arXiv subjects

Yanxue Chen

Publications and source records attributed to Yanxue Chen.

6 recordsLinked to original sources

arXiv2025

A voltage-responsive strongly dipolar-coupled macrospin network with emergent dynamics for computing

Emergent behavior, which arises from local interactions between simple elements, is pervasive in nature. It underlies the energy-efficient computing in our brains. However, realizing such dynamics in artificial materials, particularly under low-energy stimuli, remains a fundamental challenge. While dipole-dipole interactions are typically suppressed in magnetic storage, here we harness and amplify them to construct a strongly dipolar-coupled network of SmCo5 macrospins at wafer scale, which can exhibit intrinsic interaction-driven collective dynamics in response to voltage pulses. The network combines three essential ingredients: strong dipolar coupling by large single-domain macrospin, giant voltage control of coercivity over nearly 1000-fold, and disordered network topology with frustrated Ising-like energy landscape. When stimulated by 1 V pulses, the network enters a regime where interaction-driven magnetic behaviors emerge, including spontaneous demagnetization, greatly enhanced magnetization modulation, reversible freeze and resume evolution and stochastic convergence toward low-energy magnetic configurations. All these behaviors are completely absent at the single-nanomagnet level. Furthermore, by constructing micromagnetic models of the strongly dipolar-coupled macrospin networks, we show that the resulting nonlinear, high-dimensional collective dynamics, intrinsic to strongly-interacting systems, can enable accurate chaotic Mackey-Glass prediction and multiclass drone-signal classification. Our work establishes the voltage-responsive strongly-coupled SmCo5 network as a mesoscopic platform for probing emergent magnetic dynamics previously inaccessible under ambient conditions. It also suggests a fundamental distinct route towards scalable, low-voltage computing, one rooted in native physical interaction-driven collective dynamics at the network level.

cond-mat.mtrl-sci↗

arXiv2022

Variation between Antiferromagnetism and Ferrimagnetism in NiPS3 by Electron Doping

How to electrically control magnetic properties of a magnetic material is promising towards spintronic applications, where the investigation of carrier doping effects on antiferromagnetic (AFM) materials remains challenging due to their zero net magnetization. In this work, we found electron doping dependent variation of magnetic orders of a two-dimensional (2D) AFM insulator NiPS3, where doping concentration is tuned by intercalating various organic cations into the van der Waals gaps of NiPS3 without introduction of defects and impurity phases. The doped NiPS3 shows an AFM-ferrimagnetic (FIM) transition at doping level of 0.2-0.5 electrons/cell and a FIM-AFM transition at doping level of >= 0.6 electrons/cell. We propose that the found phenomenon is due to competition between Stoner exchange dominated inter-chain ferromagnetic order and super-exchange dominated inter-chain AFM order at different doping level. Our studies provide a viable way to exploit correlation between electronic structures and magnetic properties of 2D magnetic materials for realization of magnetoelectric effect.

cond-mat.mtrl-sci↗

arXiv2019

Enhanced spin transfer torque in platinum/ferromagnetic-metal structures by optimizing the platinum thickness

Spin transfer torque (STT) driven by a charge current plays a key role in magnetization switching in heavy-metal/ferromagnetic-metal structures. The STT efficiency defined by the ratio between the effective field due to STT and the current density, is required to be improved to reduce energy compulsions in the STT-based spintronic devices. In this work, using the harmonic Hall measurement method, we experimentally studied the STT efficiency in platinum(Pt)/FM structures as a function of the Pt thickness. We found that the STT efficiency strongly depends on the Pt thickness and reaches a maximum value of 4.259 mT/($10^6$A/$cm^{2}$) for the 1.8-nm-thickness Pt sample. This result indicates that competition between spin Hall effect (SHE) and Rashba effect as well as spin diffusion process across the Pt layer determines the Pt thickness for the maximum STT efficiency. We demonstrated the role played by the spin diffusion besides the spin current generation mechanisms in improvement of the STT efficiency, which is helpful in designing STT-based devices.

cond-mat.mtrl-sci↗

arXiv2019

Electrical control of spin mixing conductance in a Y$_3$Fe$_5$O$_{12}$/Platinum bilayer

We report a tunable spin mixing conductance, up to $\pm 22\%$, in a Y${}_{3}$Fe${}_{5}$O${}_{12}$/Platinum (YIG/Pt) bilayer.This control is achieved by applying a gate voltage with an ionic gate technique, which exhibits a gate-dependent ferromagnetic resonance line width. Furthermore, we observed a gate-dependent spin pumping and spin Hall angle in the Pt layer, which is also tunable up to $\pm$ 13.6\%. This work experimentally demonstrates spin current control through spin pumping and a gate voltage in a YIG/Pt bilayer, demonstrating the crucial role of the interfacial charge density for the spin transport properties in magnetic insulator/heavy metal bilayers.

cond-mat.mes-hall↗

arXiv2018

Optical control of magnetism in NiFe/VO2 heterostructures

Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field of spintronics. However, a widely applicable and efficient method to combine optical operation with magnetic modulation is still highly desired. Here, the strongly correlated electron material VO2 is introduced to realize phase-transition based optical control of the magnetism in NiFe. The NiFe/VO2 bilayer heterostructure features appreciable modulations in electrical conductivity (55%), coercivity (60%), and magnetic anisotropy (33.5%). Further analyses indicate that interfacial strain coupling plays a crucial role in this modulation. Utilizing this optically controlled magnetism modulation feature, programmable Boolean logic gates (AND, OR, NAND, NOR, XOR, NXOR and NOT) for high-speed and low-power data processing are demonstrated based on this engineered heterostructure. As a demonstration of phase-transition spintronics, this work may pave the way for next-generation electronics in the post-Moore era.

cond-mat.mtrl-sci↗

arXiv2018

Large phase-transition-induced magnetic anisotropy change in (Co/Pt)2/VO2 heterostructure

We report the phase-transition controlled magnetic anisotropy modulation in the (Co/Pt)2/VO2 heterostructure, where VO2 is introduced into the system to applied an interfacial strain by its metal-insulator transition. A large reversible modulation of the perpendicular magnetic anisotropy (PMA) reaching 38 kJ/m3 is observed during this process. The calculated energy density variation of interfacial anisotropy reaches 100 mJ/m2, which shows significant advantage over traditional modulation strategies. Further experimental results including magnetization change versus temperature, strain buffered modulation and pre-strained sample comparison prove that the interfacial coupling between VO2 and PMA layers plays a crucial role in this modulation. This work, demonstrating the great potential of phase-transition material in efficient magnetic anisotropy modulation, would benefit the exploration for low-power consumption devices.

cond-mat.mes-hall↗