arXiv subjects

Yifei Hao

Publications and source records attributed to Yifei Hao.

7 recordsLinked to original sources

arXiv2026

Topological phase transition driven by in-plane spin rotation

The intrinsic coupling between magnetism and nontrivial band topology in magnetic topological insulators makes external magnetic fields a powerful tool for manipulating topological states. However, conventional magnetic control mechanisms, such as driving magnetic phase transitions or fully reversing magnetization, typically demand large magnetic fields and lack continuous tunability. Here, we establish a symmetry framework for the reversible switching of topological states via continuous in-plane spin rotation, governed by magnetic point group constraints on the Berry curvature distribution. Using a two-dimensional kagome ferromagnetic Chern insulator as a prototype, we demonstrate that a 60°in-plane magnetization rotation reverses the sign of the Chern number, transitioning through a topologically trivial state. Crucially, micromagnetic simulations confirm that this spin-reorientation-driven switching operates under exceptionally small magnetic fields and on ultrafast timescales. This work provides a highly efficient, low-energy paradigm for the manipulation of topological states.

cond-mat.mtrl-sci↗

arXiv2026

"Not Human, Funnier": How Machine Identity Shapes Humor Perception in Online AI Stand-up Comedy

Chatbots are increasingly applied to domains previously reserved for human actors. One such domain is comedy, whereby both the general public working with ChatGPT and research-based LLM-systems have tried their hands on making humor. In formative interviews with professional comedians and video analyses of stand-up comedy in humans, we found that human performers often use their ethnic, gender, community, and demographic-based identity to enable joke-making. This suggests whether the identity of AI itself can empower AI humor generation for human audiences. We designed a machine-identity-based agent that uses its own status as AI to tell jokes in online performance format. Studies with human audiences (N=32) showed that machine-identity-based agents were seen as funnier than baseline-GPT agent. This work suggests the design of human-AI integrated systems that explicitly utilize AI as its own unique identity apart from humans.

cs.HC↗

arXiv2023

Transport Anisotropy in One-dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit

One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving electron lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ back-gates patterned with periodic, 100-200 nm wide stripe domains. Due to band reconstruction, the h-BN top-gating induces satellite Dirac points in samples with current along the superlattice vector $\hat{s}$, a feature absent in samples with current perpendicular to $\hat{s}$. The satellite Dirac point position scales with the superlattice period ($L$) as $\propto L^β$, with $β= -1.18 \pm 0.06$. These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to $\hat{s}$ quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena.

cond-mat.mes-hall↗

arXiv2023

Interface-tuning of ferroelectricity and quadruple-well state in CuInP$_2$S$_6$ via ferroelectric oxide

Ferroelectric van der Waals CuInP$_2$S$_6$ possesses intriguing quadruple-well states and negative piezoelectricity. Its technological implementation has been impeded by the relatively low Curie temperature (bulk $T_C$ ~42 °C) and the lack of precise domain control. Here we show that CuInP$_2$S$_6$ can be immune to the finite size effect and exhibits enhanced ferroelectricity, piezoelectricity, and polar alignment in the ultrathin limit when interfaced with ferroelectric oxide PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films. Piezoresponse force microscopy studies reveal that the polar domains in thin CuInP$_2$S$_6$ fully conform to those of underlying PbZr$_{0.2}$Ti$_{0.8}$O$_3$, where the piezoelectric coefficient changes sign and increases sharply with reducing thickness. High temperature $in$ $situ$ domain imaging points to a significantly enhanced $T_C$ exceeding 200 °C for 13 nm CuInP$_2$S$_6$ on PbZr$_{0.2}$Ti$_{0.8}$O$_3$. Density functional theory modeling and Monte Carlo simulations show that the enhanced polar alignment and $T_C$ can be attributed to interface-mediated structure distortion in CuInP$_2$S$_6$. Our study provides an effective material strategy to engineer the polar properties of CuInP$_2$S$_6$ for flexible nanoelectronic, optoelectronic, and mechanical applications.

cond-mat.mtrl-sci↗

arXiv2022

Remote Surface Optical Phonon Scattering in Ferroelectric Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ Gated Graphene

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ films, with field effect mobility up to 23,000 cm$^{2}$V$^{-1}$s$^{-1}$ achieved. Switching the ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$, from which we extract the RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

cond-mat.mes-hall↗

arXiv2022

Anomalous Hall Effect and Perpendicular Magnetic Anisotropy in Ultrathin Ferrimagnetic NiCo$_2$O$_4$ Films

The inverse spinel ferrimagnetic NiCo$_2$O$_4$ possesses high magnetic Curie temperature $T_C$, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo$_2$O$_4$ thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo$_2$O$_4$ films on MgAl$_2$O$_4$ substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while $T_C$ for 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity ($σ_{xy}$) and its scaling relation with the longitudinal conductivity ($σ_{xx}$) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal-insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo$_2$O$_4$.

cond-mat.mtrl-sci↗

arXiv2020

Polar Coupling Enabled Nonlinear Optical Filtering at MoS$_2$/Ferroelectric Heterointerfaces

Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is yet to be charted. Here, we report an unconventional nonlinear optical filtering effect resulting from the interfacial polar alignment between monolayer MoS$_2$ and a neighboring ferroelectric oxide thin film. The second harmonic generation response at the heterointerface is either substantially enhanced or almost entirely quenched by an underlying ferroelectric domain wall depending on its chirality, and can be further tailored by the polar domains. Unlike the extensively studied coupling mechanisms driven by charge, spin, and lattice, the interfacial tailoring effect is solely mediated by the polar symmetry, as well explained via our density functional theory calculations, pointing to a new material strategy for the functional design of nanoscale reconfigurable optical applications.

cond-mat.mes-hall↗