arXiv subjects

Yaotian Liu

Publications and source records attributed to Yaotian Liu.

9 recordsLinked to original sources

arXiv2026

Arborist: Algorithm-Hardware Co-Design for Fast and Efficient Motion Planning

Real-time motion planning must execute under strict latency and energy constraints on resource-limited platforms. This paper presents Arborist, an algorithm-hardware co-design framework that accelerates Fast Marching Tree (FMT*) motion planning through synergistic algorithmic and architectural innovations. At the algorithm level, Arborist introduces safe multi-tree expansion with global competition management and cross-tree optimality checking to expose inter-tree parallelism while preserving path quality. At the architecture level, our proposed ArboristAccel integrates an Arborist Toolbox that provides hardware support for inter-tree parallelism; a KD-tree Subsystem for high-throughput near-neighbor search; a Parallel-Query Retrieval module that balances multi-bank memory accesses to alleviate system-level memory bandwidth bottlenecks; and a Look-ahead Planning Engine that exploits intra-tree parallelism while preserving path quality by in-order commit. Synthesized in 16 nm and operating at 500 MHz, ArboristAccel sustains more than 1000x speedup over CPU across all workloads, peaking at 2800x on 2D-Maze, and delivers geomean improvements of 8.8x speedup, 4.6x area efficiency, and 3.1x power efficiency over an FMT* ASIC baseline. The corresponding factors relative to a state-of-the-art RRT*-based MOPED accelerator are 8.6x, 1.0x, and 1.8x, at comparable path cost. To the best of our knowledge, ArboristAccel is the first dedicated hardware accelerator for FMT*-based motion planning.

cs.AR↗

arXiv2026

Cross-Stage Sensorimotor Perception Scheduling and Sparse Map Encoding for Efficient Edge Embodied Navigation

Embodied agents must close a perception-to-action loop on embedded hardware under tight latency, memory, and energy budgets, making deployment a system-level co-design problem rather than a model-accuracy problem. We study this challenge for modular Object Goal Navigation (ObjectNav), where our profiling shows semantic mapping dominates per-step latency while goal prediction dominates peak memory. We formulate edge embodied navigation deployment as a budget-constrained design-space problem and introduce two orthogonal optimization knobs: SKIP, an adaptive sensorimotor scheduler that formalizes safe skipping as a bounded map-impact criterion and learns a lightweight predictor to estimate it from cheap sensor cues at each \texttt{FORWARD} step, exposing a principled quality-efficiency knob (depth-based updates are always retained); and SCOUT, a sparse-context encoder that couples submanifold sparse convolutions on active map regions with a lightweight dense context stream. On HM3D across server and embedded platforms, SKIP+SCOUT delivers up to 1.7x end-to-end speedup, 50.5% lower peak memory, and 7.1% higher SPL than the dense baseline at the selected operating point, outperforming naively smaller perception backbones. SKIP transfers to a second modular pipeline (PONI) with near-lossless performance and remains robust under depth-sensor noise. Together, SKIP+SCOUT expose a family of device-aware Pareto operating points for edge physical AI systems.

cs.RO↗

arXiv2026

Supermoiré Chern mosaic in helical trilayer WSe2

Helically twisted multilayers offer access to moiré physics beyond the single-superlattice paradigm, yet their correlated and topological transport properties remain largely unexplored in semiconductor moiré materials. Here we report magnetotransport measurements of helical trilayer WSe2, in which two coupled moiré patterns relax into a supermoiré landscape composed of inequivalent local topological domains with distinct electronic structures and unequal spatial areas. By electrostatic tuning, we identify a trilayer-hybridized regime where interactions and real-space reconstruction combine to generate a plethora of magnetic and topological states absent in the twisted bilayers. At moiré filling factor $ν$ = -1, we observe a ferromagnetic insulating state that is robust against magnetic field and accompanied by a non-quantized anomalous Hall response ~-4 kOhms. This behaviour is consistent with a time-reversal-symmetry-breaking supermoiré Chern mosaic, in which the Hall response arises from the non-cancelling contributions of local domains with opposite Chern character arranged by the relaxed structure. Under strong magnetic fields, a symmetry-broken Chern insulating state (C = 1) emerges near $ν$ = -2/3, displaying a much larger positive Hall response together with strongly enhanced longitudinal resistance, suggestive of field-reconstructed topological minibands and domain-boundary scattering. These results establish relaxed supermoiré semiconductor trilayers as a platform for spatially organized magnetism and topology beyond the bilayer limit.

cond-mat.str-el↗

arXiv2026

Destructive interference of second harmonic generation in AA stacked MoTe$_2$/WSe$_2$

The stacking configuration of two-dimensional materials critically governs their optical and electronic responses. Monolayer transition-metal dichalcogenides (TMDC) lack inversion symmetry and exhibit exciton-enhanced second-harmonic generation (SHG). In TMDC bilayers, 60° (0°) stacking is conventionally expected to suppress (enhance) SHG owing to destructive (constructive) interference of the layer-resolved nonlinear polarizations. Here, we report an unconventional destructive SHG interference in nearly 0°-stacked (AA-stacked) MoTe2/WSe2 heterobilayers using two independent probes: atomic-resolution imaging and stacking-sensitive exciton hybridization measurements. Supported by ab initio GW and Bethe-Salpeter equation calculations, we show that distinct two-photon resonances associated with the WSe2 C exciton and the MoTe2 D exciton generate a nearly $π$ phase difference ($Δϕ$) in their second-order nonlinear susceptibilities $χ^{(2)}$, leading to the anomalous destructive interference. We further demonstrate that in small-angle twisted MoTe2/WSe2, the SHG polarization state is governed by the interplay between twist angle $α$ and phase difference $Δϕ$, and can be mapped onto trajectories on the Poincaré sphere. At excitation energies satisfying $Δϕ$ + 3$α$ = 180°, the SHG output becomes nearly circularly polarized (ellipticity ~ 0.91) and undergoes an abrupt 90° azimuthal rotation, corresponding to a geometric polarization singularity in the parameter space. Our findings open new routes for exciton-resonance engineered nonlinear photonics and stacking-resolved optical functionality in moiré materials.

cond-mat.mes-hall↗

arXiv2026

Emergence of a symmetry-broken Chern insulator near a moiré Kondo breakdown

Moiré semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moiré hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moiré bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moiré filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moiré semiconductors.

cond-mat.mes-hall↗

arXiv2025

LLM-VeriPPA: Power, Performance, and Area Optimization aware Verilog Code Generation with Large Language Models

Large Language Models (LLMs) are gaining prominence in various fields, thanks to their ability to generate high- quality content from human instructions. This paper delves into the field of chip design using LLMs, specifically in Power- Performance-Area (PPA) optimization and the generation of accurate Verilog codes for circuit designs. We introduce a novel framework VeriPPA designed to optimize PPA and generate Verilog code using LLMs. Our method includes a two-stage process where the first stage focuses on improving the functional and syntactic correctness of the generated Verilog codes, while the second stage focuses on optimizing the Verilog codes to meet PPA constraints of circuit designs, a crucial element of chip design. Our framework achieves an 81.37% success rate in syntactic correctness and 62.06% in functional correctness for code genera- tion, outperforming current state-of-the-art (SOTA) methods. On the RTLLM dataset. On the VerilogEval dataset, our framework achieves 99.56% syntactic correctness and 43.79% functional correctness, also surpassing SOTA, which stands at 92.11% for syntactic correctness and 33.57% for functional correctness. Furthermore, Our framework able to optimize the PPA of the designs. These results highlight the potential of LLMs in handling complex technical areas and indicate an encouraging development in the automation of chip design processes.

cs.AR↗

arXiv2025

Transport Evidence for Wigner Crystals in Monolayer MoTe2

The crystallization of charge carriers, dubbed the Wigner crystal, is anticipated at low densities in clean two-dimensional electronic systems (2DES). While there has been extensive investigation across diverse platforms, probing spontaneous charge and spin ordering is hindered by disorder effects and limited interaction energies. Here, we report transport evidence for Wigner crystals with antiferromagnetic exchange interactions in high-quality, hexagonal boron nitride encapsulated monolayer MoTe2, a system that achieves a large interaction parameter (r_s) at proper hole densities. A density-tuned metal-insulator transition (MIT) occurring at 3.1E10^11 cm-2 (corresponding to r_s~32) and pronounced nonlinear charge transport in the insulating regime at low temperatures signify the formation of Wigner crystals. Thermal melting of the crystalline phase is observed below approximately 2 K via temperature-dependent nonlinear transport. Magnetoresistance measurements further reveal a substantial enhancement of spin susceptibility as approaching the MIT. The temperature dependence of spin susceptibility in the Wigner crystal phase closely follows the Curie-Weiss law, with the extracted negative Weiss constant illustrating antiferromagnetic exchange interactions. Furthermore, we have found the system exhibits metallic-like differential resistivity under finite DC bias, possibly indicating the existence of a non-equilibrium coherent state in the depinning of Wigner crystals. Our observations establish monolayer MoTe2 as a promising platform for exploring magnetic and dynamic properties of Wigner crystals.

cond-mat.str-el↗

arXiv2025

Electrothermal manipulation of current-induced phase transitions in ferrimagnetic Mn$_3$Si$_2$Te$_6$

Phase transitions driven by external stimuli are central to condensed matter physics, providing critical insights into symmetry breaking and emergent phenomena. Recently, ferrimagnetic (FiM) Mn$_3$Si$_2$Te$_6$ has attracted considerable attention for its magnetic-field-induced insulator-metal transitions (IMTs) and unconventional current-driven phase transitions, yet the role of applied currents in the magnetic phase remains poorly understood. Here, by combining local magnetization probes and time-resolved transport measurements, we uncover an electrothermal origin for the current-induced first-order-like phase transitions, characterized by abrupt voltage jumps and distinct magnetic domain evolution. Current-voltage (I-V) characteristics measured under triangular waveforms exhibit strong non-reciprocal and hysteretic behaviors, which are significantly suppressed at frequencies ~1000 Hz. Time-resolved studies using rectangular pulsed currents demonstrate that the resistance dynamics closely mirror the equilibrium resistance-temperature profile, directly implicating Joule heating as the driving mechanism. Furthermore, we reveal that the intrinsic I-V response adheres to Ohm's law, displaying linearity across various magnetic fields and temperatures. Our work advocates for a cautious approach in distinguishing between genuine current-induced nonequilibrium quantum states and thermal effects.

cond-mat.mtrl-sci↗

arXiv2024

Advanced Large Language Model (LLM)-Driven Verilog Development: Enhancing Power, Performance, and Area Optimization in Code Synthesis

The increasing use of Advanced Language Models (ALMs) in diverse sectors, particularly due to their impressive capability to generate top-tier content following linguistic instructions, forms the core of this investigation. This study probes into ALMs' deployment in electronic hardware design, with a specific emphasis on the synthesis and enhancement of Verilog programming. We introduce an innovative framework, crafted to assess and amplify ALMs' productivity in this niche. The methodology commences with the initial crafting of Verilog programming via ALMs, succeeded by a distinct dual-stage refinement protocol. The premier stage prioritizes augmenting the code's operational and linguistic precision, while the latter stage is dedicated to aligning the code with Power-Performance-Area (PPA) benchmarks, a pivotal component in proficient hardware design. This bifurcated strategy, merging error remediation with PPA enhancement, has yielded substantial upgrades in the caliber of ALM-created Verilog programming. Our framework achieves an 81.37% rate in linguistic accuracy and 62.0% in operational efficacy in programming synthesis, surpassing current leading-edge techniques, such as 73% in linguistic accuracy and 46% in operational efficacy. These findings illuminate ALMs' aptitude in tackling complex technical domains and signal a positive shift in the mechanization of hardware design operations.

cs.LG↗