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Yaroslav Gerasimenko

Publications and source records attributed to Yaroslav Gerasimenko.

7 recordsLinked to original sources

Non-equilibrium quantum domain reconfiguration dynamics in a two-dimensional electronic crystal: experiments and quantum simulations

Relaxation dynamics of complex many-body quantum systems brought out of equilibrium and subsequently trapped into metastable states is a very active field of research from both the theoretical and experimental point of view with implications in a wide array of topics from macroscopic quantum tunnelling and nucleosynthesis to non-equilibrium superconductivity and new energy-efficient memory devices. Understanding the dynamics of such systems is crucial for exploring fundamental aspects of many-body non-equilibrium quantum physics. In this work we investigate quantum domain reconfiguration dynamics in the electronic superlattice of a quantum material where classical dynamics is topologically constrained. The crossover from temperature to quantum fluctuation dominated dynamics in the context of environmental noise is investigated by directly observing charge reconfiguration with time-resolved scanning tunneling microscopy. The process is modelled using a programmable superconducting quantum simulator in which qubit interconnections correspond directly to the microscopic interactions between electrons in the quantum material. Crucially, the dynamics of both the experiment on the quantum material and the simulation is driven by spectrally similar pink noise. We find that the simulations reproduce the emergent time evolution and temperature dependence of the experimentally observed electronic domain dynamics remarkably well. The combined experiment and simulations lead to a better understanding of noise-driven quantum dynamics in open quantum systems. From a practical viewpoint, the results are important for understanding the origin of the retention time in non-volatile memory devices such as those based on 1T-TaS2.

quant-ph

Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.

cond-mat.str-el

Quantum billiards with correlated electrons confined in triangular transition metal dichalcogenide monolayer nanostructures created by laser quench

Forcing systems though fast non-equilibrium phase transitions offers the opportunity to study new states of quantum matter that self-assemble in their wake. Here we study the quantum interference effects of correlated electrons confined in monolayer quantum nanostructures, created by femtosecond laser-induced quench through a first-order polytype structural transition in a layered transition-metal dichalcogenide material. Scanning tunnelling microscopy of the electrons confined within equilateral triangles, whose dimensions are a few crystal unit cells on the side, reveals that the trajectories are strongly modified from free-electron states both by electronic correlations and confinement. Comparison of experiments with theoretical predictions of strongly correlated electron behaviour reveals that the confining geometry destabilizes the Wigner/Mott crystal ground state, resulting in mixed itinerant and correlation-localized states intertwined on a length scale of 1 nm. Occasionally, itinerant-electron states appear to follow quantum interferences which are suggestive of classical trajectories (quantum scars). The work opens the path toward understanding the quantum transport of electrons confined in atomic-scale monolayer structures based on correlated-electron-materials.

cond-mat.str-el

A time-domain phase diagram of metastable states in a charge ordered quantum material

Metastable self-organized electronic states in quantum materials are of fundamental importance, displaying emergent dynamical properties that may be used in new generations of sensors and memory devices. Such states are typically formed through phase transitions under non-equilibrium conditions and the final state is reached through processes that span a large range of timescales. By using time-resolved optical techniques and femtosecond-pulse-excited scanning tunneling microscopy (STM), the evolution of the metastable states in the quasi-two-dimensional dichalcogenide 1T-TaS2 is mapped out on a temporal phase diagram using the photon density and temperature as control parameters on timescales ranging from 10^(-12) to 10^3 s. The introduction of a time-domain axis in the phase diagram enables us to follow the evolution of metastable emergent states created by different phase transition mechanisms on different timescales, thus enabling comparison with theoretical predictions of the phase diagram and opening the way to understanding of the complex ordering processes in metastable materials.

cond-mat.str-el

Theoretical Modeling of the Non-equilibrium Amorphous State in 1T-TaS$_2$

1T-TaS$_2$ is known for it's remarkably complex phase diagram and it's unique long-lived metastable hidden (H) state. Recently, a novel metastable state has been discovered using higher fluences for photoexcitation than in the case of the H state. The state has been dubbed as amorphous (A) due to it's similarity to glass. Expanding on the work of Brazovskii and Karpov, we show that the A state can be successfully modelled with classical interacting polarons on a two-dimensional hexagonal lattice. We have found that the polaron configuration of the A state corresponds to a frustrated screened Coulomb system, where there is no order-disorder phase transition.

cond-mat.str-el

Mottness collapse without metallisation in the domain walls of triangular-lattice Mott insulator 1T-TaS$_2$

1T-TaS$_2$ is a charge-density-wave (CDW) compound with a Mott-insulating ground state. The metallic state obtained by doping, substitution or pulsed charge injection is characterized by an emergent CDW domain wall network, while single domain walls can be found in the pristine Mott state. Here we study whether and how the single walls become metallic. Tunneling spectroscopy reveals partial suppression of the Mott gap and the presence of in-gap states strongly localized at the domain-wall sites. Using the real-space dynamical mean field theory description of the strongly correlated quantum-paramagnet ground state we show that the local gap suppression follows from the increased hopping along the connected zig-zag chain of lattice sites forming the domain wall, and that full metallisation is preempted by the splitting of the quasiparticle band into bonding and antibonding sub-bands due to the structural dimerization of the wall, explaining the presence of the in-gap states and the low density of states at the Fermi level.

cond-mat.str-el

Ultrafast jamming of electrons into an amorphous entangled state

New emergent states of matter in quantum systems may be created under non-equilibrium conditions if - through many body interactions - its constituents order on a timescale which is shorter than the time required for the system to reach thermal equilibrium. Conventionally non-equilibrium ordering is discussed in terms of symmetry breaking, nonthermal order-disorder, and more recently quenched topological transitions. Here we report a fundamentally new and unusual metastable form of amorphous correlation-localized fermionic matter, which is formed in a new type of quantum transition at low temperature either by short pulse photoexcitation or by electrical charge injection in the transition metal dichalcogenide 1T-TaS2. Scanning tunnelling microscopy (STM) reveals a pseudo-amorphous packing of localized electrons within the crystal lattice that is significantly denser than its hexagonally ordered low-temperature ground state, or any other ordered states of the system. Remarkably, the arrangement is not random, but displays a hyperuniform spatial density distribution commonly encountered in classical jammed systems, showing no signs of aggregation or phase separation. Unexpectedly for a localized electron system, tunnelling spectroscopy and multi- STM-tip surface resistance measurements reveal that the overall state is gapless and conducting, which implies that localized and itinerant carriers are resonantly entangled. The amorphous localized electron subsystem can be understood theoretically to arise from strong correlations between polarons sparsely dispersed on a 2D hexagonal atomic lattice, while itinerant carriers act as a resonantly coupled reservoir distinct in momentum space.

cond-mat.str-el