arXiv subjects

Yin Wang

Publications and source records attributed to Yin Wang.

At least 73 records · Page 4Linked to original sources

arXiv2018

High intrinsic $ZT$ in InP$_3$ monolayer at room temperature

Two-dimensional thermoelectric materials with a figure of merit $ZT$, which is greater than 2.0 at room temperature, would be highly desirable in energy conversion since the efficiency is competitive to conventional energy conversion techniques. Here, we propose that the indium triphosphide (InP$_3$) monolayer offers an extraordinary $ZT$ of 2.2 at 300 K by using quantum calculations within the ballistic thermal transport region. A remarkably low and isotropic phononic thermal conductivity is founded, which is due to flat lattice vibration modes. This low thermal conductivity takes a major responsibility to the impressively high $ZT$. Moreover, a large $ZT$ that is greater than 1.5 can be maintained, even if a 1% mechanic extension is applied on the lattice. These results suggest that the InP$_3$ monolayer is a promising candidate for low dimensional thermoelectric applications.

cond-mat.mtrl-sci↗

arXiv2018

Two-Dimensional Photogalvanic Spin-Battery

Pure spin-current is of central importance in spintronics. Here we propose a two-dimensional (2D) spin-battery system that delivers pure spin-current without an accompanying charge-current to the outside world at zero bias. The principle of the spin-battery roots in the photogalvanic effect (PGE), and the system has good operational stability against structural perturbation, photon energy and other materials detail. The device principle is numerically implemented in the 2D material phosphorene as an example, and first principles calculations give excellent qualitative agreement with the PGE physics. The 2D spin-battery is interesting as it is both a device that generates pure spin-currents, also an energy source that harvests photons. Given the versatile operational space, the spin-battery should be experimentally feasible.

physics.app-ph↗

arXiv2018

Enhancing the magnetoelectric coupling of Co4Nb2O9[100] by substitution of Mg for Co

We report experimental studies on enhancing the magnetoelectric (ME) coupling of Co$_4$Nb$_2$O$_9$ by substitution of non-magnetic metal Mg for Co. A series of single crystal Co$_{4-x}$Mg$_x$Nb$_2$O$_9$ (x=0, 1, 2, 3) with a single-phase corundum-type structure are synthesized by the optical floating zone method, and the good quality and crystallographic orientations of the synthesized samples are confirmed by Laue spots and sharp XRD peaks. Although the Neel temperature ($T_N$) of the Mg substituted crystals are slightly decreased from 27 K for pure Co$_4$Nb$_2$O$_9$ to 19 K and 11 K for Co$_3$MgNb$_2$O$_9$ and Co$_2$Mg$_2$Nb$_2$O$_9$, respectively, the ME coupling is double enhanced by Mg substitution when x=1. For the magnetic field (electric field) control of electric polarization (magnetization), the ME coefficient $α_{ME}$ of Co$_3$MgNb$_2$O$_9$ is measured to be 12.8 ps/m (13.7 ps/m). These results indicate that the Mg substituted Co$_{4-x}$Mg$_x$Nb$_2$O$_9$ (x=1) could serve as a potential material candidate for applications in future logic spintronics and logic devices.

cond-mat.mtrl-sci↗

arXiv2018

An Ultra-high Numerical Aperture Metalens at Visible Wavelengths

We demonstrate a metalens with NA = 0.98 in air, a bandwidth (FWHM) of 274 nm and a focusing efficiency of 67% at 532 nm wavelength, which is close to the transmission performance of a TiO2 metalens. Moreover, and uniquely so, our metalens can be front-immersed into immersion oil and achieve an ultra-high NA of 1.48 experimentally and 1.73 theoretically, thereby demonstrating the highest NA of any metalens in the visible regime reported to the best of our knowledge.

physics.optics↗

arXiv2018

First principles investigation of pressure related quantum transport in pure black phosphorus devices

We propose a first-principles calculation to investigate the pressure-related transport properties of two kinds of pure monolayer black phosphorus (MBP) devices. Numerical results show that semi-conducting MBP can withstand a considerable compression pressure until it is transformed to be a conductor. The pure MBP devices can work as flexible electronic devices, "negative" pressure sensors, and "positive" pressure sensors depending on the chirality of BP and the magnitude of vertical pressure. When pressure is relatively small, the conductance is robust against the stress for zigzag MBP devices, while shows pressure-sensitive properties for armchair MBP devices. The pressure-stable property of zigzag MBP devices implies a good application prospects as flexible electronic devices, however, the distinct negative increase of conductance versus pressure indicates that armchair MBP devices can work as "negative" pressure sensors. When pressure is relatively large, both armchair MBP devices and zigzag MBP devices show favorable properties of "positive" pressure sensors, whose conductivities rise promptly versus pressure. The longer the device, the more the pressure sensitivity. Band alignment analysis and empirical Wentzel$-$Kramers$-$Brillouin (WKB) approximations are also performed to testify the tunneling process of pure MBP devices from first principles calculation.

cond-mat.mtrl-sci↗

arXiv2017

Composition dependent band offsets of ZnO and its ternary alloys

We report the calculated fundamental band gaps of \emph{wurtzite} ternary alloys Zn$_{1-x}$M$_x$O (M=Mg, Cd) and the band offsets of the ZnO/Zn$_{1-x}$M$_x$O heterojunctions, these II-VI materials are important for electronics and optoelectronics. Our calculation is based on density functional theory within the linear muffin-tin orbital (LMTO) approach where the modified Becke-Johnson (MBJ) semi-local exchange is used to accurately produce the band gaps, and the coherent potential approximation (CPA) is applied to deal with configurational average for the ternary alloys. The combined LMTO-MBJ-CPA approach allows one to simultaneously determine both the conduction band and valence band offsets of the heterojunctions. The calculated band gap data of the ZnO alloys scale as $E_g=3.35+2.33x$ and $E_g=3.36-2.33x+1.77x^2$ for Zn$_{1-x}$Mg$_x$O and Zn$_{1-x}$Cd$_x$O, respectively, where $x$ being the impurity concentration. These scaling as well as the composition dependent band offsets are quantitatively compared to the available experimental data. The capability of predicting the band parameters and band alignments of ZnO and its ternary alloys with the LMTO-CPA-MBJ approach indicate the promising application of this method in the design of emerging electronics and optoelectronics.

cond-mat.mtrl-sci↗

arXiv2016

Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential influence caused by capping layers, we carry out ab initio calculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ, where X represents the capping layer material which can be tungsten, tantalum or hafnium. We report TMR in different MTJs and demonstrate that tungsten is an ideal candidate for a giant TMR ratio. The transmission spectrum in Brillouin zone is presented. It can be seen that in the parallel condition of MTJ, sharp transmission peaks appear in the minority-spin channel. This phenomenon is attributed to the resonant tunnel transmission effect and we explained it by the layer-resolved density of states (DOS). In order to explore transport properties in MTJs, the density of scattering states (DOSS) was studied from the point of band symmetry. It has been found that CoFe|tungsten interface blocks scattering states transmission in the anti-parallel condition. This work reports TMR and transport properties in MTJs with different capping layers, and proves that tungsten is a proper capping layer material, which would benefit the design and optimization of MTJs.

physics.comp-ph↗

arXiv2016

Impurity-limited quantum transport variability in magnetic tunnel junctions

We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel magnetoresistance ratio (TMR) and the average values and variances of the currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our first-principles calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of spintronic devices, which is imperative for high-volume production.

physics.comp-ph↗

arXiv2016

Spin-polarized quantum transport properties through flexible phosphorene

We report a first-principles study on the tunnel magnetoresistance (TMR) and spin-injection efficiency (SIE) through phosphorene with nickel electrodes under the mechanical tension and bending on the phosphorene region. Both the TMR and SIE are largely improved under these mechanical deformations. For the uniaxial tension ($\varepsilon_y$) varying from 0 to 15\% applied along the armchair transport ({\it y}-)direction of the phosphorene, the TMR ratio is enhanced with a maximum of 107\% at the $\varepsilon_y=10\%$, while the SIE increases monotonously from 8\% up to 43\% with the increasing of the strain. Under the out-of-plane bending, the TMR overall increases from 7\% to 50\% within the bending ratio of 0-3.9\%, and meanwhile the SIE is largely improved to around 70\%, as compared to that (30\%) of the flat phosphorene. Such behaviors of the TMR and SIE are mainly affected by the transmission of spin-up electrons in the parallel configuration, which is highly depended on the applied mechanical tension and bending. Our results indicate that the phosphorene based tunnel junctions have promising applications in flexible electronics.

cond-mat.mtrl-sci↗

arXiv2016

Nonequilibrium spin injection in monolayer black phosphorus

Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and spin-polarized quantum transport in MBP from ferromagnetic Ni contacts, in two-dimensional magnetic tunneling structures. We investigate physical properties such as the spin injection efficiency, the tunnel magnetoresistance ratio, spin-polarized currents, charge currents and transmission coefficients as a function of external bias voltage, for two different device contact structures where MBP is contacted by Ni(111) and by Ni(100). While both structures are predicted to give respectable spin-polarized quantum transport, the Ni(100)/MBP/Ni(100) trilayer has the superior properties where the spin injection and magnetoresistance ratio maintains almost a constant value against the bias voltage. The nonequilibrium quantum transport phenomenon is understood by analyzing the transmission spectrum at nonequilibrium.

cond-mat.mtrl-sci↗

arXiv2015

Shape phase transition in the odd Sm nuclei: effective order parameter and odd-even effect

Some binding-energy-related quantities serving as effective order parameters have been used to analyze the shape phase transition in the odd Sm nuclei. It is found that the signals of phase transition in the odd Sm nuclei are greatly enhanced in contrast to the even Sm nuclei. A further analysis shows that the transitional behaviors related to pairing in the Sm nuclei can be well described by the mean field plus pairing interaction model, with a monotonic decrease in the pairing strength $G$.

nucl-th↗

arXiv2015

Automatic Objects Removal for Scene Completion

With the explosive growth of web-based cameras and mobile devices, billions of photographs are uploaded to the internet. We can trivially collect a huge number of photo streams for various goals, such as 3D scene reconstruction and other big data applications. However, this is not an easy task due to the fact the retrieved photos are neither aligned nor calibrated. Furthermore, with the occlusion of unexpected foreground objects like people, vehicles, it is even more challenging to find feature correspondences and reconstruct realistic scenes. In this paper, we propose a structure based image completion algorithm for object removal that produces visually plausible content with consistent structure and scene texture. We use an edge matching technique to infer the potential structure of the unknown region. Driven by the estimated structure, texture synthesis is performed automatically along the estimated curves. We evaluate the proposed method on different types of images: from highly structured indoor environment to the natural scenes. Our experimental results demonstrate satisfactory performance that can be potentially used for subsequent big data processing: 3D scene reconstruction and location recognition.

cs.CV↗

arXiv2014

Compression of Video Tracking and Bandwidth Balancing Routing in Wireless Multimedia Sensor Networks

There has been a tremendous growth in multimedia applications over wireless networks. Wireless Multimedia Sensor Networks(WMSNs) have become the premier choice in many research communities and industry. Many state-of-art applications, such as surveillance, traffic monitoring, and remote heath care are essentially video tracking and transmission in WMSNs. The transmission speed is constrained by big size of video data and fixed bandwidth allocation in constant routing path. In this paper, we present a CamShift based algorithm to compress the tracking of videos. Then we propose a bandwidth balancing strategy in which each sensor node is able to dynamically select the node for next hop with the highest potential bandwidth capacity to resume communication. Key to the strategy is that each node merely maintains two parameters that contains its historical bandwidth varying trend and then predicts its near future bandwidth capacity. Then forwarding node selects the next hop with the highest potential bandwidth capacity. Simulations demonstrate that our approach significantly increases the data received by sink node and decreases the delay on video transmission in Wireless Multimedia Sensor Network environment.

cs.NI↗

arXiv2014

Direct tunneling through high-$κ$ amorphous HfO$_2$: effects of chemical modification

We report first principles modeling of quantum tunneling through amorphous HfO$_2$ dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO$_2$/Al. In particular we predict that chemically modifying the amorphous HfO$_2$ barrier by doping N and Al atoms in the middle region - far from the two interfaces of the MOS structure, can reduce the gate-to-channel tunnel leakage by more than one order of magnitude. Several other types of modification are found to enhance tunneling or induce substantial band bending in the Si, both are not desired from leakage point of view. By analyzing transmission coefficients and projected density of states, the microscopic physics of electron traversing the tunnel barrier with or without impurity atoms in the high-$κ$ dielectric is revealed.

cond-mat.mtrl-sci↗

arXiv2013

Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles

Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We apply the coherent potential approach to handle the configuration average of Al doping and a recently proposed semi-local exchange potential to accurately determine the band gaps of the materials. The calculated band structures of the GaAs, AlAs crystals and band gaps of the GaAs/AlxGa1-xAs alloys, are in very good agreement with the experimental results. We predict that valence band offset of the GaAs/AlxGa1-xAs heterojunction scales with the Al concentration x in a linear fashion as VBO(x)~0.587 x, and the conduction band offset scales with x in a nonlinear fashion. Quantitative comparisons to the corresponding experimental data are made.

cond-mat.mtrl-sci↗

arXiv2013

Electronic structures of III-V zinc-blende semiconductors from atomistic first principles

For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor compounds. Our calculations are from density functional theory with the semi-local exchange proposed recently [F. Tran and P. Blaha, Phys. Rev. Lett. 102, 226401 (2009)], within the linear muffin tin orbital scheme. The calculated band gaps and effective masses are compared to experimental data and good quantitative agreement is obtained. Using the theoretical scheme presented here, quantum transport in nanostructures of III-V compounds can be confidently predicted.

cond-mat.mtrl-sci↗

arXiv2013

Structure and Dielectric Properties of Amorphous High-kappa Oxides: HfO2, ZrO2 and their alloys

High-$κ$ metal oxides are a class of materials playing an increasingly important role in modern device physics and technology. Here we report theoretical investigations of the properties of structural and lattice dielectric constants of bulk amorphous metal oxides by a combined approach of classical molecular dynamics (MD) - for structure evolution, and quantum mechanical first principles density function theory (DFT) - for electronic structure analysis. Using classical MD based on the Born-Mayer-Buckingham potential function within a melt and quench scheme, amorphous structures of high-$κ$ metal oxides Hf$_{1-x}$Zr$_x$O$_2$ with different values of the concentration $x$, are generated. The coordination numbers and the radial distribution functions of the structures are in good agreement with the corresponding experimental data. We then calculate the lattice dielectric constants of the materials from quantum mechanical first principles, and the values averaged over an ensemble of samples agree well with the available experimental data, and are very close to the dielectric constants of their cubic form.

cond-mat.mtrl-sci↗

arXiv2012

Triggercast: Enabling Wireless Collisions Constructive

It is generally considered that concurrent transmissions should be avoided in order to reduce collisions in wireless sensor networks. Constructive interference (CI) envisions concurrent transmissions to positively interfere at the receiver. CI potentially allows orders of magnitude reductions in energy consumptions and improvements on link quality. In this paper, we theoretically introduce a sufficient condition to construct CI with IEEE 802.15.4 radio for the first time. Moreover, we propose Triggercast, a distributed middleware, and show it is feasible to generate CI in TMote Sky sensor nodes. To synchronize transmissions of multiple senders at the chip level, Triggercast effectively compensates propagation and radio processing delays, and has $95^{th}$ percentile synchronization errors of at most 250ns. Triggercast also intelligently decides which co-senders to participate in simultaneous transmissions, and aligns their transmission time to maximize the overall link PRR, under the condition of maximal system robustness. Extensive experiments in real testbeds reveal that Triggercast significantly improves PRR from 5% to 70% with 7 concurrent senders. We also demonstrate that Triggercast provides on average $1.3\times$ PRR performance gains, when integrated with existing data forwarding protocols.

cs.DC↗