arXiv subjects

Yaohua Liu

Publications and source records attributed to Yaohua Liu.

76 records · Page 5Linked to original sources

arXiv2012

Effects of carrier mobility and morphology in organic semiconductor spin valves

We studied spin transport in four organic semiconductors (OSCs) with different electronic properties, with Fe and Co as the top and bottom ferromagnetic (FM) contacts, respectively. Magnetoresistance (MR) effects were observed up to room temperature in junctions based on an electron-carrying OSC, tris(8-hyroxyquinoline) aluminum (Alq$_3$) and a hole-carrying OSC, copper phthalocyanine (CuPc). The MR shows similar temperature dependence for these two OSCs, which suggests that the FM leads rather than the OSCs play a dominant role on the spin-transport degradation with increasing temperature. We also investigated junctions based on two high lateral mobility electron-carrying OSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N, N'-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide (CF$_3$-NTCDI). However, these junctions showed much weaker spin transport effects. Morphological studies suggest that these high mobility OSC films have much rougher surfaces than either Alq$_3$ or CuPc, therefore the degradation of spin transport may originate from enhanced scattering due to the rougher FM/OSC interfaces. Our study shows that FM/OSC interfaces play an important role for spin transport in organic devices and need further exploration.

cond-mat.mtrl-sci↗

arXiv2012

Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches

We examine the anomalous inverse spin switch behavior in La$_{0.7}$Ca$_{0.3}$MnO$_3$ (LCMO)/YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO)/LCMO trilayers by combined transport studies and polarized neutron reflectometry. Measuring magnetization profiles and magnetoresistance in an in-plane rotating magnetic field, we prove that, contrary to many accepted theoretical scenarios, the relative orientation between the two LCMO's magnetizations is not sufficient to determine the magnetoresistance. Rather the field dependence of magnetoresistance is explained by the interplay between the applied magnetic field and the (exponential tail of the) induced exchange field in YBCO, the latter originating from the electronic reconstruction at the LCMO/YBCO interfaces.

cond-mat.mes-hall↗

arXiv2010

Magnetic Structure in Fe/Sm-Co Exchange Spring Bilayers with Intermixed Interfaces

The depth profile of the intrinsic magnetic properties in an Fe/Sm-Co bilayer fabricated under nearly optimal spring-magnet conditions was determined by complementary studies of polarized neutron reflectometry and micromagnetic simulations. We found that at the Fe/Sm-Co interface the magnetic properties change gradually at the length scale of 8 nm. In this intermixed interfacial region, the saturation magnetization and magnetic anisotropy are lower and the exchange stiffness is higher than values estimated from the model based on a mixture of Fe and Sm-Co phases. Therefore, the intermixed interface yields superior exchange coupling between the Fe and Sm-Co layers, but at the cost of average magnetization.

cond-mat.mtrl-sci↗

arXiv2008

Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures

We have studied magnetotransport in organic-inorganic hybrid multilayer junctions. In these devices, the organic semiconductor (OSC) Alq$_3$ (tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic (FM) Co and Fe layers. The thickness of the Alq$_3$ layer was in the range of 50-150 nm. Positive magnetoresistance (MR) was observed at 4.2 K in a current perpendicular to plane geometry, and these effects persisted up to room temperature. The devices' microstructure was studied by X-ray reflectometry, Auger electron spectroscopy and polarized neutron reflectometry (PNR). The films show well-defined layers with modest average chemical roughness (3-5 nm) at the interface between the Alq$_3$ and the surrounding FM layers. Reflectometry shows that larger MR effects are associated with smaller FM/Alq$_3$ interface width (both chemical and magnetic) and a magnetically dead layer at the Alq$_3$/Fe interface. The PNR data also show that the Co layer, which was deposited on top of the Alq$_3$, adopts a multi-domain magnetic structure at low field and a perfect anti-parallel state is not obtained. The origins of the observed MR are discussed and attributed to spin coherent transport. A lower bound for the spin diffusion length in Alq$_3$ was estimated as $43 \pm 5$ nm at 80 K. However, the subtle correlations between microstructure and magnetotransport indicate the importance of interfacial effects in these systems.

cond-mat.mtrl-sci↗