arXiv subjects

Ying Fei

Publications and source records attributed to Ying Fei.

16 recordsLinked to original sources

arXiv2025

Multilineage-differentiating stress-enduring cells alleviate neuropathic pain in mice by secreting TGF-b and IL-10

Neuropathic pain is a chronic condition characterized by damage to and dysfunction of the peripheral or central nervous system. There are currently no effective treatment options available for neuropathic pain, and existing drugs often provide only temporary relief with potential side effects. Multilineage-differentiating stress-enduring (Muse) cells are characterized by high expansion potential, a stable phenotype and strong immunosuppression. These properties make them attractive candidates for therapeutics for neuropathic pain management. In this study, we conducted a series of experiments to evaluate the effect of Muse cells on neuropathic pain. Muse cells from different species demonstrated analgesic potential by reversing CCI-induced neuropathic pain. Protein profiling revealed a high degree of similarity between Muse cells and BMSCs. The intrathecal injection of Muse cells effectively reduced neuropathic pain in various mouse models, resulting in better analgesic effects than the administration of equivalent low doses of BMSCs. Immunohistochemical analysis and qPCR revealed the ability of Muse cells to inhibit spinal cord neuroinflammation caused by SNI. In addition, Transwell and ELISA revealed that Muse cells migrated through the injured dorsal root ganglion (DRG) via the CCR7-CCL21 chemotactic axis. In addition, the secretion of TGF-b and IL-10 by Muse cells was identified as the mechanism underlying the analgesic effect of Muse cells. The capacity of Muse cells to mitigate neuroinflammation and produce analgesic effects via the modulation of TGF-b and IL-10 underscores their potential as promising therapeutic approaches for the treatment of neuropathic pain.

q-bio.TO↗

arXiv2023

Determination of Molecular Energies via Quantum Imaginary Time Evolution in a Superconducting Qubit System

As a valid tool for solving ground state problems, imaginary time evolution (ITE) is widely used in physical and chemical simulations. Different ITE-based algorithms in their quantum counterpart have recently been proposed and applied to some real systems. We experimentally realize the variational-based quantum imaginary time evolution (QITE) algorithm to simulate the ground state energy of hydrogen (H2) and lithium hydride (LiH) molecules in a superconducting qubit system. The H2 molecule is directly simulated using the 3-qubit circuit with unitary-coupled clusters (UCC) ansatz. We also combine QITE with the cluster mean-field (CMF) method to obtain an effective Hamiltonian. The LiH molecule is correspondingly simulated using the 3-qubit circuit with hardware-efficient ansatz. For comparison, the LiH molecule is also directly simulated using the 4-qubit circuit with UCC ansatz at the equilibrium point. All the experimental results show a convergence within 4 iterations, with high-fidelity ground state energy obtained. For a more complex system in the future, the CMF may allow further grouping of interactions to obtain an effective Hamiltonian, then the hybrid QITE algorithm can possibly simulate a relatively large-scale system with fewer qubits.

quant-ph↗

arXiv2022

Effect of Stacking Order on the Electronic State of 1T-TaS$_2$

New theoretical proposals and experimental findings on transition metal dichalcogenide 1T-TaS$_2$ have revived interests in its possible Mott insulating state. We perform a comprehensive scanning tunneling microscopy and spectroscopy experiment on different single-step areas in pristine 1T-TaS$_2$. After accurately determining the relative displacement of Star-of-David super-lattices in two layers, we find different stacking orders can correspond to the similar large-gap spectrum on the upper terrace. When the measurement is performed away from the step edge, the large gap spectrum can always be maintained. The stacking order seems rarely disturb the large-gap spectrum in the ideal bulk material. We conclude that the large insulating gap is from the single-layer property, which is a correlation-induced Mott gap based on the single-band Hubbard model. Specific stacking orders can perturb the state and induce a small-gap or metallic spectrum for a limited area around the step edge, which we attribute to a surface and edge phenomenon. Our work provides more evidence about the surface electronic state and deepens our understanding of the Mott insulating state in 1T-TaS$_2$.

cond-mat.str-el↗

arXiv2022

Reconcile the Bulk Metallic and Surface Insulating state in 1T-TaSe$_2$

The transition metal dichalcogenides 1T-TaS$_2$ and 1T-TaSe$_2$ have been extensively studied for the complicated correlated electronic properties. The origin of different surface electronic states remains controversial. We apply scanning tunneling microscopy and spectroscopy to restudy the surface electronic state of bulk 1T-TaSe$_2$. Both insulating and metallic states are identified in different areas of the same sample. The insulating state is similar to that in 1T-TaS$_2$, concerning both the dI/dV spectrum and the orbital texture. With further investigations in single-step areas, the discrepancy of electronic states is found to be associated with different stacking orders. The insulating state is most possibly a single-layer property, modulated to a metallic state in some particular stacking orders. Both the metallic and large-gap insulating spectra, together with their corresponding stacking orders, are dominant in 1T-TaSe$_2$. The connected metallic areas lead to the metallic transport behavior. We then reconcile the bulk metallic and surface insulating state in 1T-TaSe$_2$. The rich phenomena in 1T-TaSe$_2$ deepen our understanding of the correlated electronic state in bulk 1T-TaSe$_2$ and 1T-TaS$_2$.

cond-mat.str-el↗

arXiv2021

Experimental Determination of Multi-Qubit Ground State via a Cluster Mean-Field Algorithm

A quantum eigensolver is designed under a multi-layer cluster mean-field (CMF) algorithm by partitioning a quantum system into spatially-separated clusters. For each cluster, a reduced Hamiltonian is obtained after a partial average over its environment cluster. The products of eigenstates from different clusters construct a compressed Hilbert space, in which an effective Hamiltonian is diagonalized to determine certain eigenstates of the whole Hamiltonian. The CMF method is numerically verified in multi-spin chains and experimentally studied in a fully-connected three-spin network, both yielding an excellent prediction of their ground states.

quant-ph↗

arXiv2021

Quantify the Non-Markovian Process with Intervening Projections in a Superconducting Processor

A Markov assumption considers a physical system memoryless to simplify its dynamics. Whereas memory effect or the non-Markovian phenomenon is more general in nature. In the quantum regime, it is challenging to define or quantify the non-Markovianity because the measurement of a quantum system often interferes with it. We simulate the open quantum dynamics in a superconducting processor, then characterize and quantify the non-Markovian process. With the complete set of intervening projections and the final measurement of the qubit, a restricted process tensor can be determined to account for the qubit-environment interaction. We apply the process tensor to predict the quantum state with memory effect, yielding an average fidelity of $99.86\%\pm 1.1\unicode{x2030}$. We further derive the Choi state of the rest process conditioned on history operations and quantify the non-Markovianity with a clear operational interpretation.

quant-ph↗

arXiv2021

Experimental Determination of Electronic States via Digitized Shortcut-to-Adiabaticity and Sequential Digitized Adiabaticity

A combination of the digitized shortcut-to-adiabaticity (STA) and the sequential digitized adiabaticity is implemented in a superconducting quantum device to determine electronic states in two example systems, the H2 molecule and the topological Bernevig-Hughes-Zhang (BHZ) model. For H2, a short internuclear distance is chosen as a starting point, at which the ground and excited states are obtained via the digitized STA. From this starting point, a sequence of internuclear distances is built. The eigenstates at each distance are sequentially determined from those at the previous distance via the digitized adiabaticity, leading to the potential energy landscapes of H2. The same approach is applied to the BHZ model, and the valence and conduction bands are excellently obtained along the X-Γ-X linecut of the first Brillouin zone. Furthermore, a numerical simulation of this method is performed to successfully extract the ground states of hydrogen chains with the lengths of 3 to 6 atoms.

quant-ph↗

arXiv2021

Optimization of Controlled-Z Gate with Data-Driven Gradient Ascent Pulse Engineering in a Superconducting Qubit System

The experimental optimization of a two-qubit controlled-Z (CZ) gate is realized following two different data-driven gradient ascent pulse engineering (GRAPE) protocols in the aim of optimizing the gate operator and the output quantum state, respectively. For both GRAPE protocols, the key computation of gradients utilizes mixed information of the input Z-control pulse and the experimental measurement. With an imperfect initial pulse in a flattop waveform, our experimental implementation shows that the CZ gate is quickly improved and the gate fidelities subject to the two optimized pulses are around 99%. Our experimental study confirms the applicability of the data-driven GRAPE protocols in the problem of the gate optimization.

quant-ph↗

arXiv2020

A simultaneous feedback and feed-forward control and its application to realize a random walk on the Bloch sphere in a superconducting Xmon-qubit system

Measurement-based feedback control is central in quantum computing and precise quantum control. Here we realize a fast and flexible field-programmable-gate-array-based feedback control in a superconducting Xmon qubit system. The latency of room-temperature electronics is custom optimized to be as short as 140 ns. Projective measurement of a signal qubit produces a feedback tag to actuate a conditional pulse gate to the qubit. In a feed-forward process, the measurement-based feedback tag is brought to a different target qubit for a conditional control. In a two-qubit experiment, the feedback and feed-forward controls are simultaneously actuated in consecutive steps. A quantum number is then generated by the signal qubit, and a random walk of the target qubit is correspondingly triggered and realized on the Bloch sphere. Our experiment provides a conceptually simple and intuitive benchmark for the feedback control in a multi-qubit system. The feedback system can be further scaled up for more complex feedback control experiments.

quant-ph↗

arXiv2020

Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Quasiparticle interference (QPI) of the electronic states has been widely applied in scanning tunneling microscopy (STM) to analyze the electronic band structure of materials. Single-defect induced QPI reveals defect-dependent interaction between a single atomic defect and electronic states, which deserves special attention. Due to the weak signal of single-defect-induced QPI, the signal-to-noise ratio (SNR) is relatively low in a standard two-dimensional QPI measurement. In this paper, we introduce a projective quasiparticle interference (PQPI) method, in which a one-dimensional measurement is taken along high-symmetry directions centered on a specified defect. We apply the PQPI method to a topological nodal-line semimetal ZrSiS. We focus on two special types of atomic defects that scatter the surface and bulk electronic bands. With enhanced SNR in PQPI, the energy dispersions are clearly resolved along high symmetry directions. We discuss the defect-dependent scattering of bulk bands with the non-symmorphic symmetry-enforced selection rules. Furthermore, an energy shift of the surface floating band is observed and a new branch of energy dispersion (q6) is resolved. This PQPI method can be applied to other complex materials to explore defect-dependent interactions in the future.

cond-mat.mtrl-sci↗

arXiv2020

Possible strain induced Mott gap collapse in 1T-TaS$_2$

Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal dichalcogenides 1T-TaS$_2$, with the transition triggered by an optical excitation, a gate controlled intercalation, or a voltage pulse. However, the sudden insulator-metal transition hinders an exploration of how the transition evolves. Here, we report the strain as a possible new tuning parameter to induce Mott gap collapse in 1T-TaS$_2$. In a strain-rich area, we find a mosaic state with distinct electronic density of states within different domains. In a corrugated surface, we further observe and analyze a smooth evolution from a Mott gap state to a metallic state. Our results shed new lights on the understanding of the insulator-metal transition and promote a controllable strain engineering on the design of switching devices in the future.

cond-mat.str-el↗

arXiv2019

The study of intrinsic defect state of FeSe with scanning tunneling microscopy

We apply high resolution scanning tunneling microscopy to study intrinsic defect states of bulk FeSe. Four types of intrinsic defects including the type I dumbbell, type II dumbbell, top-layer Se vacancy and inner-layer Se-site defect are extensively analyzed by scanning tunneling spectroscopy. From characterized depression and enhancement of density of states measured in a large energy range, the type I dumbbell and type II dumbbell are determined to be the Fe vacancy and Se$_\mathrm{Fe}$ defect, respectively. The top-layer Se vacancy and possible inner-layer Se-site vacancy are also determined by spectroscopy analysis. The determination of defects are compared and largely confirmed in the annular dark-field scanning transmission electron microscopy measurement of the exfoliated FeSe. The detailed mapping of defect states in our experiment lays the foundation for a comparison with complex theoretical calculations in the future.

cond-mat.supr-con↗

arXiv2019

Visualizing the charge order and topological defects in an overdoped (Bi,Pb)$_2$Sr$_2$CuO$_{6+x}$ superconductor

Electronic charge order is a symmetry breaking state in high-$T_\mathrm{c}$ cuprate superconductors. In scanning tunneling microscopy, the detected charge-order-induced modulation is an electronic response of the charge order. For an overdoped (Bi,Pb)$_2$Sr$_2$CuO$_{6+x}$ sample, we apply scanning tunneling microscopy to explore local properties of the charge order. The ordering wavevector is non-dispersive with energy, which can be confirmed and determined. By extracting its order-parameter field, we identify dislocations in the stripe structure of the electronic modulation, which correspond to topological defects with an integer winding number of $\pm 1$. Through differential conductance maps over a series of reduced energies, the development of different response of the charge order is observed and a spatial evolution of topological defects is detected. The intensity of charge-order-induced modulation increases with energy and reaches its maximum when approaching the pseudogap energy. In this evolution, the topological defects decrease in density and migrate in space. Furthermore, we observe appearance and disappearance of closely spaced pairs of defects as energy changes. Our experimental results could inspire further studies of the charge order in both high-$T_\mathrm{c}$ cuprate superconductors and other charge density wave materials.

cond-mat.supr-con↗

arXiv2018

Electronic effect of doped oxygen atoms in Bi2201 superconductors determined by scanning tunneling microscopy

The oxygen dopants are essential in tuning electronic properties of Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_n$O$_{2n+4+δ}$ superconductors. Here we apply the technique of scanning tunneling microscopy and spectroscopy to study the influence of oxygen dopants in an optimally doped Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ and an overdoped Bi$_{2-y}$Pb$_y$Sr$_2$CuO$_{6+δ}$. In both samples, we find that interstitial oxygen atoms on the SrO layers dominate over the other two forms of oxygen dopants, oxygen vacancies on the SrO layers and interstitial oxygen atoms on the BiO layers. The hole doping is estimated from the oxygen concentration, as compared to the result extracted from the measured Fermi surface. The precise spatial location is employed to obtain a negative correlation between the oxygen dopants and the inhomogeneous pseudogap.

cond-mat.supr-con↗

arXiv2018

The study of electronic nematicity in an overdoped (Bi, Pb)$_2$Sr$_2$CuO$_{6+δ}$ superconductor using scanning tunneling spectroscopy

The pseudogap (PG) state and its related intra-unit-cell symmetry breaking remain the focus in the research of cuprate superconductors. Although the nematicity has been studied in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, especially underdoped samples, its behavior in other cuprates and different doping regions is still unclear. Here we apply a scanning tunneling microscope to explore an overdoped (Bi, Pb)$_2$Sr$_2$CuO$_{6+δ}$ with a large Fermi surface (FS). The establishment of a nematic order and its real-space distribution is visualized as the energy scale approaches the PG.

cond-mat.supr-con↗

arXiv2018

Visualization of electronic topology in ZrSiSe by scanning tunneling microscopy

As emerging topological nodal-line semimetals, the family of ZrSiX (X = O, S, Se, Te) has attracted broad interests in condensed matter physics due to their future applications in spintonics. Here, we apply a scanning tunneling microscopy (STM) to study the structural symmetry and electronic topology of ZrSiSe. The glide mirror symmetry is verified by quantifying the lattice structure of the ZrSe bilayer based on bias selective topographies. The quasiparticle interference analysis is used to identify the band structure of ZrSiSe. The nodal line is experimentally determined at $\sim$ 250 meV above the Fermi level. An extra surface state Dirac point at $\sim$ 400 meV below the Fermi level is also determined. Our STM measurement provides a direct experimental evidence of the nodal-line state in the family of ZrSiX.

cond-mat.mtrl-sci↗