arXiv subjects

Yedi Shen

Publications and source records attributed to Yedi Shen.

4 recordsLinked to original sources

arXiv2025

Quantum Anomalous Hall Effect in Flat Bands with Paramagnetism

Quantum anomalous Hall effect has been widely explored in both ferromagnetic and antiferromagnetic systems. Here, we propose an interaction-driven paramagnetic quantum anomalous Hall effect emerging in the Fermion-Hubbard model on a dice lattice with weak spin-orbit coupling. Based on exact diagonalization calculations, the time-reversal symmetry breaking in the ground state is evidenced by nonuniform loop currents between nearest-neighbor sites. The many-body ground state possesses a Chern number of $\mathcal{C}=2$ or $6$, and strong correlation effects in the half-filled flat bands lead to a well-defined first excitation gap and a clear insulating gap, ensuring the robustness against thermal fluctuations and external perturbations. The interplay between spin-orbit coupling and Hubbard interaction allows tunability of various magnetic ground states, generating a rich phase diagram with competing ferromagnetic, antiferromagnetic, and paramagnetic orders.

cond-mat.str-el↗

arXiv2024

Dynamic Viscosity of the ABC-stacked Multilayer Graphene in the Collisionless Regime

We explore the dynamic shear viscosity of the undoped ABC-stacked multilayer graphene based on the chiral-$N$ effective Hamiltonian, where the chirality $N$ is equivalent to the layer number. We investigate the dependence of the dynamic shear viscosity on the frequency in the collisionless regime and calculate Coulomb interaction corrections by three leading order Feynman diagrams: self-energy diagram, vertex diagram, and honey diagram. We propose that the dynamic shear viscosity is generated by the relaxation of momentum flux polarization through electron-hole excitations, and that the interaction can amplify this effect. Furthermore, our research indicates that the dynamic shear viscosity exhibits a robust linear positive dependence on $N$. This finding suggests that by making modifications to the number of layers in graphene, it is possible to finely tune the electron viscous effects.

cond-mat.mes-hall↗

arXiv2023

Disorder-Induced Phase Transitions in Three-Dimensional Chiral Second-Order Topological Insulator

Topological insulators have been extended to higher-order versions that possess topological hinge or corner states in lower dimensions. However, their robustness against disorder is still unclear. Here, we theoretically investigate the phase transitions of three-dimensional (3D) chiral second-order topological insulator (SOTI) in the presence of disorders. Our results show that, by increasing disorder strength, the nonzero densities of states of side surface and bulk emerge at critical disorder strengths of $W_{S}$ and $W_{B}$, respectively. The spectral function indicates that the bulk gap is only closed at one of the $R_{4z}\mathcal{T}$-invariant points, i.e., $Γ_{3}$. The closing of side surface gap or bulk gap is ascribed to the significant decrease of the elastic mean free time of quasi-particles. Because of the localization of side surface states, we find that the 3D chiral SOTI is robust at an averaged quantized conductance of $2e^{2}/h$ with disorder strength up to $W_{B}$. When the disorder strength is beyond $W_{B}$, the 3D chiral SOTI is then successively driven into two phases, i.e., diffusive metallic phase and Anderson insulating phase. Furthermore, an averaged conductance plateau of $e^{2}/h$ emerges in the diffusive metallic phase.

cond-mat.mes-hall↗

arXiv2022

On the sample-dependent minimal conductivity in weakly disordered graphene

We present a unified understanding of the experimentally observed minimal dc conductivity in weakly disordered graphene. Firstly, based on linear response theory, we reveal that randomness or disorder inevitably induces momentum dependent corrections to the electron self-energy function, which naturally yields a sample-dependent minimal conductivity. Taking the long-ranged Gaussian and Coulomb potentials as examples, we derive the momentum dependent self-energy function within the Born approximation, and further validate it via numerical simulations using the large-scale Lanczos algorithm. The explicit momentum dependences of the self-energy on the intensity, concentration and range of potential are critically addressed. Therefore, our results provide a reasonable interpretation of the sample-dependent minimal conductivity observed in graphene samples.

cond-mat.mes-hall↗