arXiv subjects

Yimei Zhu

Publications and source records attributed to Yimei Zhu.

At least 37 records · Page 2Linked to original sources

arXiv2024

The effect of surface oxidation and crystal thickness on magnetic properties and magnetic domain structures of Cr2Ge2Te6

Van der Waals (vdW) magnetic materials such as Cr2Ge2Te6 (CGT) show promise for novel memory and logic applications. This is due to their broadly tunable magnetic properties and the presence of topological magnetic features such as skyrmionic bubbles. A systematic study of thickness and oxidation effects on magnetic domain structures is important for designing devices and vdW heterostructures for practical applications. Here, we investigate thickness effects on magnetic properties, magnetic domains, and bubbles in oxidation-controlled CGT crystals. We find that CGT exposed to ambient conditions for 5 days forms an oxide layer approximately 5 nm thick. This oxidation leads to a significant increase in the oxidation state of the Cr ions, indicating a change in local magnetic properties. This is supported by real space magnetic texture imaging through Lorentz transmission electron microscopy. By comparing the thickness dependent saturation field of oxidized and pristine crystals, we find that oxidation leads to a non-magnetic surface layer which is thicker than the oxide layer alone. We also find that the stripe domain width and skyrmionic bubble size are strongly affected by the crystal thickness in pristine crystals. These findings underscore the impact of thickness and surface oxidation on the properties of CGT such as saturation field and domain/skyrmionic bubble size and suggest a pathway for manipulating magnetic properties through a controlled oxidation process.

cond-mat.mtrl-sci↗

arXiv2024

Room-temperature sub-100 nm Néel-type skyrmions in non-stoichiometric van der Waals ferromagnet $\rm Fe_{3-x}GaTe_{2}$ with ultrafast laser writability

Realizing room-temperature magnetic skyrmions in two-dimensional van der Waals ferromagnets offers unparalleled prospects for future spintronic applications. However, due to the intrinsic spin fluctuations that suppress atomic long-range magnetic order and the inherent inversion crystal symmetry that excludes the presence of the Dzyaloshinskii-Moriya interaction, achieving room-temperature skyrmions in 2D magnets remains a formidable challenge. In this study, we target room-temperature 2D magnet $\rm Fe_3GaTe_2$ and unveil that the introduction of iron-deficient into this compound enables spatial inversion symmetry breaking, thus inducing a significant Dzyaloshinskii-Moriya interaction that brings about room-temperature Néel-type skyrmions with unprecedentedly small size. To further enhance the practical applications of this finding, we employ a homemade in-situ optical Lorentz transmission electron microscopy to demonstrate ultrafast writing of skyrmions in $\rm Fe_{3-x}GaTe_2$ using a single femtosecond laser pulse. Our results manifest the $\rm Fe_{3-x}GaTe_2$ as a promising building block for realizing skyrmion-based magneto-optical functionalities.

cond-mat.mtrl-sci↗

arXiv2023

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.

cond-mat.mtrl-sci↗

arXiv2023

Surface termination effect of SrTiO3 substrate on ultrathin SrRuO3

A uniform one-unit-cell-high step on the SrTiO3 substrate is a prerequisite for growing high-quality epitaxial oxide heterostructures. However, it is inevitable that defects induced by mixed substrate surface termination exist at the interface, significantly impacting the properties of ultrathin films. In this study, we microscopically identify the origin for the lateral inhomogeneity in the growth of ultrathin SrRuO3 films due to the step effects of SrTiO3(001). By using atomic-resolved scanning transmission electron microscopy, we observe two distinct types of step propagation along the [011] and [0-11]crystallographic direction in SrTiO3-SrRuO3 heterostructures, respectively. In particular, the type-II [0-11] step results in lateral discontinuity of monolayer SrRuO3 and originates from the SrO-terminated regions along the TiO2-terminated step edge. Such an induced lateral discontinuity should be responsible for the distinct electronic and magnetic properties of monolayer SrRuO3. Our findings underscore the critical importance of using single termination STO substrate to achieve high-quality termination selective films and to unveil the intrinsic properties of epitaxial films in the atomic limit.

cond-mat.mtrl-sci↗

arXiv2023

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) capping layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg capping, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the capping layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems.

cond-mat.mtrl-sci↗

arXiv2023

Verwey transition as evolution from electronic nematicity to trimerons via electron-phonon coupling

Understanding the driving mechanisms behind metal-insulator transitions (MITs) is a critical step towards controlling material's properties. Since the proposal of charge-order-induced MIT in magnetite Fe3O4 in 1939 by Verwey, the nature of the charge order and its role in the transition have remained elusive-a longstanding challenge in the studies of complex oxides. Recently, a trimeron order was discovered in the low-temperature monoclinic structure of Fe3O4; however, the expected transition entropy change in forming trimeron at the Verwey transition is greater than the observed value, which arises a reexamination of the ground state in the high-temperature phase. Here we use electron diffraction to unveil that a nematic charge order on particular Fe sites emerges in the high-temperature cubic structure of bulk Fe3O4, and that upon cooling, a competitive intertwining of charge and lattice orders leads to the emergence of the Verwey transition. Moreover, MeV ultrafast electron diffraction (UED) provides a dynamic measure of the strong coupling between photoexcited electrons and the X3 phonon modes. Our findings discover a new type of electronic nematicity in correlated materials and offer novel insights into the Verwey transition mechanism in Fe3O4 via the electron-phonon coupling.

cond-mat.str-el↗

arXiv2023

Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal

In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. Here, we present control of the correlation strength by tuning the degree of orbital overlap using picometer-scale lattice engineering. We illustrate how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated $SrVO_3$ model system. We show how tensile and compressive biaxial strain oppositely affect the $SrVO_3$ in-plane and out-of-plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. We derive and explain the spectral weight redistribution under strain and illustrate how high tensile strain drives the system towards a Mott insulating state. Implementation of such concepts will drive correlated electron phenomena closer towards new solid state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer towards practical realization.

cond-mat.str-el↗

arXiv2023

Tuning Structural, Transport and Magnetic Properties of Epitaxial SrRuO3 through Ba-Substitution

The perovskite ruthenates (ARuO3, A = Ca, Ba, or Sr) exhibit unique properties owing to a subtle interplay of crystal structure and electronic-spin degrees of freedom. Here, we demonstrate an intriguing continuous tuning of crystal symmetry from orthorhombic to tetragonal (no octahedral rotations) phases in epitaxial SrRuO3 achieved via Ba-substitution (Sr1-xBaxRuO3 with 0 < x < 0.7). An initial Ba-substitution to SrRuO3 not only changes the ferromagnetic properties, but also tunes the perpendicular magnetic anisotropy via flattening the Ru-O-Ru bond angle (to 180°), resulting in the maximum Curie temperature and an extinction of RuO6 rotational distortions at x = 0.20. For x > 0.2, the suppression of RuO6 octahedral rotational distortion dominantly enhances the ferromagnetism in the system, though competing with the impact of the RuO6 tetragonal distortion. Further increasing x > 0.2 gradually enhances the tetragonal-type distortion, resulting in the tuning of Ru-4d orbital occupancy and suppression of ferromagnetism. Our results demonstrate that isovalent substitution of the A-site cations significantly and controllably impacts both electronic and magnetic properties of perovskite oxides.

cond-mat.mtrl-sci↗

arXiv2023

Non-centrosymmetric Sr$_{2}$IrO$_{4}$ obtained under High Pressure

Sr$_{2}$IrO$_{4}$ with strong spin-orbit coupling (SOC) and Hubbard repulsion (U) hosts Mott insulating states. The similar crystal structure, magnetic and electronic properties, particularly the $d$-wave gap observed in Sr$_{2}$IrO$_{4}$ enhanced the analogies to cuprate high-$T_{c}$ superconductor, La$_{2}$CuO$_{4}$. The incomplete analogy was due to the lack of broken inversion symmetry phases observed in Sr$_{2}$IrO$_{4}$. Here, under high pressure and high temperature conditions, we report a non-centrosymmetric Sr$_{2}$IrO$_{4}$. The crystal structure and its noncentrosymmetric character were determined by single crystal X-ray diffraction and high-resolution scanning transmission electron microscopy (HR-STEM). The magnetic characterization confirms the Ir$^{4+}$ with $S$ = 1/2 at low temperature in Sr$_{2}$IrO$_{4}$ with magnetic ordering occurred at around 86 K, where a larger moment is observed than the ambient pressure Sr$_{2}$IrO$_{4}$. Moreover, the resistivity measurement shows three-dimensional Mott variable-range hopping existed in the system. This non-centrosymmetric Sr$_{2}$IrO$_{4}$ phase appears to be a unique material to offer further understanding of high-$T_{c}$ superconductivity.

cond-mat.str-el↗

arXiv2022

Strongly-overdoped La$_{2-x}$Sr$_x$CuO$_4$: Evidence for Josephson-coupled grains of strongly-correlated superconductor

The interpretation of how superconductivity disappears in cuprates at large hole doping has been controversial. To address this issue, we present an experimental study of single-crystal and thin film samples of La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) with $x\ge0.25$. In particular, measurements of bulk susceptibility on LSCO crystals with $x=0.25$ indicate an onset of diamagnetism at $T_{c1}=38.5$ K, with a sharp transition to a phase with full bulk shielding at $T_{c2}=18$ K, independent of field direction. Strikingly, the in-plane resistivity only goes to zero at $T_{c2}$. Inelastic neutron scattering on $x=0.25$ crystals confirms the presence of low-energy incommensurate magnetic excitations with reduced strength compared to lower doping levels. The ratio of the spin gap to $T_{c2}$ is anomalously large. Our results are consistent with a theoretical prediction for strongly overdoped cuprates by Spivak, Oreto, and Kivelson, in which superconductivity initially develops within disconnected self-organized grains characterized by a reduced hole concentration, with bulk superconductivity occurring only after superconductivity is induced by proximity effect in the surrounding medium of higher hole concentration. Beyond the superconducting-to-metal transition, local differential conductance measurements on an LSCO thin film suggest that regions with pairing correlations survive, but are too dilute to support superconducting order. Future experiments will be needed to test the degree to which these results apply to overdoped cuprates in general.

cond-mat.supr-con↗

arXiv2022

Dual-stage structural response to quenching charge order in magnetite

The Verwey transition in magnetite (Fe3O4 ) is the prototypical metal-insulator transition and has eluded a comprehensive explanation for decades. A major element of the challenge is the complex interplay between charge order and lattice distortions. Here we use ultrafast electron diffraction (UED) to disentangle the roles of charge order and lattice distortions by tracking the transient structural evolution after charge order is melted via ultrafast photoexcitation. A dual stage response is observed in which X3, X1, and Delta5 type structural distortions occur on markedly different timescales of 0.7 to 3.2 ps and longer than 3.2 ps. We propose that these distinct timescales arise because X3 type distortions strongly couple to the trimeron charge order, whereas the Delta5-distortions are more strongly associated with monoclinic to cubic distortions of the overall lattice. Our work aids in clarifying the charge lattice interplay using UED method and illustrates the disentanglement of the complex phases in magnetite.

cond-mat.str-el↗

arXiv2022

Ultrafast formation of topological defects in a 2D charge density wave

Topological defects play a key role in nonequilibrium phase transitions, ranging from birth of the early universe to quantum critical behavior of ultracold atoms. In solids, transient defects are known to generate a variety of hidden orders not accessible in equilibrium, but how defects are formed at the nanometer lengthscale and femtosecond timescale remains unknown. Here, we employ an intense laser pulse to create topological defects in a 2D charge density wave, and track their morphology and dynamics with ultrafast electron diffraction. Leveraging its high temporal resolution and sensitivity in detecting weak diffuse signals, we discover a dual-stage growth of 1D domain walls within 1 ps, a process not dictated by the order parameter amplitude but instead mediated by a nonthermal population of longitudinal optical phonons. Our work provides a framework for ultrafast engineering of topological defects based on selective excitation of collective modes, opening new avenues for dynamical control of nonequilibrium phases in correlated materials.

cond-mat.mtrl-sci↗

arXiv2022

A Layered Spin 1/2 polymorph of titanium triiodide

A previously unreported layered spin 1/2 triangular lattice polymorph of TiI3 is described, synthesized under 6 GPa of applied pressure at 900 C, but stable at atmospheric pressure. This air-sensitive material has a CdI2-type layered structure (P-3m1 (#164), a = 4.012 A and c = 6.641 A at 120 K, Z = 1 of Ti0.667I2) with an in-plane triangular lattice, related to that of TiI4 (Ti0.5I2). Although the TiI3 formula is consistent with expectations for a layered honeycomb lattice of spin 1/2 Ti(III), there appears to be disorder in the crystal structure. Magnetic susceptibility and heat capacity measurements suggest that the material undergoes several low temperature phase transitions.

cond-mat.mtrl-sci↗

arXiv2022

Emergence of Layer Stacking Disorder in c-axis Confined MoTe$_2$

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe$_2$ follow the T$_d$, 1T', or an alternative stacking sequence. Here, we resolve this debate using atomic-resolution imaging within the transmission electron microscope. We find that the layer stacking in thin flakes of MoTe$_2$ is highly disordered and pseudo-random, which we attribute to intrinsic confinement effects. Conversely, WTe$_2$, which is isostructural and isoelectronic to MoTe$_2$, displays ordered stacking even for thin exfoliated flakes. Our results are important for understanding the quantum properties of MoTe$_2$ devices, and suggest that thickness may be used to alter the layer stacking in other 2D materials.

cond-mat.mtrl-sci↗

arXiv2022

Anomalous Hall Effect and Perpendicular Magnetic Anisotropy in Ultrathin Ferrimagnetic NiCo$_2$O$_4$ Films

The inverse spinel ferrimagnetic NiCo$_2$O$_4$ possesses high magnetic Curie temperature $T_C$, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo$_2$O$_4$ thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo$_2$O$_4$ films on MgAl$_2$O$_4$ substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while $T_C$ for 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity ($σ_{xy}$) and its scaling relation with the longitudinal conductivity ($σ_{xx}$) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal-insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo$_2$O$_4$.

cond-mat.mtrl-sci↗

arXiv2022

Quantum materials for energy-efficient neuromorphic computing

Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems.

cs.ET↗

arXiv2022

Polaronic Conductivity in Cr$_2$Ge$_2$Te$_6$ Single Crystals

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spin-charge conversion applications. Cr$_2$Ge$_2$Te$_6$ retains long-range magnetic order in bilayer at cryogenic temperatures and shows complex magnetic interactions with considerable magnetic anisotropy. Here, we performed a series of structural, magnetic, X-ray scattering, electronic, thermal transport and first-principles calculation studies which reveal that localized electronic charge carriers in Cr$_2$Ge$_2$Te$_6$ are dressed by surrounding lattice and are involved in polaronic transport via hopping that is sensitive on details of magnetocrystalline anisotropy. This opens possibility for manipulation of charge transport in Cr$_2$Ge$_2$Te$_6$ - based devices by electron-phonon- and spin-orbit coupling-based tailoring of polaron properties.

cond-mat.mtrl-sci↗

arXiv2021

The origin of insulating and non-ferromagnetic SrRuO3 monolayers

The electro-magnetic properties of ultrathin epitaxial ruthenate films have long been the subject of debate. Here we combine experimental with theoretical investigations of (SrTiO3)5-(SrRuO3)n-(SrTiO3)5 (STO5-SROn-STO5) heterostructures with n = 1 and 2 unit cells, including extensive atomic-resolution scanning-transmission-electron-microscopy imaging, electron-energy-loss-spectroscopy chemical mapping, as well as transport and magneto-transport measurements. The experimental data demonstrate that the STO5-SRO2-STO5 heterostructure is stoichiometric, metallic, and ferromagnetic with TC ~ 128 K, even though it lacks the characteristic bulk-SRO octahedral tilts and matches the cubic STO structure. In contrast, the STO5-SRO1-STO5 heterostructure features Ru-Ti intermixing in the RuO2 layer, also without octahedral tilts, but is accompanied by a loss of metallicity and ferromagnetism. Density-functional-theory calculations show that stoichiometric n = 1 and n = 2 heterostructures are metallic and ferromagnetic with no octahedral tilts, while non-stoichiometry in the Ru sublattice in the n = 1 case opens an energy gap and induces antiferromagnetic ordering. Thus, the results indicate that the observed non-stoichiometry is the cause of the observed loss of metallicity and ferromagnetism in the n = 1 case.

cond-mat.str-el↗