arXiv subjects

Yiliang Fan

Publications and source records attributed to Yiliang Fan.

4 recordsLinked to original sources

arXiv2025

Switchable axionic magnetoelectric effect via spin-flop transition in topological antiferromagnets

The MnBi$_2$Te$_4$ material family has emerged as a key platform for exploring magnetic topological phases, most notably exemplified by the experimental realization of the axion insulator state. While spin dynamics are known to significantly influence the axion state, a profound understanding of their interplay remains elusive. In this work, we employ an antiferromagnetic spin-chain model to demonstrate that an external magnetic field induces extrinsic perpendicular magnetic anisotropy. We find that an in-plane field stabilizes the antiferromagnetic order, whereas an out-of-plane field destabilizes it and triggers spin-flop transitions. Remarkably, near the surface spin-flop transition in even-layer MnBi$_2$Te$_4$ films, the axion insulator state undergoes a sharp switching behavior accompanied by distinct magnetoelectric responses. Furthermore, we propose that this switchable axionic magnetoelectric effect can be utilized to convert alternating magnetic field signals into measurable square-wave magneto-optical outputs, thereby realizing an axionic analog of a zero-crossing detector. Our findings could open a pathway toward potential applications of axion insulators in next-generation spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Electrically tunable high-Chern-number quasiflat bands in twisted antiferromagnetic topological insulators

Isolated flat bands with significantly quenched kinetic energy of electrons could give rise to exotic strongly correlated states from electron-electron interactions. More intriguingly, the interplay between topology and flat bands can further lead to richer physical phenomena, which have attracted much interest. Here, taking advantage of the recently proposed intertwined Dirac states induced from the anisotropic coupling between the top and bottom surface states of an antiferromagnetic topological insulator thin film, we show the emergence of a high-Chern-number (quasi)flat-band state through moiré engineering of the surface states. Remarkably, the flat bands are isolated from other bands and located near the Fermi level. Furthermore, topological phase transitions between trivial and nontrivial flat-band states can be driven by tuning the out-of-plane electric field. Our work not only proposes a new scheme to realize high-Chern-number flat-band states, but also highlights the versatility of the intertwined Dirac-cone states.

cond-mat.mes-hall↗

arXiv2024

Symmetry-driven anisotropic coupling effect in antiferromagnetic topological insulator: Mechanism for high-Chern-number quantum anomalous Hall state

Antiferromagnetic (AFM) topological insulators (TIs), which host magnetically gapped Dirac-cone surface states and exhibit many exotic physical phenomena, have attracted great attention. Here, we find that the coupled surface states can be intertwined to give birth to a set of $2n$ unique new Dirac cones, dubbed intertwined Dirac cones, through the anisotropic coupling enforced by crystalline $n$-fold ($n=2, 3, 4, 6$) rotation symmetry $C_{nz}$ in the presence of a $PT$-symmetry breaking potential, for example, an electric field. Interestingly, we also find that the warping effect further drives the intertwined Dirac-cone state into a quantum anomalous Hall phase with a high Chern number ($C=n$). Then, based on first-principles calculations, we have explicitly demonstrated six intertwined Dirac cones and a Chern insulating phase with a high Chern number ($C=3$) in MnBi$_2$Te$_4$$/$(Bi$_2$Te$_3$)$_{\mathrm{m}}/$MnBi$_2$Te$_4$ heterostructures, as well as the $C=2$ and $C=4$ phases in HgS and $α$-Ag$_2$Te films, respectively. This work discovers the intertwined Dirac-cone state in AFM TI thin films, which reveals a mechanism for designing the quantum anomalous Hall state with a high Chern number and also paves a way for studying highly tunable high-Chen-number flat bands of twistronics.

cond-mat.mes-hall↗

arXiv2023

Unconventional superconductivity in Sc$_2$Ir$_{4-x}$Si$_x$ by spin-orbit coupling driven flat band

The kagome lattice is very attractive as it can host many novel quantum states, such as the charge density wave, superconductivity, quantum spin liquid, etc. Meanwhile, iridates often exhibit a strong spin-orbit coupling (SOC) effect due to the large atomic mass of 5$d$ elements, which has important implications for both the energy bands and the pairing symmetry of superconductors. For the Laves phase superconductor Sc$_2$Ir$_4$ with a kagome lattice, by doping Si to the Ir sites, we observed a nonmonotonic and two-dome like doping dependence of the superconducting transition temperature $T_{\rm c}$, which is typically found in many unconventional superconducting systems. Interestingly, for some samples, especially Sc$_2$Ir$_{3.5}$Si$_{0.5}$ with the optimal $T_{\rm c}$, after the suppression of superconductivity, the normal-state resistivity exhibits a semiconducting behavior; meanwhile, the specific heat coefficient shows an upturn which follows the relation $C/T\propto{\rm ln}(T_0/T)$ at low temperatures. Around the optimal doping, the resistance measurements exhibit strong superconducting fluctuations. And the superconductivity related specific heat can be fitted by the model of a $d$-wave gap after subtracting the normal-state background. These strongly suggest unconventional superconductivity and correlation effect in the samples, which is mainly induced by a flat band near the Fermi level when considering the SOC, as supported by the first-principles calculations. Our results reveal a new unconventional superconducting system Sc$_2$Ir$_{4-x}$Si$_x$ with strong correlation effects induced by the flat band in the kagome system with strong SOC.

cond-mat.supr-con↗