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Yi-Han Zhou

Publications and source records attributed to Yi-Han Zhou.

2 recordsLinked to original sources

Energy Gap in Weakly Disordered Fractional Quantum Hall Liquids: Quantitative Comparison to GaAs Quantum Well Experiments at $\nu= 1/3$

Based on a recent experiment in high-quality GaAs quantum wells [Phys. Rev. Lett. 127, 056801 (2021)], we present a microscopic study of the energy gap in two-dimensional electron gases at filling factor $\nu=1/3$, explicitly incorporating both finite layer thickness and disorder effects. The finite layer thickness is modeled by solving the Poisson-Schr\"odinger equations for the experimental devices, yielding the electron wave functions in the perpendicular direction. Using these and the disorder energy extracted from the experiment, we estimate the charge gap and the mobility gap at $\nu=1/3$ in the weakly disordered lowest Landau level. Remarkably, both gaps show good quantitative agreement with the activation gap measured from the experiment in narrow quantum wells. Our results also indicate the potential need of incorporating higher subbands to make accurate theoretical predictions of the energy gap in wide quantum wells.

cond-mat.str-el

Floquet Fractional Chern Insulators and Competing Phases in Twisted Bilayer Graphene

We study the many-body physics in twisted bilayer graphene coupled to periodic driving of a circularly polarized light when electron-electron interactions are taken into account. In the limit of high driving frequency $Ω$, we use Floquet theory to formulate the system by an effective static Hamiltonian truncated to the order of $Ω^{-2}$, which consists of a single-electron part and the screened Coulomb interaction. We numerically simulate this effective Hamiltonian by extensive exact diagonalization in the parameter space spanned by the twist angle and the driving strength. Remarkably, in a wide region of the parameter space, we identify Floquet fractional Chern insulator states in the partially filled Floquet valence bands. We characterize these topologically ordered states by ground-state degeneracy, spectral flow, and entanglement spectrum. In regions of the parameter space where fractional Chern insulator states are absent, we find topologically trivial charge density waves and band-dispersion-induced Fermi liquids which strongly compete with fractional Chern insulator states.

cond-mat.str-el