arXiv subjects

Yingchun Cheng

Publications and source records attributed to Yingchun Cheng.

18 recordsLinked to original sources

arXiv2026

Generalized Roth--Lempel Codes: NMDS Characterization, Hermitian Self-Orthogonality, and Quantum Constructions

In their seminal 1989 work (IEEE Trans. Inf. Theory 35(3):655-657), Roth and Lempel constructed a well-known family of non-Reed-Solomon maximum distance separable (MDS) codes. For decades, this family of codes has attracted extensive research attention due to its algebraic structure, low-complexity decoding, and broad applications in cryptography and data storage. Most recently, in 2025, the generalized Roth-Lempel (GRL) framework unifies Roth-Lempel codes and its extensions under a flexible algebraic structure. However, explicit criteria for the near-MDS (NMDS) property of GRL codes have not been established, and no systematic construction of Hermitian self-orthogonal GRL codes has been reported, limiting their deployment in classical and quantum error correction. In this work, we make three contributions to address these gaps. First, we give explicit necessary and sufficient conditions for the NMDS property of the two most widely used subclasses of GRL codes. Second, we construct four new families of Hermitian self-orthogonal codes from GRL codes. Two of these families are NMDS, with parameters not covered by existing Hermitian self-orthogonal NMDS codes. Third, based on the proposed Hermitian self-orthogonal GRL codes, we construct four families of quantum GRL codes, including two infinite families of quantum NMDS codes that attain the quantum Singleton bound minus one. Compared to the known quantum error-correcting codes, we obtain many new or improved quantum error-correcting codes. This work bridges the gap between classical GRL code families and quantum error-correction applications.

cs.IT↗

arXiv2025

Spontaneous Enhancement of Dzyaloshinskii-Moriya Interaction via Field-Cooling-Induced Interface Engineering in 2D van der Waals Ferromagnetic ternary Tellurides

The emergence of two-dimensional (2D) van der Waals (vdW) ferromagnets has opened new avenues for exploring topological spin textures and their applications in next-generation spintronics. Among these materials, Fe3GaTe2 (FGaT) emerges as a model system due to its room-temperature skyrmion phases, which are stabilized by strong Dzyaloshinskii-Moriya interaction (DMI). However, the atomistic origins of DMI in centrosymmetric vdW lattices remain elusive. Here, we report a spontaneous DMI enhancement mechanism driven by FC in FGaT and its analog Fe3GeTe2 (FGeT). Combining Raman spectroscopy and scanning transmission electron microscopy (STEM), we have observed the irreversible precipitation of FeTe2 in annealed FGaT. The resulting FeTe2/FGaT heterostructure is considered to break the symmetry and significantly enhance the DMI. Furthermore, similar phenomenon has been observed in the family ferromagnetic material FGeT as well. Additionally, the precipitation of FeTe2 varies significantly with different thicknesses of FGaT, aligning closely with the reported behavior of skyrmions. This discovery provides new insights into the mechanisms behind the origin of the DMI in ternary tellurides, paving the way for advanced spintronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2

We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Bias Voltage Driven Tunneling Magnetoresistance Polarity Reversal in 2D Stripy Antiferromagnet CrOCl

Atomically thin materials with coupled magnetic and electric polarization are critical for developing energy-efficient and high-density spintronic devices, yet they remain scarce due to often conflicting requirements of stabilizing both magnetic and electric orders. The recent discovery of the magnetoelectric effect in the 2D stripy antiferromagnet CrOCl highlights this semiconductor as a promising platform to explore electric field effects on magnetoresistance. In this study, we systematically investigate the magnetoresistance in tunneling junctions of bilayer and monolayer CrOCl. We observe that the transition from antiferromagnetic to ferrimagnetic phases in both cases induces a positive magnetoresistance at low bias voltages, which reverses to a negative value at higher bias voltages. This polarity reversal is attributed to the additional electric dipoles present in the antiferromagnetic state, as supported by our theoretical calculations. These findings suggest a pathway for the electric control of spintronic devices and underscore the potential of 2D magnets like CrOCl in advancing energy-efficient spintronic applications.

cond-mat.mes-hall↗

arXiv2023

Anomalous exchange bias effect in ferromagnetic VI3 flakes

The exchange bias (EB) effect, pivotal in magnetic data storage and sensing devices, has been observed not only in interfacial regions but also in intrinsic ferromagnetic materials. Here, we've uncovered a robust and stable exchange bias effect within the layered van der Waals (vdW) ferromagnet VI3 employing magnetic circular dichroism microscopy. At 10 K, we observed a significant exchange field of approximately 0.1 T, accompanied by random shifts (positive or negative relative to zero magnetic field) after zero-field cooling. Notably, this effect is effectively controllable after field cooling, with shift direction opposing the applied magnetic field. The presence of strong magnetic anisotropic energy within VI3 results in larger coercivity-bound magnetic domains. These domains dictate the neighboring ferromagnetic alignment and induce shifts in the hysteresis loop. Our study not only contributes to comprehending fundamental nanoscale magnetic interactions but also sheds light on emergent phenomena within layered van der Waals magnets.

cond-mat.mtrl-sci↗

arXiv2023

Approaching the robust linearity in dual-floating van der Waals photodiode

Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type MoS2 2D semiconductors. The presence of type II heterojunctions on both sides of channel layers effectively deplete carriers and restrict the photocarrier trapping within the channel layers. As a result, the device exhibits robust linear photoresponse under photovoltaic mode from the visible (405 nm) to near-infrared (1600 nm) band. With the built-in electric field of the vdWHs, we achieve a linear dynamic range of ~ 100 dB, responsivity of ~ 1.57 A/W, detectivity of ~ 4.28 * 10^11 Jones, and response speed of ~ 30 {\mu}s. Our results showcase a promising device concept with excellent linearity towards fast and low-loss detection, high-resolution imaging, and logic optoelectronics.

cond-mat.mes-hall↗

arXiv2023

Self-powered programmable van der Waals photodetectors with nonvolatile semi-floating gate

Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hBN/graphene semi-floating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction, and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (~3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ~0.5 A/W and detectivity ~1.6*10^12 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semi-floating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.

cond-mat.mes-hall↗

arXiv2022

Strain tunability of perpendicular magnetic anisotropy in van der Waals ferromagnets VI3

Layered ferromagnets with high coercivity have special applications in nanoscale memory elements in electronic circuits, such as data storage. Therefore, searching for new hard ferromagnets and effectively tuning or enhancing the coercivity are the hottest topics in layered magnets today. Here, we report a strain tunability of perpendicular magnetic anisotropy in van der Waals (vdW) ferromagnets VI3 using magnetic circular dichroism measurements. For an unstrained flake, the M-H curve shows a rectangular-shaped hysteresis loop with perpendicular magnetic anisotropy and a large coercivity (up to 1.775 T at 10 K). Furthermore, the coercivity can be enhanced to a maximum of 2.6 T at 10 K under a 2.9% in-plane tensile strain. Our DFT calculations show that the magnetic anisotropy energy (MAE) can be dramatically increased after applying an in-plain tensile strain, which contributes to the enhancement of coercivity in the VI3 flake. Meanwhile, the strain tunability on the coercivity of CrI3, with a similar crystal structure, is limited. The main reason is the strong spin-orbital coupling in V3+ in VI6 octahedra in comparison with that in Cr3+. The strain tunability of coercivity in VI3 flakes highlights its potential for integration into vdW heterostructures, paving the way toward nanoscale spintronic devices and applications in the future.

cond-mat.mtrl-sci↗

arXiv2022

Tunable linearity of high-performance vertical dual-gate vdW phototransistor

Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here we present dual-channel conduction with ambipolar multilayer WSe2 by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of ~2.5*10^4 A/W. Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ~2*10^13 Jones in the linear photoresponse regime. The linear photoresponse and high performance of our dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Observation of intrinsic crystal phase in bare CrI3 ferromagnetism

Intrinsic structural phase is a crucial foundation for the fundamental physical properties, and for creating innovative devices with unprecedented performances and unique functionalities. Long-range ferromagnetic orders of van der Waals CrI3 are strongly tied with interlayer stacking orders. However, the intrinsic structure of few-layer CrI3 still remains elusive; the predicted monoclinic phase has not yet been experimentally detected in bare few-layer CrI3. Here we uncover the intrinsic structure of few-layer CrI3 with interlayer antiferromagnetic coupling, which unambiguously show monoclinic stacking in both bare and hBN-encapsulated bilayer and tri-five-layer CrI3 throughout an entire temperature range from 300 to 10 K. An exotic spring damping effect from hBN encapsulation layers is experimentally observed in hBN/CrI3/hBN heterostructures, which partly hinders interlayer sliding of CrI3. This work demonstrates the intrinsic monoclinic crystal phase of few-layer CrI3 and associated correlation with magnetic orders, opening up numerous opportunities for creating magnetic texture by stacking design.

cond-mat.mtrl-sci↗

arXiv2021

Efficiency at maximum power of thermoelectric heat engines with the symmetric semiconductor superlattice

Efficiency at maximum power (EMP) is a very important specification for a heat engine to evaluate the capacity of outputting adequate power with high efficiency. It has been proved theoretically that the limit EMP of thermoelectric heat engine can be achieved with the hypothetical boxcar-shaped electron transmission, which is realized here by the resonant tunneling in the one-dimensional symmetric InP/InSe superlattice. It is found with the transfer matrix method that a symmetric mode is robust that regardless of the periodicity, and the obtained boxcar-like electron transmission stems from the strong coupling between symmetric mode and Fabry-Pérot modes inside the allowed band. High uniformity of the boxcar-like transmission and the sharp drop of the transmission edge are both beneficial to the maximum power and the EMP, which are optimized by the bias voltage and the thicknesses of barrier and well. The maximum power and EMP are extracted with the help of machine learning technique, and more than 95% of their theoretical limits can both be achieved for smaller temperature difference, smaller barrier width and larger well width. We hope the obtain results could provide some basic guidance for the future designs of high EMP thermoelectric heat engines.

cond-mat.mes-hall↗

arXiv2020

Observation of nonreciprocal magneto-optical scattering in nonencapsulated few-layered CrI3

Magneto-optical effect refers to a rotation of polarization plane, which has been widely studied in traditional ferromagnetic metal and insulator films and scarcely in two-dimensional layered materials. Here we uncover a new nonreciprocal magneto-inelastic light scattering effect in ferromagnetic few-layer CrI3. We observed a rotation of the polarization plane of inelastic light scattering between -20o and +60o that are tunable by an out-of-plane magnetic field from -2.5 to 2.5 T. It is experimentally observed that the degree of polarization can be magnetically manipulated between -20% and 85%. This work raises a new magneto-optical phenomenon and could create opportunities of applying 2D ferromagnetic materials in Raman lasing, topological photonics, and magneto-optical modulator for information transport and storage.

cond-mat.mtrl-sci↗

arXiv2020

Spin-Valley Locking Effect in Defect States of Monolayer MoS$_2$

Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS2

The Zeeman effect offers unique opportunities for magnetic manipulation of the spin degree of freedom (DOF). Recently, valley Zeeman splitting, referring to the lifting of valley degeneracy, has been demonstrated in two-dimensional transition metal dichalcogenides (TMDs) at liquid helium temperature. However, to realize the practical applications of valley pseudospins, the valley DOF must be controllable by a magnetic field at room temperature, which remains a significant challenge. Magnetic doping in TMDs can enhance the Zeeman splitting, however, to achieve this experimentally is not easy. Here, we report unambiguous magnetic manipulation of valley Zeeman splitting at 300 K (g = -6.4) and 10 K (g = -11) in a CVD-grown Fe-doped MoS2 monolayer; the effective g factor can be tuned to -20.7 by increasing the Fe dopant concentration, which represents an approximately fivefold enhancement as compared to undoped MoS2. Our measurements and calculations reveal that the enhanced splitting and geff factors are due to the Heisenberg exchange interaction of the localized magnetic moments (Fe 3d electrons) with MoS2 through the d-orbital hybridization.

cond-mat.mtrl-sci↗

arXiv2019

Layer Dependence of Stacking Order in Nonencapsulated Few-layer CrI3

Long-range magnetic orders in atomically thin ferromagnetic CrI3 give rise to new fascinating physics and application perspectives. The physical properties of two-dimensional (2D) ferromagnetism CrI3 are significantly influenced by interlayer spacing and stacking order, which are sensitive to the hydrostatic pressure and external environments. However, there remains debate on the stacking order at low temperature. Here, we study the interlayer coupling and stacking order of non-encapsulated 2-5 layer and bulk CrI3 at 10 K by Raman spectroscopy; demonstrate a rhombohedral stacking in both antiferromagnetic and ferromagnetic CrI3. The opposite helicity dependence of Ag and Eg modes arising from phonon symmetry further validate the rhombohedral stacking. An anomalous temperature-dependent behavior is observed due to spin-phonon coupling below 60 K. Our work provides insights into the interlayer coupling and stacking orders of 2D ferromagnetic materials.

cond-mat.mtrl-sci↗

arXiv2016

Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field

Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition metal dichalcogenide (TMDC) with broken inversion symmetry possesses two degenerate yet inequivalent valleys, offering unique opportunities for valley control through helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demonstrated recently, which may enable valley control by a magnetic field. However, the realized valley splitting is modest, (~ 0.2 meV/T). Here we show greatly enhanced valley spitting in monolayer WSe2, utilizing the interfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate. A valley splitting of 2.5 meV is demonstrated at 1 T by magneto-reflectance measurements. Moreover, the splitting follows the magnetization of EuS, a hallmark of the MEF. Utilizing MEF of a magnetic insulator can induce magnetic order, and valley and spin polarization in TMDCs, which may enable valleytronic and quantum computing applications.

cond-mat.mes-hall↗

arXiv2016

Borophene as an extremely high capacity electrode material for Li-ion and Na-ion batteries

Two-dimensional (2D) materials as electrodes is believed to be the trend for future Li-ion and Na-ion batteries technologies. Here, by using first-principles methods, we predict that the recently reported borophene (2D born sheet) can serve as an ideal electrode material with high electrochemical performance for both Li-ion and Na-ion batteries. The calculations are performed on the two experimentally stable borophene structures, namely \b{eta}12 and \c{hi}3 structures. The optimized Li and Na adsorption sites are identified, and the host materials are found to maintain good electric conductivity before and after adsorption. Besides advantages including small diffusion barriers and low average open-circuit voltages, most remarkably, the storage capacity can be as high as 1984 mA h g-1 in \b{eta}12 borophene and 1240 mA h g-1 in \c{hi}3 borophene for both Li and Na, which is several times higher than the commercial graphite electrode and is the highest among all the 2D materials discovered to date. Our results highly support that borophenes can be appealing anode materials for both Li-ion and Na-ion batteries with extremely high power density.

cond-mat.mes-hall↗

arXiv2015

Strain effects on electronic and optic properties of monolayer C$_2$N holey two-dimensional crystals

A new two-dimensional material, the C$_2$N holey 2D (C$_2$N-$h$2D) crystal, has recently been synthesized. Here we investigate the strain effects on the properties of this new material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains $\geq 12\%$. It remains a direct gap semiconductor under strain and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8\% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient $\sim10^6$ cm$^{-1}$ covering a wide spectrum. Our findings suggest the great potential of strain-engineered C$_2$N-$h$2D in electronic and optoelectronic device applications.

cond-mat.mtrl-sci↗