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Yihuang Xiong

Publications and source records attributed to Yihuang Xiong.

At least 19 recordsLinked to original sources

ADAPT: Lightweight, Long-Range Machine Learning Force Fields Without Graphs

Point defects play a central role in driving the properties of materials. First-principles methods are widely used to compute defect energetics and structures, including at scale for high-throughput defect databases. However, these methods are computationally expensive, making machine-learning force fields (MLFFs) an attractive alternative for accelerating structural relaxations. Most existing MLFFs are based on graph neural networks (GNNs), which can suffer from oversmoothing, oversquashing, and poor representation of long-range interactions. Both of these issues are especially of concern when modeling point defects. To address these challenges, we introduce the \textit{Accelerated Deep Atomic Potential Transformer} (ADAPT), an MLFF that replaces graph representations with a direct coordinates-in-space formulation and explicitly considers all pairwise atomic interactions. Atoms are treated as tokens, with a Transformer encoder modeling their interactions. Applied to a dataset of silicon point defects, ADAPT achieves a roughly 22% reduction in force and a roughly 40 percent reduction in energy prediction error relative to a state-of-the-art GNN-based model, while requiring only a fraction of the computational cost.

cs.LG↗

Geometric Superconducting Diode Effect in an NbN Nanoring

Superconducting diodes, which exhibit nonreciprocal critical currents, are promising building blocks for low-power cryogenic electronics and superconducting circuits. Existing superconducting diode platforms commonly rely on Josephson junctions, multilayer heterostructures, ferromagnetic elements, gate-difined structures. Here, we demonstrate a geometrically induced superconducting diode effect realized in a structurally minimal, single-materials NbN nanoring, where inversion-symmetry breaking is introduced solely by the asymmetric geometry. The device exhibits pronounced and polarity-switchable critical-current nonreciprocity. Systematic magnetic-field and temperature-dependent measurements reveal that, at low fields, the applied magnetic field redistributes the critical current asymmetrically between opposite bias directions without significantly reducing the overall superconducting current-carrying capability. Moreover, the maximal nonreciprocity and diode efficiency exhibit distinct temperature dependence: the maximal diode efficiency follows the evolution of the energy gap, whereas the maximal nonreciprocity is more closely associated with the superfluid density. These results establish asymmetric superconducting nanorings as a minimal geometric platform for studying nonreciprocal superconducting transport and provide a simple design principle for future superconducting electronics.

cond-mat.supr-con↗

Evaluating the Structural Basis for Polar Altermagnet Candidate Ca$_{3}$(Ru,Ti)$_{2}$O$_{7}$

The interplay between polar and altermagnetic orders remains largely unexplored in the broader landscape of correlated electron systems. Ca$_{3}$Ru$_{2}$O$_{7}$ has been proposed by density functional theory (DFT) as a polar altermagnet, reliant on the transformation of experimentally reported $Bb2_{1}m$ phase to a lower symmetry $Pn2_{1}a$ structure. Here, we perform a targeted search for the $Pn2_{1}a$ phase using synchrotron X-ray diffraction on single crystals of Ca$_{3}$Ru$_{2}$O$_{7}$ and Ca$_{3}$(Ru$_{0.99}$Ti$_{0.01}$)$_{2}$O$_{7}$. No diffraction signature of the $Pn2_{1}a$ structure is detected down to 20 K within experimental limits of $\sim$60-200 fm atomic displacements, significantly smaller than the DFT prediction of $\sim$1 pm. Combined with recent nonlinear transport measurements, our structural study suggests Ca$_{3}$Ru$_{2}$O$_{7}$ as a unique system where strong electron correlations drive an electronic phase transition without any measurable lattice symmetry change. With Ti substitution exceeding $\sim$3%, a chemically tunable altermagnetic phase with $Bb2_{1}m$ structure emerges. The study highlights the importance of sub-picometer metrology towards de-convolving structural versus electronic origins of altermagnets.

cond-mat.str-el↗

Nanoscale electrothermal-switch superconducting diode for electrically programmable superconducting circuits

Superconducting diodes enable dissipationless directional transport, yet achieving electrical tunability and scalability remains a major challenge for circuit-level integration. Here, we demonstrate an electrothermal-switch superconducting diode in which a gate-controlled nanoscale hotspot dynamically breaks inversion symmetry in a superconducting nanowire. This mechanism gives rise to two coexisting nonreciprocal transport regimes-one associated with a nonreciprocal superconducting-to-normal transition and the other with ratchet-like vortex dynamics-both originating from the same electrothermal-switch process. The diode exhibits efficiencies up to 42% and 60% for the two regimes, respectively, and can be electrically switched on, off, or reversed in polarity in situ by applying a small gate current. These capabilities enable programmable superconducting circuits that realize electrically reconfigurable full-wave and half-wave rectification. The lithography-compatible design, high performance, and gate-controlled functionality establish a scalable platform for programmable superconducting electronics and hybrid quantum systems.

cond-mat.supr-con↗

Silicon T centre hyperfine structure and memory protection schemes

Combining the long-coherence of spin qubits and the capability to transmit information and entanglement through photons, spin-photon interfaces (SPIs) are a promising platform for networked quantum computation and long-distance quantum communication. SPIs that possess local `memory' qubits in addition to the optically coupled `communication' qubit can improve remote entanglement fidelities through brokered entanglement schemes and entanglement purification. In these schemes, it is critical to protect the memory qubit from decoherence during entanglement operations on the communications qubit. Silicon, a platform with mature microelectronic and nanophotonic fabrication, is host to the T centre, an SPI with emission in the telecommunications O-band that directly integrates with silicon nanophotonics. Cavity-coupled T centres are a platform for brokered entanglement distribution in silicon photonic circuits and over long-distance optical fibre links. The T centre's electron and nuclear spin qubits are an intrinsic register of communication and memory qubits respectively, with anisotropic hyperfine coupling. In this work we determine the T centre's hydrogen hyperfine coupling tensor. We also introduce schemes to protect against dephasing or eliminate relaxation of the T centre's hydrogen memory qubit during optical excitation. These results address a key challenge for practical T centre quantum networks.

quant-ph↗

Entanglement of a nuclear spin qubit register in silicon photonics

Color centers provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T center in silicon is an emerging spin-photon interface that combines telecom O-band optical transitions and an electron spin in a scalable photonics platform. In this work, we demonstrate the initialization, coherent control, and state readout of a three-qubit register based on the electron spin of a T center coupled to a hydrogen and a silicon nuclear spin. The spin register exhibits spin echo coherence times of $0.41(2)$~ms for the electron spin, $112(12)$~ms for the hydrogen nuclear spin, and $67(7)$~ms for the silicon nuclear spin. We use nuclear-nuclear two-qubit gates to generate entanglement between the two nuclear spins with a fidelity of $F=0.77(3)$ and a coherence time of $T^*_2=2.60(8)$~ms. Our results show that a T center in silicon photonics can realize a multi-qubit register with an optical interface for quantum communication.

quant-ph↗

First principles and scanning tunneling spectroscopical evidences for thermodynamically stable "on-top" sulfur divacancy in monolayer WS$_{2}$

Chalcogen vacancies in monolayer transition metal dichalcogenides (TMDs), such as WS$_{2}$, play a crucial role in various applications ranging from optoelectronics and catalysis to quantum information science (QIS), making their identification and control essential. This study focuses on WS$_{2}$ single vacancy and vacancy pairs. Using first principles computations, we investigate their thermodynamic stabilities and electronic structures. We identify an "on-top" divacancy configuration where two vacancies sit on top of each other to be the only energetically stable complex with a binding energy of 160 meV. We compute a small difference in electronic structure with a shift of the unoccupied state by 140 meV for the divacancy complex and observe electronic state shift during Scanning Tunneling Spectroscopy of a series of vacancy in WS$_2$ providing spectroscopical evidence for the presence of this defect.

cond-mat.mtrl-sci↗

First principles computations of the Stark shift of a defect-bound exciton: the case of the T center in silicon

The T center in silicon has recently drawn a lot of attention for its potential in quantum information science. The sensitivity of the zero-phonon line (ZPL) to electrical field was recently investigated by a combination of different experimental methods but there is still no first principles study on the Stark shift of the T center. Dealing with the defect-bound exciton nature of the excited state is particularly challenging using density functional theory because of the large spatial delocalization associated with the wavefunction. Here, we tackle this issue by performing a convergence study over the supercell size. We obtain an exciton binding energy of 28.5meV, in good agreement with experimental results. We then calculate the Stark shift through the dipole moment change of the ZPL transition of the T center using the modern theory of polarization formalism and find a modest linear coefficient of $Δμ$=0.79D along X and $Δμ$=0.03D along Y. We discuss our results in light of the recent experimental measurements of the Stark shift. Our analysis suggests that bound-exciton defects could be particularly sensitive to local field effect as a result of their large spatial extent.

cond-mat.mtrl-sci↗

$Δ$SCF in \texttt{VASP} for excited-state defect computations: tips and pitfalls

$Δ$SCF with constrained occupations have been wildly used to investigate the excited-state and optical properties of defects. Recent studies have demonstrated that combining $Δ$SCF with hybrid functionals yields good accuracy in predicting defect properties. The Vienna Ab initio Simulation Package (\texttt{VASP}) is one of the most widely used quantum mechanical packages based on plane-wave methods. Despite the increasing application of $Δ$SCF as implemented in \texttt{VASP} for defect studies, detailed walkthroughs explaining how to conduct these calculations remain limited, making this approach a nontrivial task. Applying $Δ$SCF with hybrid functionals can present convergence challenges; worse, it may sometimes converge to incorrect excited states and can go largely unnoticed. This document aims to serve as a concise guide outlining what we think might be the appropriate approach for performing $Δ$SCF calculations in \texttt{VASP}. We benchmark this method by simulating excited states for a particularly challenging system: the neutral charge state of the silicon vacancy (SiV$^0$) defect in diamond. By highlighting potential pitfalls, we hope this document encourages further discussion within the community and assists researchers experiencing difficulties with this technique. The guidelines provided here are largely based on private discussions with Oscar Bulancea Lindvall from Link{ö}ping University and Chris Ciccarino from Stanford University.

cond-mat.mtrl-sci↗

Identifying high performance spectrally-stable quantum defects in diamond

Point defects in semiconductors are becoming central to quantum technologies. They can be used as spin qubits interfacing with photons, which are fundamental for building quantum networks. Currently, the most prominent quantum defect in diamond is the nitrogen-vacancy (NV) center. However, it suffers from spectral diffusion that negatively impacts optical coherence and is due to the coupling of the emission energy with uncontrolled electric fields. The group IV vacancy complexes on the other hand have shown to be significantly more spectrally-stable as they are centrosymmetric and thus immune to the linear Stark shift. They however suffer from several issues ranging from low operation temperature to low optical efficiency due to dark states and difficulty in stabilizing the right defect charge state. Here we search for alternative to the group IV vacancy complex in diamond by systematically evaluating all possible vacancy complex using high-throughput first-principles computational screening. We identify the defects that combine centrosymmetry, emission in the visible range, as well as favorable and achievable electronic structure promoting higher operation temperature and defect levels well within the band gap. We find Zn$V^{-2}$ to be especially appealing.

cond-mat.mtrl-sci↗

A substitutional quantum defect in WS$_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (Co$_{\rm S}^{0}$) as very promising and fabricate it with scanning tunneling microscopy (STM). The Co$_{\rm S}^{0}$ electronic structure measured by STM agrees with first principles and showcases an attractive new quantum defect. Our work shows how HT computational screening and novel defect synthesis routes can be combined to design new quantum defects.

cond-mat.mtrl-sci↗

Optical transition parameters of the silicon T centre

The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamiltonian of the T centre TX state and determine key parameters of the optical transition from T$_0$ to TX$_0$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T centre emission. As a result, we provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies.

quant-ph↗

A first principles study of the Stark shift effect on the zero-phonon line of the NV center in diamond

Point defects in semiconductors are attractive candidates for quantum information science applications owing to their ability to act as spin-photon interface or single-photon emitters. However, the coupling between the change of dipole moment upon electronic excitation and stray electric fields in the vicinity of the defect, an effect known as Stark shift, can cause significant spectral diffusion in the emitted photons. In this work, using first principles computations, we revisit the methodology to compute the Stark shift of point defects up to the second order. The approach consists of applying an electric field on a defect in a slab and monitoring the changes in the computed zero-phonon line (i.e., difference in energy between the ground and excited state) obtained from constraining the orbital occupations (constrained-DFT). We study the Stark shift of the negatively charged nitrogen-vacancy (NV) center in diamond using this slab approach. We discuss and compare two approaches to ensure a negatively charged defect in a slab and we show that converged values of the Stark shift measured by the change in dipole moment between the ground and excited states ($Δμ$) can be obtained. We obtain a Stark shift of $Δμ$=2.68D using the semi-local GGA-PBE functional and of $Δμ$=2.23D using the HSE hybrid-functional. These values are in good agreement with experimental results. We also show that modern of theory of polarization can be used on constrained-DFT to obtain Stark shifts in very good agreement with the slab computations.

cond-mat.mtrl-sci↗

Discovery of T center-like quantum defects in silicon

Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable spin bath and high processability. While some color centers in silicon have been emerging in quantum applications, there is still a need to search and develop new high performance quantum emitters. Searching a high-throughput computational database of more than 22,000 charged complex defects in silicon, we identify a series of defects formed by a group III element combined with carbon ((A-C)$\rm _{Si}$ with A=B,Al,Ga,In,Tl) and substituting on a silicon site. These defects are analogous structurally, electronically and chemically to the well-known T center in silicon ((C-C-H)$\rm_{Si}$) and their optical properties are mainly driven by an unpaired electron in a carbon $p$ orbital. They all emit in the telecom and some of these color centers show improved properties compared to the T center in terms of computed radiative lifetime or emission efficiency. We also show that the synthesis of hydrogenated T center-like defects followed by a dehydrogenation annealing step could be an efficient way of synthesis. All the T center-like defects show a higher symmetry than the T center making them easier to align with magnetic fields. Our work motivates further studies on the synthesis and control of this new family of quantum defects, and also demonstrates the use of high-throughput computational screening to detect new complex quantum defects.

cond-mat.mtrl-sci↗

The Defects Genome of 2D Janus Transition Metal Dichalcogenides

Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarisation field within the monolayer. While efforts have been made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes that introduce unwanted grain-boundary and point defects with still unexplored effects on the material's structural and excitonic properties Through High-resolution scanning transmission electron microscopy (HRSTEM), density functional theory (DFT), and optical spectroscopy measurements; this work introduces the most encountered and energetically stable point defects. It establishes their impact on the material's optical properties. HRSTEM studies show that the most energetically stable point defects are single (Vs and Vse) and double chalcogen vacancy (Vs-Vse), interstitial defects (Mi), and metal impurities (MW) and establish their structural characteristics. DFT further establishes their formation energies and related localized bands within the forbidden band. Cryogenic excitonic studies on h-BN-encapsulated Janus monolayers offer a clear correlation between these structural defects and observed emission features, which closely align with the results of the theory. The overall results introduce the defect genome of Janus TMDs as an essential guideline for assessing their structural quality and device properties.

cond-mat.mtrl-sci↗

Compressive-Sensing-Enhanced First-Principles Calculation of Photoluminescence Spectra in Color Centers: A Comparison between Theory and Experiment for the G Center in Silicon

Photoluminescence (PL) spectra are a versatile tool for exploring the electronic and optical properties of quantum defect systems. In this work, we investigate the PL spectra of the G center in silicon by combining first-principles computations with a machine-learned compressive-sensing technique and experiment. We show that the compressive-sensing technique provides a speed up of approximately 20 times compared with the finite-displacement method with similar numerical accuracy. We compare theory and experiment and show good agreement for the historically proposed configuration B of the G center. In particular, we attribute the experimentally observed E-line of the G center to a local vibration mode mainly involving two substitutional C atoms and one interstitial Si atom. Our theoretical results also well reproduce and explain the experimental E-line energy shifts originating from the carbon isotopic effect. In addition, our results demonstrate that some highly anharmonic modes that are apparent in computed spectra could be absent experimentally because of their short lifetime. Our work not only provides a deeper understanding of the G-center defect but also paves the way to accelerate the calculation of PL spectra for color centers.

cond-mat.mtrl-sci↗

Ternary oxides of $\textit{s}$- and $\textit{p}$-block metals for photocatalytic solar-to-hydrogen conversion

Oxides containing metals or metalloids from the {\it p}-block of the periodic table ({\it e.g.}, In, Sn, Sb, Pb, Bi) are of technological interest as transparent conductors and light absorbers for solar energy conversion due to the tunability of their electronic conductivity and optical absorption. Comparatively, these oxides have found limited applications in hydrogen photoelectrolysis primarily due to their high electronegativity, which impedes electron transfer for reducing protons into hydrogen. We have shown recently that inserting {\it s}-block cations into {\it p}-block metal oxides is effective at lowering electronegativities while affording further control of band gaps. Here, we explain the origins of this dual tunability by demonstrating the mediator role of {\it s}-block cations in modulating orbital hybridization while not contributing to frontier electronic states. From this result, we carry out a comprehensive computational study of 109 ternary oxides of {\it s}- and {\it p}-block metal elements as candidate photocatalysts for solar hydrogen generation. We downselect the most desirable materials using band gaps and band edges obtained from Hubbard-corrected density-functional theory with Hubbard parameters computed entirely from first principles, evaluate the stability of these oxides in aqueous conditions, and characterize experimentally four of the remaining materials, synthesized with high phase uniformity, to validate and further develop the computational models. We thus propose nine oxide semiconductors, including CsIn$_3$O$_5$, Sr$_2$In$_2$O$_5$, and KSbO$_2$ which, to the extent of our literature review, have not been previously considered as water-splitting photocatalysts.

cond-mat.mtrl-sci↗

Discovery of the Zintl-phosphide BaCd$_{2}$P$_{2}$ as a long carrier lifetime and stable solar absorber

Thin-film photovoltaics offers a path to significantly decarbonize our energy production. Unfortunately, current materials commercialized or under development as thin-film solar cell absorbers are far from optimal as they show either low power conversion efficiency or issues with earth-abundance and stability. Entirely new and disruptive materials platforms are rarely discovered as the search for new solar absorbers is traditionally slow and serendipitous. Here, we use first principles high-throughput screening to accelerate this process. We identify new solar absorbers among known inorganic compounds using considerations on band gap, carrier transport, optical absorption but also on intrinsic defects which can strongly limit the carrier lifetime and ultimately the solar cell efficiency. Screening about 40,000 materials, we discover the Zintl-phosphide BaCd$_{2}$P$_{2}$ as a potential high-efficiency solar absorber. Follow-up experimental work confirms the predicted promises of BaCd$_{2}$P$_{2}$ highlighting an optimal band gap for visible absorption, bright photoluminescence, and long carrier lifetime of up to 30 ns even for unoptimized powder samples. Importantly, BaCd$_{2}$P$_{2}$ does not contain any critical elements and is highly stable in air and water. Our work opens an avenue for a new family of stable, earth-abundant, high-performance Zintl-based solar absorbers. It also demonstrates how recent advances in first principles computation can accelerate the search of photovoltaic materials by combining high-throughput screening with experiment.

cond-mat.mtrl-sci↗