of a hydrogen adlayer. Generally, only the surface atoms are significantly affected by adsorbates. However, remotely changing electronic states far from the adsorbed layer is possible if these states are electrostatically coupled to the surface. Here we show that the surface adsorption of common solvents such as acetone, ethanol, and water can induce a large change (factor of three) in the conductivity at the buried interface between SrTiO3 substrates and LaAlO3 thin films3-8. This phenomenon is observed only for polar solvents. Our result provides experimental evidence that adsorbates at the LaAlO3 surface induce accumulation of electrons at the LaAlO3/SrTiO3 interface, suggesting a general polarization-facilitated electronic transfer mechanism, which can be used for sensor applications.

cond-mat.mtrl-sci↗

arXiv2010

Charge writing at the LaAlO3/SrTiO3 surface

Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential.

cond-mat.mtrl-sci↗