SearcharxivSearch

arXiv subjects

Yaoyao Chen

Publications and source records attributed to Yaoyao Chen.

7 recordsLinked to original sources

Superconducting proximity effect in a strongly correlated charge-transfer insulator

Proximity-induced superconductivity in strongly correlated insulators provides a versatile route for engineering quantum states of matter and artificial systems with tailored functionalities. However, microscopic interplay between superconductivity and correlated insulating states remains poorly understood. Here we use ultralow-temperature scanning tunnelling microscopy (STM) to systemically investigate superconducting proximity effects in a charge-transfer insulator. Via STM tip manipulation, atomically sharp lateral junctions composed of superconducting monolayer H-NbSe2 and charge-transfer insulating monolayer T-NbSe2 are constructed, enabling direct access to tunable coupling regimes. In the weak-coupling regime, there is a robust proximity-induced superconducting gap in T-NbSe2, with a reduced gap value relative to that of H-NbSe2. Upon entering the strong-coupling regime, T-NbSe2 exhibits a superconducting gap comparable to that of H-NbSe2, accompanied by pronounced particle-hole-symmetric in-gap bound states, consistent with Yu-Shiba-Rusinov-like excitations. These findings establish monolayer H/T-NbSe2 lateral junctions as a model platform for elucidating superconducting proximity effects in strongly correlated charge-transfer insulators.

cond-mat.supr-con

Unconditional energy stable hybrid IEQ-FEMs for the Cahn-Hilliard-Navier-Stokes equations

We investigate two unconditionally energy stable invariant energy quadratization (IEQ) finite element methods (FEMs) [Chen et al. Numerical Algorithms, DOI: 10.1007/s11075-024-01910-z, 2024] for solving the Cahn-Hilliard-Navier-Stokes (CHNS) equations. The time discretization of these IEQ-FEMs is based on the first- and second-order backward differentiation methods. \textcolor{black}{The auxiliary energy function introduced by the IEQ approach, modeling the square root of the nonlinear part of the energy, does not belong to the finite element space used for the spatial discretization.} These methods offer distinct advantages. Consequently, we propose a new hybrid IEQ-FEM that combines the strengths of both schemes, offering computational efficiency and unconditional energy stability in the finite element space. We provide rigorous proofs of mass conservation and energy dissipation for the proposed IEQ-FEMs. Several numerical experiments are presented to validate the accuracy, efficiency, and solution properties of the proposed method.

math.NA

Unconditionally energy stable IEQ-FEMs for the Cahn-Hilliard equation and Allen-Cahn equation

In this paper, we present several unconditionally energy-stable invariant energy quadratization (IEQ) finite element methods (FEMs) with linear, first- and second-order accuracy for solving both the Cahn-Hilliard equation and the Allen-Cahn equation. For time discretization, we compare three distinct IEQ-FEM schemes that position the intermediate function introduced by the IEQ approach in different function spaces: finite element space, continuous function space, or a combination of these spaces. Rigorous proofs establishing the existence and uniqueness of the numerical solution, along with analyses of energy dissipation for both equations and mass conservation for the Cahn-Hilliard equation, are provided. The proposed schemes' accuracy, efficiency, and solution properties are demonstrated through numerical experiments.

math.NA

Recovery type a posteriori error estimation of an adaptive finite element method for Cahn--Hilliard equation

In this paper, we derive a novel recovery type a posteriori error estimation of the Crank-Nicolson finite element method for the Cahn--Hilliard equation. To achieve this, we employ both the elliptic reconstruction technique and a time reconstruction technique based on three time-level approximations, resulting in an optimal a posteriori error estimator. We propose a time-space adaptive algorithm that utilizes the derived a posteriori error estimator as error indicators. Numerical experiments are presented to validate the theoretical findings, including comparing with an adaptive finite element method based on a residual type a posteriori error estimator.

math.NA

Recent advances of defect-induced spin and valley polarized states in graphene

Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale, and hence, lead to rich quantum states, highlighting promising directions for spintronics and valleytronics. In this article, we mainly review the recent scanning tunneling microscopy (STM) advances on the spin and/or valley polarized states induced by an individual atomic-scale defect in graphene, including a single-carbon vacancy, a nitrogen-atom dopant, and a hydrogen-atom chemisorption. Lastly, we give a perspective in this field.

cond-mat.mes-hall

Atomic-Scale Visualization of Chiral Charge Density Wave States and Their Reversible Transition

Chirality is essential for various amazing phenomena in life and matter. However,chirality and its switching in electronic superlattices, such as charge density wave(CDW) arrays, remain elusive. In this study, we characterize the chirality transition with atom-resolution imaging in a single-layer NbSe2 CDW pattern by technique of scanning tunneling microscopy. The atomic lattice of the CDW array is found continuous and intact although its chirality is switched. Several intermediate states are tracked by time-resolved imaging, revealing the fast and dynamic chirality transition. Importantly, the switching is reversibly realized with an external electric-field. Our findings unveil the delicate transition process of chiral CDW array in a 2D crystal down to the atomic scale and may be applicable for future nanoscale devices.

cond-mat.mtrl-sci

Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2

Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to two-dimensional (2D) limit. In this study, we utilize scanning tunneling microscopy/spectroscopy to investigate monolayer 1T-NbSe2 to elucidate the energy of the Mott upper Hubbard band (UHB), and reveal that the spin-polarized UHB is spatially distributed away from the dz2 orbital at the center of the CDW unit. Moreover, the UHB shows a root3 x root3 R30° periodicity in addition to the typically observed CDW pattern. Furthermore, a pattern similar to the CDW order is visible deep in the Mott gap, exhibiting CDW without contribution of the Mott Hubbard band. Based on these findings in monolayer 1T-NbSe2, we provide novel insights into the relation between the correlated and collective electronic structures in monolayer 2D systems.

cond-mat.str-el