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Ying-Shuang Fu

Publications and source records attributed to Ying-Shuang Fu.

22 records · Page 2Linked to original sources

Observation of topological states residing at step edges of WTe2

Topological states emerge at the boundary of solids as a consequence of the nontrivial topology of the bulk. Recently, theory predicts a topological edge state on single layer transition metal dichalcogenides with 1T' structure. However, its existence still lacks experimental proof. Here, we report the direct observations of the topological states at the step edge of WTe2 by spectroscopic-imaging scanning tunneling microscopy. A one-dimensional electronic state residing at the step edge of WTe2 is observed, which has a spatial extension of about 2.5 nm. First principles calculations rigorously verify the edge state has a topological origin, and its topological nature is unaffected by the presence of the substrate. Our study supports the existence of topological edge states in 1T'-WTe2, which may envision in-depth study of its topological physics and device applications.

cond-mat.mes-hall↗

Observation of Zeeman effect in topological surface state with distinct material dependence

The helical Dirac fermions on the surface of topological insulators host novel relativistic quantum phenomena in solids. Manipulating spins of topological surface state (TSS) represents an essential step towards exploring the theoretically predicted exotic states related to time reversal symmetry (TRS) breaking via magnetism or magnetic field. Understanding Zeeman effect of TSS and determining its g-factor are pivotal for such manipulations in the latter form of TRS breaking. Here, we report those direct experimental observations in Bi2Se3 and Sb2Te2Se by spectroscopic imaging scanning tunneling microscopy. The Zeeman shifting of zero mode Landau level is identified unambiguously by judiciously excluding the extrinsic influences associated with the non-linearity in the TSS band dispersion and the spatially varying potential. The g-factors of TSS in Bi2Se3 and Sb2Te2Se are determined to be 18 and -6, respectively. This remarkable material dependence opens a new route to control the spins in the TSS.

cond-mat.mes-hall↗

Imaging two-component nature of Dirac-Landau levels in the topological surface state of Bi2Se3

Massless Dirac electrons in condensed matter have attracted considerable attention. Unlike conventional electrons, Dirac electrons are described in the form of two-component wave functions. In the surface state of topological insulators, these two components are associated with the spin degrees of freedom, hence governing the magnetic properties. Therefore, the observation of the two-component wave function provides a useful clue for exploring the novel spin phenomena. Here we show that the two-component nature is manifested in the Landau levels (LLs) whose degeneracy is lifted by a Coulomb potential. Using spectroscopic-imaging scanning tunneling microscopy, we visualize energy and spatial structures of LLs in a topological insulator Bi2Se3. The observed potential-induced LL splitting and internal structures of Landau orbits are distinct from those in a conventional electron system and are well reproduced by a two-component model Dirac Hamiltonian. Our model further predicts non-trivial energy-dependent spin-magnetization textures in a potential variation. This provides a way to manipulate spins in the topological surface state.

cond-mat.mes-hall↗

Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate

Superconductor films on semiconductor substrates draw much attention recently since the derived superconductor-based electronics have been shown promising for future data process and storage technologies. By growing atomically uniform single-crystal epitaxial Pb films of several nanometers thick on Si wafers to form a sharp superconductor-semiconductor heterojunction, we have obtained an unusual giant magnetoresistance effect when the Pb film is superconducting. In addition to the great fundamental interest of this effect, the simple structure and compatibility and scalability with current Si-based semiconductor technology offer a great opportunity for integrating superconducting circuits and detectors in a single chip.

cond-mat.mes-hall↗