arXiv subjects

Yee Sin Ang

Publications and source records attributed to Yee Sin Ang.

101 records · Page 6Linked to original sources

arXiv2020

Broadband strong optical dichroism in topological Dirac semimetals with Fermi velocity anisotropy

Prototypical three-dimensional (3D) topological Dirac semimetals (DSMs), such as Cd$_3$As$_2$ and Na$_3$Bi, contain electrons that obey a linear momentum-energy dispersion with different Fermi velocities along the three orthogonal momentum dimensions. Despite being extensively studied in recent years, the inherent \emph{Fermi velocity anisotropy} has often been neglected in the theoretical and numerical studies of 3D DSMs. Although this omission does not qualitatively alter the physics of light-driven massless quasiparticles in 3D DSMs, it does \emph{quantitatively} change the optical coefficients which can lead to nontrivial implications in terms of nanophotonics and plasmonics applications. Here we study the linear optical response of 3D DSMs for general Fermi velocity values along each direction. Although the signature conductivity-frequency scaling, $σ(ω) \propto ω$, of 3D Dirac fermion is well-protected from Fermi velocity anisotropy, the linear optical response exhibits strong linear dichroism as captured by the \emph{universal} extinction ratio scaling law, $Λ_{ij} = (v_i/v_j)^2$ (where $i\neq j$ denotes the three spatial coordinates $x,y,z$, and $v_i$ is the $i$-direction Fermi velocity), which is independent of frequency, temperature, doping, and carrier scattering lifetime. For Cd$_3$As$_2$ and Na$_3$Bi$_3$, an exceptionally strong extinction ratio larger than 15 and covering broad terahertz window is revealed. Our findings shed new light on the role of Fermi velocity anisotropy in the optical response of Dirac semimetals and open up novel polarization-sensitive functionalities, such as photodetection and light modulation.

cond-mat.mtrl-sci↗

arXiv2019

Super-Andreev reflection and longitudinal shift of pseudospin-one fermions

Novel fermions with a pseudospin-1 structure can be realized as emergent quasiparticles in condensed matter systems. Here, we investigate its unusual properties during the Andreev reflection at a normal-metal/superconductor (NS) interface. We show that distinct from the previously studied pseudospin-1/2 and two dimensional electron gas models, the pseudospin-1 fermions exhibit a strongly enhanced Andreev reflection probability, and remarkably, can be further tuned to approach perfect Andreev reflection with unit efficiency for all incident angles, exhibiting a previously unknown {super-Andreev reflection effect}. The super-Andreev reflection leads to perfect transparency of the NS interface that strongly promotes charge injection into the superconductor, and directly manifests as a differential conductance peak which can be readily probed in experiment. Additionally, we find that sizable longitudinal shifts exist in the normal and Andreev reflections of pseudospin-1 fermions. Distinct from the pseudospin-1/2 case, the shift is always in the forward direction in the subgap regime, regardless of whether the reflection is of retro- or specular type.

cond-mat.mes-hall↗

arXiv2019

Generalized high-energy thermionic electron injection at graphene interface

Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks down. Here we construct a full-band model beyond the simple Dirac cone approximation for the thermionic injection of high-energy electrons in graphene. We show that the thermionic emission model based on the Dirac cone approximation is valid only in the graphene/semiconductor Schottky interface operating near room temperature, but breaks down in the cases involving high-energy electrons, such as graphene/vacuum interface or heterojunction in the presence of photon absorption, where the full-band model is required to account for the band structure nonlinearity at high electron energy. We identify a critical barrier height, $Φ_B^{(\text{c})} \approx 3.5$ eV, beyond which the Dirac cone approximation crosses over from underestimation to overestimation. In the high-temperature thermionic emission regime at graphene/vacuum interface, the Dirac cone approximation severely overestimates the electrical and heat current densities by more than 50\% compared to the more accurate full-band model. The large discrepancies between the two models are demonstrated using a graphene-based thermionic cooler. These findings reveal the fallacy of Dirac cone approximation in the thermionic injection of high-energy electrons in graphene. The full-band model developed here can be readily generalized to other 2D materials, and shall provide an improved theoretical avenue for the accurate analysis, modeling and design of graphene-based thermionic energy devices.

cond-mat.mes-hall↗

arXiv2018

Fractional Fresnel coefficients for optical absorption in femtosecond laser-induced rough metal surfaces

The surface morphology of metal influences its optical absorptivity. Recent experiments have demonstrated that the femtosecond laser induced surface structures on metals could be dynamically controlled by the fluence of laser and the number of pulses. In this paper, we formulate an analytical model to calculate the optical absorption of a rough metallic surface by modeling the roughness as a fractal slab. For a given experimental image of the surface roughness, we characterize the roughness with a fractal parameter by using box-counting method. With this parameter as input, we calculate the absorption of 800 nm laser pulse impinging on gold, copper and platinum, and the calculated results show excellent agreements. In terms of physics, our model can be viewed as a fractional version of the Fresnel coefficients, and it will be useful for designing suitable surface structures to tune the light absorption on metals from purely reflective to highly absorptive based on different applications.

physics.app-ph↗

arXiv2018

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials

We identify a new universality in the carrier transport of two-dimensional(2D)-material-based Schottky heterostructures. We show that the reversed saturation current ($\mathcal{J}$) scales universally with temperature ($T$) as $ \log(\mathcal{J}/T^β) \propto -1/T$, with $β= 3/2$ for lateral Schottky heterostructures and $β= 1$ for vertical Schottky heterostructures, over a wide range of 2D systems including nonrelativistic electron gas, Rashba spintronic system, single and few-layer graphene, transition metal dichalcogenides and thin-films of topological solids. Such universalities originate from the strong coupling between the thermionic process and the in-plane carrier dynamics. Our model resolves some of the conflicting results from prior works and is in agreement with recent experiments. The universal scaling laws signal the breakdown of $β=2$ scaling in the classic diode equation widely-used over the past 60 years. Our findings shall provide a simple analytical scaling for the extraction of the Schottky barrier height in 2D-material-based heterostructure, thus paving way for both fundamental understanding of nanoscale interface physics and applied device engineering.

cond-mat.mes-hall↗

arXiv2018

Thickness dependence of space-charge-limited current in spatially disordered organic semiconductors

Charge transport properties in organic semiconductors are determined by two kinds of microscopic disorders, namely energetic disorder related to the distribution of localized states and the spatial disorder related to the morphological features of the material. From a semi-classical picture, the charge transport properties are crucially determined by both the carrier mobility and the electrostatic field distribution in the material. Although the effect of disorders on carrier mobility has been widely studied, how electrostatic field distribution is distorted by the presence of disorders and its effect on charge transport remain unanswered. In this paper, we present a modified space-charge-limited current (SCLC) model for spatially disordered organic semiconductors based on the fractional-dimensional electrostatic framework. We show that the thickness dependence of SCLC is related to the spatial disorder in organic semiconductors. For trap-free transport, the SCLC exhibits a modified thickness scaling of $J\propto L^{-3α}$, where the fractional-dimension parameter $α$ accounts for the spatial disorder in organic semiconductors. The trap-limited and field-dependent mobility are also shown to obey an $α$-dependent thickness scaling. The modified SCLC model shows a good agreement with several experiments on spatially disordered organic semiconductors. By applying this model to the experimental data, the standard charge transport parameters can be deduced with better accuracy than by using existing models.

physics.app-ph↗

arXiv2017

Fractional Fowler-Nordheim Law for Field Emission from Rough Surface with Nonparabolic Energy Dispersion

The theories of field electron emission from perfectly planar and smooth canonical surfaces are well understood, but they are not suitable for describing emission from rough, irregular surfaces arising in modern nanoscale electron sources. Moreover, the existing models rely on Sommerfeld's free-electron theory for the description of electronic distribution which is not a valid assumption for modern materials with nonparabolic energy dispersion. In this paper, we derive analytically a generalized Fowler-Nordheim (FN) type equation that takes into account the reduced space-dimensionality seen by the quantum mechanically tunneling electron at a rough, irregular emission surface. We also consider the effects of non-parabolic energy dispersion on field-emission from narrow-gap semiconductors and few-layer graphene using Kane's band model. The traditional FN equation is shown to be a limiting case of our model in the limit of a perfectly flat surface of a material with parabolic dispersion. The fractional-dimension parameter used in this model can be experimentally calculated from appropriate current-voltage data plot. By applying this model to experimental data, the standard field-emission parameters can be deduced with better accuracy than by using the conventional FN equation.

physics.acc-ph↗

arXiv2017

Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate

Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all-electrically in an electrostatic setting. Here we propose a class of all-electric-controlled valley filter, valve and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valley-pseudo-magnetoresistance ratio of over 10,000\% can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical-reversibility in two-input universal Boolean gate. The (2+1) polarization states -- two distinct valleys plus a null polarization -- re-establish one-to-one input-to-output mapping, a crucial requirement for logical-reversibility, and significantly reduce the complexity of reversible circuits due to the built-in nature of valley degree of freedom. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing.

cond-mat.mes-hall↗

arXiv2017

Generalized Fowler-Nordheim field-induced vertical electron emission model for two-dimensional materials

Current theoretical description of field-induced electron emission remains mostly bounded by the classic Fowler-Nordheim (FN) framework developed nearly one century ago. For the emerging class of two-dimensional (2D) materials, many basic assumptions of FN model become invalid due to their reduced dimensionality and exotic electronic properties. In this work, we develop analytical and semi-analytical models of field-induced vertical electron emission from the surface of 2D materials by explicitly taking into account the reduced dimensionality, non-parabolic energy spectrum, non-conserving in-plane electron momentum, finite-temperature and space-charge-limited effects. We show that the traditional FN law is no longer valid for 2D materials. The modified vertical field emission model developed here provides better agreement with experimental results. Intriguingly, a new high-field regime of \emph{saturated surface field emission} emerges due to the reduced dimensionality of 2D materials. A remarkable consequence of this saturated field emission effect is the absence of space-charge-limited current normally expected at high field in three-dimensional bulk material.

cond-mat.mes-hall↗

arXiv2016

Nonlocal transistor based on pure crossed Andreev reflection in a EuO-graphene/superconductor hybrid structure

We study the interband transport in a superconducting device composed of graphene with EuO-induced exchange interaction. We show that pure crossed Andreev reflection can be generated exclusively without the parasitic local Andreev reflection and elastic cotunnelling over a wide range of bias and Fermi levels in an EuO-graphene/superconductor/EuO-graphene device. The pure non-local conductance exhibits rapid on/off switching and oscillatory behavior when the Fermi levels in the normal and the superconducting leads are varied. The oscillation reflects the quasiparticle propagation in the superconducting lead and can be used as a tool to probe the subgap quasiparticle mode in superconducting graphene, which is inaccessible from the current-voltage characteristics. Our results suggest that the device can be used as a highly tunable transistor that operates purely in the non-local and spin-polarized transport regime.

cond-mat.mes-hall↗

arXiv2013

Klein tunneling and cone transport in AA-stacked bilayer graphene

We investigate the quantum tunneling of electrons in an AA-stacked bilayer graphene (BLG) $n$-$p$ junction and $n$-$p$-$n$ junction. We show that Klein tunneling of an electron can occur in this system. The quasiparticles are not only chiral but are additionally described by a `cone index'. Due to the orthogonality of states with different cone indexes, electron transport across a potential barrier must strictly conserve the cone index and this leads to the protected cone transport which is unique in AA-stacked BLG. Together with the negative refraction of electrons, electrons residing in different cones can be spatially separated according to their cone index when transmitted across an $n$-$p$ junction. This suggests the possibility of `cone-tronic' devices based on AA-stacked BLG. Finally, we calculate the junction conductance of the system.

cond-mat.mes-hall↗