arXiv subjects

Yating Wan

Publications and source records attributed to Yating Wan.

6 recordsLinked to original sources

arXiv2025

Mode Control and Dynamic Population Gratings in Quantum-Dot Lasers

Single-mode operation is essential for integrated semiconductor lasers, yet most solutions rely on regrowth, etched gratings, or other complex fabrication steps that limit scalability. We show that quantum-dot (QD) lasers can achieve stable single-mode lasing through a simple cavity design using dynamic population gratings (DPGs). Owing to the low lateral carrier diffusion of QDs, a strong standing-wave-induced carrier grating forms in a reverse-biased saturable absorber and provides self-aligned, mode-selective feedback not attainable in quantum-well devices. A single-ring laser achieves 46 dB side-mode suppression ratio (SMSR), while a dual-ring Vernier laser delivers ($>$ 46 nm) tuning range and up to 52.6 dB SMSR, with continuous-wave operation up to $80\,^{\circ}\mathrm{C}$. The laser remains single-mode under $-10.6$ dB external optical feedback and supports isolator-free data transmission at 32 Gbps. These results establish DPG-enabled QD lasers as a simple and scalable route to tunable, feedback-resilient on-chip light sources for communication, sensing, and reconfigurable photonic systems.

physics.optics↗

arXiv2025

ENLighten: Lighten the Transformer, Enable Efficient Optical Acceleration

Photonic computing has emerged as a promising substrate for accelerating the dense linear-algebra operations at the heart of AI, yet adoption for large Transformer models remains in its infancy. We identify two bottlenecks: (1) costly electro--optic conversions and data-movement overheads that erode energy efficiency as model sizes scale; (2) a mismatch between limited on-chip photonic resources and Transformer scale, which forces frequent reuse of photonic tensor cores and dilutes throughput gains. To address these challenges, we introduce a hardware--software co-design framework. First, we propose \texttt{Lighten}, a PTC-aware compression flow that post-hoc decomposes each Transformer weight matrix into a low-rank component plus a structured-sparse component aligned to photonic tensor-core granularity, without lengthy retraining. Second, we present \texttt{ENLighten}, a reconfigurable photonic accelerator with dynamically adaptive tensor cores, driven by broadband light redistribution, enabling fine-grained sparsity support and full power gating of inactive parts. On ImageNet, \texttt{Lighten} prunes a Base-scale Vision Transformer by 50\% with $\approx$1\% accuracy drop after only 3 epochs (about 1 hour) of fine-tuning. Deployed on \texttt{ENLighten}, it achieves a $2.5\times$ improvement in energy--delay product over the state-of-the-art photonic Transformer accelerator.

cs.ET↗

arXiv2025

Fostering cultural change in research through innovative knowledge sharing, evaluation, and community engagement strategies

Bringing together researchers, funders, industry partners, and publishers from 14 countries across 5 continents, we advance the debate around open-science, assessment and learning. We introduce an integrative "open knowledge system" framework linking knowledge production, validation, assessment, and reuse into one ecosystem view, and translate it into actionable recommendations for each stakeholder. Shifting focus to modular, machine-readable knowledge objects, these recommendations are intended to help diagnose misaligned incentives and guide reforms that properly value all scientific contributions.

cs.SI↗

arXiv2024

Turnkey locking of quantum-dot lasers directly grown on Si

Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL) have reached fiber laser coherence, but typically require a high-Q external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking (ECL) are a low-cost and turnkey operation option, but their coherence is generally inferior to SIL lasers. In this work, we demonstrate quantum-dot (QD) lasers grown directly on Si that achieve SIL laser coherence under turnkey ECL. The high-performance QD laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the QD laser's chaos-free nature enables a 16 Hz Lorentzian linewidth under ECL using a low-Q external cavity, and improves the frequency noise by an additional order of magnitude compared to conventional quantum-well lasers.

physics.optics↗

arXiv2022

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 {\deg}C and a maximum double-side output power of 126.6 mW at 20 {\deg}C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

physics.optics↗

arXiv2021

Analysis of the spontaneous emission limited linewidth of an integrated III-V/SiN laser

This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum-optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high-Q SiN cavity.

physics.optics↗