arXiv subjects

Yayu Wang

Publications and source records attributed to Yayu Wang.

At least 19 recordsLinked to original sources

arXiv2026

Eight-unit-cell electronic modulations in cuprates originating from local molecular orbitals

The pair density wave (PDW) state with eight-unit-cell (8a0) periodicity has been widely regarded as the primary order in cuprates, yet its existence and origin remain subjects of intense debate. Using spectroscopic imaging scanning tunneling microscopy, we observe spatial modulations of the electronic states with approximately 8a0 periodicity in both the superconducting and insulating regimes of hole-doped Ca2CuO2Cl2 cuprate. We find that the 8a0 spatial patterns are generated by the formation of molecular orbitals by doped holes, which organize into 4a0*4a0 plaquettes as the basic unit. Our results identify the 4a0 molecular orbital as the fundamental electronic building block in cuprates, while the 8a0 PDW represents a spatial subharmonic that emerges at sufficiently high doping.

cond-mat.supr-con↗

arXiv2026

Chern number reversal and emergent superconductivity in rhombohedral graphene induced by in-plane magnetic fields

Rhombohedral graphene with topological flat bands offers an ideal platform for realizing correlated and topological quantum phases. Here we investigate hBN aligned eight-layer rhombohedral graphene moire superlattices, which host a robust quantum anomalous Hall (QAH) state alongside three unconventional superconducting phases. For electron-doped carriers away from the moire potential, we observe QAH Chern number reversal driven by the displacement fields and in plane magnetic fields. For hole-doped carriers near the moire superlattice, the three superconducting phases exhibit distinctively different in plane magnetic field responses: one is weakly enhanced, the second is strongly suppressed, and the third exclusively induced by in plane magnetic field. The isotropic in plane magnetic field response in the QAH regime points to interplay between orbital magnetism and spin-orbit coupling, and the field-emergent superconductivity provides compelling evidence for spin-triplet pairing. Our work demonstrates a highly versatile platform for coexisting topological and superconducting states, and highlights in plane magnetic field as a powerful in-situ control knob for engineering novel quantum devices.

cond-mat.str-el↗

arXiv2025

Half-filled metal and molecular-orbital-mediated pairing in cuprate

The cuprates exhibit anomalous momentum-space structure with antinodal gap and nodal arc in the underdoped regime, which evolves into a complete hole-type Fermi surface with a large Luttinger volume in the overdoped regime. The real-space electronic structure is also quite complex, as characterized by microscopic inhomogeneities and intertwined density wave orders. Here we show that doped holes in cuprate form localized electronic molecules consisting of 4a0 plaquettes, and each plaquette contains approximately two holes. The effective local doping level is thus around 1/8, which is sufficient to destroy the underlying AF order and more importantly, recovers the half-filled metallic state of the original CuO2 plane. The restored Fermi surface, hosting one hole per unit cell, is consistent with experimental results and satisfies the Luttinger theorem. We then construct the momentum-space structure of the half-filled metal by considering the real-space configuration of electronic molecules. We show that the electronic potential with 4a0 periodicity imposed by the plaquettes and the quantum size effect of electronic molecules obliterate the nested antinodal Fermi surface sheets, leaving behind short arcs with coherent quasiparticles around the node. We propose that two doped holes in each plaquette occupy the shared molecular orbital and form a spin singlet, which can mediate the pairing of itinerant holes on the remnant Fermi surface of the half-filled metal. The electric dipole moment between the molecular orbitals and the dopant ions may also provide a novel attractive interaction between itinerant holes. This phenomenological model for pair formation between itinerant holes on the half-filled Fermi surface mediated by localized molecular orbitals resolves several core issues concerning the mechanism of superconductivity in cuprates.

cond-mat.supr-con↗

arXiv2025

Distinct orbital contributions to electronic and magnetic structures in La$_{4}$Ni$_{3}$O$_{10}$

High-T$_c$ superconductivity has recently been discovered in Ruddlesden-Popper phase nickelates under pressure, where the low-energy electronic structure is dominated by Ni $d_{x^2 - y^2}$ and $d_{z^2}$ orbitals. However, the respective roles of these orbitals in superconductivity remain unclear. Here, by combining X-ray absorption, electron energy loss spectroscopy, and density functional theory calculations on La$_{4}$Ni$_{3}$O$_{10}$ single crystals, we identify ligand holes in the $p_{x,y}$ orbitals of planar oxygen and the $p_z$ orbitals of apical oxygen, which hybridize with the Ni $d_{x^2-y^2}$ and $d_{z^2}$ orbitals, respectively. These ligand holes enable orbital-selective O K-edge resonant inelastic X-ray scattering (RIXS) study, which reveals that $d_{x^2-y^2}$ states dominate the low-energy charge excitations and are more itinerant. We also observe a $\sim$0.1 eV bimagnon through RIXS and Raman spectroscopy, which leads to an interlayer superexchange interaction J$_z$ of $\sim$50 meV. Our results reveal distinct contributions of Ni $d_{x^2-y^2}$ and $d_{z^2}$ orbitals to the electronic and magnetic structure and provide direct experimental insights to understand the RP-phase nickelate superconductors.

cond-mat.supr-con↗

arXiv2025

Interstitial oxygen order and its competition with superconductivity in La$_2$PrNi$_2$O$_{7+δ}$

High-temperature superconductivity in bilayer nickelate La$_3$Ni$_2$O$_7$ under pressure has attracted significant interest in condensed matter physics. While early samples exhibited limited superconducting volume fractions, Pr substitution for La enabled bulk superconductivity in polycrystals under pressure and enhanced transition temperatures in thin films at ambient pressure. Beyond rare-earth doping, moderate oxygen or ozone annealing improves superconductivity by mitigating oxygen vacancies, whereas high-pressure oxygen annealing leads to a trivial, non-superconducting metallic state across all pressure regimes. These findings highlight the need to elucidate both the individual and combined effects of Pr doping and oxygen stoichiometry in modulating superconductivity in bilayer nickelates. Here, using multislice electron ptychography and electron energy-loss spectroscopy, we investigate the structural and electronic properties of as-grown La$_2$PrNi$_2$O$_7$ and high-pressure-oxygen-annealed La$_2$PrNi$_2$O$_{7+δ}$ polycrystals. We find that Pr dopants preferentially occupy outer La sites, effectively eliminating inner-apical oxygen vacancies and ensuring near-stoichiometry in as-grown La$_2$PrNi$_2$O$_7$ that is bulk-superconducting under pressure. In contrast, high-pressure oxygen annealing induces a striped interstitial oxygen order, introducing quasi-1D lattice potentials and excess hole carriers into p-d hybridized orbitals, ultimately suppressing superconductivity. This behavior starkly contrasts with cuprate superconductors, where similar interstitial oxygen ordering enhances superconductivity instead. Our findings reveal a competition between striped interstitial oxygen order and superconductivity in bilayer nickelates, offering key insights into their distinct pairing mechanisms and providing a roadmap for designing more robust superconducting phases.

cond-mat.supr-con↗

arXiv2025

Strongly enhanced topological quantum phases in dual-surface AlO$_x$-encapsulated MnBi$_2$Te$_4$

The topological quantum phases in antiferromagnetic topological insulator MnBi$_2$Te$_4$ hold promise for next-generation spintronics, but their experimental realization has been constrained by challenges in preparing high-quality devices. In this work, we report a new wax-assisted exfoliation and transfer method that enables the fabrication of MnBi$_2$Te$_4$ heterostructures with both surfaces encapsulated by AlO$_x$. This strategy strongly enhances the topological quantum phases in MnBi$_2$Te$_4$ flakes. We observe the robust axion insulator state in even-layer device with wide zero Hall plateau and high longitudinal resistivity, and the quantum anomalous Hall effect in odd-layer device with large hysteresis and sharp plateau transition. These results demonstrate that the combination of wax exfoliation and AlO$_x$ encapsulation provides great potentials for exploring novel topological quantum phenomena and potential applications in MnBi$_2$Te$_4$ and other two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2025

Tailoring Neel orders in Layered Topological Antiferromagnets

In the two-dimensional limit, the interplay between Neel order and band topology in van der Waals topological antiferromagnets can give rise to novel quantum phenomena in the quantum anomalous Hall state, including the cascaded quantum phase transition and spin-modulation effect. However, due to the absence of net magnetization in antiferromagnets, probing the energetically degenerate Neel orders has long remained a significant challenge. Inspired by recent advances in realizing the quantum anomalous Hall effect in AlOx-capped layered topological antiferromagnet MnBi2Te4, we demonstrate deterministic control over the Neel order through surface anisotropy engineering enabled by the AlOx capping layer. By tuning the surface anisotropy, we uncover paritydependent symmetry breaking states that manifest as distinct odd-even boundary architectures, including 180 degree domain walls or continuous spin structures. Comparative studies between AlOx-capped and pristine odd-layer MnBi2Te4 flakes using domain-resolved magnetic force microscopy reveal pronounced differences in coercivity and magnetization-reversal dynamics. Notably, an unconventional giant exchange bias, which arises from perpendicular magnetic anisotropy rather than traditional interface pinning mechanisms, is observed for the first time. Our findings establish a pathway for manipulating Neel order through surface modification in A-type antiferromagnets, offering new opportunities for spintronic devices and quantum information technologies.

cond-mat.mes-hall↗

arXiv2024

Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4

Nonlinear charge transport, such as nonreciprocal longitudinal resistance and nonlinear Hall effect, has attracted considerable interest in probing the symmetries and topological properties of new materials. Recent research has revealed significant nonreciprocal longitudinal resistance and nonlinear Hall effect in MnBi2Te4, an intrinsic magnetic topological insulator, induced by the quantum metric dipole. However, the inconsistent response with charge density and conflicting C3z symmetry requirement necessitate a thorough understanding of factors affecting the nonlinear transport measurement. This study uncovers an experimental factor leading to significant nonlinear transport signals in MnBi2Te4, attributed to gate voltage oscillation from the application of large alternating current. Additionally, a methodology is proposed to suppress this effect by individually grounding the voltage electrodes during second-harmonic measurements. The investigation underscores the critical importance of assessing the impact of gate voltage oscillation before determining the intrinsic nature of nonlinear transport in 2D material devices with an electrically connected operative gate electrode.

cond-mat.mtrl-sci↗

arXiv2024

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for developing devices based on electrically tunable topological quantum states.

cond-mat.mtrl-sci↗

arXiv2024

Sub-nanometer depth resolution and single dopant visualization achieved by tilt-coupled multislice electron ptychography

Real-space imaging of three-dimensional atomic structures is a critical yet challenging task in materials science. Although scanning transmission electron microscopy has achieved sub-angstrom lateral resolution through techniques like electron ptychography1,2, depth resolution remains limited to only 2 to 3 nanometers with a single projection setup3,4. Attaining better depth resolution typically necessitates large sample tilt angles and many projections, as seen in atomic electron tomography5,6. Here, we develop a new algorithm based on multislice electron ptychography which couples only a few projections at small tilt angles, but is sufficient to improve the depth resolution by more than threefold to the sub-nanometer scale, and potentially to the atomic level. This technique maintains high resolving power for both light and heavy atoms, and significantly improves the visibility of single dopants. We are thus able to experimentally detect dilute substitutional praseodymium dopants in a brownmillerite oxide, Ca2Co2O5, in three dimensions and observe the accompanying lattice distortion. This technique requires only a moderate level of data acquisition or processing, and can be seamlessly integrated into electron microscopes equipped with conventional components.

cond-mat.mtrl-sci↗

arXiv2024

Towards the Quantized Anomalous Hall effect in AlO$_x$-capped MnBi$_2$Te$_4$

The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi$_2$Te$_4$ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as realizing quantized transport at zero magnetic fields depends critically on fabricating high-quality device. In this article, we address the detrimental influences of fabrication on MnBi$_2$Te$_4$ by simply depositing an AlO$_x$ thin layer on the surface prior to fabrications. Optical contrast and magnetotransport measurements on over 50 samples demonstrate that AlO$_x$ can effectively preserve the pristine state of the samples and significantly enhance the anomalous Hall effect towards quantization. Scaling analysis reveals the Berry curvature dominated mechanism of the anomalous Hall effect at various magnetic configurations. By adjusting the gate voltage, we uncover a gate independent antiferromagnetism in MnBi$_2$Te$_4$. Our experiment not only pave the way for fabricating high-quality transport devices but also advance the exploration of exotic quantum physics in 2D materials.

cond-mat.mtrl-sci↗

arXiv2024

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx capping layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2024

Gate Tunable Asymmetric Ozone Adsorption on Graphene

Molecular adsorption is pivotal in device fabrication and material synthesis for quantum technology. However, elucidating the behavior of physisorption poses technical challenges. Here graphene with ultrahigh sensitivity was utilized to detect ozone adsorption at cryogenic temperatures. Significant hole doping observed in graphene indicates a strong interaction between ozone and graphene. Interestingly, the adsorption exhibits asymmetry with positive and negative gate voltages. The strong affinity of ozone provides a tool to modulate materials and devices, while the gate tunability of adsorption offers new insights into construction and manipulation of oxide quantum materials.

cond-mat.mes-hall↗

arXiv2024

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi$_2$Te$_4$

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

cond-mat.mes-hall↗

arXiv2024

Interplay between electronic dephasing and localization in finite-sized Chern insulator

Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a large predicted magnetic gap. Here, employing varying sized MnBi2Te4 micro/nano-structures fabricated from a single molecular-beam-epitaxy-grown thin film, we have carried out a systematic size- and temperature-dependent study on the transport properties of the films regarding the quantum anomalous Hall states. The low-temperature transport properties of the finite-sized MnBi2Te4 samples can be quantitatively understood through Anderson localization, which plays an indispensable role in stabilizing the ground states. At higher temperatures, the failure of electron localization induced by an excessively short electronic dephasing length is identified as the cause of deviation from quantization. The work reveals that electronic dephasing and localization are non-negligible factors in designing high-temperature quantum anomalous Hall systems.

cond-mat.mes-hall↗

arXiv2024

Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films

We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field sweeping indicates that the magnetic domains or the spatial nonuniformity of magnetization originates from the strong pinning of the inherent sample inhomogeneity. A direct correlation between the Hall resistivity and the domain size has been established by analyzing a series of thin films with and without QAH. Our observation shows that one has to suppress the spatial nonuniformity of magnetization to allow the Hall resistivity to be quantized. The fact that a sizable longitudinal resistivity remains even for the QAH sample suggests a quantized Hall insulator scenario. Our work provides important insights to the understanding of the quantization mechanism and the dissipation of the QAH state in MnBi2Te4 system.

cond-mat.mes-hall↗

arXiv2024

Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films

In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization.

cond-mat.mes-hall↗

arXiv2023

Gate-controlled neuromorphic functional transition in an electrochemical graphene transistor

Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential components in artificial neural network such as synapses and neurons are predominantly implemented by dedicated devices with specific functionalities. In this work, we present a gate-controlled transition of neuromorphic functions between artificial neurons and synapses in monolayer graphene transistors that can be employed as memtransistors or synaptic transistors as required. By harnessing the reliability of reversible electrochemical reactions between C atoms and hydrogen ions, the electric conductivity of graphene transistors can be effectively manipulated, resulting in high on/off resistance ratio, well-defined set/reset voltage, and prolonged retention time. Overall, the on-demand switching of neuromorphic functions in a single graphene transistor provides a promising opportunity to develop adaptive neural networks for the upcoming era of artificial intelligence and machine learning.

physics.app-ph↗