arXiv subjects

Yasuhiko Arakawa

Publications and source records attributed to Yasuhiko Arakawa.

42 records · Page 3Linked to original sources

arXiv2010

Circularly-Polarized Light Emission from Semiconductor Planar Chiral Photonic Crystal

We proposed and demonstrated a scheme of surface emitting circularly polarized light source by introducing strong imbalance between left- and right-circularly polarized vacuum fields in an on-waveguide chiral grating structure. We observed circularly polarized spontaneous emission from InAs quantum dots embedded in the wave guide region of a GaAs-based structure. Obtained degree of polarization reaches as large as 25% at room temperature. Numerical calculation visualizes spatial profiles of the modification of vacuum field modes inside the structure with strong circular anisotropy.

cond-mat.mes-hall↗

arXiv2009

Investigation of the spectral triplet in strongly coupled quantum dot-nanocavity system

We experimentally investigated the excitation power dependence of a strongly coupled quantum dot (QD)-photonic crystal nanocavity system by photoluminescence (PL) measurements. At a low-excitation power regime, we observed vacuum Rabi doublet emission at QD-cavity resonance condition. With increasing excitation power, in addition to the doublet, a third emission peak appeared. This observed spectral change is unexpected from conventional atomic cavity quantum electrodynamics. The observations can be attributed to featured pumping processes in the semiconductor QD-cavity system.

cond-mat.other↗

arXiv2009

Photonic crystal nanocavity laser with a single quantum dot gain

We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain. The investigated nanocavities contain only 0.4 quantum dots on an average; an ultra-low density quantum dot sample (1.5 x 108 cm-2) is used so that a single quantum dot can be isolated from the surrounding quantum dots. Laser oscillation begins at a pump power of 42 nW under resonant condition, while the far-detuning conditions require ~145 nW for lasing. This spectral detuning dependence of laser threshold indicates substantial contribution of the single quantum dot to the total gain. Moreover, photon correlation measurements show a distinct transition from anti-bunching to Poissonian via bunching with the increase of the excitation power, which is also an evidence of laser oscillation with the single quantum dot.

cond-mat.other↗

arXiv2006

Near-field Optical Spectroscopy and Microscopy of Laterally Coupled Quantum Dots: Bonding and Antibonding States

We report on high-resolution photoluminescence (PL) spectroscopic and microscopic study of laterally coupled InAs/GaAs self-assembled quantum dots by using a low-temperature near-field scanning optical microscope. We have observed slightly split PL spectra, which are associated with the bonding (symmetric) and antibonding (antisymmetric) energy states between two coupled quantum dots, closely located each other as confirmed by spatial mapping of the PL intensity. The experimental results are in qualitative agreement with the simple theoretical calculations based on a two-dimensional potential model. This work may open the way to a simultaneous spectroscopy and microscopy study of laterally coupled quantum dots in a high-density quantum dot sample without any articulate sample fabrication.

cond-mat.mtrl-sci↗

arXiv2005

Controlling the Spontaneous Emission Rate of Single Quantum Dots in a 2D Photonic Crystal

We observe large spontaneous emission rate modification of individual InAs Quantum Dots (QDs) in 2D a photonic crystal with a modified, high-Q single defect cavity. Compared to QDs in bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase by up to a factor of 8. In contrast, off-resonant QDs indicate up to five-fold rate quenching as the local density of optical states (LDOS) is diminished in the photonic crystal. In both cases we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using Finite Difference Time Domain (FDTD) simulations and find good agreement with experiment.

quant-ph↗

arXiv2005

Photon correlation studies of single GaN quantum dots

We present measurements of the second-order coherence function on emission from single GaN quantum dots. In some cases a large degree of photon antibunching is observed, demonstrating isolation of a single quantum system. For a selected quantum dot, we study the dependence of photon antibunching on excitation power and temperature. Using pulsed excitation, we demonstrate an ultraviolet triggered single-photon source operating at a wavelength of 358 nm.

cond-mat.mes-hall↗