arXiv subjects

Yating Sha

Publications and source records attributed to Yating Sha.

7 recordsLinked to original sources

arXiv2026

Layer-Number-Controlled Symmetry Breaking and Surface-State Transport in Rhombohedral Graphene Multilayers

Rhombohedral multilayer graphene hosts layer-polarized flat bands, providing an intriguing platform for correlated and topological electronic states; however, the role of layer number in governing symmetry breaking and surface screening remains elusive. Here we prepare rhombohedral graphene multilayers and systematically conduct electrical transport measurements. We uncover an unconventional layer dependence of phase transitions: the critical displacement field (D$_{c}$) for the layer-antiferromagnetic (LAF)-to-semimetal transitions remains constant across tetralayer to hexalayer graphene, whereas the D$_{c}$ for semimetal-to-layer-polarized-insulator (LPI) transition increases with layer number, defying unscreened Coulomb interaction models. In hexalayer graphene, surface-state-dominated transport emerges, with Landau levels (LLs) and resistive peaks selectively controlled by adjacent gates, a signature of strong interlayer screening absent in thinner stacks. High magnetic fields reveal valley-layer-locked LLs and dissipative states possibly from interlayer backscattering, highlighting the presence of decoupled surface states. Our findings establish layer number as a key tuning knob for engineering correlated and topological phases in rhombohedral graphene multilayers.

cond-mat.mes-hall↗

arXiv2026

Superconductivity in non-centrosymmetric rhombohedral NbSe2

Crystal stacking offers a powerful yet underexplored route to engineer symmetry in layered superconductors. Here we report superconductivity in rhombohedral-stacked NbSe2 (3R-NbSe2), a non-centrosymmetric polytype in which global inversion symmetry is removed by stacking alone. Using comprehensive structural, transport, magnetic, and thermodynamic measurements, we establish superconductivity as a bulk property of the 3R phase and find that the in-plane upper critical field exceeds the Pauli paramagnetic limit, indicating the persistence of strong Ising-type spin-orbit coupling. Unlike the thickness-dependent superconductivity in centrosymmetric 2H-NbSe2, the superconducting transition temperature in 3R-NbSe2 shows little dependence on layer number but exhibits an unusually strong sensitivity to disorder. We further observe strongly enhanced nonlinear optical and electrical responses near the superconducting transition, consistent with stacking-induced inversion-symmetry breaking. Our results identify 3R-NbSe2 as a single-phase platform in which stacking engineering reshapes superconductivity and enables nonlinear transport phenomena in layered materials.

cond-mat.supr-con↗

arXiv2025

Cascade of Even-Denominator Fractional Quantum Hall States in Mixed-Stacked Multilayer Graphene

The fractional quantum Hall effect (FQHE), particularly at half-filling of Landau levels, provides a unique window into topological phases hosting non-Abelian excitations. However, experimental platforms simultaneously offering large energy gaps, delicate tunability, and robust non-Abelian signatures remain scarce. Here, we report the observation of a cascade of even-denominator FQH states at filling factors ${\nu}$ = ${-5/2}$, ${-7/2}$, ${-9/2}$, ${-11/2}$, and ${-13/2}$, alongside numerous odd-denominator states in mixed-stacked pentalayer graphene, a previously unexplored system characterized by intertwined quadratic and cubic band dispersions. These even-denominator states, representing the highest filling half-filled states reported so far in the zeroth Landau level (ZLL), emerge from two distinct intra-ZLL and exhibit unprecedented displacement field tunability driven by LL crossings in the hybridized multiband structure. At half fillings, continuous quasiparticle phase transitions between paired FQH states, magnetic Bloch states, and composite Fermi liquids are clearly identified upon tuning external fields. Numerical calculations, revealing characteristic sixfold ground-state degeneracy and chiral graviton spectral analysis, suggest the observed even-denominator FQH states belong to the non-Abelian Moore-Read type. These results establish mixed-stacked multilayer graphene as a rich and versatile crystalline platform for exploring tunable correlated topological phases.

cond-mat.mes-hall↗

arXiv2025

Intrinsic layer polarization and multi-flatband transport in non-centrosymmetric mixed-stacked multilayer graphene

Graphene multilayers exhibit electronic spectra that depend sensitively on both the number of layers and their stacking order. Beyond trilayer graphene, mixed stacking sequences (alternating Bernal and rhombohedral layers) give rise to multiple coexisting low-energy bands. Here we investigate ABCBC-stacked pentalayer graphene, a less-studied non-centrosymmetric mixed sequence. This stacking can be regarded as an ABC (rhombohedral) trilayer on top of an AB (Bernal) bilayer, so its low-energy band structure contains both a cubic band and a parabolic band that hybridize. In transport measurements, we observe an intrinsic band gap at charge neutrality whose magnitude changes asymmetrically under an applied perpendicular displacement field. This behavior reflects the spontaneous layer polarization inherent to the broken inversion symmetry and mirror symmetry. By tuning the displacement field and carrier density, we drive multiple Lifshitz transitions in the Fermi surface topology and realize Landau levels with different degeneracies arising from the multi-flatband system. Remarkably, a v = -6 quantum Hall state emerges at an exceptionally low magnetic field (~20 mT), indicating the interplay between spontaneous symmetry breaking and Berry curvatures. Our results establish mixed-stacked multilayer graphene as a tunable platform with various broken symmetries and multiple flatbands, suitable for exploring emergent correlated electronic states.

cond-mat.mes-hall↗

arXiv2024

Switchable Chern insulator, isospin competitions and charge density waves in rhombohedral graphene moire superlattices

Graphene-based moire superlattices provide a versatile platform for exploring novel correlated and topological electronic states, driven by enhanced Coulomb interactions within flat bands. The intrinsic tunability of graphene s multiple degrees of freedom enables precise control over these complex quantum phases. In this study, we observe a range of competing phases and their transitions in rhombohedrally stacked hexalayer graphene on hexagonal boron nitride (r-6G/hBN) moire superlattices. When electrons are polarized away from the moire superlattice, we firstly identify a Chern insulator with reversible Chern numbers at v = 1 (one electron per moire cell), attributed to the competition between bulk and edge magnetizations.Then, we detect transitions between three distinct insulating states at v = 2, driven by vertical displacement field D and vertical magnetic field B. These insulating phases are distinguished as spin-antiferromagnetic, spin-polarized, and valley-polarized insulators, based on their responses to parallel and perpendicular magnetic fields. When electrons are polarized toward the moire superlattice, in a device with large twist angle, insulating states appear at v = 1/3 and 2/3 at zero magnetic field, and v = 1/2 in a magnetic field. Our findings reveal a rich interplay of charge, isospin, topology and magnetic field in rhombohedral graphene moire superlattices.

cond-mat.str-el↗

arXiv2023

Observation of Chern insulator in crystalline ABCA-tetralayer graphene with spin-orbit coupling

Degeneracies in multilayer graphene, including spin, valley, and layer degrees of freedom, are susceptible to Coulomb interactions and can result into rich broken-symmetry states. In this work, we report a ferromagnetic state in charge neutral ABCA-tetralayer graphene driven by proximity-induced spin-orbit coupling from adjacent WSe2. The ferromagnetic state is further identified as a Chern insulator with Chern number of 4, and its Hall resistance reaches 78% and 100% quantization of h/4e2 at zero and 0.4 tesla, respectively. Three broken-symmetry insulating states, layer-antiferromagnet, Chern insulator and layer-polarized insulator and their transitions can be continuously tuned by the vertical displacement field. Remarkably, the magnetic order of the Chern insulator can be switched by three knobs, including magnetic field, electrical doping, and vertical displacement field.

cond-mat.mes-hall↗

arXiv2023

Interaction-driven spontaneous broken-symmetry insulator and metals in ABCA tetralayer graphene

Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced due to the significant reduction in kinetic energy. In this study, we employ phonon-polariton assisted near-field infrared imaging to determine the stacking orders of tetralayer graphene devices. Through quantum transport measurements, we observe a range of spontaneous broken-symmetry states and their transitions, which can be finely tuned by carrier density n and electric displacement field D. Specifically, we observe a layer antiferromagnetic insulator at n = D = 0 with a gap of approximately 15 meV. Increasing D allows for a continuous phase transition from a layer antiferromagnetic insulator to a layer polarized insulator. By simultaneously tuning n and D, we observe isospin polarized metals, including spin-valley-polarized and spin-polarized metals. These transitions are associated with changes in Fermi surface topology and are consistent with the Stoner criteria. Our findings highlight the efficient fabrication of specially stacked multilayer graphene devices and demonstrate that crystalline multilayer graphene is an ideal platform for investigating a wide range of broken symmetries driven by Coulomb interactions.

cond-mat.mes-hall↗