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Yeonwoong Jung

Publications and source records attributed to Yeonwoong Jung.

6 recordsLinked to original sources

Skin Controlled Electronic and Neuromorphic Tattoos

Wearable human activity sensors developed in the past decade show a distinct trend of becoming thinner and more imperceptible while retaining their electrical qualities, with graphene e-tattoos, as the ultimate example. A persistent challenge in modern wearables, however, is signal degradation due to the distance between the sensor's recording site and the signal transmission medium. To address this, we propose here to directly utilize human skin as a signal transmission medium as well as using low-cost gel electrodes for rapid probing of 2D transistor-based wearables. We demonstrate that the hypodermis layer of the skin can effectively serve as an electrolyte, enabling electrical potential application to semiconducting films made from graphene and other 2D materials placed on top of the skin. Graphene transistor tattoos, when biased through the body, exhibit high charge carrier mobility (up to 6500 2V-1s-1), with MoS2 and PtSe2 transistors showing mobilities up to 30 cm2V-1s-1 and 1 cm2V-1s-1, respectively. Finally, by introducing a layer of Nafion to the device structure, we observed neuromorphic functionality, transforming these e-tattoos into neuromorphic bioelectronic devices controlled through the skin itself. The neuromorphic bioelectronic tattoos have the potential for developing self-aware and stand-alone smart wearables, crucial for understanding and improving overall human performance.

cs.HC↗

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.

cond-mat.mes-hall↗

Multipurpose and Reusable Ultrathin Electronic Tattoos Based on PtSe2 and PtTe2

Wearable bioelectronics with emphasis on the research and development of advanced person-oriented biomedical devices have attracted immense interest in the last decade. Scientists and clinicians find it essential to utilize skin-worn smart tattoos for on-demand and ambulatory monitoring of an individual's vital signs. Here we report on the development of novel ultrathin platinum-based two-dimensional dichalcogenide (Pt-TMDs) based electronic tattoos as advanced building blocks of future wearable bioelectronics. We made these ultrathin electronic tattoos out of large-scale synthesized platinum diselenide (PtSe2) and platinum ditelluride (PtTe2) layered materials and used them for monitoring human physiological vital signs, such as the electrical activity of the heart and the brain, muscle contractions, eye movements, and temperature. We show that both materials can be used for these applications; yet, PtTe2 was found to be the most suitable choice due to its metallic structure. In terms of sheet resistance, skin-contact, and electrochemical impedance, PtTe2 outperforms state-of-the-art gold and graphene electronic tattoos and performs on par with medical-grade Ag/AgCl gel electrodes. The PtTe2 tattoos show four times lower impedance and almost 100 times lower sheet resistance compared to monolayer graphene tattoos. One of the possible prompt implications of the work is perhaps in the development of advanced human-machine interfaces. To display the application, we built a multi-tattoo system that can easily distinguish eye movement and identify the direction of an individual's sight.

cond-mat.mtrl-sci↗

Uniform vapor pressure based CVD growth of MoS2 using MoO3 thin film as a precursor for co-evaporation

Chemical vapor deposition (CVD) is a powerful method employed for high quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for CVD based growth of monolayer molybdenum disulfide (MoS2) by using thermally evaporated thin films of molybdenum trioxide (MoO3) as the molybdenum (Mo) source for co-evaporation. Uniform evaporation rate of the MoO3 thin films provides uniform Mo vapor which promotes highly reproducible single crystal growth of MoS2 throughout the substrate. These high-quality crystals are as large as 95 um and were characterized by scanning electron microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy and transmission electron microscopy. The bottom gated field effect transistors fabricated using the as grown single crystals show n-type transistor behavior with a good on/off ratio of 10^6 under ambient condition. Our results presented here addresses the precursor vapor control during the CVD process and is a major step forward toward reproducible growth of MoS2 for future semiconductor device applications.

cond-mat.mtrl-sci↗

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morphology of SnTe such that only desired crystallographic surfaces are present. Here, we grow SnTe nanostructures using vapor-liquid-solid and vapor-solid growth mechanisms. Previously, SnTe nanowires and nanocrystals have been grown.1-4 In this report, we demonstrate synthesis of SnTe nanoplates with lateral dimensions spanning tens of microns and thicknesses of a hundred nanometers. The top and bottom surfaces are either (100) or (111), maximizing topological surface states on these surfaces. Magnetotransport on these SnTe nanoplates shows high bulk carrier density, consistent with bulk SnTe crystals arising due to defects such as Sn vacancies. In addition, we observe a structural phase transition in these nanoplates from the high temperature rock salt to low temperature rhombohedral structure. For nanoplates with very high carrier density, we observe a slight upturn in resistance at low temperatures, indicating electron-electron interactions.

cond-mat.mes-hall↗

Extremely Low Drift in Amorphous Phase Change Nanowire Materials

Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. However, drift in stressed nanowires embedded under dielectric films is comparable to thin-films. Our results shows that drift in PCM is due to stress relaxation and will help in understanding and controlling drift in PCM devices.

cond-mat.mtrl-sci↗