arXiv subjects

Yasuhiro Fukuma

Publications and source records attributed to Yasuhiro Fukuma.

At least 19 recordsLinked to original sources

arXiv2026

Observation of large perpendicular magnetic anisotropy and excessive polar magneto-optical effect in Pt/CoFeB/Ru tri-layer system

Heterostructures comprising ferromagnet (FM) and heavy metals (HM) with perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (iDMI) can host chiral domain walls and topological spin textures, making them highly promising for various spintronics applications. In this paper, we have investigated the magneto-optical properties, the anomalous Hall effect (AHE), and PMA of Pt/CoFeB/Ru multilayers engineered to possess significant iDMI. We utilized the Anomalous Hall effect (AHE), and the polar magneto-optical Kerr effect (p-MOKE), Hall response and the domain wall motion in Pt/CoFeB/Ru-systems. Both MOKE and AHE measurements confirm that the films maintain strong perpendicular magnetization for CoFeB thicknesses below 1.2 nm. The effective magnetic anisotropy K_{\mathrm{eff}} of 0.88 \times 10^6 erg/cm^3 has been achieved without any post-annealing, highlighting the high-quality interface in this multilayer design. The angular dependence of the switching field deviates from the conventional Kondorsky model and is well described using a modified Kondorsky formalism, capturing the role of field-induced domain-wall softening and pinning effects in the reversal process. Furthermore, p-MOKE microscopy imaging during the magnetization reversal process provides detailed insight into domain nucleation and subsequent domain-wall propagation. The observations reveal well-defined, stable magnetic domains that evolve coherently under the applied magnetic field. Such a behavior is expected in the system where interfacial DMI, PMA interact to stabilize the chiral N\'eel-type domain walls, which are essential for fast, low-power domain-wall motion driven by spin-orbit torques.

cond-mat.mtrl-sci↗

arXiv2025

Tunable exchange bias in Y$_3$Fe$_5$O$_{12}$ film on Gd$_3$Ga$_5$O$_{12}$

Ferrimagnetic Y$_3$Fe$_5$O$_{12}$ grown on the (001) surface of paramagnetic Gd$_3$Ga$_5$O$_{12}$ experiences an exchange bias field, which has been attributed to the magnetism of an interface layer between the two materials. We report here that when grown using sputtering and with lower post-annealing temperatures than in previous works, the blocking temperature of the interface magnetic layer is lowered to about 7 K, while still displaying a strong exchange bias. This exchange bias is then found to be tunable between its two extreme values by carefully varying the field cooling protocol. This is attributed to a slow and complex dynamics of the spins of the interface-layer when it is warmed up close to its blocking (or melting) temperature, which is reminiscent of a spin glass.

cond-mat.mtrl-sci↗

arXiv2025

Efficient spin-orbit torque driven magnetization switching of GdFe using phosphorus-implanted platinum layers

The capability of the spin-orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The efficiency of SOT generation is commonly quantified in terms of the spin Hall angle {\theta}_SH. In this work, we demonstrate experimentally that implanting platinum (Pt) with phosphorus (P), resulting in Pt (P) d, where d denotes the implantation dose, increases {\theta}_SH by a factor of 7, from 0.06 (d = 0) to 0.43 (d = 10*10^16 ions/cm^2). The enhanced {\theta}_SH, along with factors such as perpendicular magnetic anisotropy and resistivity, lead to reduction of the critical current density for switching the perpendicular magnetization of ferrimagnetic rare earth-transition metal alloy Gd26Fe74, by a factor of nearly 27, from 4.0*1011 A/m^2 (d = 0) to 1.5*10^10 A/m^2 (d = 10*10^16 ions/cm^2). Further, the switching current density at zero thermal fluctuations and thermal stability factor were evaluated and found to be 2.0*10^10 A/m^2 and 61.4 (d = 10*10^16 ions/cm^2), with the latter being sufficiently above the required threshold for commercial memory applications. Our results suggest that Pt (P) could be a strong candidate in realizing efficient SOT driven magnetization switching leading to the development of improved memory and logic devices in the future.

cond-mat.mtrl-sci↗

arXiv2024

Phase Binarization in Mutually Synchronized Bias Field-free Spin Hall Nano-oscillators for Reservoir Computing

Mutually coupled spin Hall nano-oscillators (SHNO) can exhibit binarized phase state, offering pathways to realize Ising machines and efficient neuromorphic hardware. Conventionally, phase binarization is achieved in coupled SHNOs via injecting an external microwave at twice of the oscillator frequency in presence of a biasing magnetic field. However, this technology poses potential challenges of higher energy consumption and complex circuit design. Moreover, fabrication-induced mismatch in SHNO dimensions may hinder mutual synchronization. Addressing these challenges, we demonstrate purely DC current-driven mutual synchronization and phase binarization of two non-identical nanoconstriction SHNOs without biasing magnetic field and microwave injection. We thoroughly investigate these phenomena and underlying mechanisms using micromagnetic simulation. We further demonstrate the bias field-free synchronized SHNO pair efficiently performing a reservoir computing benchmark learning task: sin and square wave classification, utilizing current tunable phase binarization. Our results showcase promising magnetization dynamics of coupled bias field-free SHNOs for future computing applications.

cond-mat.mes-hall↗

arXiv2024

Direct visualization of local magnetic domain dynamics in a 2D Van der Walls material/ferromagnet interface

Exploring new strategies for controlling the magnetic domain propagation is the key to realize ultrafast, high-density domain wall-based memory and logic devices for next generation computing. These strategies include strain modulation in multiferroic devices, geometric confinement and area-selective pinning of domain wall. 2D Van der Waals materials introduce localized modifications to the interfacial magnetic order, enabling control over the propagation of magnetic domains. Here, using Lorentz-Transmission Electron Microscopy (L-TEM) along with the Modified Transport of Intensity equations (MTIE), we demonstrate controlled domain expansion with in-situ magnetic field in a ferromagnet (Permalloy, NiFe) interfacing with a 2D Van der Waals material Graphene (Gr). The Gr/NiFe interface exhibits distinctive domain expansion rate with magnetic field selectively near the interface which is further analyzed using micromagnetic simulations. Our findings are crucial for comprehending direct visualization of interface controlled magnetic domain expansion, offering insights for developing future domain wall-based technology.

cond-mat.mtrl-sci↗

arXiv2023

Interfacial spintronic THz emission

The broken inversion symmetry at the ferromagnet (FM)/heavy-metal (HM) interface leads to spin-dependent degeneracy of the energy band, forming spin-polarized surface states. As a result, the interface serves as an effective medium for converting spin accumulation into two-dimensional charge current through the inverse Rashba-Edelstein effect. Exploring and assessing this spin-to-charge conversion (SCC) phenomenon at the FM/HM interface could offer a promising avenue to surpass the presumed limits of SCC in bulk HM layers. We utilize spintronic heterostructures as a platform to measure the spin-to-charge conversion (SCC) experienced by photoexcited spin currents. These heterostructures emit terahertz electric field when illuminated by femtosecond laser pulses, enabling us to quantitatively assess the ultrafast SCC process. Our results demonstrate a robust interfacial spin-to-charge conversion (iSCC) within a synthetic antiferromagnetic heterostructure, specifically for the NiFe/Ru/NiFe configuration, by isolating the SCC contribution originating from the interface itself, separate from the bulk heavy-metal (HM) region. Moreover, the iSCC at the NiFe/Ru interface is discovered to be approximately 27% of the strength observed in the highest spin-Hall conducting heavy-metal, Pt. Our results thus highlight the significance of interfacial engineering as a promising pathway for achieving efficient ultrafast spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Unconventional spin polarization at Argon ion milled SrTiO3 Interfaces

Interfacial two-dimensional electron gas (2DEG) formed at the perovskite-type oxide, such as SrTiO3, has attracted significant attention due to its properties of ferromagnetism, superconductivity, and its potential application in oxide-based low-power consumption electronics. Recent studies have investigated spin-to-charge conversion at the STO interface with different materials, which could affect the efficiency of this 2DEG interface. In this report, we presented an Ar^+ ion milling method to create a 2DEG at STO directly by inducing oxygen vacancies. To quantify the spin-to-charge conversion of this interface, we measured the angular-dependent spin-torque ferromagnetic resonance (ST-FMR) spectra, revealing an unconventional spin polarization at the interface of Argon ion-milled STO and NiFe. Furthermore, a micromagnetic simulation for angular-dependent spin-torque ferromagnetic resonance (ST-FMR) has been performed, confirming the large unconventional spin polarization at the interface.

physics.app-ph↗

arXiv2023

Dense plasma irradiated platinum with improved spin Hall effect

The impurity incorporation in host high-spin orbit coupling materials like platinum has shown improved charge-to-spin conversion by modifying the up-spin and down-spin electron trajectories by bending or skewing them in opposite directions. This enables efficient generation, manipulation, and transport of spin currents. In this study, we irradiate the platinum with non-focus dense plasma to incorporate the oxygen ion species. We systematically analyze the spin Hall angle of the oxygen plasma irradiated Pt films using spin torque ferromagnetic resonance. Our results demonstrate a 2.4 times enhancement in the spin Hall effect after plasma treatment of Pt as compared to pristine Pt. This improvement is attributed to the introduction of disorder and defects in the Pt lattice, which enhances the spin-orbit coupling and leads to more efficient charge-to-spin conversion without breaking the spin-orbit torque symmetries. Our findings offer a new method of dense plasma-based modification of material for the development of advanced spintronic devices based on Pt and other heavy metals.

cond-mat.mtrl-sci↗

arXiv2023

Interfacial origin of unconventional spin-orbit torque in Py/$\gamma-$IrMn$_{3}$

Angle-resolved spin-torque ferromagnetic resonance measurements are carried out in heterostructures consisting of Py (Ni$_{81}$Fe$_{19}$) and a noncollinear antiferromagnetic quantum material $\gamma-$IrMn$_{3}$. The structural characterization reveals that $\gamma-$IrMn$_{3}$ is polycrystalline in nature. A large exchange bias of 158~Oe is found in Py/$\gamma-$IrMn$_{3}$ at room temperature, while $\gamma-$IrMn$_{3}$/Py and Py/Cu/$\gamma-$IrMn$_{3}$ exhibited no exchange bias. Regardless of the exchange bias and stacking sequence, we observe a substantial unconventional out-of-plane anti-damping torque when $\gamma-$IrMn$_{3}$ is in direct contact with Py. The magnitude of the out-of-plane spin-orbit torque efficiency is found to be twice as large as the in-plane spin-orbit torque efficiency. The unconventional spin-orbit torque vanishes when a Cu spacer is introduced between Py and $\gamma-$IrMn$_{3}$, indicating that the unconventional spin-orbit torque in this system originates at the interface. These findings are important for realizing efficient antiferromagnet-based spintronic devices via interfacial engineering.

cond-mat.mtrl-sci↗

arXiv2022

Secondary spin current driven efficient THz spintronic emitters

Femtosecond laser-induced photoexcitation of ferromagnet (FM)/heavy metal (HM) heterostructures have attracted attention by emitting broadband terahertz frequencies. The phenomenon relies on the formation of ultrafast spin current, which is largely attributed to the direct photoexcitation of the FM layer. However, we reveal that during the process, the FM layer also experiences a secondary excitation led by the hot electrons from the HM layer that travel across the FM/HM interface and transfer additional energy in the FM. Thus, the generated secondary spins enhance the total spin current formation and lead to amplified spintronic terahertz emission. The results also emphasize the significance of the secondary spin current, which even exceeds the primary spin currents when FM/HM heterostructures with thicker HM are used. An analytical model is developed to provide deeper insights into the microscopic processes within the individual layers, underlining the generalized ultrafast superdiffusive spin-transport mechanism.

cond-mat.mtrl-sci↗

arXiv2022

Room temperature charge-to-spin conversion from q-2DEG at SrTiO3-based interfaces

Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient charge-spin current interconversion. In this article, to gain insight into the mechanism of the charge-spin current interconversion at the oxide-based 2DEG, we focused on conducting interfaces between insulating SrTiO3 and two types of aluminium-based amorphous insulators, namely SrTiO3/AlN and SrTiO3/Al2O3, and estimated their charge-spin conversion efficiency, {\theta}_cs. The two types of amorphous insulators were selected to explicitly probe the overlooked contribution of oxygen vacancy to the {\theta}_cs. We proposed a mechanism to explain results of spin-torque ferromagnetic resonance (ST-FMR) measurements and developed an analysis protocol to reliably estimate the {\theta}_cs of the oxide based 2DEG. The resultant {\theta}_cs/t, where t is the thickness of the 2DEG, were estimated to be 0.244 nm-1 and 0.101 nm-1 for the SrTiO3/AlN and SrTiO3/Al2O3, respectively, and they are strikingly comparable to their crystalline counterparts. Furthermore, we also observe a large direct current modulation of resonance linewidth in SrTiO3/AlN samples, confirming its high {\theta}_cs and attesting an oxygen-vacancy-enabled charge-spin conversion. Our findings emphasize the defects' contribution to the charge-spin interconversion, especially in the oxide-based low dimensional systems, and provide a way to create and enhance charge-spin interconversion via defect engineering.

cond-mat.mtrl-sci↗

arXiv2022

Disentanglement of intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt

The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in damping-like torque efficiency {\theta}_DL due to the modified SHE, but the mechanism behind this enhancement is not clear. In this paper, we study {\theta}_DL at different temperatures (100-293 K) to disentangle the intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt. We observe a crossover of intrinsic to extrinsic side-jump mechanism as the implantation dose increases from 2*10^16 ions/cm2 to 1*10^17 ions/cm2. A sudden decrease in the intrinsic spin Hall conductivity is counterbalanced by the increase in the side-jump induced SHE efficiency. These results conclude that studying {\theta}_DL as a function of implantation dose, and also as a function of temperature, is important to understand the physical mechanism contributing to SHE, which has so far been unexplored in incorporating non-metallic element in 5d transition metals.

cond-mat.mtrl-sci↗

arXiv2021

Electric-field-induced parametric excitation of exchange magnons in a CoFeB/MgO junction

Electric-field controlled magnetization dynamics is an important integrant in low power spintronic devices. In this letter, we demonstrate electric-field induced parametric excitation for CoFeB/MgO junctions by using interfacial in-plane magnetic anisotropy. When the in-plane magnetic anisotropy and the external magnetic field are parallel to each other, magnons are efficiently excited by using electric-field induced parametric excitation. Its wavelength and wavenumber are tuned by changing input power and frequency of the applied voltage. A generalized phenomenological model is developed to explain the underlying role of the electric-field torque. Electrical excitation with no Joule heating offers a good opportunity for developing magnonic devices and exploring various nonlinear dynamics in magnetic systems.

cond-mat.mes-hall↗

arXiv2021

Active Magnetoelectric Control of Terahertz Spin Current

Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and ferromagnet heterostructure provides the potential avenue to control the spin dynamics efficiently utilizing the magnetoelectric coupling. The demonstration of the electric field control of spin dynamics has so far been limited up to gigahertz frequencies. Here, we demonstrate the electric field mediated piezoelectric strain control of photogenerated THz spin current pulse from a multiferroic spintronic emitter. The phase reversal of the THz spin current pulse is obtained from the combined effect of piezoelectric strain and a small constant magnetic field applied opposite to the initial magnetization of the ferromagnet. The piezoelectric strain-controlled phase switching of THz spin current thus opens a door to develop efficient strain engineered scalable on-chip THz spintronics devices.

physics.app-ph↗

arXiv2017

Important role of magnetization precession angle measurement in inverse spin Hall effect induced by spin pumping

Here, we investigate spin Hall angle of Pt in Ni80Fe20/Pt bilayer system by using a broadband spin pumping and inverse spin Hall effect measurement. An out-of-plane excitation geometry with application of external magnetic field perpendicular to the charge current direction is utilized in order to suppress unwanted galvanomagnetic effects. Magnetization precession angle on ferromagnetic resonance for wide excitation frequency range (4-14 GHz) is estimated from the rectification voltage of anisotropic magnetoresistance (AMR) and a conventional method of using microwave power in a coplanar waveguide. A marked difference in the precession angle profiles for the different methods is observed, resulting in the large variation in estimated values of spin current density at Ni80Fe20/Pt interface. The frequency dependence of the spin current density estimated using AMR effect is found to be similar to that of the inverse spin Hall voltage. We obtain the frequency-invariant spin Hall angle of 0.067.

cond-mat.mtrl-sci↗

arXiv2015

Spin relaxation characteristics in Ag nanowire covered with various oxides

We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10 K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag and Hf. Surprisingly the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.

cond-mat.mtrl-sci↗

arXiv2013

5d transition metal oxide IrO2 as a material for spin current detection

Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble metals such as Pt and Pd, and also Cu-based alloys, owing to the large direct spin Hall effect, have been regarded as potential materials for a spin-current injector. Those materials, however, are not promising as a spin-current detector based on inverse spin Hall effect. Their spin Hall resistivity rho_SH, representing the performance as a detector, is not large enough mainly due to their low charge resistivity. Here we demonstrate that heavy transition metal oxides can overcome such limitations inherent to metal-based spintronics materials. A binary 5d transition metal oxide IrO2, owing to its large resistivity as well as a large spin-orbit coupling associated with 5d character of conduction electrons, was found to show a gigantic rho_SH ~ 38 microohm cm at room temperature, one order of magnitude larger than those of noble metals and Cu-based alloys and even comparable to those of atomic layer thin film of W and Ta.

cond-mat.mes-hall↗

arXiv2012

Towards coherent spin precession in pure-spin current

Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing frequent collisions and these events lead to a broad distribution of the dwell time in a transport channel between the injector and the detector. Here we show the lateral spin-valves with dual injectors enable us to detect a genuine in-plane precession signal from the Hanle effect, demonstrating the phase coherency in the in-plane precession is improved with an increase of the channel length. The coherency in the spin precession shows a universal behavior as a function of the normalized separation between the injector and the detector in material-independent fashion for metals and semiconductors including graphene.

cond-mat.mes-hall↗