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Yeng Ming Lam

Publications and source records attributed to Yeng Ming Lam.

5 recordsLinked to original sources

Cladding Layer Enhanced GHz Bulk Acoustic Wave Resonance in Sodium Niobate Thin Films on Silicon

Bulk acoustic wave resonators (BAWR) and bandpass filters operating at GHz frequency are the workhorse of (Vo-)LTE telecommunication and broadband internet. In line with the Singapore Green Plan 2030 for innovating environmentally friendly products, we fabricated lead-free BAWR with sodium niobate (NaNbO3) piezoelectric on silicon with a high electromechanical coupling factor up to 31.3% operating at ~4 GHz. We disclose our crucial strategy where the NaNbO3 layer is cladded between two thin layers of high band gap insulators, which satisfies two primary objectives, i.e. leakage current mitigation and crack avoidance. In addition, we also verified the efficacy of reducing lattice parameters of the cladding layers in promoting vertically distorted tetragonal phase NaNbO3 and producing stronger BAWR signals.

cond-mat.mtrl-sci

Ultrafast Spin-To-Charge Conversion at the Surface of Topological Insulator Thin Films

Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, we present an all-optical method that enables unprecedented tracking of the ultrafast dynamics of spin-to-charge conversion in a prototypical topological insulator Bi$_2$Se$_3$/ferromagnetic Co heterostructure, down to the sub-picosecond timescale. Compared to pure Bi$_2$Se$_3$ or Co, we observe a giant terahertz emission in the heterostructure than originates from spin-to-charge conversion, in which the topological surface states play a crucial role. We identify a 0.12-picosecond timescale that sets a technological speed limit of spin-to-charge conversion processes in topological insulators. In addition, we show that the spin-to-charge conversion efficiency is temperature independent in Bi$_2$Se$_3$ as expected from the nature of the surface states, paving the way for designing next-generation high-speed opto-spintronic devices based on topological insulators at room temperature.

cond-mat.mtrl-sci

Stable biexcitons in two-dimensional metal-halide perovskites with strong dynamic lattice disorder

With strongly bound and stable excitons at room temperature, single-layer, two-dimensional organic-inorganic hybrid perovskites are viable semiconductors for light-emitting quantum optoelectronics applications. In such a technological context, it is imperative to comprehensively explore all the factors --- chemical, electronic and structural --- that govern strong multi-exciton correlations. Here, by means of two-dimensional coherent spectroscopy, we examine excitonic many-body effects in pure, single-layer (PEA)$_2$PbI$_4$ (PEA = phenylethylammonium). We determine the binding energy of biexcitons --- correlated two-electron, two-hole quasiparticles --- to be $44 \pm 5$\,meV at room temperature. The extraordinarily high values are similar to those reported in other strongly excitonic two-dimensional materials such as transition-metal dichalchogenides. Importantly, we show that this binding energy increases by $\sim25$\% upon cooling to 5\,K. Our work highlights the importance of multi-exciton correlations in this class of technologically promising, solution-processable materials, in spite of the strong effects of lattice fluctuations and dynamic disorder.

cond-mat.mtrl-sci

Picosecond Dynamics of Internal Exciton Transitions in CdSe Nanorods

The picosecond dynamics of excitons in colloidal CdSe nanorods are directly measured via their 1s to 2p-like internal transitions by ultra-broadband terahertz spectroscopy. Broadened absorption peaks from both the longitudinal and transverse states are observed at 8.5 and 11 THz, respectively. The onset of exciton-LO phonon coupling appears as a bleach in the optical conductivity spectra at the LO phonon energy for times > 1 ps after excitation. Simulations show a suppressed exciton temperature due to thermally excited hole states being rapidly captured onto ligands or unpassivated surface states. The relaxation kinetics are manipulated and the longitudinal transition is quenched by surface ligand exchange with hole capturing pyridine.

cond-mat.mes-hall

FeCl3 based Few-Layer Graphene Intercalation Compounds: Single Linear Dispersion Electronic Band Structure and Strong Charge Transfer Doping

Graphene has attracted great attentions since its first discovery in 2004. Various approaches have been proposed to control its physical and electronic properties. Here, we report that graphene based intercalation compounds is an efficient method to modify the electronic properties of few layer graphene (FLG). FeCl3 intercalated FLG were successfully prepared by two-zone vapor transport method. This is the first report on full intercalation for graphene samples. The features of the Raman G peak of such few-layer graphene intercalation compounds (FLGIC) are in good agreement with their full intercalation structures. The FLGIC presents single Lorentzian 2D peak, similar to that of single layer graphene, indicating the loss of electronic coupling between adjacent graphene layers. First principle calculations further reveal that the band structure of FLGIC is similar to single layer graphene but with strong doping effect due to the charge transfer from graphene to FeCl3. The successful fabrication of FLGIC opens a new way to modify properties of FLG for fundamental studies and future applications.

cond-mat.mtrl-sci