arXiv subjects

Yaoxin Li

Publications and source records attributed to Yaoxin Li.

13 recordsLinked to original sources

arXiv2024

Towards the Quantized Anomalous Hall effect in AlO$_x$-capped MnBi$_2$Te$_4$

The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi$_2$Te$_4$ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as realizing quantized transport at zero magnetic fields depends critically on fabricating high-quality device. In this article, we address the detrimental influences of fabrication on MnBi$_2$Te$_4$ by simply depositing an AlO$_x$ thin layer on the surface prior to fabrications. Optical contrast and magnetotransport measurements on over 50 samples demonstrate that AlO$_x$ can effectively preserve the pristine state of the samples and significantly enhance the anomalous Hall effect towards quantization. Scaling analysis reveals the Berry curvature dominated mechanism of the anomalous Hall effect at various magnetic configurations. By adjusting the gate voltage, we uncover a gate independent antiferromagnetism in MnBi$_2$Te$_4$. Our experiment not only pave the way for fabricating high-quality transport devices but also advance the exploration of exotic quantum physics in 2D materials.

cond-mat.mtrl-sci↗

arXiv2024

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx capping layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2023

MCTS: A Multi-Reference Chinese Text Simplification Dataset

Text simplification aims to make the text easier to understand by applying rewriting transformations. There has been very little research on Chinese text simplification for a long time. The lack of generic evaluation data is an essential reason for this phenomenon. In this paper, we introduce MCTS, a multi-reference Chinese text simplification dataset. We describe the annotation process of the dataset and provide a detailed analysis. Furthermore, we evaluate the performance of several unsupervised methods and advanced large language models. We additionally provide Chinese text simplification parallel data that can be used for training, acquired by utilizing machine translation and English text simplification. We hope to build a basic understanding of Chinese text simplification through the foundational work and provide references for future research. All of the code and data are released at https://github.com/blcuicall/mcts/.

cs.CL↗

arXiv2023

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi$_2$Te$_4$

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

cond-mat.mes-hall↗

arXiv2021

Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$

The recently discovered antiferromagnetic topological insulator MnBi$_2$Te$_4$ hosts a variety of exotic topological quantum phases such as the axion insulator and Chern insulator states. Here we report systematic gate voltage dependent magneto transport studies in six septuple-layer MnBi$_2$Te$_4$. In p-type carrier regime, we observe positive linear magnetoresistance when MnBi$_2$Te$_4$ is polarized in the ferromagnetic state by an out-of-plane magnetic field. Whereas in n-type regime, distinct negative magnetoresistance behaviors are observed. The magnetoresistance in both regimes is highly robust against temperature even up to the Néel temperature. Within the antiferromagnetic state, the behavior of magnetoresistance exhibits a transition from negative to positive as applying a gate voltage. The boundaries between different magnetoresistance behaviors in the experimental phase diagram can be explicitly characterized by the gate-voltage-independent magnetic fields that denotes the processes of the spin-flop transition. The rich transport phenomena demonstrate the intricate interplay between topology, magnetism and dimensionality in MnBi$_2$Te$_4$.

cond-mat.mes-hall↗

arXiv2021

Class Semantics-based Attention for Action Detection

Action localization networks are often structured as a feature encoder sub-network and a localization sub-network, where the feature encoder learns to transform an input video to features that are useful for the localization sub-network to generate reliable action proposals. While some of the encoded features may be more useful for generating action proposals, prior action localization approaches do not include any attention mechanism that enables the localization sub-network to attend more to the more important features. In this paper, we propose a novel attention mechanism, the Class Semantics-based Attention (CSA), that learns from the temporal distribution of semantics of action classes present in an input video to find the importance scores of the encoded features, which are used to provide attention to the more useful encoded features. We demonstrate on two popular action detection datasets that incorporating our novel attention mechanism provides considerable performance gains on competitive action detection models (e.g., around 6.2% improvement over BMN action detection baseline to obtain 47.5% mAP on the THUMOS-14 dataset), and a new state-of-the-art of 36.25% mAP on the ActivityNet v1.3 dataset. Further, the CSA localization model family which includes BMN-CSA, was part of the second-placed submission at the 2021 ActivityNet action localization challenge. Our attention mechanism outperforms prior self-attention modules such as the squeeze-and-excitation in action detection task. We also observe that our attention mechanism is complementary to such self-attention modules in that performance improvements are seen when both are used together.

cs.CV↗

arXiv2021

Magnetic-field-induced robust zero Hall plateau state in MnBi$_2$Te$_4$ Chern insulator

The intrinsic antiferromagnetic topological insulator MnBi2Te4 provides an ideal platform for exploring exotic topological quantum phenomena. Recently, the Chern insulator and axion insulator phases have been realized in few-layer MnBi2Te4 devices at low magnetic field regime. However, the fate of MnBi2Te4 in high magnetic field has never been explored in experiment. In this work, we report transport studies of exfoliated MnBi2Te4 flakes in pulsed magnetic fields up to 61.5 T. In the high-field limit, the Chern insulator phase with Chern number C = -1 evolves into a robust zero Hall resistance plateau state. Nonlocal transport measurements and theoretical calculations demonstrate that the charge transport in the zero Hall plateau state is conducted by two counter-propagating edge states that arise from the combined effects of Landau levels and large Zeeman effect in strong magnetic fields. Our result demonstrates the intricate interplay among intrinsic magnetic order, external magnetic field, and nontrivial band topology in MnBi2Te4.

cond-mat.mes-hall↗

arXiv2021

Giant nonlocal edge conduction in the axion insulator state of MnBi2Te4

The recently discovered antiferromagnetic (AFM) topological insulator (TI) MnBi2Te4 represents a versatile material platform for exploring exotic topological quantum phenomena in nanoscale devices. It has been proposed that even-septuple-layer (even-SL) MnBi2Te4 can host helical hinge currents with unique nonlocal behavior, but experimental confirmation is still lacking. In this work, we report transport studies of exfoliated MnBi2Te4 flakes with varied thicknesses down to the few-nanometer regime. We observe giant nonlocal transport signals in even-SL devices when the system is in the axion insulator state but vanishingly small nonlocal signal in the odd-SL devices at the same magnetic field range. In conjunction with theoretical calculations, we demonstrate that the nonlocal transport is via the helical edge currents mainly distributed at the hinges between the side and top/bottom surfaces. The helical edge currents in the axion insulator state may find unique applications in topological quantum devices.

cond-mat.mtrl-sci↗

arXiv2021

Large Transport Gap Modulation in Graphene via Electric Field Controlled Reversible Hydrogenation

Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One approach to introduce an energy gap is to use hydrogenation reaction, which changes graphene into insulating graphane with sp3 bonding. Here we show that an electric field can be used to control conductor-to-insulator transitions in microscale graphene via a reversible electrochemical hydrogenation in an organic liquid electrolyte containing dissociative hydrogen ions. The fully hydrogenated graphene exhibits a lower limit sheet resistance of 200 Gohm/sq, resulting in graphene field-effect transistors with on/off current ratios of 10^8 at room temperature. The devices also exhibit high endurance, with up to one million switching cycles. Similar insulating behaviours are also observed in bilayer graphene, while trilayer graphene remains highly conductive after the hydrogenation. Changes in the graphene lattice, and the transformation from sp2 to sp3 hybridization, is confirmed by in-situ Raman spectroscopy, supported by first-principles calculations.

cond-mat.mtrl-sci↗

arXiv2021

Spin glass state in layered compound MnSb2Te4

As a sister compound and isostructural of MnBi2Te4, the high quality MnSb2Te4 single crystals are grown via solid-state reaction where prolonged annealing and narrow temperature window play critical roles on account of its thermal metastability. X-ray diffraction analysis on MnSb2Te4 single crystals reveals pronounced cation intermixing, 28.9(7)% Sb antisite defects on the Mn (3a) site and 19.3(6)% Mn antisite defects on the Sb (6c) site, compared with MnBi2Te4. Unlike antiferromagnetic (AFM) nature MnBi2Te4, MnSb2Te4 contains magnetic and antiferromagnetic competition and exhibits a spin glass (SG) state below 24 K. Its magnetic hysteresis, anisotropy, and relaxation process are investigated in detail with DC and AC magnetization measurements. Moreover, anomalous Hall effect as a p-type conductor is demonstrated through transport measurements. This work grants MnSb2Te4 a possible access to the future exploration of exotic quantum physics by removing the odd/even layer number restraint in intrinsic AFM MnBi2Te4-family materials as a result of the crossover between its magnetism and potential topology in the Sb-Te layer.

cond-mat.mtrl-sci↗

arXiv2020

Gumbel-softmax-based Optimization: A Simple General Framework for Optimization Problems on Graphs

In computer science, there exist a large number of optimization problems defined on graphs, that is to find a best node state configuration or a network structure such that the designed objective function is optimized under some constraints. However, these problems are notorious for their hardness to solve because most of them are NP-hard or NP-complete. Although traditional general methods such as simulated annealing (SA), genetic algorithms (GA) and so forth have been devised to these hard problems, their accuracy and time consumption are not satisfying in practice. In this work, we proposed a simple, fast, and general algorithm framework based on advanced automatic differentiation technique empowered by deep learning frameworks. By introducing Gumbel-softmax technique, we can optimize the objective function directly by gradient descent algorithm regardless of the discrete nature of variables. We also introduce evolution strategy to parallel version of our algorithm. We test our algorithm on three representative optimization problems on graph including modularity optimization from network science, Sherrington-Kirkpatrick (SK) model from statistical physics, maximum independent set (MIS) and minimum vertex cover (MVC) problem from combinatorial optimization on graph. High-quality solutions can be obtained with much less time consuming compared to traditional approaches.

cs.LG↗

arXiv2020

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

The intricate interplay between nontrivial topology and magnetism in two-dimensional (2D) materials has led to the emergence of many novel phenomena and functionalities. An outstanding example is the quantum anomalous Hall (QAH) effect, which was realized in magnetically doped topological insulators (TIs) in the absence of magnetic field. Recently, the layered van der Waals compound MnBi2Te4 has been theoretically predicted and experimentally verified to be a TI with interlayer antiferromagnetic (AFM) order. It is a rare stoichiometric material with coexisting topology and magnetism, thus represents a perfect building block for complex topological-magnetic structures. Here we investigate the quantum transport behaviors of both bulk crystal and exfoliated MnBi2Te4 flakes in a field effect transistor geometry. In the 6 septuple layers (SLs) device tuned into the insulating regime, we observe a large longitudinal resistance and zero Hall plateau, which are characteristic of the axion insulator state. The robust axion insulator state occurs in zero magnetic field, over a wide magnetic field range, and at relatively high temperatures. Moreover, a moderate magnetic field drives a quantum phase transition from the axion insulator phase to a Chern insulator phase with zero longitudinal resistance and quantized Hall resistance h/e2 (h is the Plank constant and e is the elemental charge). These results pave the road for using even-number-SL MnBi2Te4 to realize the quantized topological magnetoelectric effect and axion electrodynamics in condensed matter systems.

cond-mat.mes-hall↗

arXiv2018

Quantum anomalous Hall multilayers grown by molecular beam epitaxy

Quantum anomalous Hall (QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped (Bi,Sb)$_2$Te$_3$ topological insulator and CdSe normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance $h/Ne$$^2$, where $h$ is the Planck's constant, $e$ is the elementary charge and $N$ is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator.

cond-mat.mtrl-sci↗