arXiv subjects

Yayu Wang

Publications and source records attributed to Yayu Wang.

At least 55 records · Page 3Linked to original sources

arXiv2021

Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator

We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of spectral weight from high energy Hubbard band to low energy in-gap state creates a broad peak and nearly V-shaped gap around the Fermi level. The peak position shows a sudden drop at distance around 4 a0 and then remains almost constant. The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice. These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates.

cond-mat.supr-con↗

arXiv2021

Evolution of Charge and Pair Density Modulations in Overdoped Bi2Sr2CuO6+delta

One of the central issues concerning the mechanism of high temperature superconductivity in cuprates is the nature of the ubiquitous charge order and its implications to superconductivity. Here we use scanning tunneling microscopy to investigate the evolution of charge order from the optimally doped to strongly overdoped Bi2Sr2CuO6+δ cuprates. We find that with increasing hole concentration, the long-range checkerboard order gradually evolves into short-range glassy patterns consisting of diluted charge puddles. Each charge puddle has a unidirectional nematic internal structure, and exhibits clear pair density modulations as revealed by the spatial variations of superconducting coherence peak and gap depth. Both the charge puddles and the nematicity vanish completely in the strongly overdoped non-superconducting regime, when another type of short-range order with root2 * root2 periodicity emerges. These results shed important new lights on the intricate interplay between the intertwined orders and the superconducting phase of cuprates.

cond-mat.supr-con↗

arXiv2020

Anomalous doping evolution of superconductivity and quasiparticle interference in Bi2Sr2Ca2Cu3O10+δ trilayer cuprates

We use scanning tunneling microscopy to investigate Bi2Sr2Ca2Cu3O10+δ trilayer cuprates from the optimally doped to overdoped regime. We find that the two distinct superconducting gaps from the inner and outer CuO2 planes both decrease rapidly with doping, in sharp contrast to the nearly constant Tc. Spectroscopic imaging reveals the absence of quasiparticle interference in the antinodal region of overdoped samples, showing an opposite trend to that in single- and double-layer compounds. We propose that the existence of two types of inequivalent CuO2 planes and the intricate interaction between them are responsible for these highly anomalous observations in trilayer cuprates.

cond-mat.supr-con↗

arXiv2020

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4

The interplay between band topology and magnetic order plays a key role in quantum states of matter. MnBi2Te4, a van der Waals magnet, has recently emerged as an exciting platform for exploring Chern insulator physics. Its layered antiferromagnetic order was predicted to enable even-odd layer-number dependent topological states, supported by promising edge transport measurements. Furthermore, it becomes a Chern insulator when all spins are aligned by an applied magnetic field. However, the evolution of the bulk electronic structure as the magnetic state is continuously tuned and its dependence on layer number remains unexplored. Here, employing multimodal probes, we establish one-to-one correspondence between bulk electronic structure, magnetic state, topological order, and layer thickness in atomically thin MnBi2Te4 devices. As the magnetic state is tuned through the canted magnetic phase, we observe a band crossing, i.e., the closing and reopening of the bulk bandgap, corresponding to the concurrent topological phase transition. Surprisingly, we find that the even- and odd-layer number devices exhibit a similar topological phase transition coupled to magnetic states, distinct from recent theoretical and experimental reports. Our findings shed new light on the interplay between band topology and magnetic order in this newly discovered topological magnet and validate the band crossing with concurrent measurements of topological invariant in a continuously tuned topological phase transition.

cond-mat.mes-hall↗

arXiv2020

Machine Learning Identification of Impurities in the STM Images

In this work we train a neural network to identify impurities in the experimental images obtained by the scanning tunneling microscope measurements. The neural network is first trained with large number of simulated data and then the trained neural network is applied to identify a set of experimental images taken at different voltages. We use the convolutional neural network to extract features from the images and also implement the attention mechanism to capture the correlations between images taken at different voltages. We note that the simulated data can capture the universal Friedel oscillation but cannot properly describe the non-universal physics short-range physics nearby an impurity, as well as noises in the experimental data. And we emphasize that the key of this approach is to properly deal these differences between simulated data and experimental data. Here we show that even by including uncorrelated white noises in the simulated data, the performance of neural network on experimental data can be significantly improved. To prevent the neural network from learning unphysical short-range physics, we also develop another method to evaluate the confidence of the neural network prediction on experimental data and to add this confidence measure into the loss function. We show that adding such an extra loss function can also improve the performance on experimental data. Our research can inspire future similar applications of machine learning on experimental data analysis.

cond-mat.str-el↗

arXiv2020

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

The intricate interplay between nontrivial topology and magnetism in two-dimensional (2D) materials has led to the emergence of many novel phenomena and functionalities. An outstanding example is the quantum anomalous Hall (QAH) effect, which was realized in magnetically doped topological insulators (TIs) in the absence of magnetic field. Recently, the layered van der Waals compound MnBi2Te4 has been theoretically predicted and experimentally verified to be a TI with interlayer antiferromagnetic (AFM) order. It is a rare stoichiometric material with coexisting topology and magnetism, thus represents a perfect building block for complex topological-magnetic structures. Here we investigate the quantum transport behaviors of both bulk crystal and exfoliated MnBi2Te4 flakes in a field effect transistor geometry. In the 6 septuple layers (SLs) device tuned into the insulating regime, we observe a large longitudinal resistance and zero Hall plateau, which are characteristic of the axion insulator state. The robust axion insulator state occurs in zero magnetic field, over a wide magnetic field range, and at relatively high temperatures. Moreover, a moderate magnetic field drives a quantum phase transition from the axion insulator phase to a Chern insulator phase with zero longitudinal resistance and quantized Hall resistance h/e2 (h is the Plank constant and e is the elemental charge). These results pave the road for using even-number-SL MnBi2Te4 to realize the quantized topological magnetoelectric effect and axion electrodynamics in condensed matter systems.

cond-mat.mes-hall↗

arXiv2020

Electronic states and magnetic response of MnBi2Te4 by scanning tunneling microscopy and spectroscopy

Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, quantum anomalous Hall (QAH) effect and axion insulator state are observed in odd and even layers of MnBi2Te4, respectively. The measured band structures exhibit intriguing and complex properties. Here we employ low-temperature scanning tunneling microscopy to study its surface states and magnetic response. The quasiparticle interference patterns indicate that the electronic structures on the topmost layer of MnBi2Te4 is different from that of the expected out-of-plane A-type antiferromagnetic phase. The topological surface states may be embedded in deeper layers beneath the topmost surface. Such novel electronic structure presumably related to the modification of crystalline structure during sample cleaving and re-orientation of magnetic moment of Mn atoms near the surface. Mn dopants substituted at the Bi site on the second atomic layer are observed. The ratio of Mn/Bi substitutions is 5%. The electronic structures are fluctuating at atomic scale on the surface, which can affect the magnetism of MnBi2Te4. Our findings shed new lights on the magnetic property of MnBi2Te4 and thus the design of magnetic topological insulators.

cond-mat.mtrl-sci↗

arXiv2019

Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6

Cr2Ge2Te6 is an intrinsic ferromagnetic semiconductor with van der Waals type layered structure, thus represents a promising material for novel electronic and spintronic devices. Here we combine scanning tunneling microscopy and first-principles calculations to investigate the electronic structure of Cr2Ge2Te6. Tunneling spectroscopy reveals a surprising large energy level shift and change of energy gap size across the ferromagnetic to paramagnetic phase transition, as well as a peculiar double-peak electronic state on the Cr-site defect. These features can be quantitatively explained by density functional theory calculations, which uncover a close relationship between the electronic structure and magnetic order. These findings shed important new lights on the microscopic electronic structure and origin of magnetic order in Cr2Ge2Te6.

cond-mat.mtrl-sci↗

arXiv2019

Visualizing the periodic modulation of Cooper pairing in a severely underdoped cuprate

A major obstacle in understanding the mechanism of Cooper pairing in the cuprates is the existence of various intertwined orders associated with spin, charge, and Cooper pairs. Of particular importance is the ubiquitous charge order features that have been observed in a variety of cuprates, especially in the underdoped regime of the phase diagram. To explain the origin of the charge order and its implication to the superconducting phase, many theoretical models have been proposed, such as charge stripes, electronic nematicity, and Fermi surface instability. A highly appealing physical picture is the so-called pair density wave (PDW), a periodic modulation of Cooper paring in space, which may also induce a charge order. To elucidate the existence and nature of the PDW order, here we use scanning tunneling microscopy (STM) to investigate a severely underdoped Bi2Sr2CaCu2O8+δ, in which superconductivity just emerges on top of a pronounced checkerboard charge order. By analyzing the spatial distribution of the spectral features characteristic of superconductivity, we observe a periodic modulation of both the superconducting coherence peak and gap depth, demonstrating the existence of a density wave order of Cooper pairing. The PDW order has the same spatial periodicity as the charge order, and the amplitudes of the two orders exhibit clear positive correlation. These results shed important new lights on the origin of and interplay between the charge order and Cooper pairing modulation in the cuprates.

cond-mat.supr-con↗

arXiv2019

Quasiparticle interference and charge order in a heavily overdoped non-superconducting cuprate

One of the key issues in unraveling the mystery of high Tc superconductivity in the cuprates is to understand the normal state outside the superconducting dome. Here we perform scanning tunneling microscopy and spectroscopy measurements on a heavily overdoped, non-superconducting (Bi,Pb)2Sr2CuO6+x cuprate. Spectroscopic imaging reveals dispersive quasiparticle interferences and the Fourier transforms uncover the evolution of momentum space topology. More interestingly, we observe nanoscale patches of static charge order with sqrt(2)*sqrt(2) periodicity. Both the dispersive quasiparticle interference and static charge order can be qualitatively explained by theoretical calculations, which reveal the unique electronic structure of strongly overdoped cuprate.

cond-mat.supr-con↗

arXiv2019

Effect of structural supermodulation on superconductivity in tri-layer cuprate Bi2Sr2Ca2Cu3O10+x

We investigate the spatial and doping evolutions of the superconducting properties of tri-layer cuprate Bi2Sr2Ca2Cu3O10+x by using scanning tunneling microscopy and spectroscopy. Both the superconducting coherence peak and gap size exhibit periodic variations with the structural supermodulation, but the effect is much more pronounced in the underdoped regime than at optimal doping. Moreover, a new type of tunneling spectrum characterized by two superconducting gaps emerges with increasing doping, and the two-gap features also correlate with the supermodulation. We propose that the interaction between the inequivalent outer and inner CuO2 planes is responsible for these novel features that are unique to tri-layer cuprates.

cond-mat.supr-con↗

arXiv2018

Experimental realization of an intrinsic magnetic topological insulator

Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remains elusive experimentally so far. Here, we report the experimental realization of high-quality thin films of an intrinsic magnetic TI---MnBi$_2$Te$_4$---by alternate growth of a Bi$_2$Te$_3$ quintuple-layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators in a well-controlled way.

cond-mat.mtrl-sci↗

arXiv2018

Quantum anomalous Hall multilayers grown by molecular beam epitaxy

Quantum anomalous Hall (QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped (Bi,Sb)$_2$Te$_3$ topological insulator and CdSe normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance $h/Ne$$^2$, where $h$ is the Planck's constant, $e$ is the elementary charge and $N$ is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator.

cond-mat.mtrl-sci↗

arXiv2018

Direct evidence of ferromagnetism in a quantum anomalous Hall system

Quantum anomalous Hall (QAH) systems are of great fundamental interest and potential application because of their dissipationless conduction without the need for external magnetic field. The QAH effect has been realized in magnetically doped topological insulator thin films. However, full quantization requires extremely low temperature ($T< 50\,$mK) in the initial works, though it has been significantly improved with modulation doping or co-doping of magnetic elements. Improved ferromagnetism has been shown in these thin films, yet direct evidence of long-range ferromagnetic order is lacking. Herein, we present direct visualization of long-range ferromagnetic order in thin films of Cr and V co-doped (Bi,Sb)$_2$Te$_3$ using low-temperature magnetic force microscopy with $\textit{in-situ}$ transport. The magnetization reversal process reveals typical ferromagnetic domain behavior, i.e., domain nucleation and possibly domain wall propagation, in contrast to much weaker magnetic signals observed in the end members, possibly due to superparamagnetic behavior. The observed long-range ferromagnetic order resolves one of the major challenges in QAH systems, and paves the way to high-temperature dissipationless conduction by exploring magnetic topological insulators.

cond-mat.mtrl-sci↗

arXiv2018

Quantitative Measurements of Nanoscale Permittivity and Conductivity Using Tuning-fork-based Microwave Impedance Microscopy

We report quantitative measurements of nanoscale permittivity and conductivity using tuning-fork (TF) based microwave impedance microscopy (MIM). The system is operated under the driving amplitude modulation mode, which ensures satisfactory feedback stability on samples with rough surfaces. The demodulated MIM signals on a series of bulk dielectrics are in good agreement with results simulated by finite-element analysis. Using the TF-MIM, we have visualized the evolution of nanoscale conductance on back-gated $MoS_2$ field effect transistors and the results are consistent with the transport data. Our work suggests that quantitative analysis of mesoscopic electrical properties can be achieved by near-field microwave imaging with small distance modulation.

physics.app-ph↗

arXiv2017

Dimensional Crossover Induced Topological Hall Effect in a Magnetic Topological Insulator

We report transport studies of Mn-doped Bi2Te3 topological insulator (TI) films with accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than 5 quintuple-layer (QL) exhibit the usual anomalous Hall effect for magnetic TIs. When the thickness is reduced to 4 QL, however, characteristic features associated with the topological Hall effect (THE) emerge. More surprisingly, the THE vanishes again when the film thickness is further reduced to 3 QL. Theoretical calculations demonstrate that the coupling between the top and bottom surface states at the dimensional crossover regime stabilizes the magnetic skyrmion structure that is responsible for the THE.

cond-mat.mtrl-sci↗

arXiv2017

Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi2(SexTe1-x)3 TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. But for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. The in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.

cond-mat.mtrl-sci↗

arXiv2017

Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2 represents another intriguing example, in which the Mott insulator phase is intimately entangled with a series of complex charge-density-wave (CDW) orders. More interestingly, it has been recently found that 1T-TaS2 undergoes a Mott-insulator-to-superconductor transition induced by high pressure, charge doping, or isovalent substitution. The nature of the Mott insulator phase and transition mechanism to the conducting state is still under heated debate. Here, by combining scanning tunneling microscopy (STM) measurements and first-principles calculations, we investigate the atomic scale electronic structure of 1T-TaS2 Mott insulator and its evolution to the metallic state upon isovalent substitution of S with Se. We identify two distinct types of orbital textures - one localized and the other extended - and demonstrates that the interplay between them is the key factor that determines the electronic structure. Especially, we show that the continuous evolution of the charge gap visualized by STM is due to the immersion of the localized-orbital-induced Hubbard bands into the extended-orbital-spanned Fermi sea, featuring a unique evolution from a Mott gap to a charge-transfer gap. This new mechanism of orbital-driven Mottness collapse revealed here suggests an interesting route for creating novel electronic state and designing future electronic devices.

cond-mat.str-el↗