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Yibin Hu

Publications and source records attributed to Yibin Hu.

11 recordsLinked to original sources

Stealthy World Model Manipulation via Data Poisoning

Model-based learning agents use learned world models to predict future states, plan actions, and adapt to new environments. However, the process of updating world models from collected experience creates a training-time attack surface: adversarially poisoned fine-tuning trajectories can manipulate the learned dynamics and thereby corrupt downstream planning. In this paper, we propose SWAAP, the first two-stage data poisoning framework for learned world models. In the first stage, SWAAP identifies a harmful target world model that induces low-return behavior under planning while remaining close to clean dynamics, using first-order bilevel optimization enabled by a transition-gradient theorem. In the second stage, SWAAP realizes this target through stealth-constrained gradient matching, modifying only a limited fraction of fine-tuning transition targets so that the induced training gradients steer the victim model toward the adversarial target, while a prediction-error regularizer encourages the poisoned targets to remain close to the world model's natural approximation error. To assess attack stealthiness, we evaluate defenses and detectability across three stages of the poisoning pipeline: pre-training detection of poisoned transitions, robust training during fine-tuning, and test-time monitoring of the resulting world model. Across diverse continuous-control tasks, SWAAP causes substantial performance degradation while keeping poisoned transitions close to clean data and evading the evaluated non-adaptive residual/CUSUM/TRIM-style defenses. These results reveal a practical vulnerability in world-model adaptation pipelines and highlight the need for robustness methods that protect both world-model training data and learned dynamics.

cs.LG

Insider Attacks in Multi-Agent LLM Consensus Systems

Large language models (LLMs) are increasingly deployed in multi-agent systems where agents communicate in natural language to solve tasks jointly. A key capability in such systems is consensus formation, where agents iteratively exchange messages and update decisions to reach a shared outcome. However, most existing multi-agent LLM frameworks assume that all participating agents are aligned with the system objective. In practice, a malicious insider may participate as a legitimate member of the group while pursuing a hidden adversarial goal. In this work, we study insider manipulation in multi-agent LLM consensus systems. We formalize the problem as a sequential decision-making task in which a malicious agent seeks to delay or prevent agreement among benign agents. To make attack optimization tractable, we propose a world-model-based framework that learns surrogate dynamics over the latent behavioral states of benign agents and then trains an attacker using reinforcement learning based on this learned model. Preliminary results show that the trained attacker reduces the benign consensus rate and prolongs disagreement more effectively than the direct malicious-prompt baseline. These results suggest that combining latent world models with reinforcement learning is a promising direction for adaptive insider attacks in language-based multi-agent systems.

cs.MA

Largely enhanced photogalvanic effects in the phosphorene photodetector by strain-increased device asymmetry

Photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of the open-circuit voltage that is much larger than the bandgap, making it rather attractive in solar cells. However, the magnitude of the PGE photocurrent is usually small, which severely hampers its practical application. Here we propose a mechanism to largely enhance the PGE photocurrent by mechanical strain based on the quantum transport simulations for the two-dimensional nickel-phosphorene-nickel photodetector. Broadband PGE photocurrent governed by the Cs noncentrosymmetry is generated at zero bias under the illumination of linearly polarized light. The photocurrent depends linearly on the device asymmetry, while nonlinearly on the optical absorption. By applying the appropriate mechanical tension stress on the phosphorene, the photocurrent can be substantially enhanced by up to 3 orders of magnitude, which is primarily ascribed to the largely increased device asymmetry. The change in the optical absorption in some cases can also play a critical role in tuning the photocurrent due to the nonlinear dependence. Moreover, the photocurrent can even be further enhanced by the mechanical bending, mainly owing to the considerably enhanced device asymmetry. Our results reveal the dependence of the PGE photocurrent on the device asymmetry and absorption in transport process through a device, and also explore the potentials of the PGE in the self-powered low-dimensional flexible optoelectronics.

physics.app-ph

Tunable giant magnetoresistance in a single-molecule junction

Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the magnetic ion centers fundamentally impact the transport through the molecules. Here we demonstrate that the electron pathway in a single-molecule device can be selected between two molecular orbitals by varying a magnetic field, giving rise to a tunable anisotropic magnetoresistance up to 93%. The unique tunability of the electron pathways is due to the magnetic reorientation of the transition metal center, resulting in a re-hybridization of molecular orbitals. We obtain the tunneling electron pathways by Kondo effect, which manifests either as a peak or a dip line shape. The energy changes of these spin-reorientations are remarkably low and less than one millielectronvolt. The large tunable anisotropic magnetoresistance could be used to control electronic transport in molecular spintronics.

cond-mat.mes-hall

High intrinsic $ZT$ in InP$_3$ monolayer at room temperature

Two-dimensional thermoelectric materials with a figure of merit $ZT$, which is greater than 2.0 at room temperature, would be highly desirable in energy conversion since the efficiency is competitive to conventional energy conversion techniques. Here, we propose that the indium triphosphide (InP$_3$) monolayer offers an extraordinary $ZT$ of 2.2 at 300 K by using quantum calculations within the ballistic thermal transport region. A remarkably low and isotropic phononic thermal conductivity is founded, which is due to flat lattice vibration modes. This low thermal conductivity takes a major responsibility to the impressively high $ZT$. Moreover, a large $ZT$ that is greater than 1.5 can be maintained, even if a 1% mechanic extension is applied on the lattice. These results suggest that the InP$_3$ monolayer is a promising candidate for low dimensional thermoelectric applications.

cond-mat.mtrl-sci

Two-Dimensional Photogalvanic Spin-Battery

Pure spin-current is of central importance in spintronics. Here we propose a two-dimensional (2D) spin-battery system that delivers pure spin-current without an accompanying charge-current to the outside world at zero bias. The principle of the spin-battery roots in the photogalvanic effect (PGE), and the system has good operational stability against structural perturbation, photon energy and other materials detail. The device principle is numerically implemented in the 2D material phosphorene as an example, and first principles calculations give excellent qualitative agreement with the PGE physics. The 2D spin-battery is interesting as it is both a device that generates pure spin-currents, also an energy source that harvests photons. Given the versatile operational space, the spin-battery should be experimentally feasible.

physics.app-ph

Low conductance of the nickel atomic junctions in hydrogen atmosphere

The low conductance of nickel atomic junctions in the hydrogen environment is studied using the nonequilibrium Green's function theory combined with first-principles calculations. The Ni junction bridged by a $H_2$ molecule has a conductance of approximately 0.7 $G_0$. This conductance is contributed by the anti-bonding state of the $H_2$ molecule, which forms a bonding state with the $3d$ orbitals of the nearby Ni atoms. In contrast, the Ni junction bridged by the two single H atoms has a conductance of approximately 1 $G_0$, which is weakly spin-polarized. The spin-up channels were found to contribute mostly to the conductance at a small junction gap, while the spin-down channels play a dominant role at a larger junction gap.

cond-mat.mes-hall

Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations

We report \textit{ab initio} simulations of quantum transport properties of Fe/MgO/Fe trilayer structures with FeO$_{0.5}$ buffer iron oxide layer, where on-site Coulomb interaction is explicitly taken into account by local density approximation + Hubbard \textit{U} approach. We show that on-site Coulomb repulsion in the iron-oxygen layer can cause a dramatic drop of the tunnel magnetoresistance of the system. We present an understanding of microscopic details of this phenomenon, connecting it to localization of the Fermi electrons of particular symmetry, which takes place in the buffer Fe-O layer, when on-site Coulomb repulsion is introduced. We further study the possible influence of the symmetry reduction in the buffer Fe-O layer on the transport properties of the Fe/MgO/Fe interface.

cond-mat.mtrl-sci

Robustness of the helical edge states in topological insulators

Topological insulators (TI) are materials having an energy band gap in the bulk and conducting helical electronic states on the surface. The helical states are protected by time reversal symmetry thus are expected to be robust against static disorder scattering. In this work we report atomistic first principles analysis of disorder scattering in two-probe transport junctions made of three dimensional TI material Bi2Se3. The robustness of the device against disorder scattering is determined quantitatively. Examining many different scattering configurations, a general trend emerges on how strong the perturbing potential and how it is spatially distributed that can derail the helical states on the Bi2Se3 surfaces.

cond-mat.mes-hall

First-principles Analysis of Photo-current in Graphene PN Junctions

We report a first principles investigation of photocurrent generation by graphene PN junctions. The junctions are formed by either chemically doping with nitrogen and boron atoms, or by controlling gate voltages. Non-equilibrium Green's function (NEGF) formalism combined with density functional theory (DFT) is applied to calculate the photo-response function. The graphene PN junctions show a broad band photo-response including the terahertz range. The dependence of the response on the angle between the light polarization vector and the PN interface is determined. Its variation against photon energy $E_{ph}$ is calculated in the visible range. The essential properties of chemically doped and gate-controlled PN junctions are similar, but the former shows fingerprints of dopant distribution.

physics.comp-ph

First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers

By carrying out density functional theory analysis within the Keldysh non-equilibrium Green's functional formalism, we have calculated the nonlinear and non-equilibrium quantum transport properties of Fe/MgO/Fe trilayer structures as a function of external bias voltage. For well relaxed atomic structures of the trilayer, the equilibrium tunnel magnetoresistance ratio (TMR) is found to be very large and also fairly stable against small variations in the atomic structure. As a function of external bias voltage, the TMR reduces monotonically to zero with a voltage scale of about 1V, in agreement with experimental observations. We present understanding of the nonequilibrium transport properties by investigating microscopic details of the scattering states and the Bloch bands of the Fe leads.

cond-mat.mtrl-sci